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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Domain patterning by electron beam of MgO doped lithium niobate covered by resist

Periodical domain structuring by focused electron beam irradiation of MgO-doped lithium niobate (MgOCLN) single crystalline plate covered by resist layer was studied both experimentally and by computer simulation. The dependences of domain size on the charge dose and distance between isolated domains were measured. It has been shown that the quality of periodical domain pattern depends on the thickness of resist layer and electron energy. The experimentally obtained periodic domain structures have been divided into four types. The irradiation parameters for the most uniform patterning were obtained experimentally. It was shown by computer simulation that the space charge slightly touching the crystal surface produced the maximum value of electric field at the resist/LN interface thus resulting in the best pattern quality. The obtained knowledge allowed us to optimize the poling process and to make the periodical domain patterns in 1-mm-thick wafers with an area up to 1 × 5 mm{sup 2} and a period of 6.89 μm for green light second harmonic generation. Spatial distribution of the efficiency of light frequency conversion confirmed the high homogeneity of the tailored domain patterns.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Chemical and Morphological Control of Interfacial Self-Doping for Efficient Organic Electronics

Solution-based processing of materials for electrical doping of organic semiconductor interfaces is attractive for boosting the efficiency of organic electronic devices with multilayer structures. In order to simplify this process, self-doping perylene diimide (PDI)-based ionene polymers are synthesized, in which the semiconductor PDI components are embedded together with electrolyte dopants in the polymer backbone. Functionality contained within the PDI monomers suppresses their aggregation, affording self-doping interlayers with controllable thickness when processed from solution into organic photovoltaic devices (OPVs). Optimal results for interfacial self-doping lead to increased power conversion efficiencies (PCEs) of the fullerene-based OPVs, from 2.62% to 10.64%, and of the nonfullerene-based OPVs, from 3.34% to 10.59%. These PDI–ionene interlayers enable chemical and morphological control of interfacial doping and conductivity, demonstrating that the conductive channels are crucial for charge transport in doped organic semiconductor films. Using these novel interlayers with efficient doping and high conductivity, both fullerene- and nonfullerene-based OPVs are achieved with PCEs exceeding 9% over interlayer thicknesses ranging from ≈3 to 40 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}

We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

DFT study of Al doped armchair SWCNTs

Electronic properties of endohedrally doped armchair single-walled carbon nanotubes (SWCNTs) with a chain of six Al atoms have been studied using ab-initio density functional theory. We investigate the binding energy/atom, ionization potential, electron Affinity and Homo-Lumo gap of doped armchair SWNTs from (4,4) to (6,6) with two ends open. BE/dopant atom and ionization potential is maximum for (6, 6) doped armchair carbon nanotube; suggest that it is more stable than (4, 4) and (5, 5) doped tubes. HOMO - LUMO gap of Al doped arm chair carbon nanotubes decreases linearly with the increase in diameter of the tube. This shows that confinement induce a strong effect on electronic properties of doped tubes. These combined systems can be used for future nano electronics. The ab–initio calculations were performed with SIESTA code using generalized gradient approximation (GGA).

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗
DOE OSTI2014

Electronic structure of ruthenium-doped iron chalcogenides

The structural and electronic properties of hypothetical Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems are good candidates for new superconducting iron-based materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

First-principles study of electronic properties of Si doped FeSe{sub 0.9} alloys

We have performed first-principles study of electronic and superconducting properties of FeSe{sub 0.9-x}Si{sub x} (x = 0.0, 0.05) alloys using Korringa-Kohn-Rostoker Atomic Sphere Approximation within the coherent potential approximation (KKR-ASA-CPA). In our calculations, we used the local density approximation (LDA) for the exchange correlation potential. Our calculations show that these alloys are nonmagnetic in nature. We found that the substitution of Si at Se site into FeSe{sub 0.9} made subtle affects in the electronic structure with respect to the parent FeSe. The results have been analyzed in terms of changes in the density of states (DOS), band structures, Fermi surfaces and the superconducting transition temperature of FeSe{sub 0.9} and FeSe{sub 0.85}Si{sub 0.05} alloys.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Rapid change of superconductivity and electron-phonon coupling through critical doping in Bi-2212

Electron-boson coupling plays a key role in superconductivity for many systems. However, in copper-based high–critical temperature ( T c ) superconductors, its relation to superconductivity remains controversial despite strong spectroscopic fingerprints. In this study, we used angle-resolved photoemission spectroscopy to find a pronounced correlation between the superconducting gap and the bosonic coupling strength near the Brillouin zone boundary in Bi 2 Sr 2 CaCu 2 O 8+δ . The bosonic coupling strength rapidly increases from the overdoped Fermi liquid regime to the optimally doped strange metal, concomitant with the quadrupled superconducting gap and the doubled gap-to- T c ratio across the pseudogap boundary. This synchronized lattice and electronic response suggests that the effects of electronic interaction and the electron-phonon coupling (EPC) reinforce each other in a positive-feedback loop upon entering the strange-metal regime, which in turn drives a stronger superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1973

Effect of 1 MeV electrons on ceria-doped solar cell cover glass

The effect of 1 MeV electrons on the transmission properties of 1.5-percent ceria-doped solar cell cover glass was studied. Samples of doped and undoped cover glass and synthetic fused silica were irradiated with a total integrated flux of 10 to the 15th power e/sq cm. Wideband transmission and spectral transmission measurements were made before and after irradiation. The results indicate that 1.5-percent ceria-doped cover glass is much less sensitive to radiation induced discoloration than undoped cover glass. Consequently, the glass is comparable to synthetic fused silica when used as a radiation resistant solar cell cover for many space missions.

Haynes, G. A.↗
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗
DOE OSTI2016

Nonrigid band shift and nonmonotonic electronic structure changes upon doping in the normal state of the pnictide high-temperature superconductor Ba ( F e 1 - x C o x ) 2 A s 2

Here, we report systematic angle-resolved photoemission (ARPES) experiments using different photon polarizations and experimental geometries and find that the doping evolution of the normal state of Ba(Fe 1–x Co x ) 2 As 2 deviates significantly from the predictions of a rigid band model. The data reveal a nonmonotonic dependence upon doping of key quantities such as band filling, bandwidth of the electron pocket, and quasiparticle coherence. Our analysis suggests that the observed phenomenology and the inapplicability of the rigid band model in Co-doped Ba122 are due to electronic correlations, and not to the either the strength of the impurity potential, or self-energy effects due to impurity scattering. Our findings indicate that the effects of doping in pnictides are much more complicated than currently believed. More generally, they indicate that a deep understanding of the evolution of the electronic properties of the normal state, which requires an understanding of the doping process, remains elusive even for the 122 iron-pnictides, which are viewed as the least correlated of the high-T C unconventional superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electron–phonon interaction and ultrafast photoemission from doped monolayer MoS 2

We have examined the effect of electron–phonon coupling on photoluminescence and ultrafast response of electron doped monolayer MoS2, using a combination of density functional theory, time dependent density functional theory, and many-body theory. For small doping (~1–3%) of interest here, the electron–phonon coupling parameter is modest (~0.1–0.2) but its effect on the emissive properties and response of the system to femtosecond (fs) laser pulses is striking. We find an ultrafast (fs) relaxation of the electronic subsystem as well as a high fluence of visible light emission induced by electron phonon interaction. Together with high carrier mobility, these features of monolayer MoS2 may be relevant for optoelectronic technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Two-dimensional electron gas in a modulation-doped SrTiO{sub 3}/Sr(Ti, Zr)O{sub 3} heterostructure

A two-dimensional electron gas (2DEG) in SrTiO{sub 3} is created via modulation doping by interfacing undoped SrTiO{sub 3} with a wider-band-gap material, SrTi{sub 1−x}Zr{sub x}O{sub 3}, which is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO{sub 3}, and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Strain effects on the electronic properties in δ -doped oxide superlattices

We investigated strain effects on the electronic properties of (LaTiO 3 ) 1 /(SrTiO 3 )N superlattices using density functional theory. Under biaxial in-plane strain within the range of -5% ≤ ε// ≤ 5%, the d xy orbital electrons are highly localized at the interfaces whereas the d yz and d xz orbital electrons are more distributed in the SrTiO 3 (STO) spacer layers. For STO thickness N ≥ 3 unit cells (u.c.), the d xy orbital electrons form two-dimensional (2D) electron gases (2DEGs). The quantized energy levels of the 2DEG are insensitive to the STO spacer thickness, but are strongly dependent on the applied biaxial in-plane strain. As the in-plane strain changes from compressive to tensile, the quantized energy levels of the dxy orbitals decrease thereby creating more states with 2D character. In contrast to the d xy orbital, the d yz and dxz orbitals always have three-dimensional (3D) transport characteristics and their energy levels increase as the strain changes from compressive to tensile. In conclusion, since the charge densities in the d xy orbital and the d yz and d xz orbitals respond to biaxial in-plane strain in an opposite way, the transport dimensionality of the majority carriers can be controlled between 2D and 3D by applying biaxial in-plane strain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Crystals, magnetic and electronic properties of a new ThCr{sub 2}Si{sub 2}-type BaMn{sub 2}Bi{sub 2} and K-doped compositions

This is a report on the new 122 ternary transition-metal pnictide of BaMn{sub 2}Bi{sub 2}, which is crystallized from bismuth flux. BaMn{sub 2}Bi{sub 2} adopts ThCr{sub 2}Si{sub 2}-type structure (I4/mmm) with a=4.4902(3) Å and c=14.687(1) Å; it is antiferromagnetic with anisotropic magnetic susceptibility and semiconducting with a band gap of E{sub g}=6 meV. Heat capacity result confirms the insulating ground state in BaMn{sub 2}Bi{sub 2} with the electronic residual Sommerfeld coefficient of γ=0. The high temperature magnetization results show that magnetic ordering temperature is T{sub N} ∼400 K. Hole-doping in BaMn{sub 2}Bi{sub 2} via potassium in Ba{sub 1−x}K{sub x}Mn{sub 2}Bi{sub 2} results in metallic behavior for x=0.10(1), 0.32(1) and 0.36(1). With K-doping, more magnetically anisotropic behavior is observed. Although there is a downturn in electrical resistivity and low-field magnetization data below 4 K in>30%-doped crystals, there is no sign of zero resistance or diamagnetism. - Graphical abstract: Local moment antiferromagnet BaMn{sub 2}Bi{sub 2}, the first bismuthide with ThCr{sub 2}Si{sub 2} structure, turns metallic upon K-doping. Highlights: • BaMn{sub 2}Bi{sub 2} and Ba{sub 1−x}K{sub x}Mn{sub 2}Bi{sub 2} (0≤x<0.4) measuring up to 1 cm in length have been synthesized from Bi flux reactions. • BaMn{sub 2}Bi{sub 2} is the first bismuthide with ThCr{sub 2}Si{sub 2}-type structure. • BaMn{sub 2}Bi{sub 2} is a small gap semiconductor but, upon hole-doping, turns metallic with a downturn in resistivity below 4 K. • BaMn{sub 2}Bi{sub 2} is a local moment antiferromagnet with T{sub N} ∼400 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds

The structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds are investigated by x-ray powder diffraction, differential scanning calorimetry (DSC), magnetic measurements, and first-principles calculations. Results indicate that all samples undergo a martensitic transition from the Ni{sub 2}In-type parent phase to TiNiSi-type orthorhombic phase at high temperatures. The substitution of Co(Fe) for Mn in Mn{sub 1−x}Co{sub x}NiSi (x = 0.2, 0.3, and 0.4) and Mn{sub 1−y}Fe{sub y}NiSi (y = 0.26, 0.30, 0.36, 0.46, and 0.55) samples decreases the structural transition temperature and Curie temperature of martensite. The martensite phases show a typical ferromagnetic behavior with saturation field being basically unchanged with increasing Co(Fe) content, while the saturation magnetization shows a decreasing tendency. The theoretically calculated moments are in good agreement with the experimentally measured results. The orbital hybridizations between different 3d elements are analyzed from the distribution of density of states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Multiple Slater Determinants and Strong Spin-Fluctuations as Key Ingredients of the Electronic Structure of Electron- and Hole-Doped Pb 10− x Cu x (PO 4 ) 6 O

LK-99, with chemical formula Pb 10−x Cu x (PO 4 ) 6 O, was recently reported to be a room-temperature superconductor. While this claim has met with little support in a flurry of ensuing work, a variety of calculations (mostly based on density-functional theory) have demonstrated that the system possesses some unusual characteristics in the electronic structure, in particular flat bands. We have established previously that within DFT, the system is insulating with many characteristics resembling the classic cuprates, provided the structure is not constrained to the P3(143) symmetry nominally assigned to it. Here we describe the basic electronic structure of LK-99 within self-consistent many-body perturbative approach, quasiparticle self-consistent GW (QSGW) approximation and their diagrammatic extensions. QSGW predicts that pristine LK-99 is indeed a Mott/charge transfer insulator, with a bandgap gap in excess of 3 eV, whether or not constrained to the P3(143) symmetry. When Pb 9 Cu(PO 4 ) 6 O is hole-doped, the valence bands modify only slightly, and a hole pocket appears. However, two solutions emerge: a high-moment solution with the Cu local moment aligned parallel to neighbors, and a low-moment solution with Cu aligned antiparallel to its environment. In the electron-doped case the conduction band structure changes significantly: states of mostly Pb character merge with the formerly dispersionless Cu d state, and high-spin and low spin solutions once again appear. Thus we conclude that with suitable doping, the ground state of the system is not adequately described by a band picture, and that strong correlations are likely. Irrespective of whether this system class hosts superconductivity or not, the transition of Pb 10 (PO 4 ) 6 O from being a band insulator to Pb 9 Cu(PO 4 ) 6 O, a Mott insulator, and multi-determinantal nature of doped Mott physics make this an extremely interesting case-study for strongly correlated many-body physics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗