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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Demonstrated

Novel transistors and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low-power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. For NASA applications, nanotechnology offers tremendous opportunities for increased onboard data processing, and thus autonomous decisionmaking ability, and novel sensors that detect and respond to environmental stimuli with little oversight requirements. Polyaniline/polyethylene oxide (PANi/PEO) nanofibers are of interest because they have electrical conductivities that can be changed from insulating to metallic by varying the doping levels and conformations of the polymer chain. At the NASA Glenn Research Center, we have observed field effect transistor (FET) behavior in electrospun PANi/PEO nanofibers doped with camphorsulfonic acid. The nanofibers were deposited onto Au electrodes, which had been prepatterned onto oxidized silicon substrates. The preceding scanning electron image shows the device used in the transistor measurements. Saturation channel currents are observed at surprisingly low source/drain voltages (see the following graph). The hole mobility in the depletion regime is 1.4x10(exp -4)sq cm/V sec, whereas the one-dimensional charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx.10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating one-dimensional polymer FET's.

Mueller, Carl H.↗
DOE OSTI2024

Percolative phase transition in few-layered MoSe 2 field-effect transistors using Co and Cr contacts

The metal-to-insulator phase transition (MIT) in two-dimensional (2D) materials under the influence of a gating electric field has revealed interesting electronic behavior and the need for a deeper fundamental understanding of electron transport processes, while attracting much interest in the development of next-generation electronic and optoelectronic devices. Although the mechanism of the MIT in 2D semiconductors is a topic under debate in condensed matter physics, our work demonstrates the tunable percolative phase transition in few-layered MoSe 2 field-effect transistors (FETs) using different metallic contact materials. Here, we attempted to understand the MIT through temperature-dependent electronic transport measurements by tuning the carrier density in a MoSe 2 channel under the influence of an applied gate voltage. In particular, we have examined this phenomenon using the conventional chromium (Cr) and ferromagnetic cobalt (Co) as two metal contacts. For both Cr and Co, our devices demonstrated n-type behavior with a room-temperature field-effect mobility of 16 cm 2 V −1 s −1 for the device with Cr-contacts and 92 cm 2 V −1 s −1 for the device with Co-contacts, respectively. Further, with low temperature measurements at 50 K, the mobilities increased significantly to 65 cm 2 V −1 s −1 for the device with Cr and 394 cm 2 V −1 s −1 for the device with Co-contacts. By fitting our experimental data to the percolative phase transition theory, the temperature-dependent conductivity data show a transition from an insulating-to-metallic behavior at a bias of ∼28 V for Cr-contacts and ∼20 V for Co-contacts. This cross-over of the conductivity can be attributed to an increase in carrier density as a function of the gate bias in temperature-dependent transfer characteristics. By extracting the critical exponents, we find that the transport behavior in the device with Co-contacts aligns closely with the 2D percolation theory. In contrast, the devices with Cr-contacts deviate significantly from the 2D limit at low temperatures.

36 MATERIALS SCIENCE↗
NASA NTRS2009

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗
DOE OSTI2024

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.

42 ENGINEERING↗
DOE OSTI2022

X-Ray Scattering and Electron Microscopy Characterization

This research added to the understanding of p-type activation in GaN vertical transistors for power applications by identifying key defects which inhibit p-type activation. We also developed an approach to eliminate such defects with the appropriate annealing treatments. Additionally we addressed the limitations of GaN substrates used in the production of these devices and exploited the non-uniform distribution of substrate defects to better understand the relationship between device performance and defect density. Through this work, we also established how irregularities – step bunching and haze formation – during epitaxial growth are related to defects in the underlying substrates. Our charter was to work with several other teams to determine connections between defects and performance of GaN-based vertical transistors and have several presentations and publications as well as manuscripts and follow-up collaborations. The research at UCLA supported two full graduate students, one of whom is graduating this summer as well as three undergraduate students.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Intrinsically stretchable neuromorphic devices for on-body processing of health data with artificial intelligence

For leveraging wearable technologies to advance precision medicine, personalized and learning-based analysis of continuously acquired health data is indispensable, for which neuromorphic computing could provide the most efficient implementation of artificial intelligence (AI) data processing. For realizing on-body neuromorphic computing, skin-like stretchability is required, but yet to be combined with the suite of desired neuromorphic metrics, including linear, symmetric weight update, and sufficient state retention, for achieving high computing efficiency. Here, we report an intrinsically stretchable neuromorphic device based on an electrochemical transistor, which provides a large number (>800) of states, linear/symmetric weight update, excellent switching endurance (>100 million), good state retention (>10 4 s), together with high stretchability of 100% strain. Further integration into a prototype array successfully realized the implementation of vector-matrix multiplication even at 100% strain. Finally, we demonstrate the feasibility of implementing AI-based classification of health signals (as exemplified by electrocardiograms) with a high accuracy that is minimally influenced by the stretched state of the neuromorphic hardware. Finally, this work breaks the ground for combining AI data analysis into skin-like wearable electronics for achieving human-integrated/mimetic intelligent systems.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Perovskite Electronic Ratchets for Energy Harvesting

Electronic ratchets are energy-harvesting devices that can utilize spatially asymmetric potential distributions to convert nondirectional/random sources of energy into direct current. The potential asymmetry can be generated in a number of ways, but one purported mechanism is to redistribute ions directly within the active material. Utilizing the known propensity for ion migration in lead-halide perovskites (LHP), the first LHP flashing electronic ratchet is demonstrated by using a voltage stress to intentionally redistribute halide ions within a prototypical 2D perovskite. The resulting asymmetric potential distribution across the 2D perovskite allows for conversion of both electronic noise and unbiased square-wave potentials into current. Furthermore, simultaneous application of light illumination and voltage stress enhances the asymmetric potential distribution, enabling higher current than the nonilluminated device. This work presents an electronic ratchet system that exploits facile ion migration, which can be modified by both electrical and optical stimuli, providing a model system with the potential to test outstanding mechanistic questions for electronic ratchets.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tilted fluctuation electron microscopy

Fluctuation electron microscopy (FEM) is a scanning nanodiffraction-based method that offers a unique approach to characterizing nanometer-scale medium-range order (MRO) in disordered materials. In addition to determining the degree of MRO, careful analysis of scanning nanodiffraction data can also be used to determine strain in thin film amorphous samples. We applied FEM to characterize the strain and MRO of magnetron sputtered amorphous tantalum (a-Ta) thin films over a range of tilt angles from 0° to 45° in order to measure any deviations between the in-plane and out-of-plane strain and MRO. We validate our approach using electron diffraction simulations of FEM experiments for a-Ta. We measure anisotropic strain in the simulated a-Ta diffraction patterns and find that the experimental a-Ta is isotropically strained within the accuracy of our method. Our approach provides a workflow for acquiring tilted scanning nanodiffraction data, determining the relative strain and ordering as a function of in- A nd out-of-plane directions, and removing any artifacts induced in FEM data due to strain. We also describe some limitations of the tilted FEM method when applied to thin films with very low strains.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Machine learning without a processor: Emergent learning in a nonlinear analog network

Standard deep learning algorithms require differentiating large nonlinear networks, a process that is slow and power-hungry. Electronic contrastive local learning networks (CLLNs) offer potentially fast, efficient, and fault-tolerant hardware for analog machine learning, but existing implementations are linear, severely limiting their capabilities. These systems differ significantly from artificial neural networks as well as the brain, so the feasibility and utility of incorporating nonlinear elements have not been explored. Here, we introduce a nonlinear CLLN—an analog electronic network made of self-adjusting nonlinear resistive elements based on transistors. We demonstrate that the system learns tasks unachievable in linear systems, including XOR (exclusive or) and nonlinear regression, without a computer. We find our decentralized system reduces modes of training error in order (mean, slope, curvature), similar to spectral bias in artificial neural networks. The circuitry is robust to damage, retrainable in seconds, and performs learned tasks in microseconds while dissipating only picojoules of energy across each transistor. This suggests enormous potential for fast, low-power computing in edge systems like sensors, robotic controllers, and medical devices, as well as manufacturability at scale for performing and studying emergent learning.

Science & Technology - Other Topics↗
NASA NTRS1973

A new dry biomedical electrode

Electronic circuitry contains new operational amplifier which incorporates monolithic super-gain transistors. Electrode does not provide voltage amplification; instead, it acts as current amplifier to make it possible to pick up electrical potentials from surface of highly resistant dry skin.

Luce, R. S.↗
NASA NTRS1980

The GSFC Mark-2 three band hand-held radiometer

A self-contained, portable, hand-radiometer designed for field usage was constructed and tested. The device, consisting of a hand-held probe containing three sensors and a strap supported electronic module, weighs 4 1/2 kilograms. It is powered by flashlight and transistor radio batteries, utilizes two silicon and one lead sulfide detectors, has three liquid crystal displays, sample and hold radiometric sampling, and its spectral configuration corresponds to LANDSAT-D's thematic mapper bands. The device was designed to support thematic mapper ground-truth data collection efforts and to facilitate 'in situ' ground-based remote sensing studies of natural materials. Prototype instruments were extensively tested under laboratory and field conditions with excellent results.

Tucker, C. J.↗
NASA NTRS1976

Firefighters' Radios

Public Technology Inc. asked for NASA assistance to devise the original firefighter's radio. Good short-range radio communications are essential during a fire to coordinate hose lines, rescue victims, and otherwise increase efficiency. Useful firefighting tool is lower cost, more rugged short range two-way radio. Inductorless electronic circuit replaced inductances and coils in radio circuits with combination of transistors and other low-cost components. Substitution promises reduced circuit size and cost. Enhanced electrical performance made radio more durable and improved maintainability by incorporating modular construction.

Source record↗
NASA NTRS2019

Design of Experiment for the Measurement of Aerosol Droplet Size Distribution of Temperature-Controlled Thermally Atomized Printed Electronic Inks

In-Space Manufacturing (ISM) centers around NASA’s growing need and ability to produce space technologies on demand in space. As the future of long term presence in space and deep space exploration approach, fundamental questions of our dependence on earth resupply to Low Earth Orbit (LEO) remain unanswered. ISM is leading various effort to evaluate the feasibility of producing essential spares and redundant parts on demand to enable a sustainable space-based supply chain model for part resupply. Among the parts and systems being considered, Avionics form the neural network of modern day aircraft and space vehicles providing a wealth of information ranging from Guidance, Navigation, and Control (GN&C) systems to on board Environmental Control and Life Support (ECLS) systems. Recent advances in the use of Aerosol Jet Technology to print Avionics components ranging from electrical traces on a circuit board to complex transistors and sensors raise the possibility of using such technology to reproduce or recreate electronic parts on demand with the help of custom electronics 3D printers. The challenge herein lies within the ability of such printers to generate and deposit an aerosol of electronic material utilizing processes independent of or enhanced by gravity to ensure controllably identical or improved behavior of the aerosol in an International Space Station (ISS) laboratory and on the ground. The behavior as well as the hazards and properties associated with such aerosols in a microgravity environment must be understood well in order to merit a feasible approach to utilizing them for manufacturing in space. In this report, we outline the experimental setup of a modified conventional vaping device to be used as the ideal gravity independent thermal atomization mechanism to generate aerosol. Our objective is to identify the ideal mass, density, and volume of our aerosolized droplets of ink to conclude that there exist a threshold of aerosolized ink droplet sizes that are indeed independent of the effects of gravity and remain stable after atomization. We use a Malvern Spraytec® Spray Particle Size Analyzer to perform real-time laser diffraction measurement of our ink droplets during atomization. The droplet size between conductive ink, dielectric ink and vegetable glycerin have been measured and contrasted. Furthermore, the mechanism of thermal atomization versus traditional pneumatic and ultrasonic atomization for operation in microgravity have been explored.

Wu, Chih-Hao↗
DOE OSTI2020

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

Abstract The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n - and p -channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe 2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe 2 quantum dots, we realize both p - and n -channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2012

Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

Duong, Tuan A.↗
NASA NTRS2006

Sensor Amplifier for the Venus Ground Ambient

Previous Venus Landers employed high temperature pressure vessels, with thermally protected electronics, to achieve successful missions, with a maximum surface lifetime of 127 minutes. Extending the operating range of electronic systems to the temperatures (480 C) and pressures (90 bar) of the Venus ground ambient would significantly increase the science return of future missions. Toward that end, the current work describes the innovative design of a sensor preamplifier, capable of working in the Venus ground ambient and designed using commercial components (thermionic vacuum tubes, wide band gap transistors, thick film resistors, advanced high temperature capacitors, and monometallic interfaces) To identify commercial components and electronic packaging materials that are capable of operation within the specified environment, a series of active devices, passive components, and packaging materials were screened for operability at 500C, assuming a 10x increase in the mission lifetime. In addition. component degradation as a function of time at 500(deg)C was evaluated. Based on the results of these preliminary evaluations, two amplifiers were developed.

Venus electronics↗