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At least 451 records · Page 25

Phonon spectra of two-dimensional liquid dusty plasmas on a one-dimensional periodic substrate

We investigate the phonon spectra of two-dimensional liquid dusty plasmas on a one-dimensional periodic substrate using numerical simulations. The propagation of the waves across the potential wells of the substrate is inhibited due to the confinement of the dust particles by the substrate minima. If the substrate wells are narrow or deep, one-dimensional chains of particles are formed in each minimum, and the longitudinal motion of an individual chain dominates the propagation of waves along the potential wells of the substrate. Increasing the width or decreasing the depth of the substrate minima allows the particles to buckle into a zigzag structure, and the resulting spectra develop two branches, one for sloshing motion and one for breathing motion. Lastly, the repulsion between neighboring dust particles produces backward propagation of the sloshing wave for small wave numbers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Structures and diffusion of two-dimensional dusty plasmas on one-dimensional periodic substrates

Using numerical simulations, we examine the structure and diffusion of a two-dimensional dusty plasma (2DDP) in the presence of a one-dimensional periodic substrate (1DPS) as a function of increasing substrate strength. Both the pair correlation function perpendicular to the substrate modulation and the mean-squared displacement (MSD) of dust particles are calculated. It is found that both the structure and dynamics of 2DDP exhibit strong anisotropic effects, due to the applied 1DPS. As the substrate strength increases from zero, the structure order of dusty plasma along each potential well of 1DPS increases first probably due to the competition between the interparticle interactions and the particle-substrate interactions, and then decreases gradually, which may be due to the reduced dimensionality and the enhanced fluctuations. The obtained MSD along potential wells of 1DPS clearly shows three processes of diffusion in our studied 2DDP. Finally, between the initial ballistic and finally diffusive motion, there is the intermediate subdiffusion discovered here, which may result from the substrate-induced distortion of the caging dynamics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Spectroscopic Measurements and Models of Energy Deposition in the Substrate of Quantum Circuits by Natural Ionizing Radiation

Naturally occurring background radiation is a potential source of correlated decoherence events in superconducting qubits that will challenge error-correction schemes. In order to characterize the radiation environment in an unshielded laboratory representative of superconducting qubits’ environments, we performed broadband, spectroscopic measurements of background radiation events inside a millikelvin refrigerator. The spectrometer was designed to mimic the size and composition of a quantum circuit. Specifically, we measured the background radiation spectra in silicon substrates of two thicknesses, 500 and 1500 µm, and one area, 25 mm 2 . The observed spectra span energies from a few kilo-electron-volts up to nearly 10 MeV, are nearly featureless, and decrease in intensity by a factor of 40 000 between 100 keV and 3 MeV for the 500-µm substrate. We integrate the spectra to obtain the average event rates and deposited power levels. These quantities correspond to a rate of 0.023 events per second and a power of 4.9 keV s -1 , when counting events that deposit at least 40 keV for the 500-µm-thick substrate. We find that the cryogenic measurements are in good agreement with predictions based on simple measurements of the terrestrial gamma-ray flux outside the refrigerator, published models of cosmic-ray fluxes, a crude model of the cryostat, and radiation-transport simulations. This model requires no free parameters to predict the background radiation spectra in the silicon substrates. The agreement between measurements and predictions demonstrates that the model we present can be used to assess the relative contributions of terrestrial and cosmic-ray sources to background radiation interactions in silicon substrates of varying thickness. These spectroscopic measurements are performed with a novel combination of superconducting microresonators located on micromachined silicon islands that define the interaction volume with background radiation. The resonators transduce deposited energy to a readily detectable electrical signal. Microresonator readout closely resembles dispersive superconducting qubit readout, so similar devices—with or without micromachined islands—are suitable for integration with superconducting quantum circuits as detectors for background radiation events. For our specific laboratory conditions, we find that gamma-ray emissions from radioisotopes are responsible for the majority of events that deposit E < 1 ⁢Me⁢V. We present results demonstrating that the background radiation spectrum contains relevant contributions from cosmic-ray particles other than muons, particularly a tail of multi-mega-electron-volt events due to protons and neutrons. These observations suggest several paths to reducing the impact of background radiation on quantum circuits, supported by an empirically validated model for generating reliable predictions of radiation interactions with silicon substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A substrate selected by phage display exhibits enhanced side-chain hydrogen bonding to HIV-1 protease

Crystal structures of inactive variants of HIV-1 protease bound to peptides have revealed how the enzyme recognizes its endogenous substrates. The best of the known substrates is, however, a nonnatural substrate that was identified by directed evolution. The crystal structure of the complex between this substrate and the D25N variant of the protease is reported at a resolution of 1.1 Å. The structure has several unprecedented features, especially the formation of additional hydrogen bonds between the enzyme and the substrate. This work expands the understanding of molecular recognition by HIV-1 protease and informs the design of new substrates and inhibitors.

Windsor, Ian W.↗

Multiphysics Analysis of Li Cooled Divertor Substrate During Loss of Coolant Accident (LOCA)

In the ongoing study of potential designs for liquid metal (LM) plasma-facing components (PFCs), so-called “slow” and “fast” Li flow divertor concepts are under investigation. In the previous studies on design and analysis of the slow Li flow divertor and comparison with the fast Li flow divertor, the magnetohydrodynamics (MHD)/heat transfer effects of the Li flowing inside the substrate as a second coolant were comprehensively investigated under the normal steady-state operation conditions. Here, in the present study, the multiphysics analysis is extended to the unsteady abnormal divertor scenario where the Li layer on top of the substrate does not provide full coverage or even totally disappears for a certain period of time, so that the substrate becomes directly exposed to the incident high plasma heat flux. Such an unwanted event may happen regardless of the concept of the divertor and is worth detailed investigations, typically referred to as a loss of coolant accident (LOCA). To address this situation, a simplified scoping analysis is conducted first in 2-D, and then an integrated 3-D modeling is performed using a time-dependent multiphysics model in COMSOL Multiphysics that integrates LM MHD, heat transfer, and solid mechanics. The main goal is to evaluate conditions under which the major material limits, such as the maximum allowable temperature, stress, and displacement of the substrate, can still be met. It was shown that the maximum time over which the substrate of RAFM steel can retain structural integrity during the LOCA is around 0.2 ∼ 0.3 s. Any divertor concept that utilizes RAFM steel as a substrate material and liquid Li as a second coolant should take such a permitted time into consideration.

divertor↗

Solution Chemistry, Substrate, and Processing Effects on Chemical Homogeneity in Lead Zirconate Titanate Thin Films

The effects of chemistry, substrate, and processing conditions on through‐thickness cation distributions are explored in solution‐derived morphotropic composition lead zirconate titanate (PZT) films. Films prepared from chelate‐based and conventional sol–gel chemistries were spin cast onto Pt/ZnO/SiO 2 /Si and Pt/Ti/SiO 2 /Si substrates and pyrolyzed at 300°C, 350°C, and 400°C prior to crystallization at 700°C either in a preheated furnace or via rapid thermal processing. For films crystallized within a conventional furnace on Pt/ZnO/SiO 2 /Si substrates no chemical gradients were observed. All films prepared on Pt/Ti/SiO 2 /Si substrates had increased titanium concentrations near the PZT/Pt interfaces, and the source is shown to be titanium diffusing from the substrate metallization stack. The effect of heating method and rate was explored in films prepared on Pt/ZnO/SiO 2 /Si substrates with 15°C, 50°C, and 100°C/s heating rates within a rapid thermal annealer. Only one solution chemistry‐heating rate combination resulted in the formation of a chemical gradient: a conventional sol–gel chemistry and a 50°C/s heating rate. Infrared spectroscopy of pyrolyzed gel films showed absorption spectra differences in the bonding structure between the two chemistries with the conventional sol–gel‐derived films exhibiting a signature more similar to that of a PbTiO 3 gel, suggestive of a gel‐structure source of gradient formation during crystallization.

Ihlefeld, Jon F.↗

In situ examination of osteoblast biomineralization on sulfonated polystyrene-modified substrates using Fourier transform infrared microspectroscopy

Osteoporosis is a skeletal disorder that is characterized by the loss of bone mineral density (BMD) resulting in increased risk of fracture. However, it has been shown that BMD is not the only indicator of fracture risk, as the strength of bone depends on a number of factors, including bone mass, architecture and material properties. We present that physiological mineral deposition requires the formation of a properly developed extracellular matrix (ECM), which recruits calcium and phosphate ions into the synthesis of apatite crystals. Temporal and spatial compositional and structural changes of biological apatite greatly depend on the properties of the crystals initially formed. As such, Fourier-transform infrared microspectroscopy (FTIRM) is capable of examining adaptive remodeling by providing compositional information such as the level of mineralization and carbonate substitution, as well as quality and perfection of the mineral phase. The objective of this study was to evaluate the in vitro mineralization development of MC3T3-E1 murine calvarial preosteoblasts cultured on different substrata by comparing FTIRM measurements from two subclones (mineralizing subclone 4 and nonmineralizing subclone 24) maintained in culture for up to 21 days. The results showed that modulation of the substrate surface using a thin coating of sulfonated polystyrene (SPS) provided favorable conditions for the development of a mineralizable ECM and that the mineral formed by the osteoblasts was similar to that of fully mineralized bone tissue. Specifically, the mineralizing subclone produced significantly more mineral phosphate when cultured on SPS-coated substrates for 21 days, compared to the same culture on bare substrates. In contrast, the level of mineralization in nonmineralizing subclone was low on both SPS-coated and uncoated substrates. The mineralizing subclone also produced comparable amounts of collagen on both substrates; however, mineralization was significantly higher in the SPS culture. The nonmineralizing subclone produced comparable amounts of collagen on day 1 but much less on day 21. Collagen maturity ratio increased in the mineralizing subclone from day 1 to day 21, but remained unchanged in the nonmineralizing subclone. In conclusion, these results suggest that SPS-treatment of the substrate surface may alter collagen remodeling; however, other factors may also influence osteoblast mineralization in the long term.

59 BASIC BIOLOGICAL SCIENCES↗

First-Principles Calculations on the Wettability of Li Atoms on the (111) Surfaces of W and Mo Substrates

Comprehension over the interactions between lithium (Li) atoms and tungsten (W) or molybdenum (Mo) are crucial to improve the wettability of the flowing liquid Li, a candidate plasma facing material in fusion devices, on the surfaces of supported substrate metals. In this work, we utilize first-principles density- functional theory calculations to figure out the adsorption and diffusion properties of Li atoms and clusters on the (111) surfaces of W and Mo. It is found that single Li atom in the fcc-hollow site is the most favored configuration. For the multiple Li atoms adsorption on the substrates, the planar construction is more stable than the stacking one. The electronic structure analysis shows that the lateral interaction between Li atoms is very weak and the binding between Li atom and the substrates is strong; therefore, it can be inferred that the liquid Li is “wetting” intrinsically on the surfaces of the W and Mo substrates. We also investigate the effect of defects (vacancy, H, C, and O) and find that the preexisted vacancy in the substrates has little effect on the wettability; however, the impurities (especially O atom) will hinder the movement of Li atoms on the metal substrates.

36 MATERIALS SCIENCE↗

Charge State of Metallic Nanoparticles on a Conducting Substrate

The charge state of a disordered system of metallic nanoparticles on a conducting substrate is analyzed. The theoretical model that describes thermostimulated tunnel transitions of electrons between the particles and also the electron transitions between the particles and the substrate due to the difference in the work functions has been built. The model takes into account the interaction of the charges of the nearest particles and also the interaction of the particle charges with the image charges in the substrate. The Monte Carlo computer simulation for this model makes it possible to obtain the distribution pattern of the charge in structures with different nanoparticle density in a one-layer coating on the substrate at various values of the dielectric permittivity of the environment and various values of the difference of the work functions of particles and the substrate. The numerical results for structures with Ni and Pt nanoparticles on a carbon substrate, which are often used as catalysts of chemical processes, are presented as an example.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Factors Controlling Electrochemistry-Induced Deposition of a Zeolitic Imidazolate Framework-8 Film on Underlying Substrates

This paper discusses factors controlling electrochemistry-induced deposition of a zeolitic imidazolate framework-8 (ZIF-8) film on a planar substrate that is placed under an electrode. This method, which was recently demonstrated by us [T. Ito, et al. Cryst. Growth Des., 23, 6369 (2023)], provides a simple means to form a ZIF-8 film having lateral dimensions replicating those of a working electrode on an underlying substrate. We reported the effects of applied cathodic potential, electrode–substrate distance, and deposition time on the film formation, and proposed a mechanism involving cathodic base generation at a working electrode that promoted ligand deprotonation to form intermediate species, followed by their diffusion toward an underlying substrate. Here, we discuss details on the deposition mechanism by investigating the influences of other factors on the film deposition. We have investigated the effects of precursor concentration on film formation, and clarified that O 2 is a probase, rather than H 2 O. We have also shown the influences of substrate surface properties controlled by self-assembled monolayers on film thickness and morphology. Most notably, we successfully demonstrated the formation of microscale ZIF-8 films using an ultramicroelectrode, revealing the applicability of the electrochemistry-induced method for micropatterned film deposition on an underlying substrate.

36 MATERIALS SCIENCE↗

Effects of Substrate Addition on Soil Respiratory Carbon Release Under Long-Term Warming and Clipping in a Tallgrass Prairie

Regulatory mechanisms of soil respiratory carbon (C) release induced by substrates (i.e., plant derived substrates) are critical for predicting ecosystem responses to climate change, but the mechanisms are not well understood. In this study, we sampled soils from a long-term field manipulative experiment and conducted a laboratory incubation to explore the role of substrate supply in regulating the differences in soil C release among the experimental treatments, including control, warming, clipping, and warming plus clipping. Three types of substrates (glucose, C 3 and C 4 plant materials) were added with an amount equal to 1% of soil dry weight under the four treatments. We found that the addition of all three substrates significantly stimulated soil respiratory C release in all four warming and clipping treatments. In soils without substrate addition, warming significantly stimulated soil C release but clipping decreased it. However, additions of glucose and C 3 plant materials (C 3 addition) offset the warming effects, whereas C 4 addition still showed the warming-induced stimulation of soil C release. Our results suggest that long-term warming may inhibit microbial capacity for decomposition of C 3 litter but may enhance it for decomposition of C 4 litter. Such warming-induced adaptation of microbial communities may weaken the positive C-cycle feedback to warming due to increased proportion of C 4 species in plant community and decreased litter quality. In contrast, clipping may weaken microbial capacity for warming-induced decomposition of C 4 litter but may enhance it for C 3 litter. Warming- and clipping-induced shifts in microbial metabolic capacity may be strongly associated with changes in plant species composition and could substantially influence soil C dynamics in response to global change.

54 ENVIRONMENTAL SCIENCES↗

High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect, density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the program’s milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the market’s requirement.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

100 mm Engineered InP-on-Si Laminate Substrates for InP-based Multijunction Solar Cells

The project focused on fabrication of InP/Si laminate substrates as templates for growth of InGaAsP/InGaAs and InAlAs/InGaAsP/InGaAs multijunction solar cells. InP/Si template substrates were developed and used as templates for InGaAs solar growth. A novel feature of the program was development of the virtual substrate template, which enables a substrate to be formed with a lattice constant intermediate between those of GaAs and InP. Large-area virtual substrate templates were formed by transfer and bonding of dislocation free InGaAs films wafer onto silicon substrates.

14 SOLAR ENERGY↗

Manufacturing Process for OLED Integrated Substrate

The main objective of this project was to develop a low-cost integrated substrate for rigid OLED solid-state lighting produced at a manufacturing scale. The integrated substrates could include combinations of soda lime glass substrate, light extraction layer, and an anode layer (i.e., Transparent Conductive Oxide, TCO). Over the 3 + year course of the project, the scope of work was revised to focus on the development of a glass substrates with an internal light extraction (IEL) layer. A manufacturing-scale float glass on-line particle embedding process capable of producing an IEL glass substrate having a thickness of less than 1.7mm and an area larger than 500mm x 400mm was demonstrated. Substrates measuring 470mm x 370mm were used in the OLED manufacturing process for fabricating OLED lighting panels in single pixel devices as large as 120.5mm x 120.5mm. The measured light extraction efficiency (calculated as external quantum efficiency, EQE) for on-line produced IEL samples (>50%) met the project’s initial goal.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗

Broad substrate-specific phosphorylation events are associated with the initial stage of plant cell wall recognition in Neurospora crassa

Fungal plant cell wall degradation processes are governed by complex regulatory mechanisms, allowing the organisms to adapt their metabolic program with high specificity to the substrate at hand. While the uptake of representative plant cell wall mono- and disaccharides is known to induce specific transcriptional and translational responses, the processes related to early signal reception and transduction are still enigmatic. A fast and reversible way of transmitting extracellular signals throughout the cell are protein phosphorylations, which could initiate adaptations of the fungal metabolism on a post-translational level. In an effort to elucidate how changes in the initial substrate recognition phase of Neurospora crassa affect the global phosphorylation pattern, phosphoproteomics was performed after a short (2 minute) induction period with several plant cell wall-related mono- and disaccharides. The MS/MS-based peptide analysis revealed a large number of proteins that are phosphorylated or de-phosphorylated in a substrate-specific manner. A protein-protein-interaction network was constructed based on the proteins identified by MS/MS. Using this network, putative interaction partners of several phosphorylated proteins of interest were determined. This led to the discovery of substrate-specific protein-interactions that might be involved in mediating the substrate recognition of N. crassa. Besides a high number of kinases, phosphatases and transcription factors to be affected by differential phosphorylation, our data demonstrate, for example, that the cAMP signaling pathway is heavily modified by substrate-specific phosphorylations, including the key component adenylate cyclase CR-1 as well as several G-protein-coupled receptors. In addition, four differentially phosphorylated F-Box proteins were identified in the phospho-proteome. When physiologically characterized using the respective gene deletion strains, Fbx-19 and Fbx-22 were found to be involved in carbon catabolite repression responses. Overall, these results improve our understanding of how fungi respond to environmental cues and provide novel insights into the mechanisms of sensory perception and signal transduction during lignocellulose degradation.

59 BASIC BIOLOGICAL SCIENCES↗

Substrate effect on nanoporous structure of silica wires by channel-confined self-assembly of block-copolymer and sol-gel precursors

Nanoporous silica wires of various wire diameters were developed by space-confined molecular self-assembly of triblock copolymer ethylene/propylene/ethylene (P123) and silica alkoxide precursor (tetraethylorthosilicate, TEOS). Two distinctive hard-templating substrates, anodized aluminum oxide (AAO) and track-etched polycarbonate (EPC), with channel diameters in the range between 10 nm and 200 nm were employed for space-confinement of soft molecular self-assembly driven by the block-copolymer microphase separation. It was observed in the scanning and transmission electron microscope (STEM) studies that the substrate geometry and material characteristics had pronounced effects on the structure and morphology of the silica nanowires. A substrate wall effect was proposed to explain the ordering and orientation of the intra-wire mesostructure. Circular and spiral nanostructures were found only in wires formed in AAO substrate, not in EPC. Pore-size differences and distinctive wall morphologies of the nanowires relating to the substrates were discussed. It was shown that the material and channel wall characteristics of different substrates play key roles in the ordering and morphology of the intra-wire nanostructures.

mesoporous wires↗

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗