A study of defect structures with the field ion microscope Semiannual report, 1 Mar. - 31 Aug. 1967
Computer models to aid in interpretating field ion micrographs of crystal structures
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Computer models to aid in interpretating field ion micrographs of crystal structures
Proton irradiation effects on liver cells and tissue of primates
Component failure modes analysis using scanning electron microscopy, noting applications to study of semiconductors and wire plating anomalies
Field ion microscopy application in electrochemistry for surface effects observations, studying exchange current density on iridium tip
Scanning machine CHLOE, developed for photographic use, is combined with a digital computer to obtain quantitative and statistically significant data on chromosome shapes, distribution, density, and pairing. CHLOE permits data acquisition about a chromosome complement to be obtained two times faster than by manual pairing.
Scanning electron microscopy applications in study of thermal runaway in multi-emitter power transistors
Temperature rise of micron sized silver particles on carbon film due to electron beam heating, setting up heat balance equation
Rhenium effect on lattice solid solubility of oxygen in tungsten, calculating rhenium-oxygen cluster minimum binding free energy
Field ion microscopy of stoichiometric platinum and nickel alloys for atomic ordering parameters
Projected Hartree-Fock wave function analysis of inelastic proton scattering from neon-20
Lattice planes and interplanar spacings of small vapor deposited gold crystals, using transmission electron microscopy
Coupled channel calculation of inelastic proton scattering from Ne 20 using Hartree-Fock wave functions
Inverted coexistence possibility of spherical and deformed states in Si 28 and S 32 nuclei
Near stoichiometric binary alloys atomic ordering parameters quantization by field ion micrography, using direct counting and optical transformation techniques
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Hollow-cone illumination techniques, using an annular objective aperture located behind back focal plane of objective lens, increase image contrast and minimize chromatic aberrations.
The X-ray and gamma-ray induced decomposition of ammonium perchlorate was studied by optical, transmission, and scanning electron microscopy. This material is a commonly used oxidizer in solid propellents which could be employed in deep-space probes, and where they will be subjected to a variety of radiations for as long as ten years. In some respects the radiation-induced damage closely resembles the effects produced by thermal decomposition, but in other respects the results differ markedly. Similar radiation and thermal effects include the following: (1) irregular or ill-defined circular etch pits are formed in both cases; (2) approximately the same size pits are produced; (3) the pit density is similar; (4) the c face is considerably more reactive than the m face; and (5) most importantly, many of the etch pits are aligned in crystallographic directions which are the same for thermal or radiolytic decomposition. Thus, dislocations play an important role in the radiolytic decomposition process.
Electron micrographs have been obtained which clearly show the existence of a void network in amorphous Ge films formed at substrate temperatures of 25 and 150 C, and the absence of a void network in films formed at higher substrate temperatures of 200 and 250 C. These results correlate quite well with density measurements and predictions of void densities by indirect methods.