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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Interfacial tuning of chiral magnetic interactions for large topological Hall effects in LaMnO 3 /SrIrO 3 heterostructures

Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3 d –5 d transition metal-oxide-based LaMnO 3 /SrIrO 3 superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi 2.1 Sr 1.9 CaCu 2.0 O 8 + δ Superconductors

We developed novel techniques to fabricate atomically thin Bi 2.1 Sr 1.9 CaCu 2.0 O 8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature T c close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above T c . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental R xy ( T, B ) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below T c .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Optical spin hall effect in exciton–polariton condensates in lead halide perovskite microcavities

An exciton–polariton condensate is a hybrid light–matter state in the quantum fluid phase. The photonic component endows it with characters of spin, as represented by circular polarization. Spin-polarization can form stochastically for quasi-equilibrium exciton–polariton condensates at parallel momentum vector k|| ∼ 0 from bifurcation or deterministically for propagating condensates at k|| > 0 from the optical spin-Hall effect (OSHE). Here, we report deterministic spin-polarization in exciton–polariton condensates at k|| ∼ 0 in microcavities containing methylammonium lead bromide perovskite (CH3NH3PbBr3) single crystals under non-resonant and linearly polarized excitation. We observe two energetically split condensates with opposite circular polarizations and attribute this observation to the presence of strong birefringence, which introduces a large OSHE at k|| ∼ 0 and pins the condensates in a particular spin state. Such spin-polarized exciton–polariton condensates may serve not only as circularly polarized laser sources but also as effective alternatives to ultracold atom Bose–Einstein condensates in quantum simulators of many-body spin–orbit coupling processes.

Chemistry↗
DOE OSTI2019

Planar Hall Effect in Antiferromagnetic MnTe Thin Films

We show that the spin-orbit coupling (SOC) in α-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Γ. A minimal k·p model is constructed to capture this splitting by group theory analysis, a tight-binding model, and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The PHE originates from the band anisotropy given by SOC, and is quantitatively estimated to be 25%–31% for an ideal thin film with a single antiferromagnetic domain.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Field-induced topological Hall effect and double-fan spin structure with a $c$-axis component in the metallic kagome antiferromagnetic compound YMn 6 Sn 6

Geometric frustration in the kagome lattice makes it a great host for the flat electronic band, nontrivial topological properties, and novel magnetism. In this work, we use magnetotransport measurements to map out the field-temperature phase diagram of the centrosymmetric YMn 6 Sn 6 with a Mn kagome lattice and show that the system exhibits the topological Hall effect (THE) with an in-plane applied magnetic field around 240 K. In addition, our neutron diffraction results demonstrate that the observed THE cannot arise from a magnetic skyrmion lattice, but instead from an in-plane field-induced double-fan spin structure with c-axis components. This paper provides a platform to understand the influence of a field-induced novel magnetic structure on magnetoelectric response in topological kagome metals.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T' structure, namely, 1T'-MX 2 with M = (tungsten or molybdenum) and X = (tellurium, selenium, or sulfur). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T'-MX 2 and two-dimensional dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anomalous Hall effect from inter-superlattice scattering in a noncollinear antiferromagnet

Superlattice formation dictates the physical properties of many materials, including the nature of the ground state in magnetic materials. Chemical composition is commonly considered to be the primary determinant of superlattice identity, especially in intercalation compounds. Nevertheless, in this work, we find that kinetic control of superlattice growth leads to the coexistence of disparate crystallographic domains within a compositionally perfect single crystal. We demonstrate that Cr1/4TaS2 is a noncollinear antiferromagnet in which scattering between majority and minority superlattice domains engenders complex magnetotransport below the Néel temperature, including an anomalous Hall effect. We characterize the magnetic phases in different domains, image their nanoscale morphology, and propose a mechanism for nucleation and growth using a suite of experimental probes coupled with first-principles calculations and symmetry analysis. These results provide a blueprint for the deliberate engineering of macroscopic transport responses via microscopic tuning of magnetic exchange interactions in superlattice domains.

Xie, Lilia S↗
DOE OSTI2022

Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn 3 Sn at room temperature

The magnetic Weyl semimetallic state in the chiral antiferromagnet Mn 3 Sn has attracted interest for its potential in memory technology. Despite vanishingly small magnetization, the material exhibits large transverse responses that can be electrically manipulated, similar to ferromagnets. Through deposition on heated Si/SiO 2 substrates, we have fabricated polycrystalline Mn 3 Sn films that have coarse surfaces, the thinner of which have a discontinuous structure comprised of grains with diameters of the order of 100 nm. Here we confirm that these grains retain the anomalous Hall effect arising in the time reversal symmetry broken chiral antiferromagnetic phase of Mn 3 Sn at room temperature by serially connecting the grains with an additional conducting layer. These results pave the path for the potential applications of nanoscale Mn 3 Sn systems, which could be useful in the development of energy efficient memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Anisotropically large anomalous and topological Hall effect in a kagome magnet

Recently, kagome materials have become an engrossing platform to study the interplay among symmetry, magnetism, topology, and electron correlation. The latest works in RMn6Sn6 (R = rare earth metal) have illustrated that this family could be intriguing to investigate various physical phenomena due to large spin-orbit coupling and strong magnetic ordering. However, combined transport and spectroscopic studies in RMn6Sn6 materials are still limited. Here, we report magnetic, magneto-transport, and angle-resolved photoemission spectroscopy measurements of a kagome magnet ErMn 6 Sn 6 that undergoes antiferromagnetic (T N = 345 K) to ferrimagnetic (T c = 68 K) phase transitions. We observe a large anomalous and topological Hall effect serving as transport signatures of the nontrivial Berry curvature. Our spectroscopic results complemented by theoretical calculations show the multi-orbital kagome fermiology. This work provides new insight into the tunability and interplay of topology and magnetism in a kagome magnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2010

Does the Hall Effect Solve the Flux Pileup Saturation Problem?

It is well known that magnetic flux pileup can significantly speed up the rate of magnetic reconnection in high Lundquist number resistive MHD,allowing reconnection to proceed at a rate which is insensitive to the plasma resistivity over a wide range of Lundquist number. Hence, pileup is a possible solution to the Sweet-Parker time scale problem. Unfortunately, pileup tends to saturate above a critical value of the Lundquist number, S_c, where the value ofS_c depends on initial and boundary conditions, with Sweet-Parker scaling returning above S_c. It has been argued (see Dorelli and Bim [2003] and Dorelli [2003]) that the Hall effect can allow flux pileup to saturate (when the scale of the current sheet approaches ion inertial scale, di) before the reconnection rate begins to stall. However, the resulting saturated reconnection rate, while insensitive to the plasma resistivity, was found to depend strongly on the di. In this presentation, we revisit the problem of magnetic island coalescence (which is a well known example of flux pileup reconnection), addressing the dependence of the maximum coalescence rate on the ratio of di in the "large island" limit in which the following inequality is always satisfied: l_eta di lambda, where I_eta is the resistive diffusion length and lambda is the island wavelength.

Dorelli, John C.↗
DOE OSTI2024

Opto-twistronic Hall effect in a three-dimensional spiral lattice

Studies of moire systems have elucidated the exquisite effect of quantum geometry on the electronic bands and their properties, leading to the discovery of new correlated phases. However, most experimental studies have been confined to a few layers in the 2D limit. The extension of twistronics to its 3D limit, where the twist is extended into the third dimension between adjacent layers, remains underexplored due to the challenges in precisely stacking layers. Here, in this study, we focus on 3D twistronics on a platform of self-assembled spiral superlattice of multilayered WS 2 . Our findings reveal an opto-twistronic Hall effect in the spiral superlattice. This mesoscopic response is an experimental manifestation of the noncommutative geometry that arises when translational symmetry is replaced by a non-symmorphic screw operation. We also discover signatures of altered laws of optical excitation, manifested as an unconventional photon momentum-lattice interaction owing to moire of moire modulations in the 3D twistronic system. Crucially, our findings mark the initial identification of higher-order quantum geometrical tensors in light-matter interactions. This breakthrough opens new avenues for designing quantum materials-based optical lattices with large nonlinearities, paving the way for the development of advanced quantum nanophotonic devices.

Ji, Zhurun↗
DOE OSTI2017

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $\nu=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities $\rho_{yx} = \pm h/e^2$, along with longitudinal resistivities as low as a few ohms. Dissipationless 1D conduction is also expected along magnetic domain walls. Here, we intentionally create a magnetic domain wall in a MTI and study electrical transport along the domain wall. We present the first observation of chiral transport along domain walls, in agreement with theoretical predictions. We present further evidence that two modes equilibrate and co-propagate along the length of the domain wall.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Stripe helical magnetism and two regimes of anomalous Hall effect in NdAlGe

Here, we report the magnetic and electronic transport properties of the inversion and time-reversal symmetry breaking Weyl semimetal NdAlGe. This material is analogous to NdAlSi, whose helical magnetism presents a rare example of a Weyl-mediated collective phenomenon, but with a larger spin-orbit coupling. Our neutron diffraction experiments revealed that NdAlGe, similar to NdAlSi, supports an incommensurate spin density wave (T inc =6.8 K) whose spins are predominantly pointing along the out-of-plane direction and have a small helical spin canting of 3°. The spin density wave has a long wavelength of ≈35 nm and transitions to a commensurate ferrimagnetic state below T com =5.1K. Using small-angle neutron scattering, we showed that the zero-field cooled ferrimagnetic domains form stripes in real space with characteristic length scales of 18 and 72 nm parallel and perpendicular to the [110] direction, respectively. Interestingly, for the transport properties, NdAlSi does not exhibit an anomalous Hall effect (AHE) that is commonly observed in magnetic Weyl semimetals. In contrast to NdAlSi, we identify two different AHE regimes in NdAlGe that are, respectively, governed by intrinsic Berry curvature and extrinsic disorders/spin fluctuations. Our paper suggests that Weyl-mediated magnetism prevails in this group of noncentrosymmetric magnetic Weyl semimetals NdAlX, but transport properties including AHE are affected by material-specific extrinsic effects such as disorders, despite the presence of prominent Berry curvature.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect

An efficient spin-separator that operates in quantum spin hall phase has been investigated for two-dimensional group-IV materials. A three-terminal Y-shaped device has been simulated via non-equilibrium Green Function to demonstrate the separation of unpolarized current at source terminal into spin-polarized current of opposite polarity at the two drain terminals. Device controls, i.e., tunable buckling and perpendicular magnetic field have been modeled comprehensively to evaluate the device feasibility and performance. It is shown that these controls can preferentially steer current between the two drains to create a differential charge current with complementary spin polarization, thus enabling a convenient regulation of output signal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Anomalous bilayer quantum Hall effect

In parallel to the condensed-matter realization of quantum Hall (Chern insulators), quantum spin Hall (topological insulators), and fractional quantum Hall (fractional Chern insulators) effects, we propose that bilayer flat band (FB) lattices with one FB in each layer constitute solid-state analogs of bilayer quantum Hall (BQH) system, leading to anomalous BQH effect without a magnetic field. By exact diagonalization of a bilayer kagome lattice Hamiltonian, as a prototypical example, we demonstrate the stabilization of excitonic condensate Halperin's (1,1,1) state at the total filling v T = 1 of the two FBs. Furthermore, by tuning the interlayer tunneling and distance between the kagome layers at v T = 2/3, we show phase transitions among Halperin's (3,3,0), spin-singlet (1,1,2), and particle-hole conjugate of Laughlin's 1/3 states, as previously observed in conventional BQH systems. Furthermore, our work opens a new direction in the field of FB physics by demonstrating bilayer FB materials as an attractive avenue for realizing exotic anomalous BQH states including non-Abelian anyons.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2015

Quantum anomalous Hall effect and a nontrivial spin-texture in ultra-thin films of magnetic topological insulators

We study the evolution of quantum anomalous Hall (QAH) effect for a Z{sub 2} topological insulator (TI) thin films in a proximity induced magnetic phase by a realistic layered k·p model with interlayer coupling. We examine three different magnetic configurations in which ferromagnetic (FM) layer(s) is added either from one side (FM-TI), from both sides (FM-TI-FM), or homogeneously distributed (magnetically doped) in a TI slab. We map out the thickness-dependent topological phase diagram under various experimental conditions. The critical magnetic exchange energy for the emergence of QAH effect in the latter two cases decreases monotonically with increasing number of quintuple layers (QLs), while it becomes surprisingly independent of the film thickness in the former case. The gap size of the emergent QAH insulator depends on the non-magnetic “parent” gap of the TI thin film and is tuned by the FM exchange energy, opening a versatile possibility to achieve room-temperature QAH insulator in various topological nanomaterials. Finally, we find that the emergent spin-texture in the QAH effect is very unconventional, non-“hedgehog” type; and it exhibits a chiral out-of-plane spin-flip texture within the same valence band which is reminiscent of dynamical “skyrmion” pattern, except our results are in the momentum space.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Analytical theory and possible detection of the ac quantum spin Hall effect

Here, we develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Threshold behaviors of direct and Hall currents in topological spin-Hall effect

Here we study spin-dependent direct and Hall conductivities in the threshold region of Fermi energy, ε F = 2J, where J is the exchange integral between the conduction electron spins and the skyrmion spin texture. For ε F at the threshold value and above the spin-down electrons are allowed to exist. We find the two in the direct and four narrow peaks in the Hall conductivities for Fermi energies slightly below the threshold value. The found effects are dramatic because the electric current changes by approximately eight times in the narrow range of gate voltages (~4 meV). The values of the peaks strongly depend on skyrmion size. For small and very large skyrmion sizes the peak amplitudes are small compared to the conductivity absolute values. At the skyrmion radius a = 6 nm and very light conduction electrons, m* ~ 10 -2 m e , the extrema are the most pronounced. The temperature evolution reveals the strong smearing effect where the peak-wise behavior completely disappears at room temperatures. Spin transistor could be considered for possible applications where in the narrow region of gate voltage the sharp conductivity change occurs.

36 MATERIALS SCIENCE↗