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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

High-temperature strength stability of three forms of chemically vapor deposited tungsten

Three types of CVD tungsten (fluoride-produced, chloride-produced, and a layered composite of the two-termed duplex) were evaluated to determine their high-temperature strength and microstructural stability following 5000-hr exposure to temperatures of 1540 and 1700 C. At the highest temperatures investigated (1540 and 1700 C), the tensile strengths of the two basic materials were essentially equal. At lower temperatures, chloride tungsten possessed lower yield strength but higher ultimate strength than fluoride tungsten while the behavior of the duplex material was generally intermediate. Apparent anomalies in high-temperature elongation behavior are explained on the basis of grain boundary cavity formation and recrystallization. The grain size of fluoride tungsten changed only slightly following 5000-h treatment at 1700 C. In contrast, chloride tungsten possessed both poor resistance to grain growth and an accompanying relatively high ductile-brittle transition temperature.

Bryant, W. A.↗
NASA NTRS1975

Development of an economical silicon solar cell

The growth of electronically viable silicon films on inexpensive foreign substrates is studied, with the objective of creating a technology to radically reduce the overall cost of the silicon employed in photovoltaic solar energy conversion. The approach employed is to enhance crystalline ordering during film nucleation by confining arriving silicon atoms to a narrow band traveling across a substrate, i.e., the Lateral Growth Technique (LGT). The efforts have employed physical vapor deposition of silicon in a vacuum evaporator on glass and metal substrates with both slit masks and single defining edges, and subsequent chemical vapor deposition (CVD) of thicker films on these thin film structures by pyrolysis of silane at higher temperatures.

Lindmayer, J.↗
NASA NTRS1976

Longitudinal residual stresses in boron fibers

A method of measuring the longitudinal residual stress distribution in boron fibers is presented. The residual stresses in commercial CVD boron on tungsten fibers of 102, 142, and 203 microns (4, 5.6, and 8 mil) diameters were determined. Results for the three sizes show a compressive stress at the surface 800 to -1400 MN/sq m 120 to -200 ksi), changing monotonically to a region of tensile stress within the boron. At approximately 25 percent of the original radius, the stress reaches a maximum tensile 600 to 1000 MN/sq m(90 to 150 ksi) and then decreases to compressive near the tungsten boride core. The core itself is under a compressive stress of approximately -1300 MN/sq m (-190 ksi). The effects of surface removal on core residual stress and core-initiated fracture are discussed.

Behrendt, D. R.↗
NASA NTRS1976

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗
NASA NTRS1976

Longitudinal residual stresses in boron fibers

A technique is proposed for measuring the longitudinal residual stress distribution in commercial CVD (Chemical Vapor Deposition) boron on tungsten fibers of 102, 142, and 203 microns in diameter. The experimental apparatus is so designed that continuous measurements are made of the length changes of a boron fiber specimen as the surface of the fiber is removed by electropolishing. The effects of surface removal on core residual stress and core-initiated fracture are discussed. The three sizes of boron fibers investigated show similar residual stress distributions, i.e., compressive at the surface, tensile near the core, and for the 102-micron fiber compressive again in the core. It is shown that an increase in UTS is due to the increase in the compressive stress at the core produced by fiber contraction during surface removal. An expression is derived for calculating the longitudinal residual stress at a given radius for an as-received fiber of a certain radius from measurements of the axial strain produced by removal of the surface by electropolishing.

Behrendt, D. R.↗
NASA NTRS1977

Techniques for increasing boron fiber fracture strain

Improvement in the strain-to-failure of CVD boron fibers is shown possible by contracting the tungsten boride core region and its inherent flaws. The results of three methods are presented in which etching and thermal processing techniques were employed to achieve core flaw contraction by internal stresses available in the boron sheath. After commercially and treatment induced surface flaws were removed from 203 micrometers (8 mil) fibers, the core flaw was observed to be essentially the only source of fiber fracture. Thus, fiber strain-to-failure was found to improve by an amount equal to the treatment induced contraction on the core flaw. Commercial feasibility considerations suggest as the most cost effective technique that method in which as-produced fibers are given a rapid heat treatment above 700 C. Preliminary results concerning the contraction kinetics and fracture behavior observed are presented and discussed both for high vacuum and argon gas heat treatment environments.

Dicarlo, J. A.↗
NASA NTRS1977

Characterization, shaping, and joining of SiC/superalloy sheet for exhaust system components

Hafnium carbide was shown to be virtually inert when in contact with silicon carbide and Waspaloy for at least 200 hr at 1093 C (2000 F). Extensive interaction was noted with other superalloys such as HA-188. A continuous CVD HfC deposition process was developed for deposition of up to 8 microns on .14 mm (.0056 in.) SiC tungsten core filament at rates as high as .6 m/min. The rate can be increased by increasing the length of the reactor and the output of the power supply used in resistive heating of the filament substrate. The strength of HfC coated filament varies with thickness in a Griffith-like manner. This strength reduction was greater for HfC coatings than for tungsten coatings, presumably because of the greater ductility of tungsten.

Cornie, J. A.↗
NASA NTRS1977

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth is investigated. An existing RTR apparatus is to be upgraded to its full capabilities and operated routinely to investigate and optimize the effects of various growth parameters on growth results. A new RTR apparatus was constructed to incorporate increased capabilities and improvements over the first apparatus and to be capable of continuous growth. New high power lasers were implemented and this led to major improvements in growth velocity -- 4 inch/min. growth has been demonstrated. A major step in demonstration of the full feasibility of the RTR process is reported in the demonstration of RTR growth from CVD polyribbon rather than sliced polyribbon ingots. Average solar cell efficiencies of greater than 9% and a best cell efficiency of 11.7% are reported. Processing was shown to provide a substantial improvement in material minority carrier diffusion length. An economic analysis is reported which treats both the polyribbon fabrication and RTR processes.

Gurtler, R. W.↗
NASA NTRS1978

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area sheet task of the low-cost solar array project

A new calculation of the effects of thermal stresses during growth on silicon ribbon quality is reported. Thermal stress distributions are computed for ribbon growth under a variety of temperature profiles. A growth rate of 55 cu cm/min with a single ribbon was achieved. The growth of RTR ribbon with a fairly uniform parallel dendritic structure was demonstrated. Results with two approaches were obtained for reducing the Mo impurity level in polycrystalline feedstock. Coating the Mo substrate with Si3N4 does not effect thermal shear separation of the polyribbon; this process shows promise of improving cell efficiency and also increasing the useful life of the molybdenum substrate. A number of solar cells were fabricated on RTR silicon grown from CVD feedstock.

Baghdadi, A.↗
NASA NTRS1979

Some properties of an advanced boron fiber

An advanced coreless boron fiber exhibits tensile strengths which are more than twice that of the normal CVD B/W fibers. The coreless fiber is made by the chemical removal of the tungsten boride core exposed by splitting the as-grown fiber. The easily splittable fiber is made by the chemical vapor deposition of boron on a larger than usual tungsten substrate. It is expected that the ease of splitting is related to residual stresses in these fibers. Measurements of the axial residual stresses in both the normal and the splittable fibers are presented and the results compared. Differences in these stresses are discussed in connection with the ease of splitting in the splittable fibers.

Behrendt, D. R.↗
NASA NTRS1978

The Array Automated Assembly Task for the Low Cost Solar Array Project, Phase 2

During the program a process sequence was proposed and tested for the fabrication of dendritic welb silicon into solar modules. This sequence was analyzed as to yield and cost and these data suggest that the price goals of 1986 are attainable. Specifically, it was shown that a low cost POCL3 is a suitable replacement for the semiconductor grade, and that a suitable CVD oxide can be deposited from a silane/air mixture using a Silox reactor. A dip coating method was developed for depositing an antireflection coating from a metalorganic precursor. Application of photoresist to define contact grids was made cost effective through use of a dip coating technique. Electroplating of both Ag and Cu was shown feasible and cost effective for producing the conductive metal grids on the solar cells. Laser scribing was used to separate the cells from the dendrites without degradation. Ultrasonic welding methods were shown to be feasible for interconnecting the cells. A study of suitable low cost materials for encapsulation suggest that soda lime glass and phenolic filled board are preferred.

Campbell, R. B.↗
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS1979

Some properties of an advanced boron fiber

An advanced coreless boron fiber has exhibited tensile strengths which are more than twice that of the normal CVD B/W fibers. The coreless fiber is made by the chemical removal of the tungsten boride core exposed by splitting the as-grown fiber. The easily splittable fiber is made by the chemical vapor deposition of boron on a larger than usual tungsten substrate. It is expected that the ease of splitting is related to residual stresses in these fibers. Measurements of the axial residual stresses in both the normal and the splittable fibers are presented and the results compared. Differences in these stresses are discussed in connection with the ease of splitting in the splittable fibers.

Behrendt, D. R.↗
NASA NTRS1979

Experimental studies of the formation/deposition of sodium sulfate in/from combustion gases

An optical polarization (ellipsometric) technique was developed for measuring rapidly growing and evaporating transparent liquid condensate films (e.g., boric oxide) on solid surfaces exposed to combustion product gases. Results for the B2O3 deposition rate from BCl3-seeded propane/air flames are shown to agree well with the results of earlier interference measurements, and also with theoretical CVD predictions. Evaporation rates (from platinum ribbons into seeded propane air flames) are estimated using the polarization technique. It appears that, compared with the interference method, the polarization technique places less stringent requirements on surface quality, which may justify the added optical components needed for such measurements. It is concluded that the complementary optical methods of polarization (ellipsometry) and interference hold considerable promise for application to the rapid measurement of condensation and evaporation rates in high temperature (e.g., combustion product) environments.

Rosner, D. E.↗
NASA NTRS1978

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗
NASA NTRS1978

Characterization and properties of controlled nucleation thermochemical deposited /CNTD/ silicon carbide

Results are presented for an investigation designed to characterize the microstructure of controlled nucleation thermomechanical deposition (CNTD) produced SiC material with respect to grain structure, stoichiometry, phase analysis, etc., and to evaluate the room-temperature and high-temperature fracture and oxidation behavior. By using the CNTD process, ultrafine-grained SiC is deposited on tungsten wires as substrates, with superior surface smoothness and without the macrocolumnar growth commonly observed in conventional CVD materials. The results suggest that the high-purity, fully dense, and stable grain size SiC material produced by CNTD shows potential for high-temperature structural applications, provided that pertinent problems are resolved.

Dutta, S.↗
NASA NTRS1979

Potential for improved silicon ribbon growth through thermal environment control

The Ribbon-to-Ribbon (RTR) process for growth of silicon ribbon is described. This process involves the fabrication of a microcrystalline ribbon of silicon and subsequent grain size enhancement through a laser recrystallization process. The microribbon is obtained from a Thermal Expansion Shear Separation (TESS) process which allows a CVD layer of silicon to be separated from a temporary molybdenum substrate. Efforts to achieve increased solar cell efficiencies and higher area production rates have been problematical. Furnaces, which are necessary for thermal stress control, have been shown to contribute contamination to substrates resulting in degraded efficiencies. Recent results with a new furnace design indicate efficiencies in excess of 9% will be routine. Limitations to area throughput arise due to fundamental linear velocity limitations and width limitations necessary to prevent the occurrence of thermal buckling. Calculations are reported which show the influence of thermal profile on buckling tendencies, and a proposed electron beam technique is considered which promises high throughput with minimal buckling.

Gurtler, R. W.↗
NASA NTRS1982

Ultra-Thin-Film GaAs Solar Cells

Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

Wang, K. L.↗