Search NASA⌕ Search

SEARCH · Search NASA

Results for “APPLES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Time temperature transformation diagram for secondary crystal products of Co-based Co-Fe-B-Si-Nb-Mn soft magnetic nanocomposite

Secondary crystallization is the subject of much investigation in magnetic amorphous and nanocomposites (MANCs) as it limits the long term and thermal stability of their operation in device applications, including power electronics, sensors, and electric motors. Secondary crystal products [Blazquez et al., Philos. Mag. Lett. 82(7), 409–417 (2002); Ohodnicki et al., Phys. Rev. B 78, 144414 (2008); Willard et al., Metall. Mater. Trans. A 38, 725 (2007)], nanostructure and crystallization kinetics [Hsiao et al., IEEE Trans. Magn. 38(5), 3039 (2002); McHenry et al., Scr. Mater. 48(7), 881 (2003)], and onset temperatures and activation energies [Ohodnicki et al., Acta. Mater. 57, 87 (2009); Long et al., J. Appl. Phys. 101, 09N114 (2007)] at constant heating have been reported for similar alloys. However, a time-temperature-transformation (TTT) diagram for isothermal crystallization, more typical of application environments, has not been reported in literature. Here, a TTT diagram for the Co based, Co-Fe-Si-Nb-B-Mn MANC system is presented, along with a method for determining such. The method accounts for the presence of primary crystal phases and yields crystal fraction of secondary phase(s) by using a novel four stage heating profile. The diagram, affirmed by Kissinger activation energy analysis, reports thermal stability of the MANC for millennia at conventional device operating temperatures, and stability limits less than a minute at elevated temperatures. Both extremes are necessary to be able to avoid secondary crystalline products and establish operating limits for this mechanically attractive, high induction soft magnetic nanocomposite.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optimisation of geometrical ratchets for spin-current amplification

A two-dimensional model is used to study the geometrical effects of a nonmagnetic (NM) nanowire upon a spin-polarised electron current in a lateral spin-valve structure. We found that the implemented ratchet shapes at the centre of the NM have a crucial effect on the diffusive rate for up- and down-spin electrons along the wire, which leads to the amplification of non-local spin-current signals. By using our simple model, the geometries have been optimised. The calculated spin-current signals are in good qualitative agreement with our recent experimental results [Abdullah et al., J. Phys. D: Appl. Phys. 47, 482001(FTC) (2014)]. Our model may be very useful to evaluate such a geometrical effect on spin-polarised electron transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Coalescence-controlled and coalescence-free growth regimes during deposition of pulsed metal vapor fluxes on insulating surfaces

The morphology and physical properties of thin films deposited by vapor condensation on solid surfaces are predominantly set by the processes of island nucleation, growth, and coalescence. When deposition is performed using pulsed vapor fluxes, three distinct nucleation regimes are known to exist depending on the temporal profile of the flux. These regimes can be accessed by tuning deposition conditions; however, their effect on film microstructure becomes marginal when coalescence sets in and erases morphological features obtained during nucleation. By preventing coalescence from being completed, these nucleation regimes can be used to control microstructure evolution and thus access a larger palette of film morphological features. Recently, we derived the quantitative criterion to stop coalescence during continuous metal vapor flux deposition on insulating surfaces—which typically yields 3-dimensional growth—by describing analytically the competition between island growth by atomic incorporation and the coalescence rate of islands [Lü et al., Appl. Phys. Lett. 105, 163107 (2014)]. Here, we develop the analytical framework for entering a coalescence-free growth regime for metal vapor deposition on insulating substrates using pulsed vapor fluxes, showing that there exist three distinct criteria for suppressing coalescence that correspond to the three nucleation regimes of pulsed vapor flux deposition. The theoretical framework developed herein is substantiated by kinetic Monte Carlo growth simulations. Our findings highlight the possibility of using atomistic nucleation theory for pulsed vapor deposition to control morphology of thin films beyond the point of island density saturation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of Cu substitution on the magnetic and dielectric properties of La{sub 2}NiMnO{sub 6}

In the continuation of our previous work [Biswal et al., J. Appl. Phys. 115, 194106 (2014)] of biphasic La{sub 2}NiMnO{sub 6} (LNM) prepared via sol-gel technique, here we are reporting the effect of Cu substitution at Ni site of LNM. The powder x-ray diffraction results of La{sub 2}Ni{sub 1−x}Cu{sub x}MnO{sub 6} (x = 0, 0.05, 0.1) confirm the biphasic nature (Pbnm + R-3c) for all samples along with increasing R-3c phase with Cu content in the sample. The temperature variation of magnetization (M) plot shows sharp ferromagnetic transitions of R-3c phase at 285 K, 278 K, and 270 K (obtained from dM/dT plot) and that of Pbnm phase at 165 K, 145 K, and 145 K for x = 0, 0.05, and 0.1, respectively. Weak antiferromagnetic type feature at 25 K (x = 0), is getting pronounced with Cu content in the sample and is now seen at 32 K and 266 K (for x = 0.05) and 32K and 257 K (for x = 0.1). Fitting of Curie-Weiss law in the paramagnetic region of χ{sup −1} vs T plot results slightly lower values of corresponding T{sub c}'s of R-3 c phase (277 K, 270 K, and 260 K), thus manifesting possibility of Griffiths like singularity. The onset temperature of Griffiths singularity occurs at 295 K (x = 0) and 281 K (x = 0.05 and 0.1), such that 295–277 K in x = 0, 281–270 K in x = 0.05, and 281–260 K in x = 0.1 sample is in Griffith's phase. Temperature dependent dielectric constant (ε{sub r}) shows usual step-like transitions with corresponding relaxation peaks in the dielectric loss (D) part. Cu substitution in LNM makes the entire dielectric plot shifts towards lower temperature such that high temperature plateau of step transition becomes evident. The peaks in dielectric loss for all compositions are found to obey Arrhenius law with activation energies 237 meV, 207 meV, and 180 meV for x = 0, 0.05, and 0.1, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10{sup 11 }W cm{sup −2} which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Perspectives on using implicit type constitutive relations in the modelling of the behaviour of non-Newtonian fluids

We discuss the benefits of using the so-called implicit type constitutive relations introduced by K. R. Rajagopal, J. Fluid Mech. 550, 243-249 (2006) and K. R. Rajagopal, Appl. Math. 48, 279-319 (2003) in the description of the behaviour of non-Newtonian fluids. In particular, we focus on the benefits of using the implicit type constitutive relations in the mathematical modelling of fluids in which the shear stress/shear rate dependence is given by an S-shaped curve, and in modelling of fluids that exhibit nonzero normal stress differences. We also discuss a thermodynamical framework that allows one to cope with the implicit type constitutive relations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Controlling the optical bistability in a multi-level atomic system via similar parameters of quantum well nanostructure

The spontaneously generated coherence (SGC) effects on optical bistability (OB) are investigated in a five-level K-type system. It is found that SGC makes the system phase dependent. Thus, the OB and the absorption behavior of the system can be controlled by the relation phase of applied fields. In addition, the pump field intensity effect on the OB behavior is discussed. The experimental viability of the model in semiconductor quantum well system is also discussed [A. V. Germanenko et al., J. Phys.: Conf. Ser. 376, 012024 (2012); D. S. Chemla et al., IEEE J. Quantum Electron. 20(3), 265 (1984); L. V. Butov et al., J. Exp. Theor. Phys. 88(5), 1036 (1999); J. F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005); S. Schmitt-Rinka et al., Adv. Phys. 38(2), 89 (1989); and H. W. Liu et al., Appl. Phys. Lett. 54, 2082 (1989)].

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electronic structures and formation energies of pentavalent-ion-doped SnO{sub 2}: First-principles hybrid functional calculations

We studied the electronic properties and relative thermodynamic stability of several pentavalent-ion (Ta, Nb, P, Sb, and I) doped SnO{sub 2} systems using first-principles hybrid density functional theory calculations, in order to evaluate their potential as transparent conducting oxides (TCOs). I-doped SnO{sub 2}, though conductive, shows a narrowed optical band gap with respect to the undoped system due to the formation of gap states above the valence band. Nb-doped SnO{sub 2} forms localized impurity states below the conduction band bottom, suggesting that the Nb dopant exists as an Nb{sup 4+}-like cation, which is consistent with the recent experimental finding of the formation of the impurity level below the conduction band bottom [Appl. Phys. Express 5, 061201 (2012)]. Ta- and Sb-doped SnO{sub 2} display n-type conductivity, high charge carrier density, and widened optical band gap. P-doped SnO{sub 2} shows similar n-type electronic properties with that of Sb- and Ta-doped systems, and thus P-doped SnO{sub 2} is proposed as a promising candidate TCO for further experimental validation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Prediction of new high pressure structural sequence in thorium carbide: A first principles study

In the present work, we report the detailed electronic band structure calculations on thorium monocarbide. The comparison of enthalpies, derived for various phases using evolutionary structure search method in conjunction with first principles total energy calculations at several hydrostatic compressions, yielded a high pressure structural sequence of NaCl type (B1) → Pnma → Cmcm → CsCl type (B2) at hydrostatic pressures of ∼19 GPa, 36 GPa, and 200 GPa, respectively. However, the two high pressure experimental studies by Gerward et al. [J. Appl. Crystallogr. 19, 308 (1986); J. Less-Common Met. 161, L11 (1990)] one up to 36 GPa and other up to 50 GPa, on substoichiometric thorium carbide samples with carbon deficiency of ∼20%, do not report any structural transition. The discrepancy between theory and experiment could be due to the non-stoichiometry of thorium carbide samples used in the experiment. Further, in order to substantiate the results of our static lattice calculations, we have determined the phonon dispersion relations for these structures from lattice dynamic calculations. The theoretically calculated phonon spectrum reveal that the B1 phase fails dynamically at ∼33.8 GPa whereas the Pnma phase appears as dynamically stable structure around the B1 to Pnma transition pressure. Similarly, the Cmcm structure also displays dynamic stability in the regime of its structural stability. The B2 phase becomes dynamically stable much below the Cmcm to B2 transition pressure. Additionally, we have derived various thermophysical properties such as zero pressure equilibrium volume, bulk modulus, its pressure derivative, Debye temperature, thermal expansion coefficient and Gruneisen parameter at 300 K and compared these with available experimental data. Further, the behavior of zero pressure bulk modulus, heat capacity and Helmholtz free energy has been examined as a function temperature and compared with the experimental data of Danan [J. Nucl. Mater. 57, 280 (1975)].

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Discrete space charge affected field emission: Flat and hemisphere emitters

Models of space-charge affected thermal-field emission from protrusions, able to incorporate the effects of both surface roughness and elongated field emitter structures in beam optics codes, are desirable but difficult. The models proposed here treat the meso-scale diode region separate from the micro-scale regions characteristic of the emission sites. The consequences of discrete emission events are given for both one-dimensional (sheets of charge) and three dimensional (rings of charge) models: in the former, results converge to steady state conditions found by theory (e.g., Rokhlenko et al. [J. Appl. Phys. 107, 014904 (2010)]) but show oscillatory structure as they do. Surface roughness or geometric features are handled using a ring of charge model, from which the image charges are found and used to modify the apex field and emitted current. The roughness model is shown to have additional constraints related to the discrete nature of electron charge. The ability of a unit cell model to treat field emitter structures and incorporate surface roughness effects inside a beam optics code is assessed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Normal and abnormal evolution of argon metastable density in high-density plasmas

A controversial problem on the evolution of Ar metastable density as a function of electron density (increasing trend versus decreasing trend) was resolved by discovering the anomalous evolution of the argon metastable density with increasing electron density (discharge power), including both trends of the metastable density [Daltrini et al., Appl. Phys. Lett. 92, 061504 (2008)]. Later, by virtue of an adequate physical explanation based on a simple global model, both evolutions of the metastable density were comprehensively understood as part of the abnormal evolution occurring at low- and high-density regimes, respectively, and thus the physics behind the metastable evolution has seemed to be clearly disclosed. In this study, however, a remarkable result for the metastable density behavior with increasing electron density was observed: even in the same electron density regime, there are both normal and abnormal evolutions of metastable-state density with electron density depending on the measurement position: The metastable density increases with increasing electron density at a position far from the inductively coupled plasma antenna but decreases at a position close to the antenna. The effect of electron temperature, which is spatially nonuniform in the plasma, on the electron population and depopulation processes of Argon metastable atoms with increasing electron density is a clue to understanding the results. The calculated results of the global model, including multistep ionization for the argon metastable state and measured electron temperature, are in a good agreement with the experimental results.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on optical anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures

Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa)N based LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study

For GaP-on-Si(100) heteroepitaxy, currently considered as a model system for monolithic integration of III–V semiconductors on Si(100), the surface steps of Si(100) have a major impact on the quality of the GaP film. Monoatomic steps cause antiphase domains in GaP with detrimental electronic properties. A viable route is to grow the III–V epilayer on single-domain Si(100) with biatomic steps, but preferably not at the expense of reduced terrace widths introduced by miscut substrates. We have performed in situ investigations of the influence of Ga deposition on the kinetics of surface steps and terraces of Si(100) at substrate temperatures above 600 °C by low-energy electron microscopy. Starting from nearly equally distributed T{sub A} and T{sub B} terraces of a two-domain Si(100) surface, submonolayer deposition of Ga results in a transformation into a surface dominated by T{sub A} terraces and biatomic D{sub A} steps. This transformation is reversible, and Si(100) with monoatomic steps is recovered upon termination of the Ga flux. Under conditions of higher coverages (but still below 0.25 monolayer), we observe restructuring into a surface with T{sub B} dominance, similar to the findings of Hara et al. [J. Appl. Phys. 98, 083515 (2005)]. The occurrence and mutual transformations of surface structures with different terrace and step structures in a narrow range of temperatures and Ga deposition rates is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Weakly nonlinear Bell-Plesset effects for a uniformly converging cylinder

In this research, a weakly nonlinear (WN) model has been developed considering the growth of a small perturbation on a cylindrical interface between two incompressible fluids which is subject to arbitrary radial motion. We derive evolution equations for the perturbation amplitude up to third order, which can depict the linear growth of the fundamental mode, the generation of the second and third harmonics, and the third-order (second-order) feedback to the fundamental mode (zero-order). WN solutions are obtained for a special uniformly convergent case. WN analyses are performed to address the dependence of interface profiles, amplitudes of inward-going and outward-going parts, and saturation amplitudes of linear growth of the fundamental mode on the Atwood number, the mode number (m), and the initial perturbation. The difference of WN evolution in cylindrical geometry from that in planar geometry is discussed in some detail. It is shown that interface profiles are determined mainly by the inward and outward motions rather than bubbles and spikes. The amplitudes of inward-going and outward-going parts are strongly dependent on the Atwood number and the initial perturbation. For low-mode perturbations, the linear growth of fundamental mode cannot be saturated by the third-order feedback. For fixed Atwood numbers and initial perturbations, the linear growth of fundamental mode can be saturated with increasing m. The saturation amplitude of linear growth of the fundamental mode is typically 0.2λ–0.6λ for m < 100, with λ being the perturbation wavelength. Thus, it should be included in applications where Bell-Plesset [G. I. Bell, Los Alamos Scientific Laboratory Report No. LA-1321, 1951; M. S. Plesset, J. Appl. Phys. 25, 96 (1954)] converging geometry effects play a pivotal role, such as inertial confinement fusion implosions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Domain configuration changes under electric field-induced antiferroelectric-ferroelectric phase transitions in NaNbO{sub 3}-based ceramics

We recently developed a feasible crystal chemistry strategy to stabilize the antiferroelectricity in NaNbO{sub 3} through a chemical substitution to decrease the tolerance factor and increase the average electronegativity of the system [Shimizu et al., Dalton Trans. 44, 10763 (2015) and Guo et al., J. Appl. Phys. 117, 214103 (2015)]. Two novel lead-free antiferroelectric (AFE) solid solutions, (1-x)NaNbO{sub 3}-xCaZrO{sub 3} and (1-x)NaNbO{sub 3}-xSrZrO{sub 3}, have been found to exhibit the double polarization hysteresis typical of a reversible AFE ↔ ferroelectric (FE) phase transition. In this study, as demonstrated by (1-x)NaNbO{sub 3}-xCaZrO{sub 3} system, the influence of chemical modification and electrical poling on the AFE/FE phase stability was investigated, primarily focusing on the microstructural and crystallographic evolutions. Together with the macroscopic polarization hysteresis measurements, a well-demonstrated structure-property relationship was presented. It was found that the CaZrO{sub 3} substitution into NaNbO{sub 3} can effectively destabilize the FE Q phase and correspondingly lead to a spontaneous reverting to AFE P phase. In contrast to the reversible AFE ↔ FE phase transition, the domain morphology evolution exhibits irreversible nature with a growing process of the orientational domains after applying electric field. Moreover, a multiple-zone axes electron diffraction map of P and Q phases has been summarized and is believed to be an efficient diagram to determine the AFE/FE nature of the NaNbO{sub 3}-based systems.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Initiation of vacuum insulator surface high-voltage flashover with electrons produced by laser illumination

In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗