New materials and devices for thermoelectric applications
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Based on literature data and experimental findings at JPL, semiconductors with the skutterudite structure TPn(sub 3) (where T is a transition metal element such as Co, Rh, Ir, Ni and Pd, and Pn is a pnicogen element such as P, As and Sb) possess attractive characteristics and show a good potential for high ZT values. the high degree of covalency results in high mobility and low electrical resistivity values while a relatively complex 32-atom unit cell results in a reasonably low thermal conductivity.
The increased speeds of integrated circuits is accompanied by increased power levels and the need to package the IC chips very close together.
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today, more than ever before, means must be found to apply the full power of modern materials science to the important problem of efficient and environmentally friendly energy conversion devices.
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Young's modulus, bulk density, fracture strength, and fracture toughness of alpha silicon carbide manufactured by extrusion and by isopressing were measured at room and elevated temperature in order to determine material feasibility as augers for the Tile Overlay Repair attachment. The measured properties of extruded and isopressed materials differ significantly, with the extruded material exhibiting marked strength anisotropy and lower density. The measurements were made between July and September 2006 at Glenn Research Center (GRC), in order to obtain design data for use in structural and thermal mathematical models.
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