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Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Crystal orientation dependence of interfacial magnetic anisotropy at heavy-metal/magnetic-garnet interfaces

Ferrimagnetic insulators capped with a heavy metal are becoming an increasingly interesting materials system in spintronics due to their unique ability for electrical manipulation and detection of magnetic states and spin textures via spin-orbit torques. The ability to engineer magnetic anisotropy is a powerful tool for tuning the recently discovered phenomena in these bilayers such as electrical switching or the stabilization of topological magnetic textures. Here, we observe large shifts in the magnetic anisotropy in Tm 3 Fe 5 O 13 and Y 3 Fe 5 O 12 thin films due to heavy-metal capping layers, which strongly depends on the orientation of the substrate and therefore the orientation of the epitaxial films. This work suggests large Rashba spin-orbit coupling at the metal/ferrimagneticinsulator interface, which can be engineered in spintronic devices that utilize spin-orbit torques for electrical control of the magnetization in magnetic insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Intricate Magnetic Landscape in Antiferromagnetic Kagome Metal TbTi 3 Bi 4 and Interplay with Ln 2– x Ti 6+ x Bi 9 (Ln: Tb···Lu) Shurikagome Metals

Here we present the discovery and characterization of the kagome metal TbTi 3 Bi 4 in tandem with a new series of compounds, the Ln 2–x Ti 6+x Bi 9 (Ln: Tb–Lu) shurikagome metals. We previously reported on the growth of the LnTi 3 Bi 4 (Ln: La–Gd 3+ , Eu 2+ , Yb 2+ ) family, a chemically diverse and exfoliable series of kagome metals with complex and highly anisotropic magnetism. However, unlike the La–Gd analogs, TbTi 3 Bi 4 cannot be synthesized by our previous methodology due to phase competition with crystals of Ln 2–x Ti 6+x Bi 9 (x ~ 1.7–1.2). Here we discuss the phase competition between the LnTi 3 Bi 4 and Ln 2–x Ti 6+x Bi 9 families, helping to frame the difficulty in synthesizing LnTi 3 Bi 4 compounds with small Ln species and providing a strategy to circumvent the formation of Ln 2–x Ti 6+x Bi 9 . Detailed characterization of the magnetic and electronic transport properties on single crystals of TbTi 3 Bi 4 reveals a highly complex landscape of magnetic phases arising from an antiferromagnetic ground state. A series of metamagnetic transitions creates at least 5 unique magnetic phase pockets, including a 1/3 and 2/3 magnetization plateau. Further, the system exhibits an intimate connection between the magnetism and magnetotransport, exhibiting sharp switching from positive (+40%) to negative magnetoresistance (–50%). Like the LnTi 3 Bi 4 kagome metals, the Ln 2–x Ti 6+x Bi 9 family exhibits quasi-2D networks of titanium and chains of rare earth. Finally, we present the structures and some basic magnetic properties of the Ln 2–x Ti 6+x Bi 9 family alongside our characterization of the newly discovered TbTi 3 Bi 4 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Positive spin Hall magnetoresistance in single-crystalline Pt/CoO(001) bilayers

Here, the spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Néel order or the applied strong field effect. Both SMR components show a “positive” angular dependence with $R_{∥} > R_{⊥}$, while $R_{∥} (R_{⊥})$ is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Spin Waves and Magnetic Exchange Hamiltonian in CrSBr

Abstract CrSBr is an air‐stable two‐dimensional (2D) van der Waals semiconducting magnet with great technological promise, but its atomic‐scale magnetic interactions—crucial information for high‐frequency switching—are poorly understood. An experimental study is presented to determine the CrSBr magnetic exchange Hamiltonian and bulk magnon spectrum. The A ‐type antiferromagnetic order using single crystal neutron diffraction is confirmed here. The magnon dispersions are also measured using inelastic neutron scattering and rigorously fit the excitation modes to a spin wave model. The magnon spectrum is well described by an intra‐plane ferromagnetic Heisenberg exchange model with seven nearest in‐plane exchanges. This fitted exchange Hamiltonian enables theoretical predictions of CrSBr behavior: as one example, the fitted Hamiltonian is used to predict the presence of chiral magnon edge modes with a spin‐orbit enhanced CrSBr heterostructure.

2D materials↗
DOE OSTI2019

Stability Diagrams of a Tunnel Nanoheterostructure in the Free-Electron Approximation

One of important characteristics of a magnetic tunneling junction (MTJ) nanoheterostructure that is used as magnetic random access memory (MRAM) cell and is switched by the spin transfer torque (STT) effect is its stability diagram, which determines the range of values of the external magnetic field and applied voltage under which a cell is in one of two stable states. To numerically construct such diagrams, one usually uses the solution of the Landau–Lifshitz dynamic equation in the single-domain approximation along with phenomenological constants that determine the values of spin torque in the material. In the present paper, the problem of spin-dependent electron transfer in an MTJ structure is considered, whose solution in the free-electron approximation allows one to calculate the values of spin torque for a given material in any magnetic configuration of the system and apply them to the integration of the Landau–Lifshitz equation. The method used allows one to more precisely reproduce the shape of the stability diagram and predict the critical values of the magnetic field and voltage necessary to switch an MTJ-based MRAM cell.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Low voltage drop, cross-field, gas switch and method of operation

A gas switch includes an anode and a cathode spaced apart from the anode, wherein the cathode includes a conduction surface. The gas switch also includes a plurality of magnets arranged to generate a magnetic field that defines an annular path over a portion of the conduction surface at a radial distance from a switch axis, and a control grid positioned between the anode and the cathode. In operation, the control grid is arranged to establish a conducting plasma between the anode and the cathode, wherein, in the presence of the conducting plasma, a voltage drop between the anode and the cathode is less than 150 volts, and wherein the conducting plasma forms a cathode spot that circles the annular path.

42 ENGINEERING↗
DOE OSTI2016

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors and tunable radio frequency (RF)/microwave devices.

42 ENGINEERING↗
DOE OSTI2018

Electrical control of 2D magnetism in bilayer CrI 3

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction. Owing to their unique magnetic properties, the recently reported two-dimensional magnets provide a new system for studying these features. For instance, a bilayer of chromium triiodide (CrI 3 ) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Here, our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Eigenvalue-Based Micromagnetic Analysis of Switching in Spin-Torque-Driven Structures

We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin-transfer torque and spin-orbit torque. The approach represents the system dynamics in terms of normal oscillation modes (eigenstates) with corresponding complex eigenfrequencies. The dynamics is driven by a small number of active eigenstates and often considering just a single eigenstate is sufficient. We develop a perturbation theory that provides semianalytical dynamic solutions by using eigenstates for the case in the absence of damping and spintronic excitations as a basis. The approach provides useful insights into dynamics in such systems and allows solving several difficulties in their modeling, such as extracting the switching current in magnetic random-access memories and understanding switching mechanisms. We show that the presented approach directly predicts the critical switching current, i.e., switching current for an infinite time. The approach also provides solutions for the switching dynamics allowing the switching current to be obtained for a finite switching time, provided that the system symmetry is broken, e.g., by tilting the polarizer, so that switching by a finite pulse is possible.

42 ENGINEERING↗
DOE OSTI2021

Stimulated Nucleation of Skyrmions in a Centrosymmetric Magnet

Understanding the dynamics of skyrmion nucleation and manipulation is important for applications in spintronic devices. In this contribution, the spin textures at magnetic domain-boundaries stimulated by application of in-plane magnetic fields in a centrosymmetric kagome ferromagnet, Fe 3 Sn 2 , with thickness gradient are investigated using Lorentz transmission electron microscopy. Switching of the in-plane magnetic field is shown to induce a reversible transformation from magnetic stripes to skyrmions, or vice versa, at the interface between differently oriented domains. Micromagnetic simulations combined with experiments reveal that the rotatable anisotropy and thickness dependence of the response to the external in-plane field are the critical factors for the skyrmion formation. In addition, it is shown that the helicity of skyrmions can also be controlled using this dynamic process. Finally, the results suggest that magnetic materials with rotatable anisotropy are potential skyrmionic systems and provides a different approach for nucleation and manipulation of skyrmions in spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition

We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Competing magnetic phases and itinerant magnetic frustration in SrCo 2 As 2

Whereas magnetic frustration is usually associated with local-moment magnets in special geometric arrangements, here we show that SrCo 2 As 2 is a candidate for frustrated itinerant magnetism. Using inelastic neutron scattering (INS), we determine that antiferromagnetic (AF) spin fluctuations develop in the square Co layers of SrCo 2 As 2 below T ≈ 100 K centered at the stripe-type AF propagation vector of ($\frac{1}{2}$, $\frac{1}{2}$), and that their development is concomitant with a suppression of the uniform magnetic susceptibility determined via magnetization measurements. We interpret this switch in spectral weight as signaling a temperature-induced crossover from an instability towards FM ordering to an instability towards stripe-type AF ordering on cooling, and show findings from Monte-Carlo simulations for a J 1 -J 2 Heisenberg model that illustrate how the crossover develops as a function of the frustration ratio –J 1 /(2J 2 ). By putting our INS data on an absolute scale, we quantitatively compare them and our magnetization data to exact-diagonalization calculations for the J 1 -J 2 model [N. Shannon et al., Eur. Phys. J. B 38, 599 (2004)], and show that the calculations predict a lower level of magnetic frustration than indicated by experiment. We trace this discrepancy to the large energy scale of the fluctuations (J avg ≳ 75 meV), which, in addition to the steep dispersion, is more characteristic of itinerant magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Programmable Ultralight Magnets via Orientational Arrangement of Ferromagnetic Nanoparticles within Aerogel Hosts

The actuation and levitation of air-suspended objects by a magnetic field, due to its noncontact and holonomic manipulation modes, are important technological capabilities for device applications. However, owing to a higher density of conventional ferromagnets or nanoparticle-containing polymers and strong magnetic fields required for actuation, fabricating lightweight materials with a sensitive magnetic response for weight critical applications is challenging. Here, we report ultralight aerogel-based magnets (aero-magnets) comprising assembled ferromagnetic nanomaterials with highly magnetic anisotropy where the magnetic domains can be programmed by external predesigned fields. To demonstrate the breadth of manufacturing methods for this breed of aero-magnet composites, both silica/nanocellulose aerogel hosts and ferromagnetic nanorod/nanoplatelet guests have been explored. Single and double domains with out-of-plane magnetization are programmed into the aero-magnets and characterized by magnetic force microscopy. The levitation and actuation of the aero-magnets are realized while exposed to a small external magnetic field of 11 mT and introduced to a switching circuit. Furthermore, the elastic moduli of the aero-magnets are estimated by dynamic magnetic responses of the ferromagnetic nanoparticles tightly tethered in the aerogel hosts under rapid cyclic fields. These programmable aero-magnets could serve as monolithic magnetic actuator units in the fields of tiny robots and aerospace components.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Multiferroicity in atomic van der Waals heterostructures

Materials that are simultaneously ferromagnetic and ferroelectric - multiferroics - promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d -orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients' structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr 2 Ge 2 Te 6 and ferroelectric In 2 Se 3 , thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In 2 Se 3 reverses its polarization, the magnetism of Cr 2 Ge 2 Te 6 is switched, and correspondingly In 2 Se 3 becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films

We report the combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO 3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO 3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO 3 decreases valence and Our the Mn switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

A Low-Profile Gate Power Supply for a SiC Phase Leg with Reduced Isolation Capacitance

Gate driver power supply (GDPS) for SiC devices needs power to 5 W as the switching frequency increases to hundreds of kHz. Resonant converters with planar magnetics demand GDPS with a lower profile. Also, the isolation capacitance (Cp) needs to be minimized for SiC devices with high dv/dt. This paper proposed a planar 5 W*2, 20 V isolated gate power supply for a SiC phase leg in the EV traction inverter. Air-core magnetics with PCB windings are applied for low profile. A single-switch resonant Class-E topology is proposed with zero-voltage switching at 6.78 MHz to minimize the magnetics footprint for a 6 pF Cp. Compared with commercial power supplies with similar power, the proposed power supply reduced the profile and Cp by more than half without sacrificing its efficiency and power density.

Li, Bo↗