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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Synthesis and electrical behavior of VO 2 thin films grown on SrRuO 3 electrode layers

VO 2 thin films were grown on conducting oxide underlayer SrRuO 3 buffered SrTiO 3 (111) and Si/SiO 2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO 2 films grown on SrRuO 3 buffered SrTiO 3 and polycrystalline structure for films grown on SrRuO 3 buffered Si/SiO 2 . X-ray photoelectron spectroscopy confirms a dominant presence of V 4+ in both films and establishes a high-quality growth of single-phase VO 2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO 3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO 2 on conducting SrRuO 3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

To enable greater control over thermal atomic layer deposition (ALD) of molybdenum disulfide (MoS 2 ), here we report studies of the reactions of molybdenum hexafluoride (MoF 6 ) and hydrogen sulfide (H 2 S) with metal oxide substrates from nucleation to few-layer films. In situ quartz crystal microbalance experiments performed at 150, 200, and 250 °C revealed temperature-dependent nucleation behavior of the MoF 6 precursor, which is attributed to variations in surface hydroxyl concentration with temperature. In situ Fourier transform infrared spectroscopy coupled with ex situ x-ray photoelectron spectroscopy (XPS) indicated the presence of molybdenum oxide and molybdenum oxyfluoride species during nucleation. Density functional theory calculations additionally support the formation of these species as well as predicted metal oxide to fluoride conversion. Residual gas analysis revealed reaction by-products, and the combined experimental and computational results provided insights into proposed nucleation surface reactions. With additional ALD cycles, Fourier transform infrared spectroscopy indicated steady film growth after ~13 cycles at 200 °C. XPS revealed that higher deposition temperatures resulted in a higher fraction of MoS 2 within the films. Deposition temperature was found to play an important role in film morphology with amorphous films obtained at 200 °C and below, while layered films with vertical platelets were observed at 250 °C. Finally, these results provide an improved understanding of MoS 2 nucleation, which can guide surface preparation for the deposition of few-layer films and advance MoS 2 toward integration into device manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Toward high laser power beam manipulation with nanophotonic materials: evaluating thin film damage performance

Nanophotonic materials enable unprecedented control of light-matter interactions, including the ability to dynamically steer or shape wavefronts. Consequently, nanophotonic systems such as metasurfaces have been touted as promising candidates for free-space optical communications, directed energy and additive manufacturing, which currently rely on slow mechanical scanners or electro-optical components for beam steering and shaping. However, such applications necessitate the ability to support high laser irradiances (> kW/cm 2 ) and systematic studies on the high-power laser damage performance of nanophotonic materials and designs are sparse. Here, we experimentally investigate the pulsed laser-induced damage performance (at λ ∼ 1 µm) of model nanophotonic thin films including gold, indium tin oxide, and refractory materials such as titanium nitride and titanium oxynitride. We also model the spatio-thermal dissipation dynamics upon single-pulse illumination by anchoring experimental laser damage thresholds. Our findings show that gold exhibits the best laser damage resistance, but we argue that alternative materials such as transparent conducting oxides could be optimized to balance the tradeoff between damage resistance and optical tunability, which is critical for the design of thermally robust nanophotonic systems. We also discuss damage mitigation and ruggedization strategies for future device-scale studies and applications requiring high power beam manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Analysis of Low RRR SRF Cavities

Recent findings in the superconducting radio-frequency (SRF) community have shown that introducing certain impurities into high-purity niobium can improve quality factors and accelerating gradients. Success has been found in nitrogen-doping, diffusion of the native oxide into the niobium surface, and thin films of alternate superconductors atop a niobium bulk cavity. We question why some impurities improve RF performance while others hinder it. The purpose of this study is to characterize the impurity profile of niobium with a low residual resistance ratio (RRR) and correlate these impurities with the RF performance of low RRR cavities so that the mechanism of recent impurity-based improvements can be better understood and improved upon. Additionally, we perform a low temperature bake on the low RRR cavity to evaluate how the intentional addition of oxygen to the RF layer affects performance. We have found that low RRR cavities experience low temperature-dependent BCS resistance behavior more prominently than their high RRR counterparts. The results of this study have the potential to unlock a new understanding on SRF materials.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Analysis of Low RRR SRF Cavities

Recent findings in the superconducting radio-frequency (SRF) community have shown that introducing certain impurities into high-purity niobium can improve quality factors and accelerating gradients. Success has been found in nitrogen-doping, diffusion of the native oxide into the niobium surface, and thin films of alternate superconductors atop a niobium bulk cavity. We question why some impurities improve RF performance while others hinder it. The purpose of this study is to characterize the impurity profile of niobium with a low residual resistance ratio (RRR) and correlate these impurities with the RF performance of low RRR cavities so that the mechanism of recent impurity-based improvements can be better understood and improved upon. Additionally, we performed surface treatments, low temperature baking and nitrogen-doping, on low RRR cavities to evaluate how the intentional addition of more impurities to the RF layer affects performance. We have found that low RRR cavities experience low temperature-dependent BCS resistance behavior more prominently than their high RRR counterparts. The results of this study have the potential to unlock a new understanding on SRF materials.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Ion Traps and Packaging for Heterogenous Integration - Chimera

Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.

42 ENGINEERING↗
DOE OSTI2024

Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures

The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO 3 thin films grown on a series of single crystal substrates. Unlike films synthesized on other substrates, NdNiO 3 on SrTiO 3 (NNO/STO) gives rise to a unique band structure which features an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by the orbital hybridization between Ti 3d orbitals of the STO substrate and O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. Further, these findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin-films, thereby offering key insights into tuning their interfacial properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Dynamically Stable Active Sites from Surface Evolution of Perovskite Materials during the Oxygen Evolution Reaction

Perovskite oxides are an important class of oxygen evolution reaction (OER) catalysts in alkaline media, despite the elusive nature of their active sites. In this work, we demonstrate that the origin of the OER activity in a La 1-x SrxCoO 3 model perovskite arises from a thin surface layer of Co hydr(oxy)oxide (CoO x H y ) that interacts with trace-level Fe species present in the electrolyte, creating dynamically stable active sites. Generation of the hydr(oxy)oxide layer is a consequence of a surface evolution process driven by the A-site dissolution and O-vacancy creation. In turn, this imparts a 10-fold improvement in stability against Co dissolution and a 3-fold increase in the activity-stability factor for CoO x H y / LSCO when compared to nanoscale Co-hydr(oxy)oxides clusters. Our results suggest new design rules for active and stable perovskite oxide-based OER materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Phase stabilization and oxidation of a continuous composition spread multi-principal element (AlFeNiTiVZr) 1-x Cr x alloy

Multi-Principal Element Alloys (MPEA) have been hypothesized to maintain a stable single alloy phase and resist corrosion at high temperatures, which are desirable in various functional applications, including material of turbine blades. However, studies into oxidation resistant alloys have been constrained to individual MPEA systems or a limited selection of compositions within those systems. Here, High-Throughput Experimental (HTE) techniques were utilized to rapidly assess phase stability and resistance to oxidation of an (AlFeNiTiVZr) 1-x Cr x continuous composition spread (CCS) thin-film alloy system. High-throughput synchrotron diffraction and Raman spectroscopy were used to identify phases, especially high symmetry structures and oxides, as a function of annealing time and composition. The formation of two distinct phase regions, R 1 and R 2 , across the CCS was observed. One of these phase regions, R 2 , exhibited a stable high symmetry BCC-like phase at Cr concentrations greater than 25.4 at%, and grew a passivating mixed metal surface oxide; whereas, the R 1 phase region, decomposed on oxidation to multiple oxides and reacted with the substrate to form silicides. The passivating mixed metal oxide layer appears to prevent destabilization of the (AlFeNiTiVZr) 1-x Cr x MPEA BCC solid solution. Furthermore, at longer annealing times the passivating phase was seen only above 29.2 at% Cr. High Cr-doped (AlFeNiTiVZr) 1-x Cr x appear to be a good candidate for high temperature, oxidation-resistant structural alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Investigations on the Origin of Topotactic Phase Transition of LaCoO 3 Thin Films with In Situ XRD and Ambient Pressure Hard X-ray Photoelectron Spectroscopy

With the applications of in situ X-ray diffraction (XRD), electrical I–V measurement, and ambient pressure hard X-ray photoelectron spectroscopy (AP-HAXPES), the characteristics of the topotactic phase transition of LaCoO 3 (LCO) thin films are examined. XRD measurements show clear evidence of structural phase transition (SPT) of the LCO thin films from the perovskite (PV) LaCoO 3 to the brownmillerite (BM) La 2 Co 2 O 5 phases through the intermediate La 3 Co 3 O 8 phase at a temperature of 350 °C under high-vacuum conditions, ~10 –5 mbar. The reverse SPT from BM to PV phases is also found under ambient pressure (>100 mbar) of air near 100 °C. Both observed SPTs in XRD are also identified in the electrical I–V measurements, i.e., the metallic PV phase to the insulating BM phase and vice versa. During the onset of SPTs, the bulk chemical and electronic states of LCO thin films are monitored with AP-HAXPES. The oxidation states in Co 2p spectra indicate that the oxygen vacancies are closely related to the SPT of LCO thin films. Also, the presence of enlarged band gap is observed as the SPT from PV to BM phases takes place, revealing the modified electronic properties of LCO due to the creation of oxygen vacancies. In conclusion, the analysis of valence band structures is further compared to the I–V measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2020

An automated workflow to screen alkene reductases using high-throughput thin layer chromatography

Background: Synthetic biology efforts often require high-throughput screening tools for enzyme engineering campaigns. While innovations in chromatographic and mass spectrometry-based techniques provide relevant structural information associated with enzyme activity, these approaches can require cost-intensive instrumentation and technical expertise not broadly available. Moreover, complex workflows and analysis time can significantly impact throughput. To this end, we develop an automated, 96-well screening platform based on thin layer chromatography (TLC) and use it to monitor in vitro activity of a geranylgeranyl reductase isolated from Sulfolobus acidocaldarius (SaGGR). Results: Unreduced SaGGR products are oxidized to their corresponding epoxide and applied to thin layer silica plates by acoustic printing. These derivatives are chromatographically separated based on the extent of epoxidation and are covalently ligated to a chromophore, allowing detection of enzyme variants with unique product distributions or enhanced reductase activity. Herein, we employ this workflow to examine farnesol reduction using a codon-saturation mutagenesis library at the Leu377 site of SaGGR. We show this TLC-based screen can distinguish between fourfold differences in enzyme activity for select mutants and validated those results by GC–MS. Conclusions: With appropriate quantitation methods, this workflow can be used to screen polyprenyl reductase activity and can be readily adapted to analyze broader catalyst libraries whose products are amenable to TLC analysis.

09 BIOMASS FUELS↗
DOE OSTI2025

Synthesis and electronic characterization of Nd2−xSrxNiO4 thin films (0≤x≤1.4)

Layered nickelates have been studied extensively over the last three decades due to their structural similarities to the high-Tc superconducting cuprates. Using reactive oxide molecular beam epitaxy (MBE), we synthesize Nd2−xSrxNiO4 thin films for x=0−1.4 to probe the properties and electronic structure as a function of hole doping. The samples with lower doping show semiconducting behavior across the temperatures probed with an onset of metallic conductivity at x=1.4. We also present polarization-dependent O K and Ni L2,3 x-ray absorption spectra to track the evolution of the oxygen-nickel hybridization, distribution of holes between O 2p and Ni 3d states and the nickel oxidation state across the series. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a Fermi surface that comprises a cupratelike hole pocket of dx2−y2 character with an additional electron pocket of d3z2−r2 character at Γ. The emergence of a quasiparticle peak at the Fermi vector for x=1.4 corroborates the insulator-to-metal transition at x∼1. Finally, observe a fully two-dimensional Fermi surface with no momentum-dependent pseudogap, in contrast to measurements of the related bulk compound, Eu0.9Sr1.1NiO4.

Taylor, Nicole K↗
DOE OSTI2024

Temperature Dependent Early-Stage Oxidation Dynamics of Cu(100) Film with Faceted Holes

Fundamental understanding of surface oxidation dynamics is critical for rational corrosion protection and advanced manufacturing of nanostructured oxides. In situ environmental TEM (ETEM) provides high spatial (nano- to atomic- scale) and temporal (< 0.1 s) resolution to investigate the early-stage oxidation/corrosion dynamics of metals and alloys. Thin samples with facets are widely used to enable cross-sectional observation of the oxidation dynamics in ETEM. However, how different facet orientations oxidize under the same conditions, and how these facets change the oxidation process, has not been investigated before. Here, using in situ ETEM, we systematically compare the oxidation dynamics of Cu(001) thin films, with faceted holes exposing {100} and {110} facets at temperatures ranging from 250–600 °C under 0.03 Pa O 2 . Oxidation preference is observed to change, from Cu(110) facets at lower temperatures to Cu(100) facets at ~ 500 °C. Oxide growth mechanisms change from outward growth on Cu 2 O surfaces at low temperatures, to inward growth on Cu-Cu 2 O interfaces at high temperatures. At high temperatures (500–600 °C), a rod-like Cu 2 O morphology is observed, with side facets of ~ {024} and top facets of {100} on Cu(100). This differs from the square-shaped Cu 2 O exposing {110} facets formed on Cu(001) surfaces. Rod-like oxides exhibit directional growth along their lengths with linear growth rates, regardless of rod length and width. This suggests that O from Cu(001) surfaces, rather than Cu(100) facets, serves as an O source for oxide growth. These results show a direct comparison of oxidation at different orientations with temperature, underscoring the temperature dependence of oxidation preference. Our results also suggest future in situ ETEM experiments viewing oxidation corrosion cross-sectionally should be cautious when oxide size is comparable with sample thickness, as the oxidizing mechanism may change due to sample thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-Temperature Oxidation Behavior of FeCoCrNi+(Cu/Al)-Based High-Entropy Alloys in Humid Air

Previous studies showed some transition metal high-entropy alloy (HEA) compositions can have good oxidation resistance in air up to 800 °C. Four equiatomic HEAs have been developed based on FeCoCrNi with additions of Mn, Cu, Al or Al+Cu. The oxidation behavior of these HEAs was compared in humid (10 vol.% H2O) air at 800 °C for 100–500 h to investigate the influence of water vapor on the oxidation mechanisms. The Cu- and Al-containing alloys exhibited improved oxidation resistance over the Mn composition. For the Cu-containing alloy, a local attack of the Cu-rich phase was observed, which formed an Fe/Ni/Co/Cr spinel that was surrounded by Cr2O3. This oxide was thicker for the humid air atmosphere when compared to dry air, and the transition of the Cu oxide to the spinel was accelerated. The Al-containing HEA formed a thin Al2O3 scale with humidity suppressing AlN formation and forming a smoother oxide layer. The Al+Cu composition had the highest overall oxidation resistance (minimal local attack, no nitridation) and also showed a smooth oxide scale topography under humid air oxidation as opposed to a plate-like, rougher scale under dry air.

Crystallography↗
DOE OSTI2020

Perspectives on Dye Sensitization of Nanocrystalline Mesoporous Thin Films

Recent advances in our mechanistic understanding of dye-sensitized electron transfer reactions occurring at metal oxide interfaces are described. These advances were enabled by the advent of mesoporous thin films, comprised of anatase TiO 2 nanocrystallites, that are amenable to spectroscopic and electrochemical characterization in unprecedented molecular-level detail. The metal-to-ligand charge transfer (MLCT) excited states of Ru polypyridyl compounds serve as the dye sensitizers. Excited-state injection often occurs on ultrafast time scales with yields that can be tuned from unity to near zero through modification of the sensitizer or the electrolyte composition. Transport of the injected electron and the oxidized sensitizer (hole hopping) are both operative in the composite mechanism for charge recombination between the injected electron and the oxidized sensitizer. Sensitizers that contain a pendant electron donor, as well as core/shell SnO 2 /TiO 2 nanostructures, often prolong the lifetime of the injected electron and provide fundamental insights into adiabatic and nonadiabatic electron transfer mechanisms. Regeneration of the oxidized sensitizer by iodide is enhanced through halogen bonding, orbital pathways, and ion pairing. A substantial ~10 MV cm –1 electric field is created by electron injection into TiO 2 nanocrystallites that induces ion migration, reports on the sensitizer dipole orientation, and (in some cases) reorients or flips the sensitizer. Dye-sensitized conductive oxides also promote long-lived charge separation with bias dependent kinetics that provide insights into the reorganization energies associated with electron and proton-coupled electron transfer in the electric double layer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

In situ Study on the Evolution of Atomic and Electronic Structure of LaTiO 3 /SrTiO 3 System

As with other transition-metal oxide interfaces, LaTiO 3 /SrTiO 3 interfaces exhibit interesting electronic properties, such as a two-dimensional electron gas. While the available Mott states and multiple pathways to metallicity in LaTiO 3 can lead to a variety of applications in oxide electronics, the origin of the different properties remains uncertain. Herein, utilizing real-time, in situ x-ray diffraction at the synchrotron, robust but thin LaTiO 3 /SrTiO 3 heterostructures were fabricated using oxide molecular beam epitaxy. A thickness of six unit cells was determined to be critical, at which point the LaTiO 3 /SrTiO 3 heterostructures begin to sustain sharp, well-defined interfaces. The layers of LaTiO 3 and SrTiO 3 were sufficiently thin to benefit from the finite escape length of electrons at resonant soft x-ray photoemission, and the heterostructures were transferred in vacuo after growth to another chamber for synchrotron-based x-ray photoemission spectroscopy studies. With the x-ray energy tuned to the Ti-2p resonance, the LaTiO 3 /SrTiO 3 interfaces could be probed with enough penetration depth and selectivity. It is shown that all of the heterointerfaces exhibit the two-dimensional electron gas.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2020

Observation of interacting polaronic gas behavior in Ta-doped TiO 2 thin films via terahertz time-domain spectroscopy

Transparent conductive oxides (TCOs)—materials that have the twin desirable features of high optical transmission and electrical conductivity—play an increasingly significant role in the fields of photovoltaics and information technology. As an excellent TCO, Ta-doped anatase TiO 2 shows great promise for a wide range of applications. Here, terahertz time-domain spectroscopy is used to study the complex optical conductivity $\tilde{σ}$ (ω) of the TCO—heavily Ta-doped TiO 2 thin films with different Ta-doping concentrations, in the frequency range of 0.3–2.7 THz and the temperature range of 10–300 K. Fitting the complex optical conductivity to a Drude-like behavior allows us to extract the temperature dependence of the effective mass, which suggests the existence of many-body large polarons. Moreover, the carrier scattering rate of Ta-doped TiO 2 with different carrier concentrations agrees with the interacting polaron gas theory. Our results suggest that with increasing electron density in TiO 2 , the interaction between polarons is larger and electron–phonon coupling is smaller, which is beneficial for achieving high mobility and conductivity in TiO 2 .

36 MATERIALS SCIENCE↗