Laser Scribing for Electrode Patterning of Perovskite Spectrometer-Grade CsPbBr 3 Gamma-ray Detectors
Making semiconductor radiation detectors that work at room temperature relies heavily on the deposition and pixelation of electrodes. Electrode patterning of perovskite solar cells widely implements laser scribing techniques, which is a convenient, scalable, and inexpensive technique. However, this method has not found its application in radiation detector patterning yet, and the question whether laser scribing can achieve high-quality patterns with minimum damage to a detector crystal and low interpixel cross-talk remains largely unanswered. To prove that laser scribing is a practical method for electrode patterning on perovskite CsPbBr 3 detectors, we use the material to create a variety of patterns. A very low lateral leakage current (60 nA at 10 V) and high mobility-lifetime product (9.7(3) x 10 -4 cm 2 /V) were observed between the pixel and the guard ring in tests of single-pixel devices with a separation of 200 or 100 μm between the central electrode and the guard ring. The 122 and 136 keV photopeaks in 57 Co gamma-ray spectra were very well resolved with an energy resolution of up to 6.1% at 122 keV. Finally, a further reduction in gap size to 50 mu m is conceivable, but more process optimization is needed.