Sub-Nanosecond, Room-Temperature, Mid-IR Fe:ZnSe Gain-Switched Laser: Experimental Characterization and Modeling
We present the modeling and experimental characterization of a room-temperature, sub-nanosecond, gain-switched (GS) Fe:ZnSe laser operating at 4.4–4.8 μm. As pump sources, we used a 2.79 µm Q-switched Cr:Er:YSGG laser with a pulse duration of 52 ns and the 2.98 μm idler of a Nd:YAG pumped KTA-OPO system with a pulse duration of 9 ns. The shortest pulse durations were measured to be 1.4 ns and 0.7 ns under excitation by the Cr:Er:YSGG laser and KTA-OPO system, respectively. The developed Fe:ZnSe laser model showed good agreement with the experimental results. Optimization of the laser parameters based on model simulations suggests that an Fe:ZnSe microchip laser configuration could be achieved with a pulse duration of ~250 ps and an efficiency of ~20%.