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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering

Zinc Aluminum Oxide thin films were deposited on glass substrates by reactive DC magnetron sputtering method by varying oxygen flow rates from 1 to 4 sccm. Glancing angle X-ray diffraction patterns ofzinc aluminum oxide thin films exhibits (0 0 2) peak with c-plane preferentially oriented parallel to the substrate. The surface morphology and elemental analysis of the films was observed by field emission scanning electron microscopy attached with energy dispersive X-ray analysis spectroscopy. An average optical transmittance of 83–90% is obtained for the films deposited at various oxygen flow rates. The optical band gap of the films increases from 3.41 to 3.53 eV with the increase of oxygen flow rate due to Burstein–Moss effect. The optical dispersion parameters such as dispersion energy (E{sub d}), oscillator energy (E{sub o}) and static refractive index (n{sub o}) were determined using the Wemple-DiDomenico (W-D) single oscillator model. The nonlinear optical parameters such as optical susceptibility (χ{sup (1)}), third order nonlinear optical susceptibility (χ{sup (3)}) and nonlinear refractive index (n{sub 2}) were also determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films

The effect of ion-beam processing alternating with magnetron sputtering on the properties of zinc-oxide thin films is investigated. It is shown that ion-beam processing reduces the growth rate, coherent-scattering-region sizes, and the resistivity. The stoichiometric index, band gap, and refractive index increase. The transparency of the films in the weak absorption region remains unchanged.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Microstructure and Mechanical Properties of Multilayer α-AlN/α-BCN Coating as Functions of the Current Density during Sputtering of a B{sub 4}C Target

Multilayer AlN/BCN coating of nanometer scale have been prepared by magnetron sputtering of Al and B{sub 4}C targets in an argon–nitrogen atmosphere during deposition on a Si substrate. These coating have an X-ray amorphous structure and the maximum Knoop hardness of 27 GPa (at the current density 100 mA). The first-principle molecular dynamics calculations show that the B4–BN layer is dynamically unstable; thus, it will not be epitaxial and will be amorphous or have a structure different from the B4–BN structure. The thermal vacuum annealing from 600 to 800°C of samples with multilayer nanosized coating leads to the decrease in the Knoop hardness to 18 GPa; however, the coating structure is retained X-ray amorphous.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Properties of amorphous carbon thin films grown by ion beam sputtering

The electrical performance of amorphous carbon thin films obtained by the ion beam sputtering of a carbon target in argon has been investigated. It has been shown by the Raman spectroscopy method that these films have a graphite-like structure. It has also been found by conductivity and thermopower studies that the hopping mechanism of conductivity with a variable length of hops over localized states near the Fermi level changes to the mechanism of hopping over the nearest neighbors as the temperature rises from 77 to 190 K. Near room temperature, electrotransport is provided by variable-length hops over localized states at the tail of the valence band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Cobalt Modification of Thin Rutile Films Magnetron-Sputtered in Vacuum

Using X-ray phase analysis, atomic force microscopy, and secondary ion mass-spectrometry, the phase formation and component distribution in a Co–TiO{sub 2} film system have been investigated during magnetron sputtering of the metal on the oxide and subsequent vacuum annealing. It has been found that cobalt diffuses deep into titanium oxide to form complex oxides CoTi{sub 2}O{sub 5} and CoTiO{sub 3}. A mechanism behind their formation at grain boundaries throughout the thickness of the TiO{sub 2} film is suggested. It assumes the reactive diffusion of cobalt along grain boundaries in the oxide. A quantitative model of reactive interdiffusion in a bilayer polycrystalline metal–oxide film system with limited solubility of components has been developed. The individual diffusion coefficients of cobalt and titanium have been determined in the temperature interval 923–1073 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Influence of Annealing Temperature on the Microstructure and Morphology of TiN Films Synthesized by Dual Magnetron Sputtering

TiN films synthesized on leucosapphire substrates by dual magnetron sputtering have been annealed in vacuum at 600, 700, 800, and 900°C for 2 min. The microstructure and morphology of the films have been studied by X-ray diffraction and scanning electron microscopy at different temperatures. It has been found that annealing changes the microstructure, texture, grain size, and surface roughness of the TiN films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Synthesis of Highly Oriented Zinc-Oxide Films on Amorphous Substrates by the Method of Direct-Current Magnetron Sputtering

We describe the technology of obtaining highly oriented zinc-oxide (ZnO) films on amorphous substrates at high growth rates (up to 7 nm/s) by means of direct-current magnetron sputtering. It is suggested to optimize the substrate position with respect to magnetron and consider the floating potential to which the substrate is charged in magnetron discharge plasma as one of the main technological parameters. Electrondiffraction study of the structural characteristics of the obtained ZnO films showed that increase in the substrate temperature was accompanied by transformation of the crystallite shape from platelike to columnar.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Properties of the Barium–Strontium Titanate Films Deposited onto the Silicon Substrate by rf Cathode Sputtering

Using rf cathode sputtering of a target in the oxygen atmosphere, Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} solid solution thin films have been formed on the single-crystal Si(001) cut surface and their crystal structure, microstructure, and optical characteristics have been investigated. It is shown that the films are optically anisotropic, polycrystalline, and have a c axis preferred direction perpendicular to the substrate. The a and b axes in the substrate plane have no preferred direction. It has been established that, during the synthesis, a buffer layer with a thickness of about 20 nm forms between the film and substrate, which is optically equivalent to silicon oxide.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Surface Topography and Optical Properties of Thin AlN Films Produced on GaAs (100) Substrate by Reactive Ion-Plasma Sputtering

A study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on n-GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Tantalum Suboxide Films with Tunable Composition and Electrical Resistivity Deposited by Reactive Magnetron Sputtering

Tantalum-based films with tailored composition, density, and electrical resistivity are of interest for next generation hohlraums for magnetized indirect-drive inertial confinement fusion. Here, we use reactive direct-current magnetron sputtering to deposit tantalum suboxide films with O content in the range of 46–71 at.%. In contrast to a common approach involving varying reactive gas contents, compositional control is achieved kinetically by changing the total chamber pressure and the deposition rate, while keeping the working gas mix of Ar-5%O2 constant. The resultant films are X-ray amorphous with electrical resistivity varying by over seven orders of magnitude. The dominant conduction mechanism changes from metallic to activated tunneling above ∼55 at.% of O, which is characterized by a sharp increase in resistivity and a decrease in the carrier density at low temperatures.

36 MATERIALS SCIENCE↗
NASA NTRS1963

SPUTTERING ION SOURCE FOR SOLIDS

Sputtering argon ion source used for analysis of solids provides more stable operation than a spark source and allows electrometric recording of the mass spectrum

MASS SPECTROSCOPY↗