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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

A single femto-second optical pulse can fully reverse the magnetization of a film within picoseconds. Such fast operation hugely increases the range of application of magnetic devices. However, so far, this type of ultrafast switching has been restricted to ferri-magnetic GdFeCo films. In contrast, all optical switching of ferro-magnetic films require multiple pulses, thereby being slower and less energy efficient. In this study, we demonstrate magnetization switching induced by a single laser pulse in various ferromagnetic Co/Pt multilayers grown on GdFeCo, by exploiting the exchange coupling between the two magnetic films. Table-top depth-sensitive time-resolved magneto-optical experiments show that the Co/Pt magnetization switches within 7 ps. Lastly, this coupling approach will allow ultrafast control of a variety of magnetic films, which is critical for applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhancing the x-ray output of a single-wire explosion with a gas-puff based plasma opening switch

Here, we present experiments performed on the 1 MA COBRA generator using a low density, annular, gas-puff z-pinch implosion as an opening switch to rapidly transfer a current pulse into a single metal wire on axis. This gas-puff on axial wire configuration was studied for its promise as an opening switch and as a means of enhancing the x-ray output of the wire. We demonstrate that current can be switched from the gas-puff plasma into the wire, and that the timing of the switch can be controlled by the gas-puff plenum backing pressure. X-ray detector measurements indicate that for low plenum pressure Kr or Xe shots with a copper wire, this configuration can offer a significant enhancement in the peak intensity and temporal distribution of radiation in the 1–10 keV range.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Nonvolatile voltage controlled molecular spin state switching

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. Here, the result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Distributed deep learning training using silicon photonic switched architectures

The scaling trends of deep learning models and distributed training workloads are challenging network capacities in today’s datacenters and high-performance computing (HPC) systems. We propose a system architecture that leverages silicon photonic (SiP) switch-enabled server regrouping using bandwidth steering to tackle the challenges and accelerate distributed deep learning training. In addition, our proposed system architecture utilizes a highly integrated operating system-based SiP switch control scheme to reduce implementation complexity. To demonstrate the feasibility of our proposal, we built an experimental testbed with a SiP switch-enabled reconfigurable fat tree topology and evaluated the network performance of distributed ring all-reduce and parameter server workloads. The experimental results show up to 3.6× improvements over the static non-reconfigurable fat tree. Our large-scale simulation results show that server regrouping can deliver up to 2.3× flow throughput improvement for a 2× tapered fat tree and a further 11% improvement when higher-layer bandwidth steering is employed. The collective results show the potential of integrating SiP switches into datacenters and HPC systems to accelerate distributed deep learning training.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Resistive Switching in SrFeO2.5/Nb:SrTiO3 Heterostructures with Growth-Controlled Film Orientation

Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated from epitaxial brownmillerite SrFeO2.5 films with two distinct film orientations, wherein facile oxygen ion diffusion planes are aligned parallel (in-plane) and perpendicular (out-of-plane) with the electrodes. SrFeO2.5 films were grown on (001) oriented Nb:SrTiO3 to enable high-quality interfaces and future integration with Si CMOS technologies. Post-growth vacuum annealing and growth pressure were used to control film orientations, as confirmed by transmission electron microscopy and x-ray diffraction measurements. Films grown with diffusion planes oriented in-plane had oxygen-rich, perovskite-like nanodomains spread throughout the film, and fabricated devices exhibited worse switching consistency and more stochasticity. In contrast, films grown with diffusion planes oriented out-of-plane had a more uniform oxygen-rich perovskite interfacial layer above the bottom electrode, and devices built from this film orientation showed significant statistical improvements in switching voltages and cycling consistency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

An attempt to simulate laser-induced all-optical spin switching in a crystalline ferrimagnet

Interest in all-optical spin switching (AOS) is growing rapidly. The recent discovery of AOS in Mn 2 RuGa provides a much needed clean case of crystalline ferrimagnets for theoretical simulations. Here, we attempt to simulate it using the state-of-the-art first-principles method combined with the Heisenberg exchange model. We first compute the spin moments at two inequivalent manganese sites and then feed them into our model Hamiltonian. We employ an ultrafast laser pulse to switch the spins. We find that there is a similar optimal laser field amplitude to switch spins. However, we find that the exchange interaction has a significant effect on the system switchability. Weakening the exchange interaction could make the system unswitchable. This provides a crucial insight into the switching mechanism in ferrimagnets.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Reversible plasmonic switching in a graphene nanoresonator loaded with a core – shell quantum dot

A model of an all-plasmonic switch based on a graphene waveguide integrated with a stub nanoresonator loaded with a quantum dot is considered. Using the full-wave numerical simulation, it is shown that successive on/off switching of the control surface plasmon – polariton wave at the input of the waveguide leads to a change in the phase of the signal plasmon – polariton wave in the nanoresonator by π. This causes reversible switching of the device operation regime – from almost complete blocking to stable transmission of the signal plasmon – polariton wave through the waveguide. The effect is implemented at rates of ∼0.5 THz for infrared electromagnetic waves localised in a device with a switching region of 40 × 20 nm. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlling the charge of dust particles in a plasma afterglow by timed switching of an electrode voltage

Abstract A method is demonstrated for controlling the charge of a dust particle in a plasma afterglow, allowing a wider range of outcomes than an earlier method. As in the earlier method, the dust particles are located near an electrode that has a DC voltage during the afterglow. Here, that DC voltage is switched to a positive value at a specified delay time, instead of maintaining a constant negative voltage as in the earlier method. Adjusting the timing of this switching allows one to control the residual charge gradually over a wide range that includes both negative and positive values of charge. For comparison, only positive residual charges were attained in the earlier method. We were able to adjust the residual charge from about −2000 e to +10 000 e , for our experimental parameters (8.35 µ m particles, 8 mTorr argon pressure, and a DC voltage that was switched from −150 V to +125 V within the first two milliseconds of the afterglow). The plasma conditions near the dust particles changed from ion-rich to electron-rich, when the electrode was switched from cathodic to anodic. Making this change at a specified time, as the electrons and ions decay in the afterglow, provides this control capability. These results also give insight into the time development of a dust particle’s charge in the afterglow, on a sub-millisecond time scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

All-optical spin switching under different spin configurations

All-optical spin switching represents a new frontier in femtomagnetism. However, its underlying principles are quite different from traditional thermal activated spin switching. In this work, we employ a atomic spin model and present a systematic investigation from a single spin to a large system of over a million spins. We find that for a single spin in absence of external laser excitation, the conservation of total angular momentum requires that the spin change exactly matches the orbital momentum change, but a laser pulse significantly alters this relation, where the spin change does not necessarily follow the orbital change. This is reflected in the strong dependence of switching on laser polarization. To have an efficient spin switching, the electron initial momentum direction must closely follow the spin’s orientation, so the orbital angular momentum is transverse to the spin and consequently the spin-orbit torque lies in the same direction as the spin. These findings are manifested in a much larger system. We find that the spin response depends on underlying spin structures. Linearly polarized laser pulses creates a dip in a uniform inplane magnetized thin film, but has little effects on Neel and Bloch walls. Both right- and left- circularly polarized light (σ+ and σ-) have stronger but different effects in both uniform spin domains and Neel walls. While σ+ light creates a basin of spins pointing down, σ- light creates a mound of spins pointing up. At the vicinity of the structure spins are reversed, similar to the experimental observation. σ+ light has a dramatic effect, disrupting spins in Bloch walls. By contrast, σ+ light has a small effect on Bloch walls because of its helicity. These findings are expected to have important implications in the future.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Nanoscale Quantum Imaging of Field-Free Deterministic Switching of a Chiral Antiferromagnet

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation have opened new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free deterministic magnetization switching for implementing scalable and energy favorable magnetic recording and storage, which have been demonstrated in conventional ferromagnetic and antiferromagnetic material systems. Here, in this work, we extend this advanced magnetization control strategy to chiral antiferromagnet Mn 3 ⁢Sn using spin currents with out-of-plane canted polarization generated from low-symmetry van der Waals (vdW) material WTe 2 . Numerical calculations suggest that dampinglike SOT of spins injected perpendicular to the kagome plane of Mn 3⁢ Sn serves as a driving force to rotate the chiral magnetic order, while the fieldlike SOT of spin currents with polarization parallel to the kagome plane provides the bipolar deterministicity to the magnetic switching in the absence of an external magnetic field. We further introduce scanning quantum microscopy to visualize nanoscale evolutions of Mn 3 ⁢Sn magnetic domains during the field-free switching process, corroborating the exceptionally large magnetic switching ratio up to 90%. Our results highlight the opportunities provided by hybrid SOT material platforms consisting of noncollinear antiferromagnets and low-symmetry vdW spin source materials for developing next-generation spintronic logic devices.

2-dimesional systems↗
DOE OSTI2020

Quantum Versus Classical Switching Dynamics of Driven Dissipative Kerr Resonators

Here, we report a first-principles study of the driven dissipative dynamics for Kerr oscillators in the mesoscopic regime. This regime is characterized by large Kerr nonlinearity, realized here using the nonlinear kinetic inductance of a large array of Josephson junctions. The experimentally measured nonlinear resonance lineshapes of the junction array modes show significant deviations from steady-state numerical predictions, and necessitate time-dependent numerical simulations indicative of strong measurement-induced dephasing in the system arising from the large cross-Kerr effect between array modes. Analytical and numerical calculations of switching rate corroborate this by showing the emergence of a slow time scale, which is much longer than the linear decay rate and is set by fluctuation-induced switching times in the bistable regime. Furthermore, our analysis shows that the usual quantum-activated escape treatment is inadequate for prediction of the switching rates at large frequency shifts caused by strong nonlinearities, necessitating a quantum treatment that utilizes the full system Liouvillian. Based on our analysis, we identify a universal crossover parameter that delineates the regimes of validity of semiclassical and quantum descriptions, respectively. Our work shows how dynamical switching effects in strongly nonlinear systems provide a platform to study quantum-to-classical transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Switching dynamics of the spin density wave in superconducting CeCoIn 5

The ordering wave vector Q of a spin density wave (SDW), stabilized within the superconducting state of CeCoIn 5 in a high magnetic field, has been shown to be hypersensitive to the direction of the field. Q can be switched from a nodal direction of the d-wave superconducting order parameter to a perpendicular node by rotating the in-plane magnetic field through the antinodal direction within a fraction of a degree. In this paper, we address the dynamics of the switching of Q. We use a free-energy functional based on the magnetization density, which describes the condensation of magnetic fluctuations of nodal quasiparticles, and show that the switching process includes closing of the SDW gap at one Q and then reopening the SDW gap at another Q perpendicular to the first one. The magnetic field couples to Q through the spin-orbit interaction. Our calculations show that the width of the hysteretic region of switching depends linearly on the deviation of magnetic field from the critical field associated with the SDW transition, consistent with our thermal conductivity measurements. Finally, the agreement between theory and experiment supports our scenario of the hypersensitivity of the Q phase on the direction of magnetic field, as well as the magnon condensation as the origin of the SDW phase in CeCoIn 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressure and film thickness with nontrivial topology or switchable and nonswitchable regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Electronic switching by metastable polarization states in BiFe O 3 thin films

Here, we present an approach to control resistive switching in metal-ferroelectric contacts using a radially symmetric electric field. In ferroelectrics with significant polarization along the corresponding field lines, the field above a critical threshold will induce polarization discontinuity, a corresponding nanoscale volume of space charge, and a conducting junction. We demonstrate this principle using nanoscale polarization switching of a conventional (001)-oriented thin film of BiFeO 3 . Without any optimization, the conducting state created in this regime of resistive switching exhibits local currents of ~1–10nA, approaching the ~100nA threshold required for device implementation [J. Jiang et al., Nat. Mater. 17, 49 (2018)]. The corresponding electronic function is that of a volatile resistive switch, which is directly compatible with neuristor functionality that encodes the functioning basis of an axon [M. D. Pickett et al., Nat. Mater. 12, 114 (2013)]. Phase-field modeling further reveals that in the strongly charged local configuration, BiFeO 3 locally undergoes a rhombohedral-tetragonal (R-T) phase transition, in part due to substantial piezoelectric expansion of the lattice. The estimated local charge density can be as high as ~10 21 cm -3 , which would be extremely difficult to achieve by conventional doping approaches without altering other material properties. Therefore, this method for creating stable and reproducible strongly charged ferroelectric junctions enables more systematic studies of their physical properties, such as the possibility of structural and electronic phase transitions, and it can lead to new ferroelectric devices for advanced information functions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Understanding middle-point inductance's effect on switching transients for multi-chip SiC package design with P-cell/N-cell concept

Middle-point inductance L_middle can be introduced in power module designs with P-cell/N-cell concept. In this paper, the effect of middle-point inductance on switching transients is analyzed first using frequency domain analysis. Then a dedicated multiple-chips power module is fabricated with the capability of varying L_middle, and extensive switching tests are conducted to evaluate the device’s switching performance at different L_middle. Experiment results show that as L_middle changes, different voltage stresses are imposed on the active switch and anti-parallel diode. For lower MOSFET’s turn-off, as L_middle goes up, the maximum voltage of lower MOSFET increases; however, the maximum voltage of anti-parallel diode decreases significantly. In addition to voltage spikes, it is observed that the active MOSFET’s turn-on loss will decrease at higher values of L_middle while its turn-off loss will increase. Detailed analysis of this loss variation is presented. The analysis and experiment results will provide design guidelines for multiple-chips power module package design with P-cell/N-cell concept.

Yang, Fei↗
DOE OSTI2021

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.

Silicon Carbide, Monolithic, Bidirectional, FourQu↗