Search NASA⌕ Search

SEARCH · Search NASA

Results for “IRRADIATION DEVICES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications

It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.

Uribe, Roberto M.↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
DOE OSTI2020

COMET/ZEUS Activation Foils Report for Irradiations IER-241 and IER-261

The goal of this work was to determine the internal neutron spectrum of the COMET/ZEUS assembly using activation foils. Similar measurements were performed on the COMET assembly when it was located at the Los Alamos Critical Experiments Facility (LACEF) at the Los Alamos National Laboratory (LANL). The present measurements were performed after the COMET assembly was moved to the National Criticality Experiments Research Center (NCERC) located in the Device Assembly Facility (DAF) at the Nevada National Security Site (NNSS). The December 2012 COMET/ZEUS irradiation was the first in a series of experiments, and the COMET/ZEUS assembly was selected because of operational readiness and authorization to run specific targets. The August 2013 irradiation was the second in the series and involved only small changes in the configuration. This report describes the unfolding of the activation foils to determine the internal neutron spectra.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2025

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗
NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗
DOE OSTI2017

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]

Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10 13 protons/cm 2 . We also characterize the specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V Ga -related), carbon impurities (C-related), and gallium interstitials (Ga i ). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga i . Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga i .

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

A new ultrasonic transducer sample cell for in situ small-angle scattering experiments

Ultrasound irradiation is a commonly used technique for nondestructive diagnostics or targeted destruction. We report on a new versatile sonication device that fits in a variety of standard sample environments for neutron and X-ray scattering instruments. A piezoelectric transducer permits measuring of the time-dependent response of the sample in situ during or after sonication. We use small-angle neutron scattering (SANS) to demonstrate the effect of a time-dependent perturbation on the structure factor of micelles formed from sodium dodecyl sulfate surfactant molecules. We observe a substantial change in the micellar structure during and after exposure to ultrasonic irradiation. We also observe a time-dependent relaxation to the equilibrium values of the unperturbed system. The strength of the perturbation of the structure factor depends systematically on the duration of sonication. The relaxation behavior can be well reproduced after multiple times of sonication. Accumulation of the recorded intensities of the different sonication cycles improves the signal-to-noise ratio and permits reaching very short relaxation times. In addition, we present SANS data for the micellar form factor on alkyl-poly (ethylene oxide) surfactant molecules irradiated by ultrasound. Due to the flexibility of our new in situ sonication device, different experiments can be performed, e.g., to explore molecular potentials in more detail by introducing a systematic time-dependent perturbation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

Pre-conceptual design activities for the materials plasma exposure experiment

The development of next step fusion facilities such as DEMO or a Fusion Nuclear Science Facility (FNSF) requires first closing technology gaps in a few critical areas. Understanding the material-plasma interface is necessary to enable the development of divertors for long-pulse plasma facilities. A pre-conceptual design for a proposed steady-state linear plasma device, the Materials Plasma Exposure Experiment (MPEX), is underway. A helicon plasma source along with ion cyclotron and electron Bernstein wave heating systems will produce ITER divertor relevant plasma conditions with steady-state parallel heat fluxes of up to 40 MW/m 2 with ion fluxes up to 10 24 /m 2 s on target. Current plans are for the device to use superconducting magnets to produce 1–2 T fields. As a steady-state device, active cooling will be required for components that interact with the plasma (targets, limiters, etc.), as well as for other plasma facing components (transport regions, vacuum tanks, diagnostic ports). Design concepts for the vacuum system, the cooling system, and the plasma heating systems have been completed. The device will include the capability for handling samples that have been neutron irradiated in order to consider the multivariate effects of neutrons, plasma, and high heat-flux on the microstructure of divertor candidate materials. A vacuum cask, which can be disconnected from the high field environment in order to perform in-vacuo diagnosis of the surface evolution is also planned for the facility.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas

Gallium oxide (Ga2O3) is a promising ultrawide bandgap semiconductor for radiation detection with the potential of integrating electronic and scintillation functions within a single crystal device. This study establishes the scintillation response of β-Ga2O3 gamma irradiation from yttrium-88 (88Y). Then, californium-252 (252Cf) is used as a spontaneous fission source of mixed neutron and gamma radiation field to measure scintillation signals. Pulse shape discrimination and constant fraction discrimination techniques were used to separate neutron and gamma interaction events. Further investigation indicates that the prompt temporal responses of β-Ga2O3 for gammas and neutrons may enable discrimination of the two by prompt pulse fitting methods, focused around the initial peak. For gamma irradiation, we observed a rise time (τr) of 2.1 ns, decay time (τd) of 9.5 ns, and a full width at half maximum (FWHM) of 6.2 ns. For neutrons, it showed a τr of 2.3 ns, a τd of 12.1 ns, 9.4 ns FWHM, and reduced peak intensity. A diamond detector exhibited a more symmetrical τr and τd for both gamma and neutron signals and therefore is less effective at discriminating between the two by this method. This draws attention to β-Ga2O3’s ability to distinguish neutron and gamma particles. These findings showcase Ga2O3’s potential as a next-generation semiconductor for applications in nuclear safety and medical imaging, where precise discrimination between neutron and gamma interactions is essential.

Valdes, D. J. (ORCID:0000000304373720)↗
NASA NTRS1985

Trends in parts susceptibility to single event upset from heavy ions

New test data have been combined with published data to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. These data have been arranged to exibit the SEU susceptibility of devices by function, technology, and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

Nichols, D. K.↗
NASA NTRS1986

Trends in parts susceptibility to single event upset from heavy ions

New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (ANAHEIM) and IRT have been combined with published data of JPL and Aerospace to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

Nichols, D. K.↗
NASA NTRS2000

Displacement Damage in Bipolar Linear Integrated Circuits

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

Rax, B. G.↗
NASA NTRS2000

Angular dependence of DRAM upset susceptibility

Heavy ion irradiations of two types of commercial DRAMs reveal unexpected angular responses. One device's cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect.

DRAM angle SEU multiple bit upset DRAM upsets↗
DOE OSTI2026

A Mobile Hot Cell for Conditioning Disused Sealed Radioactive Sources for Storage or Transportation

An innovative Mobile Hot Cell (MHC) has been developed for conditioning Disused Sealed Radioactive Sources (DSRS) category 1 and 2 for storage or transportation. The MHC is designed to provide both Radiological and Biological containment with a maximum capacity of 1000 Ci Co60 or 5000Ci Cs137 source and can be transported via standard cargo containers. This project has been supported through the National Nuclear Safety Administration (NNSA) Offsite Source Recovery Program (OSRP). The project is intended for the international community rather than domestic although domestic use is a possibility. Many countries have significant stockpiles of these devices that are often stored in less-than-optimal circumstances. This necessitates that these devices be addressed expeditiously, and the sources secured. The MHC utilizes robotics, automation, and other non-traditional methods for disassembling, characterizing, and packaging these sources that have reached end of life or are otherwise not needed. These innovative approaches are necessary to facilitate an expedited timeline to efficiently and safely secure these sources in a non-proliferation effort. Conditioning efforts include disassembling the device such as a teletherapy head used for cancer treatment, or blood/research irradiators such that the radioactive sources may be removed safely. The sources are then characterized. Leak checks are performed, dimensions are verified, and serial numbers are confirmed. Upon completion, the sources are typically placed into a Standard Forms Capsule which is seal welded closed. It is leak tested and placed into a Long-Term Storage Shield (LTSS) which can either be secured for storage directly or loaded into an appropriate cask for transportation. Further innovations include multiple deployment scenarios that include a full deployment of MHC components, deployment of the MHC automation internal components to an existing hot cell, deployment of minimally required MHC components and incorporation of sand for shielding, and integration of the MHC for Silo Storage, or Bore Hole Storage efforts. The MHC has evolved from a very specific use case to a “Swiss Army Knife” type of a tool in that it can be readily adapted to a large variety of situations. Innovative approaches such as the use of robotics, Computer Numeric Control (CNC) machining centers, automated welding equipment, HDMI Cameras, and LED lighting are some of the developed technologies incorporated into the MHC design. Shielding is accomplished with a steel walled Base Box which is surrounded by four nesting doll shield shells which when combined limits the external dose rate to 5mr/hr when a 1000 Ci Co60 source is exposed inside.

99 - GENERAL AND MISCELLANEOUS↗
DOE OSTI2015

SiC-based neutron detector in quasi-realistic working conditions: efficiency and stability at room and high temperature under fast neutron irradiations

In the framework of the European I SMART project, we have designed and made new SiC-based nuclear radiation detectors able to operate in harsh environments and to detect both fast and thermal neutrons. In this paper, we report experimental results of fast neutron irradiation campaign at high temperature (106 deg. C) in quasi-realistic working conditions. Our device does not suffer from high temperature, and spectra do show strong stability, preserving features. These experiments, as well as others in progress, show the I SMART SiC-based device skills to operate in harsh environments, whereas other materials would strongly suffer from degradation. Work is still demanded to test our device at higher temperatures and to enhance efficiency in order to make our device fully exploitable from an industrial point of view. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Real-Time Identification of Oxygen Vacancy Centers in LiNbO 3 and SrTiO 3 during Irradiation with High Energy Particles

Oxygen vacancies are known to play a central role in the optoelectronic properties of oxide perovskites. A detailed description of the exact mechanisms by which oxygen vacancies govern such properties, however, is still quite incomplete. The unambiguous identification of oxygen vacancies has been a subject of intense discussion. Interest in oxygen vacancies is not purely academic. Precise control of oxygen vacancies has potential technological benefits in optoelectronic devices. In this review paper, we focus our attention on the generation of oxygen vacancies by irradiation with high energy particles. Irradiation constitutes an efficient and reliable strategy to introduce, monitor, and characterize oxygen vacancies. Unfortunately, this technique has been underexploited despite its demonstrated advantages. This review revisits the main experimental results that have been obtained for oxygen vacancy centers (a) under high energy electron irradiation (100 keV–1 MeV) in LiNbO 3 , and (b) during irradiation with high-energy heavy (1–20 MeV) ions in SrTiO 3 . In both cases, the experiments have used real-time and in situ optical detection. Moreover, the present paper discusses the obtained results in relation to present knowledge from both the experimental and theoretical perspectives. Our view is that a consistent picture is now emerging on the structure and relevant optical features (absorption and emission spectra) of these centers. One key aspect of the topic pertains to the generation of self-trapped electrons as small polarons by irradiation of the crystal lattice and their stabilization by oxygen vacancies. What has been learned by observing the interplay between polarons and vacancies has inspired new models for color centers in dielectric crystals, models which represent an advancement from the early models of color centers in alkali halides and simple oxides. The topic discussed in this review is particularly useful to better understand the complex effects of different types of radiation on the defect structure of those materials, therefore providing relevant clues for nuclear engineering applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Integrating HPC simulations and physical experiments to characterize the effects of gamma radiation on seismic protective devices

Seismic protective systems, composed of seismic isolators and dampers, can substantially reduce the effects of earthquake shaking on nuclear power plants and components therein. To enable the use of these devices to protect equipment inside a plant and close to a source of radiation, the U.S. Department of Energy (DOE) funded a project at the Idaho National Laboratory (INL) and the University at Buffalo to characterize the effects of absorbed gamma dose on their mechanical properties. An early task in the project was to determine the exposure time required in the INL Foss Therapy Services (FTS) 60 Co gamma irradiator to achieve a target absorbed dose in the materials used to construct isolators and dampers, including fluids, polymers, composites, and metals. This task required the novel integration of high-performance computing (HPC), Monte Carlo N-Particle (MCNP) simulations, and irradiation experiments using Fricke dosimetry. An MCNP model of the FTS irradiator at INL was developed and validated using Fricke dosimetry. Simulations of three experiments in the irradiator, two with Fricke vials only and one with Fricke vials and a large-size isolator, predicted the Fricke-measured absorbed dose rate to within 15% in all three cases, providing high confidence in the calculation of the gamma dose absorbed in the materials comprising the seismic protective devices. The simulations demonstrated that the effects of photon scattering on absorbed dose rate in the FTS irradiator are negligible for test articles installed close to the cobalt sources and near the rear of the irradiator. The validated MCNP model of the FTS irradiator is being used to support ongoing DOE-funded experiments on seismic protective devices and could be applied to future, non-seismic-related experiments. In conclusion, the novel validation process successfully deployed for the FTS irradiator at INL could be applied to other irradiators, requiring new MCNP models and simulations, and irradiation experiments using dosimeters.

42 - ENGINEERING↗