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Results for “Single Event Effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Dealing with Ion LET Uncertainties: An Application of Generalized Linear Models

Although most SEE rate estimation methods presume a fit to SEE cross section vs. LET, fitting SEE data is challenging because the data are not compatible with the assumptions of many common fitting techniques (e.g. linear regression. The difficulty of fitting such data is compounded when the LET of the ion responsible for an SEE is uncertain. We modify a Generalized Linear Model SEE data fitting methodology to accommodate uncertain LET and apply the method to the problem of backside heavy-ion SEE testing to demonstrate the utility of the method, explore the dependence of systematic errors that arise from improper treatment of LET uncertainty and develop guidelines for minimizing such systematic errors when proper treatment is not possible. Additional applications are suggested and assessed for suitability of treatment by the model.

Single-event effects↗
NASA NTRS2022

Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs

We explore and elucidate physical failure mechanisms in a 4H-SiC, high voltage, superjunction (SJ) vertical DMOSFET from a single heavy ion strike using three-dimensional electro-thermal transient simulations. The single-event burnout (SEB) failure is thermal runaway from second breakdown, initiated by impact ionization and terminated with mesoplasma formation, at the center of the P-pillar/N+ substrate interface. We also demonstrate that the SEB performance of this SiC SJ DMOSFET is insensitive to the pillar width but sensitive to the strike location with ion strike at the P-pillar causing SEB at a lower blocking voltage than at the N-pillar. Compared to commercially available 1.2 kV blocking-rated non-SJ DMOSFETs, which have been demonstrated to survive SEB up to 525 V, the SJ DMOSFET increases SEB survival threshold voltage (VSEB) by a factor of 2.2, making it close to 1200 V, while the on-resistance is increased by only 11%. Using our recently developed figure of merit (FoM), which considers the trade-off between VSEB and on-state performance, we find that the SiC SJ DMOSFET achieves a FoM that is 14 times better, making it superior to conventional 1.2 kV SiC DMOSFETs for long-term radiation-tolerant operation in space applications.

Silicon Carbide↗
NASA NTRSDate not supplied

Space Radiation Environments Overview for MSFC Programs

Provide overview of Space Radiation Sources, Environments, Interactions with Electronic Devices - Radiation Sources - Solar Energetic Particles (SEP) and Solar Particle Events (SPE) - Galactic Cosmic Rays (GCR) - Radiation Environments - Van Allen belts - Beyond the belts - Reference SLS-SPEC-159 Rev G: Design Specification for Natural Environment (DSNE) - Interactions with Electronic Devices - Ionizing - Nonionizing - Internal Charging

Radiation Sources↗
NASA NTRSDate not supplied

NEPP Processor Enclave

Explore the source record for details and available documents.

graphics processing unit (GPU)↗
NASA NTRS2024

Under-Constrained SEE Data: Implications for Estimating and Bounding SEE Rates

Increasingly scarce SEE testing resources and rapid growth of the New Space sector have increased the prevalence of under-constrained SEE data. We develop Monte Carlo tools to assess implications for SEE rate estimation. We also show that Bayesian Priors based on large datasets of SEL susceptible parts can augment under-constrained data and improve bounds on SEL rates. The resulting Bayesian Priors are also useful for bounding system SEL risk.

Single-event effect↗
NASA NTRS2015

Schottky Diode Derating for Survivability in a Heavy Ion Environment

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

Radiation effects↗
NASA NTRS1991

Prediction of error rates in dose-imprinted memories on board CRRES by two different methods

An analysis of the expected space radiation effects on the single event upset (SEU) properties of CMOS/bulk memories onboard the Combined Release and Radiation Effects Satellite (CRRES) is presented. Dose-imprint data from ground test irradiations of identical devices are applied to the predictions of cosmic-ray-induced space upset rates in the memories onboard the spacecraft. The calculations take into account the effect of total dose on the SEU sensitivity of the devices as the dose accumulates in orbit. Estimates of error rates, which involved an arbitrary selection of a single pair of threshold linear energy transfer (LET) and asymptotic cross-section values, were compared to the results of an integration over the cross-section curves versus LET. The integration gave lower upset rates than the use of the selected values of the SEU parameters. Since the integration approach is more accurate and eliminates the need for an arbitrary definition of threshold LET and asymptotic cross section, it is recommended for all error rate predictions where experimental sigma-versus-LET curves are available.

Brucker, G. J.↗
NASA NTRS2012

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

Lauenstein, Jean-Marie↗
NASA NTRSDate not supplied

Improving the transient sensitivity of AMEGO-X using single-site events

AMEGO-X is a proposed Compton/pair telescope which will image and survey the medium-energy gamma-ray sky between 100 keV and 1 GeV. It is designed to detect and characterize gamma-ray emission from multi-messenger sources. On short time scales (<100s), including information from single-site events (photoelectric effect interactions)significantly increases AMEGO-X's sensitivity and lowers its energy threshold down to 25 keV. In this presentation, we will present AMEGO-X's sensitivity to transient events such as gamma-ray bursts and magnetar giant flares, and discuss the improvements due to the inclusion of single-site events. We will also discuss AMEGO-X's ability to localize transient sources and alert the community for follow-up observations.

Henrike Fleischhack↗
NASA NTRSDate not supplied

Improving the Transient Sensitivity of AMEGO-X Using Single-site Events

AMEGO-X is a Compton/pair gamma-ray telescope, submitted to NASA's 2021 MIDEX AO, which will image and survey the medium-energy gamma-ray sky between 100 keV and 1 GeV. It is designed to detect and characterize gamma-ray emission from multi-messenger sources. On short time scales (<100s), including information from single-site events (photoelectric effect interactions) significantly increases AMEGO-X's sensitivity and lowers its energy threshold down to 25 keV. In this presentation, we will present AMEGO-X's sensitivity to transient events such as gamma-ray bursts and magnetar giant flares, and discuss the improvements due to the inclusion of single-site events. We will also discuss AMEGO-X's ability to localize transient sources and alert the community for follow-up observations.

Henrike Fleischhack↗
DOE OSTI2025

QED nuclear medium effects at EIC energies

Here, we present the first calculation of quantum electrodynamics (QED) nuclear medium effects under the experimental conditions of future Electron-Ion Collider (EIC) experiments. Our work offers numerical estimates, particularly in the context of inclusive deep inelastic scattering on a $^{208}_{82}$Pb nucleus. While prior studies have predominantly focused on elastic scattering, our investigation extends to the more complex scenarios of inelastic processes within a nuclear medium. Our findings suggest that the cross section corrections due to QED nuclear medium effects could be substantial, reaching or exceeding the level of experimental precision. This work further compares the effects of single rescattering events with those of multiple rescatterings, as particles travel the nuclear volume. We estimate the dominant source of the uncertainties associated with our formalism by varying the scale of the atomic physics where the screening of the electric field of the nucleus happens. This calculation not only contributes to the understanding of QED nuclear medium effects, but also offers a path to a more precise extraction of the process-independent nonperturbative structure of nuclei.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1993

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Zoutendyk, John A.↗