Proton radiation effects on carrier transport in diamond radiation detectors
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99 GENERAL AND MISCELLANEOUS↗
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Non-dilute helium-related defect interactions in the near-surface region of plasma-exposed tungsten
We report a systematic energetic analysis of helium-related defect interactions that mediate helium (He) segregation on surfaces of plasma-exposed tungsten at different levels of He ion implantation. We focus on high He fluences that increase the He content in the plasma-exposed material well beyond the dilute limit of He concentration and employ atomic configurations generated by large-scale molecular dynamics simulations of He-implanted tungsten. We perform systematic molecular statics computations of cluster– defect interaction energetics in the highly defect-rich near-surface region of plasma-exposed tungsten for small mobile helium clusters as a function of the cluster distance from the surface. In this region, mobile clusters are also subjected to the stress fields generated by defects such as helium bubbles and other clusters, which govern cluster–defect interactions in addition to the cluster–surface interaction. Based on systematic investigation of individual cluster–defect interactions, we develop a mathematical framework to describe the interaction energy landscapes consisting of elastic interaction potential perturbations to finite-width square-well potentials, where the potential well accounts for cluster trapping by the defect at close range and subsequent coalescence and the perturbation potential is parameterized according to elastic inclusion theory. Superposition of all the relevant interaction potentials provides a comprehensive description of the interaction energy landscape that would be experienced by a small mobile cluster along its migration path toward the plasma-exposed surface at high He fluence. Such descriptions are particularly important for developing atomistically-informed, hierarchical multi-scale models of helium cluster dynamics in plasma-facing materials.
36 MATERIALS SCIENCE↗
Sample test array and recovery (STAR) platform at the National Ignition Facility
We have developed the Sample Test Array and Recovery (STAR) platform for the National Ignition Facility (NIF) for studying the thermal and hydrodynamic responses of materials in extreme environments. The STAR platform expands the range of obtainable fluences and quadruples the rate that materials experiments can be conducted at the NIF. Example configurations are demonstrated for fluences spanning 0.56–34 J/cm 2 with environmental isolation for post-shot material recovery and inspection and up to 1740 J/cm 2 without isolation, with surface heating rates of up to 2 × 10 14 K/s. Lastly, an example experiment involving thermally driven shock and spallation of aluminum alloy 7075 is briefly discussed.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths
Radiation hard diagnostics are critical to the success of nuclear fusion at National Ignition Facility, Z, ITER, and prolonged space explorations. We have first demonstrated the exceptional proton radiation hardness of initial GaN devices and qualified their space flight and deployment for missions such as the Laser Interferometer Space Antenna and International Space Station. We have further conducted neutron radiation hardness experiments at Los Alamos Neutron Science Center by opening a new high fluence beam station. During 2014–2016, we irradiated multiple Aluminum Gallium Nitride (AlGaN) LEDs with a maximum fluence of 2.4 × 1013 neutrons/cm2 in 3 years and generated 54 161 current–voltage (I–V) scan traces. Our data processing program analyzes each and all I–V traces. In addition, we retrieved local temperature records to analyze and remove temperature effects in the outdoor environment. The I–V curve families of AlGaN UV LEDs with emitting wavelengths of 265, 275, and 310 nm were compared. The I–V curves of 265 nm AlGaN UV LEDs have the smallest deviations from the average value, while the I–V curves for 310 nm AlGaN LEDs showed the largest deviations from the average value. We have reached another important recommendation for the optimal use of multiple AlGaN optoelectronic devices or imaging arrays for inertially confined fusion diagnostics: Shorter wavelength devices at 265 nm exhibit more consistent radiation hardness performance than the 310 nm devices. Higher aluminum content LEDs or AlxGa1–xN devices with higher mole fraction x for generating shorter wavelengths have better radiation hardness for fusion diagnostics.
Sun, K. -X. (ORCID:0000000224659235)↗
Propagation of atmospheric pressure plasmas through interconnected pores in dielectric materials
We report the propagation of atmospheric pressure plasmas (APPs) on and through porous dielectric materials is being investigated for plasma-catalysis and functionalizing biomedical materials for tissue scaffolding and bone regeneration. Such plasma functionalization improves wettability and cell attachment, and so uniformity of the treatment of the pore surfaces is important. The method of propagation of APPs through porous media is not well characterized. In this paper, we discuss results from a computational investigation of humid air APPs propagating through short fully interconnected pore-chains in a dielectric substrate. The properties of the dielectric and pores (diameter 150 μm) were chosen to resemble bone scaffolding. We found that photoionization is an important feature in plasma propagation through pore-chains to seed electrons in the following pore in the chain. This seeding of electrons in regions of high electric field allows for the formation of micro-streamers and surface ionization waves. This is particularly important when the openings between pores are small. The orientation of the pore-chain with respect to the applied electric field has a significant impact on plasma generation, mode of propagation, and fluences of short-lived, reactive species to the surfaces of the pores. The uniformity of fluences of charged and short-lived neutral species to the pore surfaces decreases as the angle of the pore chain deviates from being aligned with the applied electric field. Diffusion within pores
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Ultrafast all-optical diffraction switching using semiconductor metasurfaces
Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its “on” and “off” states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated “off”-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order—all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with I on /I off ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Furthermore, both switches exhibit a fast τ tr ≈ 2.7 ps relaxation time at 215 μJ cm -2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Transformations to amorphous and X-type phases in swift heavy ion-irradiated Ln 2 O 3 and Mn 2 O 3
The intense, highly localized electronic excitation resulting from swift heavy ion irradiation induces phase transformations in many materials, including the lanthanide sesquioxides (Ln 2 O 3 ). To explore the effects of chemical composition on radiation-induced transformations, the structural responses of several related sesquioxides to swift heavy ion irradiation were compared. Polycrystalline Nd 2 O 3 , Eu 2 O 3 , Yb 2 O 3 , and Mn 2 O 3 were irradiated by 946 MeV Au ions to a range of ion fluences up to 2 × 10 13 cm -2 , and structural modifications were characterized using beamline-based in situ x-ray diffraction (XRD) and Rietveld refinement. Amorphization was induced in Nd 2 O 3 , Eu 2 O 3 , and Mn 2 O 3 , with the extent of the induced transformation following a clear dependence on cation ionic radius. Nd 2 O 3 and Eu 2 O 3 , having the largest cations, rapidly amorphized, whereas Mn 2 O 3 , having the smallest cation, experienced only a slight loss of crystallinity at the highest fluences studied. The radiation response was different for Yb 2 O 3 , which underwent a sluggish transformation to a nonequilibrium X-type phase. Furthermore, the crystalline-to-amorphous transformations proceeded by direct-impact mechanisms, while the C-to-X transformation proceeded by a multi-impact mechanism.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Thermal activation of low-density Ga implanted in Ge
The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here, we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of the rapid thermal anneal temperature and implant density. We show that for our implant conditions, the activation is best for anneal temperatures between 400 and 650 °C with a maximum activation of 69% at the highest fluence. Below 400 °C, remaining implant damage results in defects that act as superfluous carriers, and above 650 °C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 69% as the implant fluence increased from 6×1010 to 6×1012 cm−2. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.
Foster, Natalie D. (ORCID:0000000235712054)↗
Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors
An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.
Physics↗
Image plate multi-scan response to fusion protons in the range of 1–14 MeV
Image plates (IPs) are a quickly recoverable and reusable radiation detector often used to measure proton and x-ray fluence in laser-driven experiments. Recently, IPs have been used in a proton radiography detector stack on the OMEGA laser, a diagnostic historically implemented with CR-39, or radiochromic film. The IPs used in this and other diagnostics detect charged particles, neutrons, and x-rays indiscriminately. IPs detect radiation using a photo-stimulated luminescence (PSL) material, often phosphor, in which electrons are excited to metastable states by ionizing radiation. Protons at MeV energies deposit energy deeper into the IP compared with x rays below ∼20 keV due to the Bragg peak present for protons. This property is exploited to discriminate between radiation types. Doses of mono-energetic protons between 1.7 and 14 MeV are applied to IPs using the MIT linear electrostatic ion accelerator. This paper presents the results from consecutive scans of IPs irradiated with different proton energies. The PSL ratios between subsequent scans are shown to depend on proton energy, with higher energy protons having lower PSL ratios for each scan. This finding is separate from the known energy dependence in the absolute sensitivity of IPs. The results can be compared to complimentary work on x rays, showing a difference between protons and x rays, forging a path to discriminate between proton and x-ray fluence in mixed radiation environments.
Instruments & Instrumentation↗
Structural characterization of neutron irradiated hexagonal boron-10 nitride-15 single crystals
The negatively charged boron vacancy ($V$$^{–}_{B}$) in hexagonal boron nitride (hBN) is a promising quantum defect that can be used to sense pressure, temperature, and magnetic field with high spatial resolution. hBN enriched with the boron-10 and nitrogen-15 isotopes, denoted h 10 B 15 N, has good contrast and coherence for quantum sensing because nitrogen-15 has nuclear spin (1/2), reducing hyperfine interactions. Boron vacancies can be generated by neutron irradiation, which causes the transmutation of the boron-10 isotope to lithium-7. In this study, the ancillary structural, compositional, and mechanical properties of h 10 B 15 N crystals that have been subjected to neutron irradiation fluences from 1.4 × 10 16 to 8.4 × 10 17 n/cm 2 were thoroughly characterized. Besides creating $V$$^{–}_{B}$, the process also induces other defects that generate strain in the crystal lattice. In turn, the mechanical properties of these crystals change drastically. Investigated here are the visual changes, lattice integrity, composition, crystal strain, and elastic constants (C 33 and C 66 ) to assess how these characteristics change as a function of neutron fluence.
36 MATERIALS SCIENCE↗
Optical fields in porous polylactide matrices
Optical fields induced by laser light inside porous polymer matrices (scaffolds) under stimulating effect on cells are investigated. The spectra of light scattering coefficients and anisotropy factors of porous polylactide scaffolds in the visible and near-IR ranges are determined by numerical simulation based on experimental data obtained using a double integrating sphere. Studies are conducted for dry and wet scaffolds fabricated by supercritical fluid foaming and surface-selective laser sintering. The Monte Carlo method is used to calculate the fluence rate distribution under the assumptions of the Henyey – Greenstein phase scattering function and the model phase function of scattering on spherical cavities. It is shown that th e fluence rate distribution mainly depends on the scattering coefficient and the mean cosine of the deflection angle (g-factor). The results obtained are of great practical importance for tissue engineering based on the use of polymeric porous scaffolds with cells to replace tissue defects; they can be used to determine the dose range for laser stimulation of cells. (paper)
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light
The temporal dynamics of diode-side-pumped Yb – Er laser, with a passive Co{sup 2+} : MgAl{sub 2}O{sub 4} Q switch illuminated by a light beam (total fluence of 0.15 – 0.16 J cm{sup −2}) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔT{sub gi}. The dependence of ΔT{sub gi} on the interval between the instant of switching the illumination module on and the lasing peak position t{sub i} has a minimum at |t{sub i}| ≈ 10 μs. The decrease in ΔT{sub gi} with a change in |t{sub i}| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb – Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |t{sub i}| < 10 μs, the enhanced luminescence fluence in the cavity of Yb – Er laser exceeds 0.16 J cm{sup −2}; the light beam from the module does not affect much the lasing process in the ytterbium – erbium laser; and, as a consequence, the time jitter recovers the initial value. (paper)
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Destruction of absorbing metal films during laser printing with gel microdroplets
The degree of destruction and evaporation of metal films (Au and Ti, thickness ∼50 nm) with a gel layer during laser transfer of small volumes of a gel substrate is estimated depending on the laser fluence value. The dynamics of these processes for dry films and films with a gel layer at fluences close to threshold values is investigated using a probe beam of a He – Ne laser. It is shown that the presence of a gel leads to an increase in the ablation threshold, but the time during which the process of structural changes in the film material is completed does not change significantly. The results obtained can be used to improve the laser bioprinting technology. (interaction of laser radiation with matter)
36 MATERIALS SCIENCE↗
Validation of Light Water Reactor Ex-Core Calculations with VERA
The Consortium for Advanced Simulation of Light Water Reactors (CASL) Virtual Environment for Reactor Applications (VERA) is a reactor simulation software. It offers unique capabilities by combining high-fidelity in-core radiation transport with temperature feedback by using MPACT (a deterministic neutron transport code) and COBRA-TF (a thermal-hydraulic code) with follow-on, fixed-source transport calculations using the Shift Monte Carlo code to calculate ex-core quantities of interest. In these coupled calculations, MPACT provides Shift with the fission source for follow-on ex-core calculations. These ex-core simulations can be set up to calculate detector responses, as well as the flux and fluence in ex-core regions of interest, such as the reactor pressure vessel, nozzle, and irradiated capsules. A Watts Bar Nuclear Plant Unit 1 (WBN1) ex-core model was developed, as described in this paper, and this model was used to perform coupon calculations. The results for the coupon flux calculations show close agreement with the reference values for cycle 1 produced by the two-dimensional Discrete Ordinates Transport (DORT) code and presented in a BWXT Services Inc. report. However, differences in the results (10%) seen in cycles 2 and 3 and the reasons for these differences are discussed in this paper. The VERA WBN1 model was also used to perform a vessel fluence calculation for cycle 1. Additionally, a collaboration between CASL and Duke Energy led to the first code-to-code validation of VERA for reactor ex-core applications that used a model for the Shearon Harris reactor. Results from this collaboration show excellent agreement between VERA and the Monte Carlo N-Particle Transport Code for the detector response calculations. The work performed under this collaboration is also detailed in this paper.
22 GENERAL STUDIES OF NUCLEAR REACTORS↗
Introduction, Investigation, and Experimental Validation of a Novel Passive Neutron Spectrometer
Unfolding neutron energy spectra are instrumental for determining personal health effects and calculating dose received. This area of study is heavily researched, and Lawrence Livermore National Laboratory (LLNL) is investigating a passive neutron spectrometer for the purpose of acquiring the information needed to determine personnel dose in the event of a criticality accident. A part of this investigation is presented in this article through the examination of four experimental detector responses (DRs). These four DRs were acquired in the presence of 252 Cf, AmBe, GODIVA, and National Ignition Facility (NIF) neutron sources. An algorithm developed at LLNL was used to unfold the neutron fluence from each of the four DRs, and subsequently, fluence-to-dose conversion factors provided by the American National Standards Institute were used to calculate dose. Additionally, a multistep unfolding process was developed and employed to calculate the effects of both direct (from the source) and indirect (from room return) neutrons. The average error when unfolding the direct DR was less than 8%. The dose from 252 Cf was predicted with only 8% error. The multistep approach allowed for the identification of the low-energy neutrons in the 252 Cf, AmBe, and NIF DRs.
Nuclear Criticality Safety Program (NCSP)↗
Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing
Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation
Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.
gallium nitride↗