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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗
NASA NTRS1978

Radiative recombination of complex ions

The rates of radiative capture by atomic systems is computed for the first four ionization stages of the abundant elements C, N, O, Ne, Mg, Si, S, and Ar. A simple prescription is given for calculating the rates for systems in higher ionization stages. Results for capture to atomic helium are also given. In the general case, recent calculations of photoionization cross sections have been used to compute capture rates to levels of the ground-state configuration of the recombined species. Captures to other levels of the valence shell and to the higher shells are evaluated using hydrogenic formulae but with a correction factor which takes into account the nonhydrogenic nature of these states. This correction factor is due to the incomplete shielding by the inner electrons and represents essentially an effective charge for the recombining ion; it is determined semiempirically from an appropriate weighting of values derived from the observed level structure for each species. In some cases, for the capture to neutral atomic systems, its application increases the resulting computed recombination rate by a significant amount (about 50%). Computed recombination rates are tabulated for the four ionization stages at an electron temperature of 10,000 K and for the first stage at 100 K. A convenient procedure is outlined for evaluating the rates at other temperatures in the general neighborhood of these values.

Gould, R. J.↗
DOE OSTI2022

Transient quantum beatings of trions in hybrid organic tri-iodine perovskite single crystal

Utilizing the spin degree of freedom of photoexcitations in hybrid organic inorganic perovskites for quantum information science applications has been recently proposed and explored. However, it is still unclear whether the stable photoexcitations in these compounds correspond to excitons, free/trapped electron-hole pairs, or charged exciton complexes such as trions. Here we investigate quantum beating oscillations in the picosecond time-resolved circularly polarized photoinduced reflection of single crystal methyl-ammonium tri-iodine perovskite (MAPbI 3 ) measured at cryogenic temperatures. We observe two quantum beating oscillations (fast and slow) whose frequencies increase linearly with B with slopes that depend on the crystal orientation with respect to the applied magnetic field. We assign the quantum beatings to positive and negative trions whose Landé g-factors are determined by those of the electron and hole, respectively, or by the carriers left behind after trion recombination. These are $g^{e}_{[001]}$ = 2.52 and $g^{e}_{[1\bar10]}$ = 2.63 for electrons, whereas |$g^{h}_{[001]}$| = 0.28 and |$g^{h}_{[1\bar10]}$| = 0.57 for holes. The obtained g-values are in excellent agreement with an 8-band K.P calculation for orthorhombic MAPbI3. Using the technique of resonant spin amplification of the quantum beatings we measure a relatively long spin coherence time of ~ 11 (6) nanoseconds for electrons (holes) at 4 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Trap-Assisted Auger-Meitner Recombination from First Principles

Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multiphonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here, we highlight the role of trap-assisted Auger-Meitner (TAAM) recombination and present a first-principles methodology to determine TAAM rates due to defects or impurities in semiconductors or insulators. We assess the impact on efficiency of light emitters in a recombination cycle that may include both TAAM and carrier capture via MPE. We apply the formalism to the technologically relevant case study of a calcium impurity in InGaN, where a Shockley-Read-Hall recombination cycle involving MPE alone cannot explain the experimentally observed nonradiative loss. We find that, for band gaps larger than 2.5 eV, the inclusion of TAAM results in recombination rates that are orders of magnitude larger than recombination rates based on MPE alone, demonstrating that TAAM can be a dominant nonradiative process in wide-band-gap materials. Furthermore, our computational formalism is general and can be applied to the calculation of TAAM rates in any semiconducting or insulating material.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Harnessing Intermolecular Interactions to Promote Long-Lived Photoinduced Charge Separation from Copper Phenanthroline Chromophores

In this study, facilitating photoinduced electron transfer (PET) while minimizing rapid charge-recombination processes to produce a long-lived charge-separated (CS) state represents a primary challenge associated with achieving efficient solar fuel production. Natural photosynthetic systems employ intermolecular interactions to arrange the electron-transfer relay in reaction centers and promote a directional flow of electrons. This work explores a similar tactic through the synthesis and ground- and excited-state characterization of two Cu(I)bis(phenanthroline) chromophores with homoleptic and heteroleptic coordination geometries and which are functionalized with negatively charged sulfonate groups. The addition of sulfonate groups enables solubility in pure water, and it also induces assembly with the dicationic electron acceptor methyl viologen (MV 2+ ) via bimolecular, dynamic electrostatic interactions. The effect of the sulfonate groups on the ground- and excited-state properties was evaluated by comparison with the unsulfonated analogues in 1:1 acetonitrile/water. The excited-state lifetimes for all sulfonated complexes are similar to what we expect from previous literature, with the exception of the sulfonated heteroleptic complex whose metal-to-ligand charge-transfer (MLCT) lifetime in water has two components that are fit to 10 and 77 ns. For the sulfonated complexes, we detected reduced MV +$\bullet$ in both solvent environments following MLCT excitation, but control measurements in 1:1 acetonitrile/water with the unsulfonated analogues showed no PET to MV 2+ , indicating that electrostatically driven supramolecular assemblies of the sulfonated complexes with MV 2+ facilitate the observed PET. Additionally, the strength of the intermolecular interactions driving the formation of these assemblies changes drastically with the solvent environment. In 1:1 acetonitrile/water, PET occurred from both sulfonated complexes with quantum yields (Φ ET ) of 2-3% but increased to a remarkable 98% for the sulfonated heteroleptic complex with a 3 μs CS-state lifetime in water.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗
NASA NTRS1988

Recombination line intensities for hydrogenic ions. II - Case B calculations for C VI, N VII and O VIII

The intensities of recombination lines formed in extended, optically thim, photoionized plasmas such as those found in PN, H II regions, and winds of certain hot stars are an important source of information on chemical abundances and can sometimes provide estimates of electron temperature. In this paper, the intensities of the recombination lines of C VI, N VII, and O VIII are calculated, accounting for both electron and heavy particle collisions and assuming case B of Baker and Menzel. The computational procedure is explained. The intensities of lines formed by transitions n(u) - n(l) are tabulated for n(u) of 50 or less, n(l) of 29 or less, at log N(e) = 4(1)13 and 10 values of electron temperature in the interval 10,000 K to 500,000 K.

Storey, P. J.↗
DOE OSTI2026

Leveraging Multiproton-Coupled Electron Transfer to Improve Ir(III) Photocatalyst Efficiency

In photoredox reactions, charge recombination (CR) limits quantum yields, hindering the efficient conversion of light energy into catalytic activity. To address this, we drew inspiration from redox relays in photosystem II (PSII) and developed a new series of iridium(III) complexes featuring covalently attached benzimidazole-phenol-pyridine (BIP-Py) groups to facilitate intramolecular multiproton-coupled electron transfer (MPCET). Herein, we evaluate the effects of MPCET through an extended and well-defined hydrogen-bond network to improve photocatalytic activity and mitigate rapid charge recombination. Infrared spectroelectrochemistry reveals pyridine protonation upon phenol oxidation, while visible spectroelectrochemistry and transient absorption spectroscopy confirm the electro- and photochemical formation of chargeseparated states (CSS) involving oxidized BIP, resulting from intramolecular proton-coupled electron transfer (PCET). The application of the BIP-Py platform in a photocatalytic Nhydroxyphthalimide ester reduction reaction resulted in a ∼106-fold reduction in CR rate and a quantum yield enhancement of up to 157%. Our findings suggest that incorporating MPCET-based redox relays into photocatalyst frameworks is an effective strategy to enhance the efficiency of photocatalytic systems.

Catalysts↗
DOE OSTI2023

Strain effects on Auger–Meitner recombination in silicon

We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger–Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. In conclusion, our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon and can be leveraged to improve the efficiency of silicon devices.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

Sah, C.-T.↗
DOE OSTI2020

Destructive reverse bias pinning in perovskite/silicon tandem solar modules caused by perovskite hysteresis under dynamic shading

In this work, we demonstrate how perovskite hysteresis can result in permanent reductions in power output in perovskite/silicon tandem modules—including irreversible hotspot-induced damage—from only brief periods of shading. We show that reverse bias events in which a perovskite cell is biased above a threshold voltage—which in this work we find to be as low as –1.1 V—produces a temporary reduction in power output that is of sufficient magnitude to keep the cell pinned in reverse bias after the shading event ends. As a hysteretic phenomena, this crucial failure mode may be overlooked by static models of perovskite-based solar cells. Higher reverse bias voltages exacerbate the temporary reduction in short-circuit photocurrent, which is also sensitive to the level of illumination under reverse bias. Numerical device modelling demonstrates that this effect is consistent with our understanding of perovskite hysteresis as a consequence of mobile ion-electron coupling controlling rates of non-radiative recombination over time. Measurements of the dynamic response of single-junction perovskite cells are extrapolated to two-terminal and four-terminal perovskite/silicon tandem module modelling. We validate these models with measurements from an equivalent electronic circuit that represents a two-terminal perovskite–silicon tandem mini module. Two module-level solutions are discussed that address this issue, which includes increasing the number of bypass diodes and choosing better suited silicon bottom cells with higher shunter resistance in two-terminal tandem modules.

14 SOLAR ENERGY↗
DOE OSTI2022

Nanostructures evolution assessment and spectroscopic properties modification induced by electronic energy loss in KTaO 3 crystal

Modifications of micro/nanostructure and photoelectric properties under swift ion irradiation (645 MeV Xe 35+ ) of KTaO 3 crystal with varying electronic energy losses (7.2–31.4 keV/nm) and ion velocities (0.18–5.00 MeV/u) have been studied by combining experimental and calculated approaches. The i-TS calculations combined with molecular dynamics simulations are compared with the experimental observations, revealing the inner track fine structures from individual spherical defects to continuous ion tracks with core–shell morphologies, and a quantitative relationship, including the melting (0.42 eV/atom), damage (0.75 eV/atom), and amorphous (1.71 eV/atom) thresholds, is established to successfully predict the inner disorder/amorphous proportions and track damage morphologies. The surface nanostructures of nanohillocks (isolated or partial overlaps) and nanopits (serious overlaps) directly depend on the combined action of the deposited potential and kinetic energies of incident ions, which induce local melting and sublimation in the near-surface region. Owing to the decreased recombination and the increased separation efficiency between electrons and holes, the higher photogenerated charge carrier mobility enhanced the photocurrent effect, further optimizing the photoconductivity performance in Xe 35+ -irradiated KTaO 3 . Therefore, controlled defect engineering using the ion irradiation technique, as an effective strategy, could design tailored nanostructure systems and regulate photoelectric properties, further promoting the development of novel technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Study of Photocarriers Lifetime Distribution in a-Si:H via Magneto-photoconductivity and Magneto-Photoluminescence

In this report the magneto-photoluminescence (MPL) of localized photocarriers and magneto-photoconductivity (MPC) of delocalized photocarriers in amorphous hydrogenated silicon (a-Si:H) films and devices, respectively, are investigated. Both responses are caused by mixing of spin sublevels in the photogenerated electron–hole (e–h) pairs that alters their recombination and dissociation rates. The spin mixing occurs by a combination of hyperfine interaction (HFI) between spin ½ photocarriers and neighboring 29 Si and 1 H nuclei, and the Δg mechanism which originates from a difference in the Landé g-factors of electrons and holes. The existing disorder in a-Si:H films leads to dispersive field response that is described by a unique dispersive parameter α < 1, from which the e–h lifetime distribution, g(τ) is obtained. The mean e–h lifetime is found to be ≈12 ns for the high-energy, relatively delocalized photocarriers generating the photocurrent, as compared to ≈200 ps for the lower energy, trapped e–h pairs which yield photoluminescence. The MPL(B) and MPC(B) responses in a-Si:H subjected to prolonged illumination that causes Staebler–Wronski type degradation, and subsequent annealing are studied. The illumination-induced photocarrier localization that enhances the HFI component is found, which dramatically decreases upon annealing; this method can assess optoelectronic device degradation.

Staebler-Wronski effect↗
NASA NTRS1976

Statistical equilibrium calculations for silicon in early-type model stellar atmospheres

Line profiles of 36 multiplets of silicon (Si) II, III, and IV were computed for a grid of model atmospheres covering the range from 15,000 to 35,000 K in effective temperature and 2.5 to 4.5 in log (gravity). The computations involved simultaneous solution of the steady-state statistical equilibrium equations for the populations and of the equation of radiative transfer in the lines. The variables were linearized, and successive corrections were computed until a minimal accuracy of 1/1000 in the line intensities was reached. The common assumption of local thermodynamic equilibrium (LTE) was dropped. The model atmospheres used also were computed by non-LTE methods. Some effects that were incorporated into the calculations were the depression of the continuum by free electrons, hydrogen and ionized helium line blocking, and auto-ionization and dielectronic recombination, which later were found to be insignificant. Use of radiation damping and detailed electron (quadratic Stark) damping constants had small but significant effects on the strong resonance lines of Si III and IV. For weak and intermediate-strength lines, large differences with respect to LTE computations, the results of which are also presented, were found in line shapes and strengths. For the strong lines the differences are generally small, except for the models at the hot, low-gravity extreme of our range. These computations should be useful in the interpretation of the spectra of stars in the spectral range B0-B5, luminosity classes III, IV, and V.

Kamp, L. W.↗
DOE OSTI2026

Energy density driven ultrafast electronic excitations in a cuprate superconductor

Controlling nonequilibrium dynamics in quantum materials requires ultrafast probes with spectral selectivity. We report femtosecond reflectivity measurements on the cuprate superconductor Bi 2⁢ Sr 2⁢ CaCu 2 ⁢O 8+𝛿 using free-electron laser extreme-ultraviolet (23.5–177 eV) and near-infrared (1.5 eV) pump pulses. EUV pulses access deep electronic states, while NIR light excites valence-band transitions. Despite these distinct channels, both schemes produce nearly identical dynamics: above 𝑇 𝑐 , excitations relax through fast (100–300 fs) and slower (1–5 ps) channels; below 𝑇 𝑐 , a delayed component signals quasiparticle recombination and condensate recovery. We find that when electronic excitations are involved, the ultrafast response is governed mainly by absorbed energy rather than by the microscopic nature of the excitation. In contrast, bosonic driving in the THz or midinfrared produces qualitatively different dynamics. By demonstrating that EUV excitation of a correlated superconductor yields macroscopic dynamics converging with those from optical pumping, this work defines a new experimental paradigm: FEL pulses at core-level energies provide a powerful means to probe and control nonequilibrium electronic states in quantum materials on their intrinsic femtosecond timescales. This establishes FEL-based EUV pumping as a new capability for ultrafast materials science, opening routes toward soft x-ray and attosecond studies of correlated dynamics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Theoretical studies of important processes in planetary and comet atmospheres

The dissociative recombination (DR) of the AB(+) molecular ion with an electron has been shown to be an important component in the detailed interpretation of planetary ionosphere data. A first principles theoretical approach is developed for calculating the DR cross sections and rates for AB(+) molecular ions. The calculations focus on O2(+) and N2(+) DR, and are the first to include the indirect DR mechanism (Ryberg vibrational levels below v = 0 level of ion) for a molecule larger than H2(+). The importance of electron capture width in calculating the cross sections and rates is also examined. Electron capture widths are given for all states of O2 that are of importance to DR (lowest 10 vibrational levels of ion). Knowledge of the details of dissociative recombination will be needed for interpretation of data from future interplanetary and comet atmospheric studies.

Guberman, Steven L.↗
DOE OSTI2020

Effect of an electric field on liquid helium scintillation produced by fast electrons

The dependence on applied electric field (0–40 kV/cm) of the scintillation light produced by fast electrons and α particles stopped in liquid helium in the temperature range of 0.44 K to 3.12 K is reported. For both types of particles, the reduction in the intensity of the scintillation signal due to the applied field exhibits an apparent temperature dependence. Using an approximate solution of the Debye-Smoluchowski equation, we show that the apparent temperature dependence for electrons can be explained by the time required for geminate pairs to recombine relative to the detector signal integration time. This finding indicates that the spatial distribution of secondary electrons with respect to their geminate partners possesses a heavy, non-Gaussian tail at larger separations and has a dependence on the energy of the primary ionization electron. Here, we discuss the potential application of this result to pulse shape analysis for particle detection and discrimination.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1978

On dielectronic recombination and resonances in excitation cross sections

It is found that the contribution to the dielectronic recombination rate of stabilizing transitions of the outer electron is within the 30% accuracy of the Burgess rates calculated by neglecting this process even for Delta n = 0 transitions for astrophysically important ions. Autoionization to excited levels, ignored in the Burgess procedure and shown by Jacobs et al. (1977) to be important for some ions in the calculation of the dielectronic recombination rate, is discussed with reference to the resonance excitation of some astrophysically important X-ray lines. In particular, the contribution of resonances to the excitation of several lines in the helium and neon isosequences is estimated.

Raymond, J. C.↗