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Results for “surface morphology”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Molecular dynamics simulation of gold cluster growth during sputter deposition

We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Spatial atomic layer deposition of ZnO/TiO{sub 2} nanolaminates

Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO{sub 2} films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO{sub 2} film shows suitable optical transmittance and band gap. The ZnO/TiO{sub 2} nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO{sub 2}. The grazing incidence x-ray diffraction spectra of nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO{sub 2} laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers.

42 ENGINEERING↗
DOE OSTI2018

Growth from Solutions, Structure, and Photoluminescence of Single-Crystal Plates of p-Terphenyl and Its Trimethylsilyl Derivative

Samples of single-crystal plates of p-terphenyl (3Р) and its derivative with terminal substituents–Si(CH{sub 3}){sub 3} (TMS-3P-TMS), up to 25–30 mm in size and 400 μm thick, have been obtained for the first time by the solvent–antisolvent growth method. The crystal structure at temperatures of 293 and 85 K is refined for 3Р and solved (for the first time) for TMS-3P-TMS using X-ray diffraction. The habit of crystals and their surface morphology are investigated by methods of optical and laser confocal microscopy. The influence of substituent terminal groups -Si(CH{sub 3}){sub 3} on the growth and structure of TMS-3P-TMS crystals is analyzed based on experimental data. The optical absorption and photoluminescence spectra of solutions and crystalline samples are investigated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Near-terminator photography, part R

The advantages resulting from the use of near-terminator photography in lunar surface investigations are discussed. It is pointed out that, under near-terminator conditions, small changes in slope produce greater contrast changes than at high sun elevation angles. This desirable phenomenon is confirmed by an examination of the near-terminator photography taken during the Apollo 15 mission. Many of the photographs obtained show lunar surface areas within a few degrees of the terminator and are therefore of significant geologic interest. In addition, many geologic features stand out in a distinct manner not normal in conventional lunar photography, thus providing additional data on the surface morphology and the configuration of a large number of lunar surface structures.

Head, J. W.↗
NASA NTRS1987

Degradation mechanisms of materials for large space systems in low Earth orbit

Degradation was explored of various materials used in aerospace vehicles after severe loss of polymeric material coatings (Kapton) was observed on an early shuttle flight in low Earth orbit. Since atomic oxygen is the major component of the atmosphere at 300 km, and the shuttle's orbital velocity produced relative motion corresponding to approx. 5 eV of oxygen energy, it was natural to attribute much of this degradation to oxygen interaction. This assumption was tested using large volume vacuum systems and ion beam sources, in an exploratory effort to produce atomic oxygen of the appropriate energy, and to observe mass loss from various samples as well as optical radiation. Several investigations were initiated and the results of these investigations are presented in four papers. These papers are summarized. They are entitled: (1) The Space Shuttle Glow; (2) Laboratory Degradation of Kapton in a Low Energy Oxygen Ion Beam; (3) The Energy Dependence and Surface Morphology of Kapton Degradation Under Atomic Oxygen Bombardment; and (4) Surface Analysis of STS 8 Samples.

Gordon, William L.↗
NASA NTRS1999

Structure and Morphology of Phthalocyanine Films Grown in Electrical Fields by Vapor Deposition

Phthalocyanine is a very stable organic material in the atmosphere and has been used in numerous applications, such as optical switching and optical storage devices. Although this material has already been discovered for several decades and has had extensive studies conducted on it, many properties still need to be better understood, for example, the mechanisms of forming different solid phases and of changing film morphology by external forces. Phthalocyanine has two preferred solid phases (alpha and beta phases) for which the crystal structures, surface morphology and optical properties are different. In order to investigate these phenomena and the relationship among them, phthalocyanine films have been synthesized by vapor deposition on quartz substrates with and without an external electrical field. Some substrates were coated with a very thin gold film for the electrical field. These films have been characterized using x-ray diffraction, scanning electron microscopy, Fourier transfer infrared spectroscopy, and Z-scan technique. The films have excellent chemical and thermal stability. However, the surface of these films grown without the electrical field shows flower-like morphology. When films are deposited under an electrical field (approximately 3000 V/cm), an aligned structure is revealed on the surface. A comparison of the structure, morphology, optical properties, and the growth mechanism for these films with and without an electrical field will be discussed.

Zhu, Shen↗
DOE OSTI2015

Adsorption of basic Red 46 using sea mango (Cerbera odollam) based activated carbon

Sea mango or Cerbera Odollam is another source of carbonaceous material that can be found abundantly in Malaysia. In this research, it is used as a new agricultural source of activated carbon. Sea mango activated carbon was prepared by chemical activation using potassium hydroxide (KOH). The sea mango was soaked in KOH at impregnation ratio of 1:1 and followed by carbonization at temperature of 600°C for 1 hour. The sample was then characterized using Scanning Electron Microscope (SEM) for surface morphology, while Brunauer-Emmett-Teller (BET) was used to study the surface area. The result shown that sea mango activated carbon (SMAC) developed new pores on its surface and the BET surface area measured was 451.87 m{sup 2}/g. The SMAC performance was then tested for the removal of Basic Red 46 in batch process. The removal of Basic Red 46 (50 mg/L, natural pH, 0.1 g SMAC) was more than 99% in 15 minutes where it reached equilibrium in 30 minutes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Comparison of the structural and chemical composition of two unique micro/nanostructures produced by femtosecond laser interactions on nickel

The structural and chemical composition of two unique microstructures formed on nickel, with nanoscale features, produced using femtosecond laser surface processing (FLSP) techniques is reported in this paper. These two surface morphologies, termed mounds and nanoparticle-covered pyramids, are part of a larger class of self-organized micro/nanostructured surfaces formed using FLSP. Cross-sections of the structures produced using focused ion beam milling techniques were analyzed with a transmission electron microscope. Both morphologies have a solid core with a layer of nanoparticles on the surface. Energy dispersive X-ray spectroscopy by scanning transmission electron microscopy studies reveal that the nanoparticles are a nickel oxide, while the core material is pure nickel.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The correlation of epitaxial graphene properties and morphology of SiC (0001)

The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1978

Sublimate morphology on 74001 and 74002 orange and black glassy droplets

SEM-EDX analysis of the surface morphology of the 74001 and 74002 orange and black glassy droplets has revealed the presence of ubiquitous micromound coatings. Assuming that the diameter of an individual micromound is an indication of total coating thickness, then the thickness of this volatile and metal-rich layer ranges from less than 20 A to over 300 A in thickness. On rare droplets the micromound coating is partially covered by a sparse population of crystals and masses that are essentially NaCl in composition. Additionally, an irregular mass on the surface of one black droplet may contain free sulfur. Amoeboid masses of iron, some with incipient crystal faces, are also present on a few droplet surfaces. The above features, i.e., halite crystals, sulfur-rich masses and amoeboid iron, are rare; the more common occurrence of metals and volatiles is in the micromound coating. Based on our observations of several hundred spheres from both Apollo and Luna missions, the classic micromound coating is unique to the Apollo 15 green and Apollo 17 orange and black droplets. Although some investigators have proposed various impact sequences to produce these unique droplets, the volcanic fire fountain origin is favored.

Clanton, U. S.↗
DOE OSTI2013

Influence of plasma-based in-situ surface cleaning procedures on HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack properties

We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO{sub 2} gate dielectrics deposited on n-In{sub 0.53}Ga{sub 0.47}As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Suppression of Rotational Twins in Epitaxial B 12 P 2 on 4H-SiC

B 12 P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$11\bar{20}$] and a custom miscut 4° toward the [$1\bar{10}0$]. Epitaxy on substrates miscut to the [$11\bar{20}$] resulted in highly twinned B 12 P 2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$1\bar{10}0$] produced films of >99% twin orientation I. A H 2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B 12 P 2 twin orientations. Surface steps on substrates miscut to the [$11\bar{20}$] tend to be zig-zagged with steps rotated 60° from one another producing B 12 P 2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$1\bar{10}0$] tend to be parallel resulting in crystallographically aligned B 12 P 2 nucleation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Laser-induced periodic annular surface structures on fused silica surface

We report on the formation of laser-induced periodic annular surface structures on fused silica irradiated with multiple femtosecond laser pulses. This surface morphology emerges after the disappearance of the conventional laser induced periodic surface structures, under successive laser pulse irradiation. It is independent of the laser polarization and universally observed for different focusing geometries. We interpret its formation in terms of the interference between the reflected laser field on the surface of the damage crater and the incident laser pulse.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Low-temperature scanning tunneling microscopy and transport measurements on adsorbate-induced two-dimensional electron systems

We have performed not only magnetotransport measurements on two-dimensional electron systems (2DESs) formed at the cleaved surfaces of p-InAs but also observations of the surface morphology of the adsorbate atoms, which induced the 2DES at the surfaces of narrow band-gap semiconductors, with use of a scanning tunneling microscopy. The electron density of the 2DESs is compared to the atomic density of the isolated Ag adatoms on InAs surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Precision control of thermal transport in cryogenic single-crystal silicon devices

We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path ℓ is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ℓ, even when the surface is fairly smooth, 5–10 nm rms, and the peak thermal wavelength is 0.6 μm. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ℓ, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of ±8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Current-induced surface roughness reduction in conducting thin films

Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film’s wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. In conclusion, the modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

36 MATERIALS SCIENCE↗