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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗
NASA NTRS1989

Low temperature measurement of the vapor pressures of planetary molecules

Interpretation of planetary observations and proper modeling of planetary atmospheres are critically upon accurate laboratory data for the chemical and physical properties of the constitutes of the atmospheres. It is important that these data are taken over the appropriate range of parameters such as temperature, pressure, and composition. Availability of accurate, laboratory data for vapor pressures and equilibrium constants of condensed species at low temperatures is essential for photochemical and cloud models of the atmospheres of the outer planets. In the absence of such data, modelers have no choice but to assume values based on an educated guess. In those cases where higher temperature data are available, a standard procedure is to extrapolate these points to the lower temperatures using the Clausius-Clapeyron equation. Last summer the vapor pressures of acetylene (C2H2) hydrogen cyanide (HCN), and cyanoacetylene (HC3N) was measured using two different methods. At the higher temperatures 1 torr and 10 torr capacitance manometers were used. To measure very low pressures, a technique was used which is based on the infrared absorption of thin film (TFIR). This summer the vapor pressure of acetylene was measured the TFIR method. The vapor pressure of hydrogen sulfide (H2S) was measured using capacitance manometers. Results for H2O agree with literature data over the common range of temperature. At the lower temperatures the data lie slightly below the values predicted by extrapolation of the Clausius-Clapeyron equation. Thin film infrared (TFIR) data for acetylene lie significantly below the values predicted by extrapolation. It is hoped to bridge the gap between the low end of the CM data and the upper end of the TFIR data in the future using a new spinning rotor gauge.

Kraus, George F.↗
NASA NTRS1990

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Mcgrath, W. R.↗
NASA NTRS1991

Planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths

Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.

Bishop, W. L.↗
NASA NTRS1991

Performance of NbN superconductive tunnel junctions as SIS mixers at 205 GHz

Small area (less than 1 sq micron), high-current-density NbN/MgO/NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 sq micron and critical current density of 5-10 kA/sq cm are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/sq micron and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 sq microns and critical current density of 18-25 kA/sq cm have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.

Mcgrath, W. R.↗
NASA NTRS1991

Characterization of NbN films and tunnel junctions

Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.

Stern, J. A.↗
NASA NTRS1989

The effects of feedback amplifier characteristics on constant temperature hot-wire anemometer systems

The 3rd-order analysis of Perry and Morrison (1971) was extended to 7th-order by Watmuff (1987) by including both the bridge-capacitance and the frequency-response characteristics of the feedback amplifier. In this paper, the bridge capacitance has been excluded from the analysis. The influence of the gain K, roll-off frequency f(A), and offset voltage E(qi) of the feedback amplifier are examined in more detail together with their interactions with the bridge inductance.

Watmuff, J. H.↗
NASA NTRS1992

Barrier/n/n+ Varactor Frequency Multipliers

Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).

Lieneweg, Udo↗
NASA NTRS1991

Avoiding space robot collisions utilizing the NASA/GSFC tri-mode skin sensor

Sensor based robot motion planning research has primarily focused on mobile robots. Consider, however, the case of a robot manipulator expected to operate autonomously in a dynamic environment where unexpected collisions can occur with many parts of the robot. Only a sensor based system capable of generating collision free paths would be acceptable in such situations. Recently, work in this area has been reported in which a deterministic solution for 2DOF systems has been generated. The arm was sensitized with 'skin' of infra-red sensors. We have proposed a heuristic (potential field based) methodology for redundant robots with large DOF's. The key concepts are solving the path planning problem by cooperating global and local planning modules, the use of complete information from the sensors and partial (but appropriate) information from a world model, representation of objects with hyper-ellipsoids in the world model, and the use of variational planning. We intend to sensitize the robot arm with a 'skin' of capacitive proximity sensors. These sensors were developed at NASA, and are exceptionally suited for the space application. In the first part of the report, we discuss the development and modeling of the capacitive proximity sensor. In the second part we discuss the motion planning algorithm.

Prinz, F. B.↗
NASA NTRS1992

Current flow in a plasma caused by dielectric breakdown

Spacecraft with a thin dielectric coating on the outer surface of the structure which are biased (-200 V) negative relative to the atmospheric plasma are susceptible to dielectric breakdown. This paper will present experimental tests designed to measure the electron current flow from the structure through the plasma during the arc. The current path was examined in three parts: the electrons supplied through the structure and the arc to the outer structure, the expansion of the arc into the ambient plasma, and the return current through the ambient plasma. The measured electron current either flowing from the plasma or supplied to the plasma by the arc in each case was compared to the random thermal electron current which could be collected. The results of the tests show a spacecraft is capable of supporting arcs with peak currents greater than thermal electron currents, and these currents will be dependent upon the amount of stored charge in the structure (i.e., the structure's surface area and dielectric thickness). Also, the results of these tests show that it is possible for structures with a self capacitance of 10 microFarads to see peak currents of 90 A and structures with 1000 microFarads (i.e., capacitance of one Space Station Freedom module) to produce peak currents of 1000 A.

Vaughn, J. A.↗
NASA NTRS1991

Commercial Capaciflector

A capacitive proximity/tactile sensor with unique performance capabilities ('capaciflector' or capacitive reflector) is being developed by NASA/Goddard Space Flight Center (GSFC) for use on robots and payloads in space in the interests of safety, efficiency, and ease of operation. Specifically, this sensor will permit robots and their attached payloads to avoid collisions in space with humans and other objects and to dock these payloads in a cluttered environment. The sensor is simple, robust, and inexpensive to manufacture with obvious and recognized commercial possibilities. Accordingly, NASA/GSFC, in conjunction with industry, is embarking on an effort to 'spin' this technology off into the private sector. This effort includes prototypes aimed at commercial applications. The principles of operation of these prototypes are described along with hardware, software, modelling, and test results. The hardware description includes both the physical sensor in terms of a flexible printed circuit board and the electronic circuitry. The software description will include filtering and detection techniques. The modelling will involve finite element electric field analysis and will underline techniques used for design optimization.

Vranish, John M.↗
NASA NTRS1992

The platinum microelectrode/Nafion interface - An electrochemical impedance spectroscopic analysis of oxygen reduction kinetics and Nafion characteristics

The objectives of this study were to use electrochemical impedance spectroscopy (EIS) to study the oxygen-reduction reaction under lower humidification conditions than previously studied. The EIS technique permits the discrimination of electrode kinetics of oxygen reduction, mass transport of O2 in the membrane, and the electrical characteristics of the membrane. Electrode-kinetic parameters for the oxygen-reduction reaction, corrosion current densities for Pt, and double-layer capacitances were calculated. The production of water due to electrochemical reduction of oxygen greatly influenced the EIS response and the electrode kinetics at the Pt/Nafion interface. From the finite-length Warburg behavior, a measure of the diffusion coefficient of oxygen in Nafion and diffusion-layer thickness was obtained. An analysis of the EIS data in the high-frequency domain yielded membrane and interfacial characteristics such as ionic conductivity of the membrane, membrane grain-boundary capacitance and resistance, and uncompensated resistance.

Parthasarathy, Arvind↗
NASA NTRS1992

A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications

A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG). As a negative voltage is applied to the Schottky contact, the depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. In this paper, we outline the theory, design, fabrication, and evaluation of the new device. Recent results include devices having cutoff frequencies of 1 THz and above. Preliminary multiplier results are also presented.

Peatman, W. C. B.↗
NASA NTRS1992

A new fabrication technique for back-to-back varactor diodes

A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

Smith, R. Peter↗
NASA NTRS1992

Planar doped barrier subharmonic mixers

The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

Lee, T. H.↗
NASA NTRS1992

Novel heterojunction varactors

An account is given of new varactor multiplier designs, for mm-wave and sub-mm-wave receiver systems, which have their bases in heterostructure layers and exhibit either stronger capacitance nonlinearity or a special symmetry of characteristics. While barrier-n-layer-n(+) C-V characteristics yield superior performance at low pump powers, the symmetric C-V characteristics of the single-barrier varactor devices yield efficient low-order harmonic generation. Capacitance nonlinearity in these devices is due to depletion of a semiconductor drift region.

Frerking, Margaret A.↗
NASA NTRS1992

Design and test hardware for a solar array switching unit

This paper describes the control of a pulse width modulated (PWM) type sequential shunt switching unit (SSU) for spacecraft applications. It is found that the solar cell output capacitance has a significant impact on SSU design. Shorting of this cell capacitance by the PWM switch causes input current surges. These surges are minimized by the use of a series filter inductor. The system with a filter is analyzed for ripple and the control to output-voltage transfer function. Stable closed loop design considerations are discussed. The results are supported by modeling and measurements of loop gain and of closed-loop bus impedance on test hardware for NASA's 120 V Earth Observation System (EOS). The analysis and modeling are also applicable to NASA's 160 V Space Station power system.

Patil, A. R.↗
NASA NTRS1992

Broadside-coupled coplanar waveguides and their end-coupled band-pass filter applications

New broadside-coupled coplanar waveguides, suitable for applications requiring wide bandwidths, tight couplings, and large mode effective-dielectric-constant ratios, are presented. Their analysis and investigation are described. Simple equations relating the per-unit-length capacitances of the c- and pi-modes and the per-unit-length capacitance matrices of the coupled structures to those obtained when applying even- and odd-symmetric voltages are also derived. New broadside end-coupled band-pass filters have been developed at X-band (8-12 GHz) with less than 1.5 and 1.0 dB passband insertion losses using the proposed four-ground-plane and two-ground-plane coplanar waveguide structures, respectively. Good agreement between the experimental results and those predicted theoretically was also observed.

Nguyen, Cam↗