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Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Laser-Induced Ultrafast Demagnetization and Spin Switching (Final Report)

The information technology revolution demands bigger and faster magnetic storage devices. The funded research focuses on a new frontier - Laser-induced ultrafast all-optical spin switching (AOS), where a single laser pulse can switch spins from one direction to another permanently, without a magnetic field, on a time scale of 1-10 picoseconds, 2-3 orders of magnitude faster than the existing technology. The funded research has successfully resolved a long-standing issue in ultrafast demagnetization whether the lattice contributes to the demagnetization. We developed a high level first-principles theory and employed a massively parallel computer to pin down the details of the physical mechanisms that are inaccessible to other methods. This unique feature allows us to compute the force on each atom in both bulk and monolayer systems. We find that it is indeed true there is a nonzero force on each atom, but the idea of vibration contribution is not crucial to our basic understanding of physics. This paves the way to future experimental, theoretical and technological developments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

First-principles and model simulation of all-optical spin reversal

All-optical spin switching is a potential trailblazer for information storage and communication at an unprecedented fast rate free of magnetic fields. However, the current wisdom is largely based on semiempirical models of effective magnetic fields and heat pulses, so it is difficult to provide high-speed design protocols for actual devices. In this paper we carry out a massively parallel first-principles and model calculation for 13 spin systems and magnetic layers, free of any effective field, to establish a simpler and alternative paradigm of laser-induced ultrafast spin reversal and to point out a path to a full-integrated photospintronic device. It is the interplay of the optical selection rule and sublattice spin orderings that underlines seemingly irreconcilable helicity-dependent and -independent switchings. Using realistic experimental parameters, we predict that strong ferrimagnets, in particular, Laves phase C15 rare-earth alloys, meet the telecommunication energy requirement of 10 fJ, thus allowing a cost-effective subpicosecond laser to switch spin in the gigahertz region.

36 MATERIALS SCIENCE↗
DOE OSTI2019

First-principles Study of Strain-Induced Magnetism in Defective Arsenene

By using first-principles calculations, we explore the influences of tensile strain on the magnetic properties of a defective arsenene monolayer with mono-vacancy and di-vacancy. Calculation results show that unstrained defective arsenene monolayers both are intrinsically nonmagnetic. However, appropriate tensile strains can induce a ferromagnetic coupling in mono-vacancy- (8%) and di-vacancy-doped systems (7%), respectively. In addition, we also discussed the physical mechanism of strain-induced magnetism emergence and predicted a possibility of magnetism appearance in the experiment. Our study may provide insight for the design of memory-switching spintronic devices with metal-free magnetism by using arsenene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Plasma response to electron energy filter in large volume plasma device

An electron energy filter (EEF) is embedded in the Large Volume Plasma Device plasma for carrying out studies on excitation of plasma turbulence by a gradient in electron temperature (ETG) described in the paper of Mattoo et al. [S. K. Mattoo et al., Phys. Rev. Lett. 108, 255007 (2012)]. In this paper, we report results on the response of the plasma to the EEF. It is shown that inhomogeneity in the magnetic field of the EEF switches on several physical phenomena resulting in plasma regions with different characteristics, including a plasma region free from energetic electrons, suitable for the study of ETG turbulence. Specifically, we report that localized structures of plasma density, potential, electron temperature, and plasma turbulence are excited in the EEF plasma. It is shown that structures of electron temperature and potential are created due to energy dependence of the electron transport in the filter region. On the other hand, although structure of plasma density has origin in the particle transport but two distinct steps of the density structure emerge from dominance of collisionality in the source-EEF region and of the Bohm diffusion in the EEF-target region. It is argued and experimental evidence is provided for existence of drift like flute Rayleigh-Taylor in the EEF plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Magnetization stability analysis of the Stoner-Wohlfarth model under a spin-polarized current with a tilted polarization

The stationary-state solutions of magnetization dynamics under a spin-polarized current that was polarized in an arbitrary direction were investigated by solving the Landau-Lifshitz-Gilbert-Slonczewski equation for a single-domain magnet. Taking into consideration the uniaxial magnetic anisotropy, the equilibrium directions of the magnetization vectors were analytically obtained by solving an algebraic cubic equation. It was found that one to three pairs of magnetization equilibrium states existed, depending on the current intensity and the direction of the spin polarization. By numerically analyzing the stabilities of these equilibrium states, the threshold switching current for the reversing the magnetic vector was obtained under different current polarization configurations, which may be useful for use in future spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180° spin switching between states. We demonstrate a previously unobserved eightfold anisotropy in magnetic SrRuO 3 monolayers by inducing a spin reorientation in (SrRuO 3 ) 1 /(SrTiO 3 ) N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial $\langle 001 \rangle$ direction ( N < 3) to eightfold $\langle 111 \rangle$ directions ( N ≥ 3). This eightfold anisotropy enables 71° and 109° spin switching in SrRuO 3 monolayers, analogous to 71° and 109° polarization switching in ferroelectric BiFeO 3 . First-principle calculations reveal that increasing the SrTiO 3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO 3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multistate device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Comparison of 22 kHz and 85 kHz 50 kW Wireless Charging System Using Si and SiC Switches for Electric Vehicle

Fast charging in transportation application requires high-power (>50 kW) operation. The overall size of wireless charging systems (WCS) must increase to meet the high-power requirement. As a result, high power systems produce more electromagnetic field (EMF) emissions. Although higher operating frequencies (85 kHz) reduce the size of inductors and capacitors, system losses tend to increase. High-power systems are traditionally investigated for 10 kHz to 22 kHz operation to reduce the switching loss in the converter, and conductive and magnetic losses in the power pad. The use of SiC MOSFETs reduces conduction and switching losses in the converter even at higher frequencies. In this paper, a comprehensive loss comparison of 50 kW wireless charging system is conducted for 85 kHz and 22 kHz operation of Si MOSFET and SiC MOSFET converters. Detailed performance indexes are compared analytically as a function of frequency and verified using FEA and PLECS. This comprehensive system level study shows that magnetic losses can be reduced significantly, and that EMF emission can be reduced by 50% by moving from 22 kHz to 85 kHz. Moreover, the system requires 50% less copper and allows a significant reduction in the size of the primary and secondary filter capacitor at 85 kHz. The results show that the system efficiency at 85 kHz can be increased by 21% compared to 22 kHz operation by using a SiC MOSFET converter.

Shahidul haque, Moinul↗
DOE OSTI2024

Picosecond volume expansion drives a later-time insulator–metal transition in a nano-textured Mott insulator

There is significant technological interest in developing ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of both electrons and associated phonons, which is possible with short-pulse photoexcitation. However, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical timescales dominated by slowly coarsening dynamics. Here, in this study, we use time-resolved X-ray diffraction and reflectivity measurements to show that the photoinduced insulator-to-metal transition in an epitaxially strained Mott insulating thin film occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, which is followed by a slower electronic evolution into a metastable nonequilibrium state. Microscopic model calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics explain the threshold behaviour and elucidate the delayed onset of the electronic phase transition. This work highlights the importance of combined electronic and structural studies in unravelling the physics of dynamic transitions and the timescales of photoinduced processes. During a photoinduced phase transition, electronic rearrangements are usually faster than lattice ones. Time-resolved measurements now show that the insulator-to-metal transition in a thin-film Mott insulator is preceded by lattice reconfiguration.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A Unified Off-Board Charging System for Integrated Wired and Wireless EV Charging

This work explores a unified off-board charger approach that enables both wired and wireless charging within a single system architecture. Instead of deploying two independent converters, the proposed configuration switches between an LLC-based operation for wired charging and an LCC-S–type operation for wireless charging by rearranging the excitation of commonly used components. With this reconfiguration, the same switch bridge, resonant elements, and magnetic coupling coils can be utilized in both modes without relying on relays or additional hardware paths. To assess the basic operation of the proposed system, PLECS circuit simulations were performed for both wired and wireless charging modes. A 3.3-kW prototype was also built, and representative experimental results for each mode confirm that the unified converter can operate properly while reducing hardware duplication.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)↗
DOE OSTI2017

State switching kinetics for quasi-one-dimensional nanosystems: Effects of Finite length and irradiation

The state switching in an extended quasi-one-dimensional material is modeled by the stochastic formation of local new-state nuclei and their subsequent growth along the system axis. An analytical approach is developed to describe the influence of defects, dividing a sample into an ensemble of finite-length segments, on its state switching kinetics. As applied to magnetic systems, the method makes it possible to calculate magnetization curves for different defect concentrations and parameters of material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Weibel instability in the field of a short laser pulse

The growth rate of Weibel instability in a plasma interacting with a high-frequency pulse with a duration less or comparable with the electron mean free time is determined. The growth rate is shown to decrease with decreasing pulse duration. It is found that instability can develop after the short pulse is switched off and the generated magnetic field no longer affects electron motion in the high-frequency field.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

A Disruptive Approach to Electric Vehicle Power Electronics Final Report

This project developed and demonstrated a new power electronics technology for electric vehicle drivetrains, that achieved significant improvements in power density and efficiency over standard drive cycles, relative to the commercial state of the art. In particular, the prototype measured loss and efficiency curves demonstrated a reduction in total loss over the US EPA US06 drive cycle by a factor of four. Similar reductions are observed for urban (UDDS) and highway (HWFET) drive cycles. Further, the project demonstrated a significant reduction in the total film capacitor requirements, by over an order of magnitude; this was achieved through fundamental improvements in converter circuit topologies. These nonincremental technology advances can lead to significant improvements in temperature rise, reliability, cost, and cooling system size and weight. These results were achieved through a new proposed composite converter architecture, and were demonstrated in a boost-type system similar to that employed by Toyota, Ford, and Honda. A 30 kW silicon prototype achieved a US06 average efficiency of 97.5%, which represents a reduction in average loss by a factor of approximately four relative to the 92.5% average efficiency of the commercial state of the art. A silicon carbide prototype achieved similar efficiency, while also achieving power densities of 23 kW/L (volumetric) and 20 kW/kg (gravimetric) in a boost dc-dc system including magnetics and film capacitors. This was achieved with a SiC switching frequency of 240 kHz, which allowed employment of planar magnetics. These power densities are roughly four times better than the commercial state of the art, and significantly exceed the DOE APEEM 2020 goals. In addition to the composite boost system, a SiC inverter was demonstrated at the 800 V 30 kW level. This inverter was demonstrated driving a permanent magnet machine over the US 06 drive cycle. The replacement of 1200 V Si IGBTs with 1200 V SiC MOSFETs led to improvement of CAFE average efficiency from 98.7% to 99.5%, which corresponds to a reduction of average loss by a factor of approximately two. The modular nature of the composite converter architecture opens the possibility of reuse of one or more converter modules during charging operations, providing a path for onboard charging capability at significant power levels while significantly reducing the volume and weight of the added charger module. This project demonstrated an integrated Level II charger whose add-on specific weight was approximately four times better than the DOE PHEV charger 2022 targets.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2019

Low sputtering, cross-field, gas switch and method of operation

A gas switch includes a gas-tight housing containing an ionizable gas, an anode disposed within the gas-tight housing, and a cathode disposed within the gas-tight housing, where the cathode includes a conduction surface. The gas switch also includes a control grid positioned between the anode and the cathode, where the control grid is arranged to receive a bias voltage to establish a conducting plasma between the anode and the cathode. In addition, the gas switch includes a plurality of magnets selectively arranged to generate a magnetic field proximate the conduction surface that reduces the kinetic energy of charged particles striking the conduction surface and raises the conduction current density at the cathode surface to technically useful levels.

42 ENGINEERING↗
DOE OSTI2019

Impact of Isotropic Strain on Magnetic Properties of Monolayer MoSe{sub 2}-Doped with Nonmagnetic Metal and Nonmetal Atoms

Electronic and magnetic properties of MoSe{sub 2} monolayer doped with different nonmagnetic metal (Ag, Al, Li, Mg, and Na) and nonmetal (B, C, F, N, and O) elements have been studied by using the density functional theory calculations. Magnetism has been induced by Ag, Al, and Mg doping. Then, we further have studied the effect of strain on the magnetism in Al-doped MoSe{sub 2} monolayer. We have applied an isotropic strain on the system. On the one hand, the magnetism disappeared while the compressive strain was applied. On the other hand, the magnetism kept stable under the tensile strain. Moreover, we investigated the magnetic coupling in two-Al-doped MoSe{sub 2} structures under the tensile strain. Interestingly, a tunable magnetic coupling was observed. As the tensile strain increased, the magnetic coupling between two Al atoms switched from nonmagnetic (NM) to ferromagnetic (FM). The analysis of the PDOS showed that the p-p hybridization between the Al atom and its neighboring Se atoms resulted in such magnetic behavior. Our results showed some potential applications in MoSe{sub 2}-based nanoscale devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots

Many recipes for realizing topological superconductivity rely on broken time-reversal symmetry, which is often attained by applying a substantial external magnetic field. Alternatively, using magnetic materials can offer advantages through low-field operation and design flexibility on the nanoscale. Mechanisms for lifting spin degeneracy include exchange coupling, spin-dependent scattering, spin injection – all requiring direct contact between the bulk or induced superconductor and a magnetic material. Here, we implement locally broken time-reversal symmetry through dipolar coupling from nearby micromagnets to superconductor-semiconductor hybrid nanowire devices. Josephson supercurrent is hysteretic due to micromagnets switching. At or around zero external magnetic field, we observe an extended presence of Andreev bound states near zero voltage bias. We also show a zero-bias peak plateau of a non-quantized value. Our findings largely reproduce earlier results where similar effects were presented in the context of topological superconductivity in a homogeneous wire, and attributed to more exotic time-reversal breaking mechanisms [Nat. Phys. 17, 43 (2020)]. In contrast, our stray field profiles are not designed to create Majorana modes, and our data are compatible with a straightforward interpretation in terms of trivial states in quantum dots. At the same time, the use of micromagnets in hybrid superconductor-semiconductor devices shows promise for future experiments on topological superconductivity.

Jiang, Luyao [Univ. of Pittsburgh, PA (United Stat↗
DOE OSTI2017

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81 Fe 19 or Ni 65 Fe 15 Co 20 . By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extract the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗