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DOE OSTI2023

Vapor-Deposited n = 2 Ruddlesden–Popper Interface Layers Aid Charge Carrier Extraction in Perovskite Solar Cells

Interfacial passivation with bulky organic cations such as phenetylammonium iodide has enabled high performance for metal halide perovskite optoelectronic devices. However, the homogeneity of these interfaces and their formation dynamics are poorly understood. Here we study how Ruddlesden-Popper 2D phases form at a 3D perovskite interface when the 2D precursors are introduced via solution or via vapor. When using vapor deposition, we observe uniform coverage of the capping layer and the formation of a predominantly n = 2 Ruddlesden-Popper phase. In contrast, when using solution deposition, we observe the presence of a mixture of n = 2 and n = 1 in the film and the formation of aggregates of the organic cations. As a result of the better phase purity and uniformity, vapor deposition enables higher median solar cell performance with narrower distribution compared to solution-treated films. This study provides fundamental information that the perovskite community can use to better design capping layers to achieve higher charge extraction efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗

NASA NTRS2007

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Pain, Bedabrata↗

DOE OSTI2021

Evaluation and Applications of Multi-Instrument Boundary-Layer Thermodynamic Retrievals

Recent reports have highlighted the need for improved observations of the atmosphere boundary layer. In this study, we explore the combination of ground-based active and passive remote sensors deployed for thermodynamic profiling to analyze various boundary-layer observation strategies. Optimal-estimation retrievals of thermodynamic profiles from Atmospheric Emitted Radiance Interferometer (AERI) observed spectral radiance are compared with and without the addition of active sensor observations from a May–June 2017 observation period at the Atmospheric Radiation Measurement Southern Great Plains site. In all, three separate thermodynamic retrievals are considered here: retrievals including AERI data only, retrievals including AERI data and Vaisala water vapour differential-absorption lidar data, and retrievals including AERI data and Raman lidar data. First, the three retrievals are compared to each other and to reference radiosonde data over the full observation period to obtain a bulk understanding of their differences and characterize the impact of clouds on these retrieved profiles. These analyses show that the most significant differences are in the water vapour field, where the active sensors are better able to represent the moisture gradient in the entrainment zone near the boundary-layer top. Furthermore, we also explore how differences in retrievals may affect results of applied analyses including land–atmosphere coupling, convection indices, and severe storm environmental characterization. Overall, adding active sensors to the optimal-estimation retrieval shows some added information, particularly in the moisture field. Given the costs of such platforms, the value of that added information must be weighed for the application at hand.

54 ENVIRONMENTAL SCIENCES↗

NASA NTRS2021

Evaluation and Applications of Multi-Instrument Boundary-Layer Thermodynamic Retrievals

Recent reports have highlighted the need for improved observations of the boundary layer. In this study, we explore the combination of ground-based active and passive remote sensors deployed for thermodynamic profiling to analyze various boundary-layer observation strategies. Optimal-estimation retrievals of thermodynamic profiles from Atmospheric Emitted Radiance Interferometer (AERI) observed spectral radiance are compared with and without the addition of active sensor observations from a May–June 2017 observation period at the Atmospheric Radiation Measurement–Southern Great Plains Site. In all, three separate thermodynamic retrievals are considered here: retrievals including AERI data only, retrievals including AERI data and Vaisala water vapour differential absorption lidar data, and retrievals including AERI data and Raman lidar data. First, the three retrievals are compared to each other and to reference radiosonde data over the full observation period to get a bulk understanding of their differences and characterize the impact of clouds on these retrieved profiles. These analyses show that the most significant differences are in the water vapour field, where the active sensors are better able to represent the moisture gradient in the entrainment zone near boundary layer top. We also explore how differences in retrievals may impact results of applied analyses including land–atmosphere coupling, convection indices, and severe storm environmental characterization. Overall, adding active sensors to the optimal-estimation retrieval showed some added information, particularly in the moisture field. Given the costs of such platforms, the value of that added information must be weighed for the application at hand.

boundary-layer observation↗

DOE OSTI2022

Monolithic integrated quantum dot photonic integrated circuits

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Monolithic integrated quantum dot photonic integrated circuits

Bowers, John E.↗

DOE OSTI2022

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

14 SOLAR ENERGY↗

NASA NTRS2011

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

detectors↗

NASA NTRS2018

The Feasibility of Detecting Supercooled Liquid with a Forward-Looking Radiometer

A three-dimensional radiative transfer model is utilized to determine the feasibility of a forward-viewing passive sensor for remotely detecting hazardous icing conditions. Wband ground-based radar simulations show no obvious ability to discriminate a cloud-top supercooled layer; however, the spectra for a forward-viewing passive sensor show a strong signal at two stand-off distances when compared with the clear sky spectrum. Such an instrument would be critical for manned and unmanned aircraft, particularly when size, weight, and power requirements restrict the installation of deicing equipment.

clouds↗

DOE OSTI2020

Fabrication of films and coatings used to activate shear thickening, impact resistant electrolytes

A method of making a passively impact resistant composite electrolyte and separator layer includes providing a suspension composition including electrically non-conducting particles that enable shear thickening. The particles can have a polydispersity index of no greater than 0.1, an average particle size in a range of from 50 nm to 1 um, and an absolute zeta potential of greater than ±40 mV. A particle suspension solvent is provided for suspending the particles. The suspension composition is applied to a porous separator material. A portion of the particles and suspension solvent penetrate the pores and the remainder of the particles in the suspension composition are distributed across the surface of the separator material. The suspension solvent is evaporated from the separator material to provide a shear thickening particle loaded separator. A separator assembly and a passivated battery are also disclosed.

25 ENERGY STORAGE↗

DOE OSTI2022

Fabrication of films and coatings used to activate shear thickening, impact resistant electrolytes

Armstrong, Beth L.↗

DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗

NASA NTRS1992

Multi-layer light-weight protective coating and method for application

A thin, light-weight, multi-layer coating is provided for protecting metals and their alloys from environmental attack at high temperatures. A reaction barrier is applied to the metal substrate and a diffusion barrier is then applied to the reaction barrier. A sealant layer may also be applied to the diffusion barrier if desired. The reaction barrier is either non-reactive or passivating with respect to the metal substrate and the diffusion barrier. The diffusion barrier is either non-reactive or passivating with respect to the reaction barrier and the sealant layer. The sealant layer is immiscible with the diffusion barrier and has a softening point below the expected use temperature of the metal.

Wiedemann, Karl E.↗

NASA NTRS2003

CLARAty Functional-Layer Software

Functional-layer software for the Coupled Layer Architecture for Robotics Autonomy (CLARAty) is being developed. [CLARAty was described in Coupled-Layer Architecture for Advanced Software for Robots (NPO-21218), NASA Tech Briefs, Vol. 26, No. 12 (December 2002), page 48. To recapitulate: CLARAty was proposed to improve the modularity of robotic software while tightening the coupling between planning/execution and control subsystems. Whereas prior robotic software architectures have typically contained three levels, the CLARAty architecture contains two layers: a decision layer and a functional layer.] Just as an operating system provides abstraction from computational hardware, the CLARAty functional-layer software provides for abstraction for the different robotic systems. The functional-layer software establishes interrelated, object-oriented hierarchies that contain active and passive objects that represent the different levels of system abstrations and components. The functional-layer software is decomposed into a set of reusable core components and a set of extended components that adapt the reusable set to specific hardware implementations. The reusable components (a) provide behavior and interface definitions and implementations of basic functionality, (b) provide local executive capabilities, (c) manage local resources, and (d) support state and resource queries by the decision layer. Software for robotic systems can be built by use of these components.

Nesnas, Issa↗

DOE OSTI2022

Nafion Passivation of c-Si Surface and Edge for Electron Paramagnetic Resonance

Effective surface passivation of crystalline silicon (c-Si) surface by reducing the carrier recombination rate has led to modern c-Si solar cells with efficiencies > 25% in both laboratory and industrial settings. Typical mainstream surface passivation techniques include high-temperature silicon oxide (SiOx), amorphous silicon (a-Si:H), hydrogen-rich silicon nitride (SiNx), and aluminum oxide (Al2O3) [1]. They have demonstrated excellent surface recombination velocity of < 1 cm/s owing to both chemical passivation (via the hydrogen saturation of Si dangling bonds at the c-Si surface), and field-effect passivation (via the band bending from the fixed charge of the dielectric layers). Recently, several groups have studied solution-based organic materials for c-Si passivation, including bis(trifluoromethane)sulfonimide (TFSI), polystyrenesulfonate, and Nafion [2, 3] via spin or dip coating. All films were processed at ambient room temperature, and a high lifetime of 12 ms, as well as a low saturation current density (J0) of 16 fA/cm2, have been demonstrated using Nafion passivation [2]. However, despite the air instability, Nafion has several advantages when introduced to PV applications: (a) Wafer quality can be measured at high throughput after several process stages. (b) It is compatible with PL mapping, compared to HF liquid passivation which cannot be performed in room ambient. (c) Nafion process is fast and poses fewer constraints on process complexity, and cleanness, compared to Al2O3 and a-Si:H passivation. (d) Nafion is the ideal room temperature passivation, which can be applied onto a small fragment of a degraded module to investigate microscopic mechanisms when studying degradation mechanisms. Edge passivation is needed for advanced characterization tests such as Electron Paramagnetic Resonance (EPR), Electrically Detected Magnetic Resonance (EDMR), Deep Level Transient Spectroscopy (DLTS), local cell current-voltage (J-V), and Suns-Voc. In such cases, the laser-damaged minicell edges will obscure the true degradation mechanisms, and Nafion can effectively passivate them without causing further degradation through elevated-temperature processes. In this contribution, we show the passivation results of Nafion on bare nCz and compare it with a Al2O3 witness. We highlight the importance of edge pre-treatment before Nafion to achieve good passivation. We show that Nafion can reach decent passivation without undergoing high-temperature processes. We also explore the temperature dependency of Nafion through photoluminescence (PL) study and demonstrate the application of Nafion under cryogenic temperature (~6 K) through EPR. Our results reveal that Nafion can reduce surface and edge Si dangling bonds at low temperatures. Thus, it can be used as an effective room temperature passivation technique for advanced characterization methods.

c-Si↗

NASA NTRS1980

Surface effects on the microwave backscatter and emission of snow

Measurements were performed with active and passive microwave sensors for both dry and wet snow conditions. A layer of Rayleigh scatterers with irregular surface boundaries is found to be a reasonable model for interpreting passive and active measurements in X- and Ku-bands. It was found that roughness had a significant effect on both backscatter and emission from wet snow; however, only a small effect was noted for dry snow.

Fung, A. K.↗

DOE OSTI2021

Long-term cyclability of Li 4 Ti 5 O 12 /LiMn 2 O 4 cells using carbonate-based electrolytes for behind-the-meter storage applications

Li 4 Ti 5 O 12 /LiMn 2 O 4 (LTO/LMO) chemistry was evaluated as a potential candidate for behind-the-meter storage (BTMS) applications. Its long-term cycle performance at 45 °C was tested using ethylene carbonate (EC) and propylene carbonate (PC) solvent electrolytes. Over 1000 cycles, LTO/LMO cells exhibited ~80% capacity retention and Coulombic efficiency higher than 99.96%. Electrochemical test results showed the major degradation mode of LTO/LMO cells arises from continuous electrolyte decomposition at the LTO anode and loss of Li inventory. EC and PC electrolytes created distinct surface layers, where the EC reduction products were more effective in passivating the LTO electrode surface. Dissolution and migration of Mn from the cathode was probed as Mn 2+ species distributed throughout the surface layer at the anode. By utilizing a prelithiated LTO electrode, the LTO/LMO cell performance was significantly enhanced with EC electrolyte. On the other hand, PC electrolyte resulted in accelerated electrolyte decomposition at the lithiated LTO surface due to the lack of surface passivation. Thus, mitigating parasitic reactions at the LTO electrode is the key to developing successful LTO/LMO cells.

25 ENERGY STORAGE↗