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Results for “Single Event Effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories

Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.

nonvolatile memory↗
NASA NTRS2015

Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor - System-on-a-Chip

Hardness assurance test results of Intel state-of-the-art 14nm Broadwell U-series processor System-on-a-Chip (SoC) for total dose are presented, along with first-look exploratory results from trials at a medical proton facility. Test method builds upon previous efforts by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).

14nm↗
NASA NTRS2015

Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor/System-on-a-Chip

Hardness assurance test results of Intel state-of-the-art 14nm “Broadwell” U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).

microprocessor↗
NASA NTRS2015

Proton Particle Test Fluence: What's the Right Number?

While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.

Proton SEE↗
NASA NTRS2016

Team Update on North American Proton Facilities for Radiation Testing

In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.

Single event effects testing↗
NASA NTRS2016

Team Update on North American Proton Facilities for Radiation Testing

In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.

Proton cyclotrons↗
NASA NTRS2016

Team Update on North American Proton Facilities for Radiation Testing

In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.

Single event effects testing↗
NASA NTRS2016

Silicon Schottky Diode Safe Operating Area

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

single event effects (SEE)↗
NASA NTRS2016

Field Programmable Gate Aray (FPGA) Radiation Data: All Data is Not Equal

Electronic parts (integrated circuits) have grown in complexity such that determining all failure modes and risks based on single particle event radiation testing is impossible. In this presentation, the authors will present why this is so and provide some realism on what this means to FPGAs. Its all about understanding actual risks and not making assumptions.

radiation testing↗
NASA NTRS2016

Team Update on North American Proton Facilities for Radiation Testing

In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.

Cancer therapy↗
NASA NTRS2017

Proton Testing: Opportunities, Pitfalls and Puzzles

Although proton SEE testing can place constraints on some heavy-ion SEE susceptibilities, it is important to quantify residual risk that protons may not reveal all SEE susceptibilities in a system. We examine the relative strengths and limitations of proton and heavy-ion SEE testing and how these may be affected by technology scaling and high-Z materials in the device.

Protons↗
NASA NTRS2017

DDR Memories

This presentation will include information about Double Data Rate (DDR) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.

Double Data Rate (DDR)↗