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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

42 ENGINEERING↗
NASA NTRS1999

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Asenov, Asen↗
NASA NTRS2013

Calcium-Magnesium-Aluminosilicate (CMAS) Reactions and Degradation Mechanisms of Advanced Environmental Barrier Coatings

The thermochemical reactions between calcium-magnesium-aluminosilicate- (CMAS-) based road sand and several advanced turbine engine environmental barrier coating (EBC) materials were studied. The phase stability, reaction kinetics and degradation mechanisms of rare earth (RE)-silicates Yb2SiO5, Y2Si2O7, and RE-oxide doped HfO2 and ZrO2 under the CMAS infiltration condition at 1500 C were investigated, and the microstructure and phase characteristics of CMAS-EBC specimens were examined using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Experimental results showed that the CMAS dissolved RE-silicates to form crystalline, highly non-stoichiometric apatite phases, and in particular attacking the silicate grain boundaries. Cross-section images show that the CMAS reacted with specimens and deeply penetrated into the EBC grain boundaries and formed extensive low-melting eutectic phases, causing grain boundary recession with increasing testing time in the silicate materials. The preliminary results also showed that CMAS reactions also formed low melting grain boundary phases in the higher concentration RE-oxide doped HfO2 systems. The effect of the test temperature on CMAS reactions of the EBC materials will also be discussed. The faster diffusion exhibited by apatite and RE-doped oxide phases and the formation of extensive grain boundary low-melting phases may limit the CMAS resistance of some of the environmental barrier coatings at high temperatures.

Ahlborg, Nadia L.↗
DOE OSTI2020

Electron-phonon drag enhancement of transport properties from a fully coupled ab initio Boltzmann formalism

We present a combined treatment of the nonequilibrium dynamics and transport of electrons and phonons by carrying out ab initio calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in the traditional semiconductor picture. Drag also strongly boosts the intrinsic electron mobility, thermal conductivity and the Lorenz number. Impurity scattering is seen to suppress the drag enhancement of the thermal and electrical conductivities, while having weak effects on the enhancement of the Lorenz number and thermopower. We demonstrate these effects in n-doped 3C-SiC at room temperature, and explain their origins. This work establishes the roles of microscopic scattering mechanisms in the emergence of strong drag effects in the transport of the interacting electron-phonon gas.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interest especially for their electron-doped states. However, previous experiments have been largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here, an ionic-liquid-gating-induced protonation method is utilized to achieve electron-doping into a 5d Mott-insulator built with a SrIrO 3 /SrTiO 3 superlattice (SL), and a systematic mapping of its electron-doped phase diagram is achieved with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolves into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed SL structure can be readily extended into other systems with more exotic states to explore.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Role of Solvation on Diffusion of Ions in Diblock Copolymers: Understanding the Molecular Weight Effect through Modeling

Salt-doped diblock copolymers with microphase-separated domains of both an ion conductive and a mechanically strong polymer have been extensively studied due to their potential in transport applications. Several unusual or counterintuitive trends regarding their transport properties have been observed experimentally, such as increasing ion conduction as a function of molecular weight. A vital feature of these systems is the strong solvation of ions in the conducting microphase due to its higher dielectric constant. Herein, we perform molecular dynamics simulations using a coarse-grained model that includes a 1/r 4 potential form to generically represent ion solvation, allowing us to reproduce experimentally observed trends and explore their molecular underpinnings. We find that increasing ion concentration can increase or decrease ion diffusion, depending on solvation strength. We further show that the trend of increasing diffusion with molecular weight becomes more dramatic as ions are solvated in one polymer block more strongly or as the ion-ion interactions get stronger. In contrast to expectations, the interfacial width or the overlap of ions with the nonconductive polymer block do not adequately explain this phenomenon; instead, local ion agglomeration best explains reduced diffusion. Interfacial sharpening, controlled by the Flory chi parameter and molecular weight, tends to allow ions to spread more uniformly, and this increases their diffusion.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗
NASA NTRS1972

Radiation-induced extrinsic photoconductivity in Li-doped Si.

Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.

Fenimore, E.↗
DOE OSTI2024

Modeling and design of a separate effects irradiation test targeting fission gas release from Cr-doped UO 2

Fission gas release (FGR) from nuclear fuel during operation can diminish heat transfer properties across the pellet-cladding gap and increase the fuel rod internal pressure, thereby posing a concern to fuel reliability and safety during an accident. Enlarging the fuel grain size, which has been shown to improve fission gas retention, can be achieved by doping the fuel feedstock prior to sintering. In this work, the BISON fuel performance code was used to predict FGR from undoped and chromia-doped UO 2 (referred to as Cr-doped UO 2 ) fuel specimens with different grain sizes and across various temperatures. The BISON models identified the irradiation conditions for which FGR is most significant, and a separate effects irradiation experiment in the High Flux Isotope Reactor (HFIR) was then developed targeting those conditions. Further, the experiment leveraged the MiniFuel irradiation capability at Oak Ridge National Laboratory and consisted of 12 fuel specimens of varying grain size and Cr content. A coupling scheme between BISON FGR results and the ANSYS finite element thermal model used for experiment design was formulated to predict cumulative FGR from each fuel specimen based on expected irradiation temperature histories. The fuel samples were fabricated and characterized as a part of this work, and the fuel compositions modeled in BISON were representative of the specimens used in the experiment. This combined modeling and experimental effort aims to study the effect of fuel grain size and Cr content on FGR and to provide simulated BISON FGR results that can be used for future model validation activities.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Gradient Doping in Sn–Pb Perovskites by Barium Ions for Efficient Single-Junction and Tandem Solar Cells

Narrow bandgap tin-lead (NBG Sn-Pb) perovskites generally have a high density of unintentional p-type self-doping, which reduces the charge carrier lifetimes, diffusion lengths and device efficiencies. Here, we demonstrate a p-n homojunction across the Sn-Pb perovskite resulted from a gradient doping by Ba 2+ . We report that 0.1 mol% Ba 2+ can effectively compensate the p-doping of Sn-Pb perovskites or even turns it to n-type without changing its bandgap. Ba 2+ cations are found to stay at the interstitial sites and work as shallow electron donor. In addition, Ba 2+ cations show a unique heterogeneous distribution in perovskite film. Most of the barium ions stay in the top 600 nanometer region of the perovskite films and turn it into weakly n-type, while the bottom portion of the film remains to be p-type. The gradient doping forms of a homojunction from top to bottom of the perovskite films with a built-in field that facilitates extraction of photogenerated carriers, resulting an increased carrier extraction length. Furthermore, this strategy enhanced the efficiency of Sn-Pb perovskite single-junction solar cells to over 21.0% and boosted the efficiencies of monolithic perovskite-perovskite tandem solar cells to 25.3% and 24.1%, for active areas of 5.9 mm2 and 0.94 cm 2 , respectively.

14 SOLAR ENERGY↗
DOE OSTI2019

The Importance of p-Doping for Quantum Dot Laser on Silicon Performance

p-type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100°C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. We also describe a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate.

42 ENGINEERING↗
DOE OSTI2020

Tunable Dopants with Intrinsic Counterion Separation Reveal the Effects of Electron Affinity on Dopant Intercalation and Free Carrier Production in Sequentially Doped Conjugated Polymer Films

Carrier mobility in doped conjugated polymers is limited by Coulomb interactions with dopant counterions. This complicates studying the effect of the dopant’s oxidation potential on carrier generation because different dopants have different Coulomb interactions with polarons on the polymer backbone. In this work, dodecaborane (DDB)-based dopants are used, which electrostatically shield counterions from carriers and have tunable redox potentials at constant size and shape. DDB dopants produce mobile carriers due to spatial separation of the counterion, and those with greater energetic offsets produce more carriers. Neutron reflectometry indicates that dopant infiltration into conjugated polymer films is redox-potential-driven. Remarkably, X-ray scattering shows that despite their large 2-nm size, DDBs intercalate into the crystalline polymer lamellae like small molecules, indicating that this is the preferred location for dopants of any size. These findings elucidate why doping conjugated polymers usually produces integer, rather than partial charge transfer: dopant counterions effectively intercalate into the lamellae, far from the polarons on the polymer backbone. Finally, it is shown that the IR spectrum provides a simple way to determine polaron mobility. Overall, higher oxidation potentials lead to higher doping efficiencies, with values reaching 100% for driving forces sufficient to dope poorly crystalline regions of the film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Thickness dependent itinerant ferromagnetism in ultrathin Ba-doped SrRu O 3 films

The electronic and magnetic properties in AB⁢O 3 perovskite oxides are extremely sensitive to lattice structure, but also to dimensionality, such as the thickness in thin film-form. Here, we report the thickness-dependent electromagnetic properties of ultrathin epitaxially stabilized Sr 1-x ⁢Ba x ⁢Ru⁢O 3 (x = 0.08, 0.2) thin films on a SrTi⁢O 3 (001) substrate. The results reveal that the barium doping (0.08 ≤ x ≤ 0.20) reduces Ru⁢O 6 orthorhombic distortions existing in SrRu⁢O 3 and induces a tetragonal distortion, as evidenced by out-of-plane lattice expansion. A metal-to-insulator transition, accompanied by a ferromagnetic to nonmagnetic transition occurs with reducing film thickness from 10 to 3 unit cells for both x = 0.08 and 0.2, regardless of the doping level. The results suggest that the effects of compositional vacancies and surface/interface contributions introduced via dimensional confinement are more dominant than A-site chemical disorder or structural distortion for the loss of metallicity and ferromagnetism in ultra-thin epitaxial films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quasiparticle and Optical Properties of Carrier-Doped Monolayer MoTe 2 from First Principles

The intrinsic weak and highly nonlocal dielectric screening of two-dimensional materials is well-known to lead to high sensitivity of their optoelectronic properties to environment. Less studied theoretically is the role of free carriers in those properties. In this report we use ab initio GW and Bethe-Salpeter equation calculations, with a rigorous treatment of dynamical screening and local-field effects, to study the doping dependence of the quasiparticle and optical properties of a monolayer transition-metal dichalcogenide, 2H MoTe 2 . Here we predict a quasiparticle band gap renormalization of several hundreds of meV for experimentally attainable carrier densities and a similarly sizable decrease in the exciton binding energy. This results in an almost constant excitation energy for the lowest-energy exciton resonance with an increasing doping density. Using a newly developed and generally applicable plasmon-pole model and a self-consistent solution of the Bethe-Salpeter equation, we reveal the importance of accurately capturing both dynamical and local-field effects to understand detailed photoluminescence measurements.

2D material↗
DOE OSTI2026

Synergistic Doping and Stabilization of Magnetically Tunable LnTi3(Sb,Sn)4 (Ln: Ce–Gd) Kagome Metals

Here, we present our synthesis and characterization of the LnTi3(Sb,Sn)4 (Ln: Ce, Pr, Nd, Sm, Gd) family of cleavable kagome metals. While these materials are isostructural to the LnTi3Bi4 family, they only form as (Sb,Sn) solid-solutions with no corresponding LnTi3Sb4 or LnTi3Sn4 phases. We use a combination of first-principles density functional theory (DFT) and crystal orbital Hamilton population (COHP) calculations to show that (Sb,Sn) alloying has a stabilizing effect on the structure by adjusting the Fermi level, filling bonding states, depopulating antibonding states, and adjusting the density of states (DOS) toward local minima, an effect we call “synergistic doping.” Through a detailed characterization of the SmTi3(Sb,Sn)4 series, we further demonstrate that the tunable Fermi level has a profound effect on the physical properties. We observe multiple magnetic phases that stem from a competition between antiferromagnetic (AFM) and ferromagnetic-like (FM) ground states. Furthermore, the (Sb,Sn) ratio allows us to tune from direct AFM-FM competition toward a complex admixture with properties reminiscent of the recently discovered TbTi3Bi4. Ultimately, our work demonstrates how the concept of synergistic doping provides a means to stabilize new structures while developing systems with intrinsically tunable chemical, magnetic, and electronic properties.

Ortiz, Brenden [ORNL] (ORCID:0000000213337003)↗
DOE OSTI2024

Ion diffusion retarded by diverging chemical susceptibility

Abstract For first-order phase transitions, the second derivatives of Gibbs free energy (specific heat and compressibility) diverge at the transition point, resulting in an effect known as super-elasticity along the pressure axis, or super-thermicity along the temperature axis. Here we report a chemical analogy of these singularity effects along the atomic doping axis, where the second derivative of Gibbs free energy (chemical susceptibility) diverges at the transition point, leading to an anomalously high energy barrier for dopant diffusion in co-existing phases, an effect we coin as super-susceptibility. The effect is realized in hydrogen diffusion in vanadium dioxide (VO 2 ) with a metal-insulator transition (MIT). We show that hydrogen faces three times higher energy barrier and over one order of magnitude lower diffusivity when it diffuses across a metal-insulator domain wall in VO 2 . The additional energy barrier is attributed to a volumetric energy penalty that the diffusers need to pay for the reduction of latent heat. The super-susceptibility and resultant retarded atomic diffusion are expected to exist universally in all phase transformations where the transformation temperature is coupled to chemical composition, and inspires new ways to engineer dopant diffusion in phase-coexisting material systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1971

Dynamic Nuclear Polarization in Samarium Doped Lanthanum Magnesium Nitrate

The dynamic nuclear polarization of hydrogen nuclei by the solid effect in single crystals of samarium doped lanthanum magnesium nitrate (Sm:LMN) was studied theoretically and experimentally. The equations of evolution governing the dynamic nuclear polarization by the solid effect were derived in detail using the spin temperature theory and the complete expression for the steady state enhancement of the nuclear polarization was calculated. Experimental enhancements of the proton polarization were obtained for eight crystals at 9.2 GHz and liquid helium temperatures. The samarium concentration ranged from 0.1 percent to 1.1 percent as determined by X-ray fluorescence. A peak enhancement of 181 was measured for a 1.1 percent Sm:LMN crystal at 3.0 K. The maximum enhancements extrapolated with the theory using the experimental data for peak enhancement versus microwave power and correcting for leakage, agree with the ideal enhancement (240 in this experiment) within experimental error for three of the crystals.

Byvik, C. E.↗