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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Photo-accelerated oxidation of spiro-OMeTAD for efficient carbon-based perovskite solar cells

Metal halide perovskite thin film solar cell (PSC) technology demonstrates promising power conversion efficiency and paves the way to commercialization. So far, the best device performance originates from the n-i-p structure with FTO/SnO 2 /perovskite/Spiro-OMeTAD/Au device architecture. Traditionally, to achieve high efficiency, several hours of oxidization of a Li-doped Spiro-OMeTAD hole transport layer (HTL) is necessary, which hinders the application of Spiro-OMeTAD for rapid large-scale manufacturing. In particular, the oxidization process significantly relies on ambient conditions, including oxygen and moisture levels. In this work, we report a fast technique to accomplish rapid oxidation in several mins of Spiro-OMeTAD HTL in perovskite solar cells by illuminating in visible light with one Sunlight intensity (100 mW cm −2 ). Compared to the traditional approach, our photo-accelerated oxidization of Spiro-OMeTAD approach can deliver a high-power conversion efficiency. We employ this photo-accelerated oxidization for the planar carbon-based perovskite solar cell and achieve a champion device efficiency of 17.47%. This strategy overcomes the barriers for a simple and rapid means toward mass manufacturing and industrial applications by utilizing Spiro-OMeTAD as the HTL for the perovskite solar module.

14 SOLAR ENERGY↗
DOE OSTI2022

Modulation of the coordination environment enhances the electrocatalytic efficiency of Mo single atoms toward water splitting

Here, enhancing the catalytic efficiency through engineering active site environments is expected to work pronouncedly for single atom catalysts (SACs) because of intense atomic scale interactions involved between SAs and their coordination environments. Taking Mo SACs for catalyzation of the hydrogen evolution reaction (HER) as an example, three SACs of different coordination environments, namely Mo-O 2 N 2 , Mo-O 2 N 1 C 1 , and Mo-O 2 C 2 , were successfully created for demonstration. The HER performances are in an increasing order of Mo-O 2 N 2 , Mo-O 2 N 1 C 1 , and Mo-O 2 C 2 , exhibiting η 10 of 98, 71, and 61 mV, η 500 of 340, 248, and 200 mV, Tafel slopes of 95.8, 39.6, and 33.8 mV dec -1 , and current density decays of 9, 6, and 6% after a 50 hour operation at an initial current density of 100 mA cm -2 , respectively. Substituting C with N in the coordination environment results in inferior HER catalytic efficiency and stability. Density functional theory calculations reveal that replacing carbon with nitrogen for coordination with the Mo SA on a carbon substrate of a higher N-doping level shifts the d-band center of Mo more negatively from the Fermi level, thereby increasing the hydrogen adsorption energy and thus decelerating the hydrogen desorption kinetics, giving consequent inferior HER activities.

25 ENERGY STORAGE↗
DOE OSTI2020

Organismic materials for beyond von Neumann machines

The elementary basis of intelligence in organisms with a central nervous system includes neurons and synapses and their complex interconnections forming neural circuits. In non-neural organisms such as slime mold with gel-like media, viscosity modulation enables adaptation to changing environments. At a larger scale, collective intelligence emerges via social interactions and feedback in animal colonies. Learning and memory are therefore multi-scale features that evolve as a result of constant interactions with the environment. There is growing interest in emulating such features of intelligence in computing machines and autonomous systems. Materials that can respond to their environment in a manner similar to organisms (referred to as "organismic materials") therefore may be of interest as hardware components in artificial intelligence machines. In this brief review, we present a class of semiconductors called correlated oxides as candidates for learning machines. The term "correlated" refers to the fact that electrons in such lattices strongly interact and the ground state is not what is predicted by classical band theory. Such materials can undergo insulator-metal transitions at near ambient conditions under external stimuli such as thermal or electrical fields, strain, and chemical doping. Depending on the mechanism driving the transition, intermediate states can be metastable with different volatilities, and the time scales of phase change can be controlled over many orders of magnitude. The change in electronic properties can be sharp or gradual, leading to digital or analog behavior. These properties enable the realization of artificial neurons and synapses and emulate the associative and non-associative learning characteristics found in various organisms. We examine microscopic properties concerning electronic and structural transitions leading to collective behavior and theoretical treatments of the ground state and dynamical response, showcasing VO 2 as a model system. Next, we briefly review algorithms designed from the plasticity demonstrated by phase changing systems. Finally, we conclude the brief review with suggestions for future research toward realizing non-von Neumann machines.

42 ENGINEERING↗
DOE OSTI2022

Particle–hole asymmetric superconducting coherence peaks in overdoped cuprates

As doping increases in cuprate superconductors, the superconducting transition temperature increases to a maximum at the so-called optimal doping, and then decreases in the overdoped regime. In the past few decades, research has primarily focused on the underdoped and optimally doped regions of the phase diagram. Here, phenomena such as the pseudogap and strange metal non-superconducting states make it difficult to determine the superconducting pairing mechanism. More recently, experiments have shown unconventional behaviour in strongly overdoped cuprates, in both the normal and superconducting states. However, a real-space investigation of the unconventional superconductivity in the absence of the pseudogap is lacking, and the superconductor-to-metal phase transition in the overdoped regime remains controversial. Here we use scanning tunnelling microscopy to investigate the atomic-scale electronic structure of overdoped Bi 2 Sr 2 Ca n–1 Cu n O 2n + 4 + δ cuprates. We show that, at low energies, the spectroscopic maps are well described by dispersive d-wave quasiparticle interference patterns. However, as the bias increases to the superconducting coherence peak energy, a periodic and non-dispersive pattern emerges. The position of the coherence peaks exhibits particle–hole asymmetry that modulates with the same period. Finally, we propose that this behaviour is due to quasiparticle interference caused by pair-breaking scattering between flat antinodal Bogoliubov bands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗
DOE OSTI2018

High Efficiency Fiber-Coupled Diode Lasers for Resonant Pumping of Fiber Lasers

In this program, we have been developing high power, high efficiency laser diodes in InP, operating at 1532 nm and 1910 nm. These lasers have applications in resonant pumping eye-safe laser gain media, such as Erbium or Thulium doped fiber lasers, emitting in the ranges of 1600 nm and 1800-2000 nm, respectively. While such fiber lasers may be pumped with shorter wavelength diode lasers (e.g. 790 nm or 976 nm GaAs didoes), there are advantages to pumping with diode laser light that is closer in wavelength to the fiber laser emission, a technique known as resonant pumping. These advantages include lower quantum defect (the energy lost due to pump and emission at different wavelengths), increased eye-safety of system, decreased waste heat, and potential for lower overall system efficiency. We have achieved diode laser performance with peak electrical-to-optical (EO) efficiency of 39% at 15xx nm and 13% at 19xx nm, a significant advancement over current state-of-the-art. The rated output power and efficiency for these lasers are 4.0 W at 34% EO for 15xx nm, and 1.1 W at 11% EO for 19xx nm. We have designed and built a fiber-coupled-module at 15xx nm. There are many improvements to be made to increase the output power and efficiency of the module, but in our preliminary demonstration, we have achieved a fiber coupling efficiency of 85%.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2020

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Charge density wave and superconductivity competition in Lu 5 Ir 4 Si 10 : A proton irradiation study

Real-space modulated charge density waves (CDW) are a ubiquitous feature in many families of superconductors. In particular, how CDW relates to superconductivity is an active and open question that has recently gathered much interest since CDWs have been discovered in many cuprates superconductors. Here we show that disorder induced by proton irradiation is a full-fledged tuning parameter that can bring essential information to answer this question as it affects CDW and superconductivity with different and unequivocal mechanisms. Specifically, in the model CDW superconductor Lu 5 Ir 4 Si 10 that develops a 1D CDW below 77 K and s-wave superconductivity below 4 K, we show that disorder enhances the superconducting critical temperature T c and H c2 while it suppresses the CDW. Discussing how disorder affects both superconductivity and the CDW, we make a compelling case that superconductivity and CDW are competing for electronic density of states at the Fermi level in Lu 5 Ir 4 Si 10 , and we reconcile the results obtained via the more common tuning parameters of pressure and doping. Owing to its prototypical, 1D, Peierls type CDW and the s-wave, weak-coupling nature of its superconductivity, this irradiation study of Lu 5 Ir 4 Si 10 provides the basis to understand and extend such studies to the more complex cases of density waves and superconductivity coexistence in heavy fermions, Fe-based, or cuprates superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Probing Electron Correlations in 1D Electronic Materials Using Single Quantum Channels (Final Technical Report)

This research focuses on the investigation of strong electron correlations in quasi-one-dimensional oxide nanostructures. The archetypical system consisting of heterostructures formed from an ultrathin layer of LaAlO 3 and TiO 2 -terminated SrTiO 3 offers a unique laboratory for probing strong correlations due to intrinsic richness of the physical system and its ability to be modulated at extreme nanoscale dimensions. Under suitable conditions, SrTiO 3 is known to exhibit a variety of important properties associated with strong electronic correlations, especially superconductivity, magnetism. Understanding the nature of these electronic correlations at fundamental scales, and in reduced spatial dimensions, will provide the scientific basis for new energy technologies, information technologies, and materials. The research program is motivated by recent discoveries and technical advances in the PIs' lab, specifically, (1) pioneering work to create conductive nanostructures to be created in LaAlO 3 /SrTiO 3 heterointerfaces with 2 nm spatial resolution, (2) the discovery of a novel correlated electronic phases in which electrons pair without forming a superconductor, and (3) the demonstrated ability to form high-quality quantum point contacts (QPCs) and achieve ballistic electron transport over micrometer-scales in LaAlO 3 /SrTiO 3 nanowires. The program has three major components. First, we have press forward to develop a full microscopic understanding of the mechanism for electron pairing in LaAlO 3 /SrTiO 3 nanostructures. Understanding the “glue” that leads to pairing and superconductivity in a doped semiconductor will help to form a scientific basis for the correlated oxide nanoelectronics platform being developed. Second, we have used their ability to create well-defined quantum channels in nanowires allows to allow novel “scattering” experiments to be performed that probe fundamentally new quasiparticle excitations using an unprecedented combination of experimental methodologies. Experiments already underway with artificially defined superlattices (5 nm period) demonstrate the feasibility of this approach. Third, we have investigated 1D correlations in proximally coupled nanowires, which are predicted exhibit Majorana-like zero modes in the absence of superconductivity or spin-orbit coupling. These studies provide insight not only into new and emergent phenomena in the rich class of complex oxides, but also fundamental mechanisms of superconductivity and magnetism. Thematically, the research aims to combine some of the most important and interesting challenges in the physics of semiconductor nanostructures and correlated electronic materials. The increased understanding of electron correlations can pave the way to the development of new materials with outstanding or novel properties, which could be relevant for energy-related technologies such as low-power high performance computing, quantum computation, or the development of novel materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

First-Principles Treatment of Vibrational Broadening in X-Ray Excited Valence Band Spectra for n-SrTiO 3 (001)

The valence band maximum (VBM) is an important quantity for semiconductors as it locates the Fermi level relative to the band edge. Accurate measurement of this quantity in near-surface regions of semiconductors by photoemission is a first step toward determining the electronic properties of heterostructures involving these materials. While extrapolating the leading edge of the valence band to the energy axis in photoemission spectra is a widely used way to find the VBM, this method can be ambiguous if the leading edge exhibits multiple slopes. Another way to determine the VBM is to fit the leading edge to an appropriately broadened, cross-section modulated theoretical density of states (DOS). Three kinds of broadening that should be included for maximum accuracy are those due to: (1) finite instrumental resolution, (2) valence hole lifetime, and (3) vibrational excitations. While steps (1) and (2) are straightforward to implement, (3) is more difficult because the appropriate amount of broadening is not known a priori. Here, we demonstrate that explicit inclusion of vibrational broadening using ab initio molecular dynamics facilitates accurate VBM determination for n-SrTiO 3 (001). The total DOS is constructed by summing time-averaged projections at elevated temperature onto s - , p - , and d orbitals for the constituent atoms and modulating with the associated photoemission cross sections. Subsequent convolutions of the total DOS, first with a Gaussian of width equal to the experimental energy resolution and second with a Lorentzian to simulate valence hole lifetime effects, yield line shapes that reproduce the experimental leading edges rather well. The VBM is then given by the energy at which the vibrationally broadened total DOS (prior to the convolutions) goes to zero. The VBMs generated by this method quantitatively agree with those resulting from extrapolating from the middle of the measured leading edge for SrTiO 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Development of Carbon Molecular Sieves Hollow Fiber Membranes based on Polybenzimidazole Doped with Polyprotic Acids with Superior H 2 /CO 2 Separation Properties (Final Report)

The goal of this project was to develop a highly efficient membrane-based process to capture CO 2 from coal-derived syngas with 95% CO 2 purity, achieving the cost of electricity (COE) 30% below the baseline capture approaches (i.e., Selexol process) when coupled with the advancement in other areas of the power generation facility. Our core approach is based on high-permeance hollow fiber membranes (HFMs) with superior H 2 /CO 2 separation properties at the syngas process conditions, which can then be further utilized to design membrane reactors for process intensification of H 2 production and purification and CO 2 capture. Three organizations with complementary skills collaborated to achieve the goal, including the University at Buffalo (UB), Los Alamos National Laboratory (LANL), and Trimeric Corporation (Trimeric). We formulated logical steps to bring the membrane technology from Technology Readiness Level (TRL) 3 (Experimental proof of concept) to TRL 4 (Laboratory scale validation in relevant environment). During the budget period (BP) 1, we screened various polymeric materials and identified polybenzimidazole doped with inorganic polyprotic acids as the desirable platform. The acid doping increases the H 2 /CO 2 selectivity, and the sequential carbonization increases H 2 permeability while retaining the high selectivity. By manipulating the acid type and doping level and the carbonization temperature, we demonstrated advanced carbon molecular sieving (CMS) materials with H 2 permeability of above 200 Barrer (1 Barrer = 10 -10 cm 3 (STP) cm cm -2 s -2 cmHg -1 ) and H 2 /CO 2 selectivity of above 40 at 200-300°C with simulated syngas containing CO and water vapor. For example, the PBI-(H 3 PO 4 ) 0.11 carbonized at 700 °C exhibits H 2 permeability of 200 Barrer and H 2 /CO 2 selectivity of 60 at 200 °C, and H 2 permeability of 240 Barrer and H 2 /CO 2 selectivity of 54 at 225 °C, which meets the targeted properties and surpasses Robeson’s upper bound. During the BP2, we focused on the conversion of the advanced CMS materials to stable HFMs. Membranes with H 2 permeance of 1,090 GPU (1 GPU = 10 -6 cm 3 (STP) cm -2 s -2 cmHg -1 ) and H 2 /CO 2 selectivity of 57 at 300 °C were successfully fabricated. The effects of temperature, gas compositions, pressure, and time on the separation properties were systematically investigated. Pencil modules were continuously evaluated for 219 h (dry pure gas) and 669 h (dry simulated syngas) and showed initial decline in permeance and increased H 2 /CO 2 selectivity over time, ultimately achieving a steady state stable value, indicating that the ageing phenomena in the nanoporous structures of the membranes during the test. Membrane reactors were fabricated based on the CMS membranes and evaluated for water-gas shift (WGS) reaction. The use of membranes slightly improves the conversion of the CO. However, parametric tests of the membrane reactors at various temperatures and flow rates need to be conducted, as well as the membranes with improved separation performance. We performed a sensitivity analysis on the impact of H 2 /CO 2 selectivity on the COE based on a hybrid process of a membrane unit and cryogenic unit developed by Membrane Technology and Research, Inc. (MTR). Three H 2 /CO 2 selectivity (40, 60, and 15) cases were developed and compared with the baseline capture process (Case B5B) provided by the DOE report. Increasing the membrane H 2 /CO 2 selectivity reduces COE, but the rate of the decrease of COE also diminishes. The COE values for H 2 /CO 2 selectivities of 40 and 60 were nearly the same. As the H 2 /CO 2 selectivity increases, the inert recycling decreases, leading to smaller equipment, less auxiliary power requirements, and less heating, cooling, and refrigeration duty. The refrigeration system used to liquefy the CO 2 is the most expensive piece of equipment and consumes the most electricity within the CO 2 capture process. Increasing the CO 2 concentration in the recycle stream would improve the economics of the process by reducing the refrigeration duty requirement of the unit and also allow for higher liquefaction temperatures. The high H 2 -selective membrane developed by our team may be applicable in other separation processes where lower pressure H 2 retains value. Typically, hydrogen retains its pressure when it is separated from syngas components. Residual components may be used as low-quality fuel and then vented to the atmosphere. Applications might include control of H 2 /CO ratios or mitigation of the water gas shift reaction by CO 2 recycling to the feed of a gasifier or steam methane reformer. To summarize, we have developed industrial HFMs with the best H 2 /CO 2 separation performance reported in the literature. The membranes demonstrate stability with simulated syngas and show great potential for membrane reactors for WGS reactions, lowering the cost of blue H 2 production.

20 FOSSIL-FUELED POWER PLANTS↗
NASA NTRS2024

Investigation into the Origin of the RF Phase Noise for the LISA Laser Transmitter

The Laser Interferometer Space Antenna (LISA) mission is a collaborative consortium led by the European Space Agency (ESA)in cooperation with the National Aeronautics and Space Administration (NASA). LISA’s goal is to capture gravitational wave events, such as spacetime distortions caused by massive orbiting bodies. Multiple low noise, single frequency master oscillator power amplifier (MOPA) lasers with a polarization-maintaining Yb-fiber amplifier will serve as the light sources for the LISA observatory. The NASA Goddard Space Flight Center (GSFC)is currently developing the laser transmitters for this project. The LISA lasers will carry radio frequency (RF)sidebands for exchanging reference RF clock information between spacecrafts. Excess phase noise, especially carrier-sideband differential phase noise added to the modulation side band by the phase modulator and the fiber amplifier, becomes a concern. In the gravitational wave frequency ranges, leading sources of this RF “differential” phase noise can be both intrinsic and extrinsic. Examples of intrinsic sources include thermal load on the active fiber, thermo-mechanical induced birefringence, and nonlinearities in the various passive and active fibers. Extrinsic sources can include external temperature fluctuations and infrasonic mechanical strain or vibrations. These noise spectra usually include both white and pink (1/f) thermal noise contributions. This work investigates the physical origins and impact of these sources of RF phase noise, and their characteristic spectra and management will be discussed.

Laser Interferometer Space Antenna↗
DOE OSTI2026

How Proton Incorporation Reshapes Lattice Dynamics In BaSnO 3 ‐Type Proton Conductors

Proton conduction in acceptor-doped perovskites is fundamentally a vibronic process: mobile H + and D + do not move independently, but dynamically co-vibrate with the surrounding oxygen–metal framework. Direct experimental evidence for this behavior is presented using in situ 119⁢ 𝑆⁢𝑛 nuclear resonance vibrational spectroscopy (NRVS) on hydrated, deuterated, and dry 𝐵⁢𝑎⁢𝑆⁢𝑛 1−𝑥⁢ 𝑌 𝑥 ⁢𝑂 3−𝛿 . Hydration induces systematic redistributions in the Sn-projected phonon density of states (PDOS), including an upshift of the first spectral moment by about 0.4 meV, indicating a stiffening of the extended Sn–O network. H/D isotopic substitution leaves the Sn-projected PDOS largely unchanged, with only subtle isotope-dependent spectral reweighting, demonstrating that protonic degrees of freedom are not localized oscillators but are embedded in collective lattice modes. These results are rationalized using a classical coupled proton–phonon oscillator model that links the observed PDOS variations to changes in effective force constants and vibrational mass terms. The model captures how H + and D + participate in cooperative lattice dynamics rather than forming isolated OH/OD entities. Overall, NRVS probes proton–lattice coupling in ceramic proton conductors and quantitatively describes how protonic defects modulate host lattice dynamics to enable phonon-assisted long-range proton transport.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Wide bandgap photoconductor (SiC:V)-based optically addressed light valve for high fluence operation

Optically addressable light valves based on wide bandgap 4H- and 6H-SiC as photoconductors were designed to withstand higher operational laser fluences than the state of-the-art bismuth silicon oxide (BSO; Bi 12 SiO 20 ) based devices. Vanadium-doped SiC was selected as the photoconductors due to their reasonable photoresponsivity while many fold improvement in laser induced damage threshold as compared to BSO. The laser induced damage threshold values of the materials were measured after exposing ~ 200 sites on the samples to increasing levels of fluence of a gaussian pulsed Nd: YAG laser system (1064 nm) with a 5 Hz repetition rate. The measured damage threshold values for BSO, 4H- and 6H-SiC were 0.4 J/cm 2 , 1.75 J/cm 2 and 1.8 J/cm 2 , respectively. Photoconductive switches based on 4H and 6H-SiC samples were characterized at wavelengths of 380 nm, 405 nm, and 447 nm. The peak photoresponsivity values of the 4H- and 6H-SiC materials were measured to be under 380 nm and 405 nm, respectively. The photoconductor was bonded to a BK7 optical window with 5 μm diameter microspheres as spacers. A twisted nematic type E7 liquid crystal (LC) was filled in the 5 μm gap in a vacuum chamber. The desired alignment of the liquid crystal was achieved by mutually orthogonal orientation of LC alignment layers on the two mating faces (SiC and BK7). The fabricated devices were modulated using address beams of wavelengths 380 nm, 405 nm, and 447 nm. In conclusion, required transmission levels of > 90% was achieved for the fabricated OALVs for a sinusoidal voltage waveform that meets the lifetime requirement of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Progress and Challenges in Absorber and Interface Fabrication of Polycrystalline CdTe Photovoltaics

Polycrystalline thin-film CdTe device efficiency of over 19% has been achieved at Colorado State University using a highly repeatable and scalable sublimation process. Record efficiency for research scale CdTe photovoltaics has been reported to be over 22% and highest reported module efficiency is over 18% by First Solar Inc. Use of Se alloying with CdTe to form a lower band-gap CdSexTe1-x (CST) alloy has led to higher devices efficiencies with better current collection. Recent materials characterization has revealed that Se may be responsible for more than just reduction of band-gap. With CdCl2 treatment Cl is known to very effectively passivate defects at CdTe grain boundaries. Recent materials and electrical characterization have shown that Se has a very similar behavior to Cl at the grain boundaries of polycrystalline CdTe. These include Se decorating the grain boundaries like Cl in the diffusion region between CST and CdTe while cross-section cathodoluminescence maps show substantially higher signal intensity in regions with Se. Double heterostructures fabricated using CdSeTe with Al2O3 as a passivating oxide have been measured to have several hundred nanosecond bulk recombination lifetime. These films were also measured to have surface recombination velocity of under 100 cm/s. These results among others emphasis that Se also helps in passivation of grain boundaries. High absorber quality may help in mitigating the voltage deficit that has traditionally been the largest limiting factor in CdTe photovoltaics in achieving efficiency closer to Shockley-Queisser limit. In addition to graded absorber devices and double heterostructures, replacing the traditional Cu doping with more advanced group V doping is an important research effort that maybe critical for future improvements in device efficiency. Nitrogen, Phosphorous, Arsenic and Antimony doping has been investigated by several research groups. Advanced co-sublimation hardware developed at Colorado State University provides researchers with a unique capability of depositing films for group V doping with Cd overpressure. Such deposition under Cd overpressure causes formation of CdV which is known to be favorable for incorporation of group V dopant and activation. Utilizing the high absorber and interface quality material and higher doping, efforts are in progress to fabricate polycrystalline devices with open-circuit voltage over 1V and device efficiency over 24%.

Munshi, Amit↗
DOE OSTI2024

In-situ hydrogen microstructural characterization of Si heterojunction passivation: Addressing V OC degradation and mitigation pathways

Si heterojunction (SHJ) solar cells have demonstrated record efficiency >27%, approaching the theoretical limit of ≈ 29%, primarily due to best surface/interface defect passivation provided by deposited thin layers of hydrogenated amorphous silicon (a-Si:H). Such excellent surface/interface passivation reduces recombination loss and result in >100 mV improvement of cell open circuit voltage (V OC ) to ≈ 750 mV, thus the cell efficiency. However, fielded SHJ modules exhibit loss of V OC and hence efficiency over time in years, presumably due to degradation related to a-Si:H layers. This adversely affects the technology’s market acceptance, and levelized cost of energy (LCOE). It is hypothesized that the origin of a-Si:H degradation is somehow related to the presence of weak Si–Si bonds and hydrogen in a-Si:H films. The objective of this project is to test this hypothesis by directly measuring chemical and structural changes occurring within SHJ component layers and solar cells. This is achieved by developing an innovative in-situ Fourier transform infrared (FTIR) spectrometry apparatus to monitor hydrogen microstructural changes occurring within amorphous silicon and decipher hydrogen evolution kinetics over time when samples are exposed to heat and/or light stress. These in-situ measured hydrogen microstructural changes are correlated to the changes in effective minority carrier lifetime (τ eff ), implied V OC (iV OC ), surface recombination velocity (S), and cell V OC . These mechanistic understandings will provide critical guidance to mitigate the V OC -driven degradation of SHJ solar cell performance. Passivation optimization and degradation analysis of individual SHJ component structures were achieved through systematic deposition of three symmetric structures and the completed SHJ solar cell structure. The three symmetric structures used were intrinsic a-Si:H [(i)a-Si:H] layers in a bilayer structure, intrinsic and p-type doped stacked layers [(i-p)a-Si:H] representing the front heterojunction in the SHJ cell, and intrinsic and n-typed doped stacked layers [(i-n)a-Si:H] representing the back-side back surface field (BSF) in the SHJ cell. State-of-the-art passivation qualities are demonstrated by a champion iV OC of 740 mV for the (i)a-Si:H layers, and the (i-n)a-Si:H symmetric structure. A 725 mV iV OC is observed for the (i-p)a-Si:H symmetric structure. These symmetric passivated SHJ component structures were subsequently subjected to different accelerated lifetime (ALT) stressors to identify which conditions contribute the most to iV OC degradation. Degradation of the thin (10 nm) (i)a-Si:H passivation layers without any additional overlying layers is minimal; complexity of this study arises due to unavoidable surface oxidation of (i)a-Si:H layer during most of the stress application, which is likely irrelevant for a full SHJ cell configuration with overlying protective layers. The iV OC degradation of symmetric structures is found to occur primarily at the (i-p)a-Si:H passivation stack under dark heat stress with associated hydrogen loss from the (p)a-Si:H layer. An activation energy for increase in S (defect creation) of 0.65 eV can be correlated to the activation energy of ≈ 0.4 eV for hydrogen loss from the (i-p)a-Si:H stack. This also suggests the presence of weakly bonded hydrogen in the (p)a-Si:H films, which effuses out of the film stack at such low activation energy. When light and heat stress are applied together, similar hydrogen loss from (i-p)a-Si:H stack is observed, however, does not appreciably degrade iV OC or increase S. This is an important result and departure from direct correlation between hydrogen loss and defect creation. This perhaps indicates additional defect chemistries or annealing that might be occurring in the presence of light requiring further detailed defect measurements. The full SHJ cell structure used for this project is depicted in Fig.1(d). SHJ cells with an initial V OC ≈ 700 mV were fabricated and subjected to similar ALT stress conditions. Cell V OC is found to degrade the most under dark heat stress and is confirmed by observed hydrogen migration out of the (i-p)a-Si:H stack. However, hydrogen cannot escape from the cell stack, it accumulates near the (p)a-Si:H/ITO contact interface, where ITO acts as a barrier preventing hydrogen loss. Furthermore, light-heat combined stress does not degrade V OC appreciably, confirming the occurrence of a defect annealing process.

14 SOLAR ENERGY↗
DOE OSTI2026

Vapor-Phase Heteroatom Incorporation into Semiconductive Molecular-Scale Magic-Size Clusters

Magic-size metal chalcogenide clusters of molecular size exhibit well-defined structure and unique properties that might be further expanded with the incorporation or substitution of a second metal. Here, we report the postmodification of magic-size clusters synthesized in polymer thin films via exposure to volatile metal organic precursors commonly utilized for atomic layer deposition. Exposure of In 6 S 6 (CH 3 ) 6 clusters to dimethylcadmium results in exposure-dependent incorporation of Cd 2+ , which extends the optical absorbance of the clusters into the visible spectrum. The mechanism for Cd 2+ incorporation is consistent with Cd 2+ replacement of In 3+ that includes methyl ligand removal to maintain charge neutrality. Even for clusters embedded in a polymer matrix, ligand loss leads to sintering and transformation into larger nanoscale aggregates with zinc blende-type structure. The extent of Cd incorporation can be modulated by varying the process temperature and volatile metal organic exposure as well as the choice of volatile metal organic precursor. A computational thermodynamic analysis of heteroatom incorporation for several metals and chemistries reveals that both the stability of the substituted cluster and the favorability of reaction byproducts jointly determine the favorability of cation incorporation.

atomic layer deposition↗
NASA NTRS2015

Double-Diffusive Convection During Growth of Halides and Selenides

Heavy metal halides and selenides have unique properties which make them excellent materials for chemical, biological and radiological sensors. Recently it has been shown that selenohalides are even better materials than halides or selenides for gamma-ray detection. These materials also meet the strong needs of a wide band imaging technology to cover ultra-violet (UV), midwave infrared wavelength (MWIR) to very long wavelength infrared (VLWIR) region for hyperspectral imager components such as etalon filters and acousto-optic tunable filters (AO). In fact AOTF based imagers based on these materials have some superiority than imagers based on liquid crystals, FTIR, Fabry-Perot, grating, etalon, electro-optic modulation, piezoelectric and several other concepts. For example, broadband spectral and imagers have problems of processing large amount of information during real-time observation. Acousto-Optic Tunable Filter (AOTF) imagers are being developed to fill the need of reducing processing time of data, low cost operation and key to achieving the goal of covering long-wave infrared (LWIR). At the present time spectral imaging systems are based on the use of diffraction gratings are typically used in a pushbroom or whiskbroom mode. They are mostly used in systems and acquire large amounts of hyperspectral data that is processed off-line later. In contrast, acousto-optic tunable filter spectral imagers require very little image processing, providing new strategies for object recognition and tracking. They are ideally suited for tactical situations requiring immediate real-time image processing. But the performance of these imagers depends on the quality and homogeneity of acousto-optic materials. In addition for many systems requirements are so demanding that crystals up to sizes of 10 cm length are desired. We have studied several selenides and halide crystals for laser and AO imagers for MWIR and LWIR wavelength regions. We have grown and fabricated crystals of several materials such as mercurous chloride, mercurous bromide, mercurous iodide, lead chloride lead bromide, lead iodide, thallium arsenic selenide, gallium selenide, zince sulfide zinc selenide and several crystals into devices. We have used both Bridgman and physical vapor transport (PVT) crystal growth methods. In the past have examined PVT growth numerically for conditions where the boundary of the enclosure is subjected to a nonlinear thermal profile. Since past few months we have been working on binary and ternary materials such as selenoiodides, doped zinc sulfides and mercurous chloro bromide and mercurous bromoiodides. In the doped and ternary materials thermal and solutal convection play extremely important role during the growth. Very commonly striations and banding is observed. Our experiments have indicated that even in highly purified source materials, homogeneity in 1-g environment is very difficult. Some of our previous numerical studies have indicated that gravity level less than 10-4 (-g) helps in controlling the thermosolutal convection. We will discuss the ground based growth results of HgClxBr(1-x) and ZnSe growth results for the mm thick to large cm size crystals. These results will be compared with our microgravity experiments performed with this class of materials. For both HgCl-HgBr and ZnS-ZnSe the lattice parameters of the mixtures obey Vagard's law in the studied composition range. The study demonstrates that properties are very anisotropic with crystal orientation, and performance achievement requires extremely careful fabrication to utilize highest figure of merit. In addition, some parameters such as crystal growth fabrication, processing time, resolution, field of view and efficiency will be described based on novel solid solution materials. It was predicted that very similar to the pure compounds solid solutions also have very large anisotropy, and very precise oriented and homogeneous bulk and thin film crystals is required to achieve maximum performance of laser or imagers. Some of the parameters controlling the homogeneity such as thermos-solutal convection driven forces can be controlled in microgravity environments to utilize the benefits of these unique materials.

Singh, N. B.↗