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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Fossum, Eric R.↗
NASA NTRS1995

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2005

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Fossum, Eric R.↗
NASA NTRS2003

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2004

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2003

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗
NASA NTRS2006

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2009

Low-Noise Amplifier for 100 to 180 GHz

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

Kangaslahti, Pekka↗
NASA NTRS2009

Low-Noise MMIC Amplifiers for 120 to 180 GHz

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

Pukala, David↗
NASA NTRS2007

Aligning Optical Fibers by Means of Actuated MEMS Wedges

Microelectromechanical systems (MEMS) of a proposed type would be designed and fabricated to effect lateral and vertical alignment of optical fibers with respect to optical, electro-optical, optoelectronic, and/or photonic devices on integrated circuit chips and similar monolithic device structures. A MEMS device of this type would consist of a pair of oppositely sloped alignment wedges attached to linear actuators that would translate the wedges in the plane of a substrate, causing an optical fiber in contact with the sloping wedge surfaces to undergo various displacements parallel and perpendicular to the plane. In making it possible to accurately align optical fibers individually during the packaging stages of fabrication of the affected devices, this MEMS device would also make it possible to relax tolerances in other stages of fabrication, thereby potentially reducing costs and increasing yields. In a typical system according to the proposal (see Figure 1), one or more pair(s) of alignment wedges would be positioned to create a V groove in which an optical fiber would rest. The fiber would be clamped at a suitable distance from the wedges to create a cantilever with a slight bend to push the free end of the fiber gently to the bottom of the V groove. The wedges would be translated in the substrate plane by amounts Dx1 and Dx2, respectively, which would be chosen to move the fiber parallel to the plane by a desired amount Dx and perpendicular to the plane by a desired amount Dy. The actuators used to translate the wedges could be variants of electrostatic or thermal actuators that are common in MEMS.

Morgan, Brian↗
NASA NTRS1988

Development of FIR arrays with integrating amplifiers

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Young, Erick T.↗
DOE OSTI2021

Preparation of Mechanically Robust, Macroscopic Low-Density Gold Foams by Highly Efficient Electroless Gold Plating

Mechanically robust, macroscopic-sized low-density gold foams with unique morphology of hollow gold shells were prepared by the synthesis of gold-coated polystyrene coreshell particles followed by thermal removal of the polymer core. Here, we reported a simple, highly efficient electroless gold plating procedure to form ultrathin, conformal gold coatings on the surface of polystyrene particles. A modified, scalable casting approach to form uniform, large monoliths (up to 1 cm diameter) and a baking condition to minimize undesirable densification of final foams were also developed. To demonstrate the mechanical stability and integrity of the Au foams, a representative monolithic sample (~0.9 g/ cm3 ) was successfully cut and shaped into a gold foam “washer” by a series of precision machining and processing. A depth-sensing indentation test (nanoindentation) as well as characterizations on other useful properties such as surface areas and electrical conductivity of the Au foams were carried out to understand the mechanical behavior and potential applicability.

Electroless Gold Plating↗
NASA NTRS1991

Integrated 222-GHz corner-reflector antennas

A high-gain monolithic millimeter-wave antenna has been designed, fabricated, and tested at 222 GHz. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane and suspended in a longitudinal cavity etched in a silicon wafer. A new traveling-wave antenna design yields a wideband input impedance and a low cross-polarization component in the E- and quasi-H-plane patterns. A directivity of 17.7 dB and a main-beam efficiency of 88.5 percent are calculated from the 222-GHz pattern measurements. The integrated corner-reflector antenna is well suited for millimeter- and submillimeter-wave imaging applications in large f-number systems.

Gearhart, Steven S.↗
NASA NTRS1976

Integrally rigidized acoustic interior spacecraft panel

A sandwich panel concept is described which utilizes a monolithic I-beam design as the core. The core and skins are integrally bonded with thermosetting resin into a homogeneous structure. In addition to possessing a high strength to weight ratio, the panel resists combustion, delamination, aging due to fatigue, localized stresses, and exhibits good acoustic properties. Since the panel concept has definite potential as a high flame retardant and low smoke emission panel with excellent structural integrity, aerospace materials were used to optimize the construction for highly demanding space shuttle applications. The specific materials of construction were chosen for low flammability and off-gassing properties as well as for strength, light weight, and sound dampening.

Source record↗
DOE OSTI2026

A Compact Monolithic Electro-Optic Package for Quantum Microwave-to-Optical Transduction

We present a novel quantum transduction package that integrates a macroscopic electro-optic crystal into a compact, monolithic assembly designed for superconducting quantum processors. The device provides an efficient and scalable interface between microwave and optical domains while preserving cryogenic compatibility. We performed full-wave and quantum dynamical simulations to assess the performance of the hybrid system, focusing on the interaction between a transmon-based microwave cavity and the crystal’s and cavity low-frequency microwave mode. The transmon operates both as an ancilla for the QPU and as a nonlinear element enabling four-wave mixing between cavity and electro-optic crystal microwave fields. Our results indicate that this architecture can coherently mediate quantum information transfer from the cavity to the electro-optic mode, offering a promising platform for on-chip quantum transduction within superconducting quantum networks.

Reineri, Alessandro [Fermilab] (ORCID:000000016175↗
DOE OSTI2026

A Compact Monolithic Electro-Optic Package for Quantum Microwave-to-Optical Transduction

We present a novel quantum transduction package that integrates a macroscopic electro-optic crystal into a compact, monolithic assembly designed for superconducting quantum processors. The device provides an efficient and scalable interface between microwave and optical domains while preserving cryogenic compatibility. We performed full-wave and quantum dynamical simulations to assess the performance of the hybrid system, focusing on the interaction between a transmon-based microwave cavity and the crystal’s and cavity low-frequency microwave mode. The transmon operates both as an ancilla for the QPU and as a nonlinear element enabling four-wave mixing between cavity and electro-optic crystal microwave fields. Our results indicate that this architecture can coherently mediate quantum information transfer from the cavity to the electro-optic mode, offering a promising platform for on-chip quantum transduction within superconducting quantum networks.

Reineri, Alessandro [Fermilab] (ORCID:000000016175↗
DOE OSTI2023

Accelerated thermal property mapping of TRISO advanced nuclear fuel

TRistructural ISOtropic (TRISO) fuel is a leading-edge nuclear fuel form representing a departure from the more traditional nuclear fuel forms utilized in the reactor fleet of today. Rather than a monolithic fuel pellet of uranium dioxide, integral fuel forms containing TRISO fuel are composed of thousands of microencapsulated uranium-bearing fuel kernels and individually coated with multiple layers of pyrolytic carbon and silicon carbide. These multilayered ceramic coatings serve as an environmental barrier to ensure radioactive and chemically reactive fission products are contained within the reactor fuel elements, but also participate in the transfer of heat generated in the nuclear fuel to the coolant – the primary purpose of a nuclear reactor. Since traditional thermal property measurement techniques, such as laser flash analysis, would be unable to resolve the thermal properties of the individual TRISO coating layers, a simplified frequency-domain thermoreflectance technique has been developed to rapidly map the thermal properties of TRISO particles. Using this technique, the thermal properties of TRISO particles have been mapped from room temperature up to 1000 °C to examine the spatial variation and temperature-dependency of the thermal properties within each layer. Additionally, spatial-domain thermoreflectance was used to examine the anisotropy of the thermal properties for each layer at different locations within a single TRISO particle, and across multiple TRISO particles to assess the intra- and inter-particle uniformity of thermal properties, respectively. To elucidate the underlying causes for the measured variations in thermal properties, scanning electron microscopy and Raman spectroscopy were used to examine variations in microstructure and chemical bonding within the different coating layers. Results from this work are then compared with previous examinations of TRISO fuel particles and microstructurally driven mechanisms for the variations in the measured thermal properties of the different carbonaceous layers are discussed.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗