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At least 487 records · Page 27

Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid

Solid-state DC transformer to integrate low-voltage DC (LVDC) microgrid, wind turbine (WT) generator, photovoltaic (PV), and energy storage (ES) into medium-voltage (MV) direct-current (MVDC) distribution grids is attractive. This paper proposes current-source DC solid-state transformer (SST) for MVDC collection system in WT, PV, and ES farms or as an interface between the MVDC grid and the LVDC microgrid. Compared to conventional current-source converter (CSC) based SSTs, a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the DC-link current path. Importantly, the proposed switch reduction scheme is generic and can be applied to the DC ports of DC-AC, AC-DC, or DC-DC hard-switching or soft-switching CSC-based SSTs. Based on this scheme, the proposed current-source DC SSTs are derived, which have reduced electrolytic-capacitor-less DC-link. The proposed DC SSTs also achieve single-stage isolated DC-DC or DC-AC conversion, full-range zero-voltage switching (ZVS) for main switches, zero-current switching (ZCS) for resonant switches, and controlled dv/dt. The proposed DC SSTs, operating principles, predictive control method, the ZVS, and the controlled dv/dt under voltage buck-boost ranges are verified with MV simulations and an experimental prototype based on SiC MOSFETs, diodes, and a nanocrystalline transformer.

14 SOLAR ENERGY↗

Comparison of CCM- and CRM-Based Boost Parallel Active Power Decoupler for PV Microinverter

Single-phase inverter or rectifier systems often make use of an active power decoupler (APD) to balance the mismatch between constant dc power and fluctuating ac power. This article deals with the comparison of continuous conduction mode (CCM) and critical conduction mode (CRM) operation-based design of a parallel boost-type APD for photovoltaic microinverter applications. From a design perspective, multiobjective analysis of efficiency, volume, and cost is explored within a decision space including planar inductors, gallium nitride based devices, film capacitors, switching frequency, and modulation (CCM vs. CRM). The theoretical study analyzes all possible design configurations within CCM and CRM and identifies Pareto-optimal designs, from which the selected CRM design can achieve reduced system volume and lower cost with the use of smaller inductor core, while operating with similar California Energy Commission efficiency drop as the selected CCM design. From a control perspective, a pulsewidth modulation based control strategy is proposed to implement closed-loop CRM modulation that does not rely on zero-crossing detection. Furthermore, closed-loop systems are designed for the optimal CCM and CRM realizations, and the final system characteristics are compared. Experimental results, obtained using two separate 40-V, 400-W hardware prototypes for CCM and CRM, are presented to verify the analyses.

42 ENGINEERING↗

Predictive Direct DC-Link Control for 7.2 kV Three-Port Low-Inertia Solid-State Transformer With Active Power Decoupling

Promising for applications including renewable energy and electric vehicle fast charging, a medium-voltage (MV) solid-state transformer (SST) typically has multiple modules series stacked, which requires the modules to be single phase. One critical issue of the single-phase SST is the double-line-frequency power ripple. Traditionally, large passives are used to buffer the ripple, resulting in significantly increased volume and cost. This article for the first time proposes active power decoupling (APD) for the SST and a predictive direct DC-link control method, using a current-source single-stage SST as an example. An electrolytic capacitor-less buffer port is used to absorb the ripple, which tolerates up to a 30% voltage ripple for small capacitance. The APD SST control is challenging. First, the current-source SST realizes isolation, DC link, and multiport in a single stage. Second, different from conventional SSTs or APD converters, the low-inertia DC link in this SST has a 40% switching ripple, which is difficult to stabilize. To address the control challenge, a direct DC-link control architecture and a predictive control method are proposed. Simulation and experimental results verify the proposed control method on an MV SiC modular soft-switching solid-state transformer (M-S4T) prototype. Here, the proposed APD reduces the SST volume by 53.8%. Importantly, the proposed concept is not limited to the M-S4T but is generic to other SSTs or APD converters.

14 SOLAR ENERGY↗

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

42 ENGINEERING↗

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A Compact, Single Stage, >1 kV Medium-Voltage Line Impedance Stabilization Network

This paper presents the design of a single-phase, single-stage line impedance stabilization network (LISN) for medium-voltage (MV) applications. More than 1 kV rated widebandgap (WBG) power semiconductor switches are increasingly utilized in new, emerging power electronics energy systems to improve power density and efficiency. However, due to inherently fast-switching speeds, WBG switch modules emit considerable electromagnetic interference (EMI) (e.g., common mode (CM) or differential mode (DM)). State-of-the-art offers standardized LISN solutions to validate and certify the new energy system for electromagnetic compatibility (EMC). However, most are for low voltage applications (i.e., < 1 kV). MV LISNs (i.e., > 1 kV) are rare until recently and literature does not provide sufficient guidelines for designing and characterizing such devices. It has been a critical challenge for many scientists and engineers to reliably certify the emerging MV energy systems (e.g., electric ships and aircraft). This paper addresses such a technology gap. Specifically, a CISPR 16-1-2 compliant 50Ω/50μH LISN with 1.5kV, 75A and 30MHz measurement capability has been proposed. Detailed performance study versus non-linear parasitic parameters variations in MV inductors and capacitors have been done. Based on new understandings, novel techniques to intuitively mitigate unwanted parasitic have been proposed to develop the proposed LISN successfully. Thorough characterization of important LISN parameters are presented and factors influencing them are analyzed. A rigorous analysis, experimental tests, and in-depth comparisons over state-of-the-art have been made to validate the effectiveness. This is done through the state-of-the-art 300kVA MV EMI testbed.

42 ENGINEERING↗

Optimal Planning and Operation of Multi-Frequency HVac Transmission Systems

Low-frequency high-voltage alternating-current (LF-HVac) transmission scheme has been recently proposed as an alternative solution to conventional 50/60-Hz HVac and high-voltage direct-current (HVdc) schemes for bulk power transfer. This paper proposes an optimal planning and operation for loss minimization in a multi-frequency HVac transmission system. In such a system, conventional HVac and LF-HVac grids are interconnected using back-to-back (BTB) converters. The dependence of system MW losses on converter dispatch as well as the operating voltage and frequency in the LF-HVac is discussed and compared with that of HVdc transmission. Based on the results of the loss analysis, multi-objective optimization formulations for both planning and operation stages are proposed. The planning phase decides a suitable voltage level for the LF-HVac grid, while the operation phase determines the optimal operating frequency and power dispatch of BTB converters, generators, and shunt capacitors. A solution approach that effectively handles the variations of transmission line parameters with the rated voltage and operating frequency in the LF-HVac grid is proposed. The proposed solutions of the planning and operation stages are evaluated using a multi-frequency HVac system. The results show a significant loss reduction and improved voltage regulation during a 24-hour simulation.

Nguyen, Quan H.↗

Voltage positioning using co-optimization of controllable grid assets in radial networks

With increasing penetration of solar PV, some distribution feeders are experiencing highly variable net-load flows and even reverse flows. To optimize distribution systems under such conditions, the scheduling of mechanical devices, such as OLTCs and capacitor banks, needs to take into account forecasted solar PV and actual grid conditions. However, these legacy switching assets are operated on a daily or hourly timescale, due to the wear and tear associated with mechanical switching, which makes them unsuitable for real-time control. Therefore, there is a natural timescale- separation between these slower mechanical assets and the responsive nature of inverter-based resources. In this paper, we present a network admissible convex formulation for holistically scheduling controllable grid assets to position voltage optimally against solar PV. An optimal hourly schedule is presented that utilizes mechanical resources to position the predicted voltages close to nominal values, while minimizing the use of inverter-based resources (i.e., DERs), making them available for control at a faster time-scale (after the uncertainty reveals itself). A convex, inner approximation of the OPF problem is adapted to a mixed-integer linear program that minimizes voltage deviations from nominal (i.e., maximizes voltage margins). Here, the resulting OPF solution respects all the network constraints and is, hence, robust against modeling simplifications. Simulation based analysis on IEEE distribution feeders validates the approach.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A Data-Driven Voltage Control Strategy for Distribution Grids With Distributed Energy Resources

Traditionally, distribution system control approaches have been model-based. The deployment of advanced metering infrastructure has provided electric utilities with the capability of data-driven control with real-time measurements. The shift from model-based to data-driven control represents a significant advancement in the management of distribution systems, offering a more adaptive approach to system control because of the ability to dynamically adapt to changing conditions without the need for system modeling. Here, in this paper, a behavioral data-driven control method is developed to provide voltage regulation to an actual distribution system by controlling the legacy devices and distributed energy resource (DER) assets. The studied distribution system has a load tap changer and three capacitor banks as the legacy devices and photovoltaic systems as the DERs. The performance of the proposed control algorithm is validated using a laboratory test bed setup considering multiple scenarios. The results show that the proposed control achieved 99% voltage regulation.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Building Large-Scale U.S. Synthetic Electric Distribution System Models

Rapid increases in distributed energy resources on distribution systems are prompting research efforts to improve and evaluate electric power distribution algorithms; however, there is a shortage of realistic, large-scale, U.S.-style test systems for the evaluation of such advanced algorithms. Some available tools to build large-scale test systems are of European style, and their application to studies focused on the United States might not be desirable given very different characteristics between the European and U.S. distribution designs. Motivated by this need, this paper develops detailed algorithms to build large-scale U.S. distribution systems and incorporates them in a new Reference Network Model, RNM-US. The approach starts with information from street maps and a catalog with electric equipment that includes power lines, transformers, voltage regulators, capacitors, and switching devices. The paper presents the algorithms through an illustrative case study of the different steps that comprise the process of building a synthetic distribution grid. Finally, the paper presents a medium- and a large-scale data set covering 10 million electrical nodes and 120,000 km of power lines, demonstrating the applicability of the proposed method to build very large-scale synthetic distribution systems.

27 ARPA - Advanced Research Projects Agency-Energy↗

Deep Reinforcement Learning Based Volt-VAR Optimization in Smart Distribution Systems

This paper develops a model-free volt-VAR optimization (VVO) algorithm via multi-agent deep reinforcement learning (DRL) in unbalanced distribution systems. This method is novel since we cast the VVO problem in distribution networks to an intelligent deep Q-network (DQN) framework, which avoids solving a specific optimization model directly when facing time-varying operating conditions in the systems. We consider statuses/ratios of switchable capacitors, voltage regulators, and smart inverters installed at distributed generators as the action variables of the agents. A delicately designed reward function guides these agents to interact with the distribution system, in the direction of reinforcing voltage regulation and power loss reduction simultaneously. The forward-backward sweep method for radial three-phase distribution systems provides accurate power flow results within a few iterations to the DRL environment. The proposed method realizes the dual goals for VVO. We test this algorithm on the unbalanced IEEE 13-bus and 123-bus systems. Numerical simulations validate the excellent performance of this method in voltage regulation and power loss reduction.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Deep Reinforcement Learning Enabled Physical-Model-Free Two-Timescale Voltage Control Method for Active Distribution Systems

Active distribution networks are being challenged by frequent and rapid voltage violations due to renewable energy integration. Conventional model-based voltage control methods rely on accurate parameters of the distribution networks, which are difficult to achieve in practice. This paper proposes a novel physical-model-free two-timescale voltage control framework for active distribution systems. To achieve fast control of PV inverters, the whole network is first partitioned into several subnetworks using voltage-reactive power sensitivity. Then, the scheduling of PV inverters in the multiple sub-networks is formulated as Markov games and solved by a multi-agent soft actor-critic (MASAC) algorithm, where each subnetwork is modeled as an intelligent agent. All agents are trained in a centralized manner to learn a coordinated strategy while being executed based on only local information for fast response. For the slower time-scale control, OLTCs and switched capacitors are coordinated by a single agent-based SAC algorithm using the global information with considering control behaviors of the inverters. Particularly, the two-level agents are trained concurrently with information exchange according to the reward signal calculated from the data-driven surrogate model. Comparative tests with different benchmark methods on IEEE 33-and 123-bus systems and 342-node low voltage distribution system demonstrate that the proposed method can effectively mitigate the fast voltage violations and achieve systematical coordination of different voltage regulation assets without the knowledge of accurate system model.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Microgrid Service Restoration Incorporating Unmonitored Automatic Voltage Controllers and Net Metered Loads

Islanded microgrids may experience voltage and frequency instability due to uncontrolled state changes of voltage regulation devices and inaccurate demand forecasts. Uncontrolled state changes can occur if optimal microgrid restoration and dispatch algorithms, used for generating control commands for distributed energy resources, do not incorporate the behavior of automatic controllers of voltage regulation devices. Inaccurate demand forecasts may be encountered since post-outage demand of behind-the-meter net metered (NM) loads can vary significantly from their historical NM profiles. Here, this paper proposes an optimization formulation which allows optimal control of voltage regulators and capacitor banks without remote control and communication capabilities. A generalized demand model for NM loads is proposed which incorporates the cold load pickup phenomenon and their time varying post-outage demand in accordance with the IEEE 1547 standard. The time dependent optimal control formulation and the NM demand model are integrated in a sequential microgrid restoration algorithm by linearization of the involved logic propositions. A detailed case study on the unbalanced IEEE 123-node test system in OpenDSS validates the effectiveness of the proposed approach.

30 DIRECT ENERGY CONVERSION↗

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

42 ENGINEERING↗

Oxygen vacancy migration and impact on high voltage DC polarization in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3

Electrical polarization and defect transport are examined in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3 , an attractive capacitor material for high power electronics. Oxygen vacancies are suggested to be the majority charge carrier at or below 250°C with a grain conduction hopping activation energy of 0.97 eV and 0.92 eV for thermally stimulated depolarization current (TSDC) and impedance spectroscopy measurements, respectively. At higher temperature, thermally generated electronic conduction with an activation energy of 1.6 eV is dominant. Significant oxygen vacancy concentration is indicated (up to ~1%) due to cation vacancy formation (i.e., acceptor defects) from observed Bi (and likely Zn) volatility. Oxygen vacancy diffusivity is estimated to be 10 -12.8 cm 2 /s at 250°C. Low diffusivity and high activation energies are indicative of significant defect interactions. Dipolar oxygen vacancy defects are also indicated, with an activation energy of 0.59 eV from TSDC measurements. In conclusion, the large oxygen vacancy content leads to a short lifetime during high voltage (30 kV/cm), high temperature (250°C) direct current (DC) electrical measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗

Operando study of HfO 2 atomic layer deposition on partially hydroxylated Si(111)

The introduction of atomic layer deposition (ALD), to the microelectronics industry has introduced a large number of new possible materials able to be deposited in layers with atomic thickness control. One such material is the high-κ oxide HfO 2 ; thermally stable and ultrathin HfO 2 films deposited by ALD are a significant contender to replace SiO 2 as the gate oxide in capacitor applications. We present a mechanistic study of the first deposition cycle of HfO 2 on the Si(111) surface using tetrakis(dimethylamido) hafnium (TDMAHf) and water as precursors using operando ambient pressure x-ray photoelectron spectroscopy. Here, we show that the hydroxylation of the clean Si(111) surface by residual water vapor, resulting in a 0.3 monolayer coverage of hydroxyls, leads to instantaneous full surface coverage of TDMAHf. The change in the atomic ratio of Hf to C/N found during the first deposition half-cycle, however, does not match the assumed immediate ligand loss through reaction with surface hydroxyls. One would expect an immediate loss of ligands, indicated by a Hf:N ratio of approximately 1:3 as TDMAHf deposits onto the surface; however, a Hf:N ratio of 1:3.6 is observed. The partial hydroxylation on the Si(111) surface leads to binding through the TDMAHf ligand N atoms resulting in both N and CH 3 being found remaining on the surface post water half-cycle. Although there is evidence of ligand exchange reactions occurring at Si–OH sites, it also seems that N binding can occur on bare Si, highlighting the complexity of the substrate/precursor reaction even when hydroxyls are present. Moreover, the initial low coverage of Si–OH/Si–H appears to severely limit the amount of Hf deposited, which we hypothesize is due to the specific geometry of the initial arrangement of Si–OH/Si–H on the rest- and adatoms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗