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At least 469 records · Page 26

HZE particle radiation induces tissue-specific and p53-dependent mutagenesis in transgenic animals

Transgenic animals, with the integrated target gene, provide a unique approach for measuring and characterizing mutations in any tissue of the animal. We are using the plasmid-based lacZ transgenic mice with different p53 genetic background to examine radiation-induced genetic damage resulting from exposure to heavy particle radiation. We measured lacZ mutation frequencies (MF) in the brain and spleen tissues at various times after exposing animals to an acute dose of 1 Gy of 1GeV/amu iron particles. MF in the spleen of p53+/+ animals increased up to 2.6-fold above spontaneous levels at 8 weeks post irradiation. In contrast, brain MF from the same animals increased 1.7-fold above controls in the same period. In the p53-/- animals, brain MF increased to 2.2-fold above spontaneous levels at 1 week after treatment, but returned to control levels thereafter. Radiation also induced alterations in the spectrum of mutants in both tissues, accompanied by changes in the frequency of mutants with deletions extending past the transgene into mouse genomic DNA. Our results indicate that the accumulation of transgene MF after radiation exposure is dependant on the tissue examined as well as the p53 genetic background of the animals.

Non-NASA Center↗

A Bi-Exponential Repair Algorithm for Radiation-Induced Double-Strand Breaks: Application to Chromosome Aberrations

Chromosome aberrations (CAs) are one of the effects of radiation exposure and are used as a biomarker. A new simulation program, named RITCARD (Radiation induced tracks, chromosome aberrations, repair, and damage) was developed to simulate radiation-induced CA. RITCARD is used with the program RITRACKS (Relativistic Ion Tracks), which simulates the radiation tracks. The restitution kinetics algorithm presented here is a significant improvement over the one used in the first version. Simulations of radiation-induced CA were performed for several ion types and mixed irradiation fields. These simulations will be useful to help interpreting experiments of galactic cosmic rays (GCR) simulator.

Plante, Ianik↗

Transcriptomic Changes in Seedlings from Seeds Exposed to Simulated Space Radiation

Outside the protection of Earth’s magnetic field, living organisms are constantly exposed to space radiation that consists of energetic protons and other heavier charged particles. With the goal of manned Mars exploration, the production of fresh crop during long duration space missions can be beneficial for meeting astronauts’ nutritional and psychological needs. In our study, we not only evaluated plant/fruit morphometrics and edible fresh mass, but also analyzed transcriptomic changes in seedlings from seeds of three plant species (Arabidopsis, mizuna, and tomato) exposed to simulated Galactic Cosmic Rays(GCR) and solar particle events(SPE). The radiation experiments were performed in the NASA Space Radiation Laboratory (NSRL) facility at Brookhaven National Lab (BNL). 10-day Arabidopsis seedlings were exposed acutely (~240 cGy/hr) to simulated GCR scenarios of combined ions including protons, helium, oxygen, titanium, and/or iron ions at 40 or 80 cGy. Seeds of Arabidopsis, mizuna, and tomato were exposed to 40 or 80 cGy simulated GCR (dry seeds) or SPE (imbibed seeds) at lower dose rates(20-26 cGy/hr). Seedlings from control and irradiated seeds were then collected in RNAlater at similar growth stages with true leaves emerged. Total RNA was isolated and analyzed via Illumina whole transcriptome sequencing technology. Plant species-specific bioinformatics revealed transcriptional biomarkers and signaling pathways induced by simulated space radiation that were found to be dose, dose-rate, and species dependent. DNA damage response, stress signaling, and metabolic pathways are among the most significant changes. These data highlight some critical insights on the mechanisms of how plants respond and adapt to the space radiation environment and provide a molecular basis for crop selection and refinement in deep space exploration.

Anirudha Dixit↗

Defect behavior in electron-irradiated boron- and gallium-doped silicon

Production and anneal of defects in electron-irradiated, float-zone silicon solar cells were studied by DLTS. In boron- and gallium-doped, n+-p cells, dominant defects were due to the divacancy, carbon interstitial, and carbon complex. Results suggest that the DLTS peak normally ascribed to carbon complexes also involves gallium. For gallium- and, to a lesser extent, boron-doped samples, damaged lifetime shows substantial recovery only when the carbon-complex peak has annealed out at 400 C. In boron-doped, n+-p-p+ cells, a minority carrier trap (E1) was also observed by DLTS in cells with a boron p+, but not in those with an aluminum p+ back. A level at Ev + 0.31 eV appeared upon 150 C annealing (E1 out) in both p+ back types of samples.

Drevinsky, P. J.↗

Correlation of Radiation Dosage With Mechanical Properties of Thin Films

The objective of this investigation was to examine the relationship between irradiation level (proton dose), microstructure, and stress levels in chemical vapor deposited diamond and polysilicon film using crosssectioned specimens. However, the emphasis was placed on the diamond specimen because diamond holds much promise for use in advanced technologies. The use of protons allows not only the study of the charged particle that may cause the most microstructural damage in Earth-orbit microelectromechanical systems (MEMS) devices, but also allows the study of relatively deeply buried damage inside the diamond material. Using protons allows these studies without having to resort to megaelectronvolt implant energies that may create extensive damage due to the high energy that is needed for the implantation process. Since 1 MEMS devices operating in space will not have an opportunity to reverse radiation damage via annealing, only nonannealed specimens were investigated. The following three high spatial resolution techniques were used to examine these relationships: (I) Scanning electron microscopy, (2) micro-Raman spectroscopy, and (3) micro x-ray diffraction.

Newton, R. L.↗

UV testing of INTELSAT-7, 7A, and 8 solar cells

A 4000 hour experiment, conducted in late 1992 through mid 1993, confirmed earlier results on the ultraviolet damage effects in covered solar cells of various types being used, or proposed for use, in INTELSAT programs. Two different UV test systems were used to identify systematic errors and to study the effects of UV source-bulb age on degradation rate. After correction for contamination and UV source-bulb aging, the extrapolated degradation rates for irradiated and unirradiated INTELSAT-5, -6 single AR(SAR) coated cells and INTELSAT-7, -7A, -8 double layer AR(DAR) coated cells in both the 1993 tests confirm the following hypotheses resulting from the 1992 experiment. (a) Irradiated cells display significantly more UV degradation than do the unirradiated cells for tests exceeding 2000 hours. The new data indicates that degradation effects from electron irradiation are proportional to t(exp 2) (the square of the UV hours), at least for times less than or equal to 3000 hours. (b) This difference does not depend upon entire reflective coating, cell resistivity, or manufacturer within the sensitivity and reproducibility of the experiment. (c) There is a clear difference in degradation rate between single AR coated cells (TiO(x)) and double layer AR coated cells (SiO(x) and Al2O3?). At 100,000 hours (11.4 years) the DAR coated cells display more degradation than do the SAR coated cells, even though at 1,000 hours the DAR cells display less degradation. (d) UV degradation rates, to modern covered silicon solar cells, at the beginning of bulb life drop from approximately 2 times the average rate to near zero after 2000 hours (average end-of-life for the xenon short-arc lamps used in the tests). The effects of 1 MeV electron irradiation (10(exp 15) e(-)/sq cm) prior to UV exposure are clearly indicated in the plot of percent change in cell open circuit voltage (Voc) versus percent change in short circuit current (Isc) during the UV test and post-test cleanup of the cells. Clearly, extended UV testing produces a permanent photo-induced redegradation of previously irradiated cells. However, this photo-induced redegradation may be caused by the long-wavelength light, not the UV light.

Meulenberg, A.↗

Transforming growth factor-beta1 mediates cellular response to DNA damage in situ

Transforming growth factor (TGF)-beta1 is rapidly activated after ionizing radiation, but its specific role in cellular responses to DNA damage is not known. Here we use Tgfbeta1 knockout mice to show that radiation-induced apoptotic response is TGF-beta1 dependent in the mammary epithelium, and that both apoptosis and inhibition of proliferation in response to DNA damage decrease as a function of TGF-beta1 gene dose in embryonic epithelial tissues. Because apoptosis in these tissues has been shown previously to be p53 dependent, we then examined p53 protein activation. TGF-beta1 depletion, by either gene knockout or by using TGF-beta neutralizing antibodies, resulted in decreased p53 Ser-18 phosphorylation in irradiated mammary gland. These data indicate that TGF-beta1 is essential for rapid p53-mediated cellular responses that mediate cell fate decisions in situ.

Non-NASA Center↗

Monte-Carlo Simulation of Radiation Track Structure and Calculation of Dose Deposition in Nanovolumes

INTRODUCTION: The radiation track structure is of crucial importance to understand radiation damage to molecules and subsequent biological effects. Of a particular importance in radiobiology is the induction of double-strand breaks (DSBs) by ionizing radiation, which are caused by clusters of lesions in DNA, and oxidative damage to cellular constituents leading to aberrant signaling cascades. DSB can be visualized within cell nuclei with gamma-H2AX experiments. MATERIAL AND METHODS: In DSB induction models, the DSB probability is usually calculated by the local dose obtained from a radial dose profile of HZE tracks. In this work, the local dose imparted by HZE ions is calculated directly from the 3D Monte-Carlo simulation code RITRACKS. A cubic volume of 5 micron edge (Figure 1) is irradiated by a (Fe26+)-56 ion of 1 GeV/amu (LET approx.150 keV/micron) and by a fluence of 450 H+ ions, 300 MeV/amu (LET approx. 0.3 keV/micron). In both cases, the dose deposited in the volume is approx.1 Gy. The dose is then calculated into each 3D pixels (voxels) of 20 nm edge and visualized in 3D. RESULTS AND DISCUSSION: The dose is deposited uniformly in the volume by the H+ ions. The voxels which receive a high dose (orange) corresponds to electron track ends. The dose is deposited differently by the 56Fe26+ ion. Very high dose (red) is deposited in voxels with direct ion traversal. Voxels with electron track ends (orange) are also found distributed around the path of the track. In both cases, the appearance of the dose distribution looks very similar to DSBs seen in gammaH2AX experiments, particularly when the visualization threshold is applied. CONCLUSION: The refinement of the dose calculation to the nanometer scale has revealed important differences in the energy deposition between high- and low-LET ions. Voxels of very high dose are only found in the path of high-LET ions. Interestingly, experiments have shown that DSB induced by high-LET radiation are more difficult to repair. Therefore, this new approach may be useful to understand the nature of DSB and oxidative damage induced by ionizing radiation.

Plante, I.↗

Spectral reflectance change and luminescence of selected salts during 2-10 KeV proton bombardment - Implications for Io

Radiation damage and luminescence caused by magnetospheric charged particles have been suggested by several investigators as mechanisms that are capable of explaining some of the peculiar spectral/albedo features of Io. In the present paper, this possibility is pursued by measuring the UV-visual spectral reflectance and luminescent efficiency of several proposed Io surface constituents during 2 to 10 keV proton irradiation at room and low temperatures. The luminescence efficiencies of pure samples, studied in the laboratory, suggest that charged-particle induced luminescence from Io's surface might be observable by spacecraft such as Voyager when viewing Io's dark side.

Nelson, R. M.↗

Processing and characterization of high-efficiency

Silicon solar cells with efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high efficiency terrestrial solar cells. Preliminary results indicate that the high efficiency cell is more susceptible to radiation damage in that it retains a smaller proportion of its original power output when compared to conventional space cells after exposure to 5 times 10 to the 14th power 1 MeV electrons. However, the cell does maintain a greater overall power output than the conventional cells to which it was compared. Furthermore, this cell does not demonstrate post-electron irradiation photon decay as has been described for cells processed on 1-10 ohm-cm float zone silicon.

Crotty, G. T.↗

Extrapolation of space weathering processes to other small solar system bodies

A diverse range of processes were invoked as the dominant factor or as important contributory factors in the modification of the optical surface and regolith of the moon. These include impact vitrification by large and small projectiles, solar wind implantation and the reduction of oxidized iron during energetic events, sputtering and crystal lattice damage by energetic cosmic rays, shock metamorphism of minerals, mixing of diverse lithologies by impacts, and contamination by external materials. These processes are also potentially important on the rocky surfaces of other small solar system bodies. For icy bodies, several additional processes are also possible, including formation of complex organic compounds from methane and ammonia-bearing ices by ultraviolet irradiation and the condensation of vapor species to form frost layers in the polar or cooler regions of objects at appropriate heliocentric distances. The lunar case, even when completely understood, will not extend in a simple linear fashion to other small rocky objects, nor will the optical surfaces of those objects all be affected to the same degree by each process. The major factors that will control the relative efficacy of a possible mechanism include the efficiency of ejecta retention and the degree to which the regolith materials experience multiple events (primarily a function of body size, escape velocity, and impactor velocities); the mean duration of typical regolith particle exposure at the optical surface and within reach of the micrometeorite, cosmic ray, solar wind, or UV fluxes (a function of the rate and scale of regolith mixing, production, and removal processes); the incident flux of solar (low energy) cosmic rays, solar wind, or UV radiation (inverse square of heliocentric distance) or of galactic (high energy) cosmic rays (slowly increasing flux with heliocentric distance); and the compositional and mineralogical nature of the surface being affected. In general, those processes that depend upon either the retention of impact ejecta or on the presence of multigenerational regoliths should be substantially less effective on smaller bodies with lower escape velocities. However, there are important exceptions to this generalization. For example, a process that involves the hypervelocity impact of small particles into a fine-grained regolith may be able to effectively retain highly shocked or melted material due to the nature of shock wave propagation in such a heterogeneous material.

Gaffey, M. J.↗

Improved spatial uniformity of beam-plane interaction by means of inverse rastering

An analysis is presented that shows the desirability and feasibility of conducting irradiations of large test objects by beams of penetrating radiation, by the method of moving the test object back and forth through the beam, rather than by sweeping the beam across the object. An extension of this method of inverse rastering allows the generation of composite beams with any desired intensity-vs-energy spectrum, obviating the need to determine equivalent damage factors for every energy in the spectrum.

Miller, C. G.↗

Effect of lunar surface material on radiation damage in mice (investigation of biological action of lunar surface material returned to earth by Luna 16 automatic station)

The effect was studied of lunar surface material from the Sea of Fertility on the radiation reaction (damage) in mice caused by exposure to ionizing radiation. The material was administered to the organism in three ways -- aerogenically, through the esophagus, or peritoneally. It was shown that administering the lunar surface material did not appreciably affect the death of the animals and the reaction of the peripheral blood caused by the action of radiation. In mice which prior to irradiation had been administered inhalationally or peritoneally the lunar surface material, a lag in the increment of bodyweight was observed.

Antipov, V. V.↗

Stochastic Effects in Computational Biology of Space Radiation Cancer Risk

Estimating risk from space radiation poses important questions on the radiobiology of protons and heavy ions. We are considering systems biology models to study radiation induced repair foci (RIRF) at low doses, in which less than one-track on average transverses the cell, and the subsequent DNA damage processing and signal transduction events. Computational approaches for describing protein regulatory networks coupled to DNA and oxidative damage sites include systems of differential equations, stochastic equations, and Monte-Carlo simulations. We review recent developments in the mathematical description of protein regulatory networks and possible approaches to radiation effects simulation. These include robustness, which states that regulatory networks maintain their functions against external and internal perturbations due to compensating properties of redundancy and molecular feedback controls, and modularity, which leads to general theorems for considering molecules that interact through a regulatory mechanism without exchange of matter leading to a block diagonal reduction of the connecting pathways. Identifying rate-limiting steps, robustness, and modularity in pathways perturbed by radiation damage are shown to be valid techniques for reducing large molecular systems to realistic computer simulations. Other techniques studied are the use of steady-state analysis, and the introduction of composite molecules or rate-constants to represent small collections of reactants. Applications of these techniques to describe spatial and temporal distributions of RIRF and cell populations following low dose irradiation are described.

Cucinotta, Francis A.↗

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗

Radiation Damage Effects in Far Ultraviolet Filters and Substrates

New advances in VUV thin film filter technology have been made using filter designs with multilayers of materials such as Al2O3, BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2. Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 X 9 R(sub E) orbit will expose the instrument to approximately 275 krads of radiation. In view of the fact that no previous studies have been made on potential radiation damage of these materials in the thin film format, we report on such an assessment here. Transmittances and reflectances of BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2 thin films on MgF2 substrates, Al2O3 thin films on fused silica substrates, uncoated fused silica and MgF2, and four multilayer filters made from these materials were measured from 120 nm to 180 nm before and after irradiation by 250 krads from a Co-60 gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 nm to 300 nm indicated a 3 - 5% radiation-induced absorption near 260 nm in some of the samples with MgF2 substrates. From these measurements it is concluded that far ultraviolet filters made from the materials tested should experience less that 5% change from exposure to up to 250 krads of high energy radiation in space applications.

Keffer, Charles E.↗

Displacement Damage in Bipolar Linear Integrated Circuits

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

Rax, B. G.↗

Damage to the photoreceptor cells of the rabbit retina from 56Fe ions: effect of age at exposure, 1

Optic and proximate tissues of New Zealand white (NZW) rabbits at ages (approximately 3.5 years) near the middle of their median lifespan (5-7 years) were given 0.5-3.5 Gy of 465 MeV u-1 56Fe ions in the Bragg plateau region of energy deposition at a linear energy transfer (LET infinity) of 220 +/- 31 keV micrometer-1. Dose-dependent losses of retinal photoreceptor cells (rods) occurred until 1-2 years after irradiation, the period of this interim report. Similar cumulative losses of photoreceptor cells were seen during the period 1-2 years post-irradiation for rabbits given comparable exposures when young (6-9 weeks old). Since losses of photoreceptor cells at early times had not been determined previously, the current experiment, which was designed to simulate the responses of mature astronauts, redressed that deficiency.

NASA Program NSCORT↗