Correlation of magnetic fields and energetic electrons on the IMP 1 satellite.
Correlation of magnetic fields and energetic electrons on IMP I satellite, noting depression in geomagnetic tail region, electron fluxes and diamagnetic effect
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Correlation of magnetic fields and energetic electrons on IMP I satellite, noting depression in geomagnetic tail region, electron fluxes and diamagnetic effect
On a two-dimensional crystal, a “superlattice” with nanometer-scale periodicity can be imposed to tune the Bloch electron spectrum, enabling novel physical properties inaccessible in the original crystal. While creating 2D superlattices by means of nanopatterned electric gates has been studied for band structure engineering in recent years, evidence of electron correlations-which drive many problems at the forefront of physics research-remains to be uncovered. Here, in this work, we demonstrate signatures of a correlated insulator phase in Bernal-stacked bilayer graphene modulated by a gate-defined superlattice potential, manifested as resistance peaks centered at integer multiples of single electron per superlattice unit cell carrier densities. The observation is consistent with the formation of a stack of flat low-energy bands due to the superlattice potential combined with inversion symmetry breaking. Our work paves the way to custom-designed superlattices for studying band structure engineering and strongly correlated electrons in 2D materials.
Single-point spacecraft measurements within coronal mass ejections (CMEs) often exhibit a negative correlation between electron density and temperature. At least two opposing interpretations have been suggested for this relationship. If, on one hand, these single spacecraft observations provide direct measures of the polytropic properties of the plasma, then they imply that the polytropic index for the electrons gamma(sub e) is often < 1. Moreover, since the electrons carry the bulk of the pressure (via their significantly higher temperature), this further implies that the dynamics of CME evolution are dominated by an effective polytropic index gamma(sub e)ff < 1. On the other hand, gamma < 1 implies that as the ejecta propagate away from the Sun and expand, they also heat up; a result clearly at odds with in situ observations. In contrast to these CME intervals, many studies have shown that the quiescent solar wind exhibits a positive correlation between electron density and temperature, suggesting that gamma(sub e) > 1. In this study we simulate the evolution of a variety of CME-like disturbances in the solar wind using a one-dimensional, single-fluid model, to address the interpretation of the relationship between electron density and temperature within CMEs at fixed locations in space. Although we strictly impose a polytropic relationship (with gamma = constant) throughout our simulations, we demonstrate that a variety of correlations can exist between density and temperature at fixed points. Furthermore, we demonstrate that the presence of only local uncorrelated random fluctuations in density and temperature can produce a negative correlation. Consequently, we conclude that these single-point observations of negative correlations between electron density and temperature cannot be used to infer the value of gamma(sub e). Instead, we suggest that entropy variations, together with the plasma's tendency to achieve pressure balance with its surroundings, are responsible for the observed profiles.
Electronic coherences are key to understanding and controlling photoinduced molecular transformations. Here, we identify a crucial quantum-mechanical feature of electron-nuclear correlation, the projected nuclear quantum momenta, essential to capture the correct coherence behavior. For simulations, we show that, unlike traditional trajectory-based schemes, exact-factorization-based methods approximate these correlation terms and correctly capture electronic coherences in a range of situations, including their spatial dependence, an important aspect that influences subsequent electron dynamics and that is becoming accessible in more experiments.
We summarize and give perspective upon recent progress in developing non-empirical constraint-based thermal (i.e., free energy) exchange-correlation (XC) density functionals essential for accurate description of the quantum behavior of electrons in warm, dense plasmas. After delineating the critical role of ground-state functionals for zero-temperature, time-dependent DFT, we outline the underpinnings of local density approximation, generalized gradient approximation (GGA), and meta-GGA XC free-energy functionals. Two basic thermalization principles for upgrading ground-state XC functionals to successful thermal ones are emphasized. Then, we turn to a long-standing challenge, assessment of the accuracy of well-founded functionals. Unlike the ground state, there are a few exact results for large T and P. An exception is path integral Monte Carlo (PIMC) data for dense H/D and He plasmas. For those, we did ab initio molecular dynamics simulations under selected thermodynamic conditions employing five thermal XC functionals: two approximate thermal GGAs, fully thermal GGA, an approximate meta-GGA, and fully thermal meta-GGA. Comparisons with the PIMC data show that functionals thermalized by augmenting a non-thermal functional with a lower-level thermal contribution are inferior to functionals with thermal XC and spatial inhomogeneity effects taken into account at the same level of refinement. We believe this and similar evidence should be convincing to the high-energy density physics community of the necessity of use of proper thermal XC functionals in simulation studies of finite-temperature quantum effects in warm, dense plasmas.
High pressure equations of state including electron gas correlation energy, giving density vs pressure curves for various elements
Correlation of outer radiation belt electron intensity with solar activity cycle
Here, we investigated the thermal expansion of amorphous polystyrene (PS) and poly(methyl methacrylate) (PMMA) homopolymers using the temperature dependence of spatial electron-density correlations. The strong and broad X-ray interference maxima arising from inter- and intramolecular correlation distances were distinct, maintaining their shape during the heating of the samples to 250 °C. Three maxima characteristic of electron density correlations between the backbones, substituents along the chain, and repeat-units were observed. A remarkable temperature dependence was identified in the largest correlation distances arising from the intermolecular interactions. Based on the temperature dependence of the correlation distances, the coefficients of molecular expansion were very close to the coefficients of thermal expansion. This study provides a simple yet accurate way to correlate macroscopic volume expansions with the molecular expansion obtained from wide-angle X-ray scattering (WAXS) data.
The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (lifetime damage constant ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found.
Dissociative electron attachment excess energy correlation with fragment ion translational energies, determining radical affinity
Engineering the properties of semiconductors by changing their crystalline phase is a technologically and economically relevant alternative to doping using foreign elements, with strong potential for photonic and electronic applications. Although major advances have been reported recently for crystal‐phase engineering of III‐V and group IV semiconductor nanowires, interfacing two mismatched crystalline phases in a nanostructure induces several deformation mechanisms, which remain largely unexplored. Here, using state‐of‐the‐art synchrotron X‐ray nanobeam diffraction and transmission electron microscopy, subtle twisting and bending is unveiled within an individual GaAs nanowire containing cubic and hexagonal segments. Their role is discussed in accommodating the inter‐reticular spacing fluctuations, and their variations are correlated to the nanoscale phase distribution and to the effect of the NW support. This study brings direct evidence of a complex combination of deformation mechanisms in biphasic nanowires, which opens a new path to tune the nanowire properties with appealing perspectives for device engineering in nanophotonics and nanomechanics.
Strongly coupled electron-hole bilayers can host quantum states of interlayer excitons, such as high-temperature exciton condensates at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer is accompanied by an equal but opposite current in the other. We used an optical technique to probe the electrical transport of correlated electron-hole bilayers based on MoSe2/hBN/WSe2 heterostructures. We observed perfect Coulomb drag in the excitonic insulator phase at low temperatures; the counterflow resistance of interlayer excitons remained finite. These results indicate the formation of an exciton gas that does not condense into a superfluid. Our work demonstrates that dynamic optical spectroscopy provides a powerful tool for probing exciton transport behavior in correlated electron-hole fluids.
Accurate determination of the electronic properties of correlated oxides remains a significant challenge for computational theory. Traditional Hubbard-corrected density functional theory (DFT+U) frequently encounters limitations in precisely capturing electron correlation, particularly in predicting band gaps. We introduce a systematic methodology to enhance the accuracy of diffusion Monte Carlo (DMC) simulations for both ground and excited states, focusing on LiCoO 2 as a case study. By employing a selected configuration interaction (sCI) approach, we demonstrate the capability to optimize wavefunctions beyond the constraints of single-reference DFT+U trial wavefunctions. Here, we show that the sCI framework enables accurate prediction of band gaps in LiCoO 2 , closely aligning with experimental values and substantially improving traditional computational methods. The study uncovers a nuanced mixed state of t 2g and e g orbitals at the band edges that is not captured by conventional single-reference methods, further elucidating the limitations of PBE+U in describing d-d excitations. Our findings advocate for the adoption of beyond-DFT methodologies, such as sCI, to capture the essential physics of excited-state wavefunctions in strongly correlated materials. The improved accuracy in band gap predictions and the ability to generate more reliable trial wavefunctions for DMC calculations underscore the potential of this approach for broader applications in the study of correlated oxides. This work not only provides a pathway for more accurate simulations of electronic structures in complex materials but also suggests a framework for future investigations of the excited states of other challenging systems.
Correlation coupling matrix elements for one electron transfer and ion-ion recombinations in Landau-Zener calculations
High resolution electron microscopy for correlative studies of biological ultrastructure
Temporal characteristics of geomagnetic micropulsations and related energetic auroral zone electron precipitation as function of local time
Response of pi electrons in large organic molecule to scalar field for coronene, showing oscillator strength enhancement near single particle excitation band
LEED pattern and germanium surface conductivity during oxidation indicating electron states annihilation