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DOE OSTI2022

Partial discharge sensor

An approach to detecting partial discharge events involves retrofitting an electrical system to include a capacitive sensor configured to capacitively sense partial discharge events of a component of the electrical system. The capacitive sensor has a first electrical conductor that forms a first terminal of the capacitive sensor, a second electrical conductor that forms a second terminal of the capacitive sensor, and a dielectric that separates the first electrical conductor and the second electrical conductor. The capacitive sensor generates an electrical sensor signal at an output of the capacitive sensor in response to the partial discharge event. The electrical sensor signal is converted to an optical signal and the optical signal is processed to detect an occurrence of the partial discharge event.

Karin, Todd↗

DOE OSTI2022

Contributions to Dielectric Constant Enhancement in Thin Film Metal Insulator Metal Capacitors

Thin film metal-insulator-metal capacitors were fabricated with varying dielectric and electrode thicknesses and areas. Measurement of the dielectric properties of the capacitors consistently yielded higher than predicted capacitance values, which prompted the exploration of three factors that could enhance the capacitance. Modeling of the fringing capacitance and field enhancement due to the capacitor geometry, both yield capacitance gains, albeit insufficient to fully explain the observed behavior. The possible role of changes in polarizability of the dielectric film constituents, due to the amorphous nature of the films was also evaluated, but the results of the investigation of this contribution were inconclusive. Herein, the role of accumulation/depletion layers on capacitance enhancement was also analyzed. For capacitors fabricated with thinner dielectrics, the presence of these layers can effectively reduce the dielectric thickness, resulting in contributions to capacitance that are significant. The calculations completed suggest these contributions may be more important than fringing field contributions. Additional studies of these mechanisms are in progress.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Interfacial water asymmetry at ideal electrochemical interfaces

Controlling electrochemical reactivity requires a detailed understanding of the charging behavior and thermodynamics of the electrochemical interface. Experiments can independently probe the overall charge response of the electrochemical double layer by capacitance measurements and the thermodynamics of the inner layer with potential of maximum entropy measurements. Relating these properties by computational modeling of the electrochemical interface has so far been challenging due to the low accuracy of classical molecular dynamics (MD) for capacitance and the limited time and length scales of ab initio MD. Here, we combine large ensembles of long-time-scale classical MD simulations with charge response from electronic density functional theory to predict the potential-dependent capacitance of a family of ideal aqueous electrochemical interfaces with different peak capacitances. We show that while the potential of maximum capacitance varies, this entire family exhibits an electrode charge of maximum capacitance (CMC) between -2.9 and -2.2 μC/cm 2 , regardless of the details in the electronic response. Simulated heating of the same interfaces reveals that the entropy peaks at a charge of maximum entropy (CME) of -5.1 ± 0.6 μC/cm 2 , in agreement with experimental findings for metallic electrodes. The CME and CMC both indicate asymmetric response of interfacial water that is stronger for negatively charged electrodes, while the difference between CME and CMC illustrates the richness in behavior of even the ideal electrochemical interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Spread Spectrum Time Domain Reflectometry and Steepest Descent Inversion to Measure Complex Impedance

In this paper, we present a method for estimating complex impedances using reflectometry and a modified steepest descent inversion algorithm. We simulate spread spectrum time domain reflectometry (SSTDR), which can measure complex impedances on energized systems for an experimental setup with resistive and capacitive loads. A parametric function, which includes both a misfit function and stabilizer function, is created. The misfit function is a least squares estimate of how close the model data matches observed data. The stabilizer function prevents the steepest descent algorithm from becoming unstable and diverging. Steepest descent iteratively identifies the model parameters that minimize the parametric function. We validate the algorithm by correctly identifying the model parameters (capacitance and resistance) associated with simulated SSTDR data, with added 3 dB white Gaussian noise. With the stabilizer function, the steepest descent algorithm estimates of the model parameters are bounded within a specified range. Furthermore, the errors for capacitance (220pF to 820pF) and resistance (50 Ω to 270 Ω) are < 10%, corresponding to a complex impedance magnitude |R +1/jωC| of 53 Ω to 510 Ω.

14 SOLAR ENERGY↗

NASA NTRS1997

Microfabricated Ice-Detection Sensor

Knowledge of ice conditions on important aircraft lift and control surfaces is critical for safe operation. These conditions can be determined with conventional ice-detection sensors, but these sensors are often expensive, require elaborate installation procedures, and interrupt the airflow. A micromachined, silicon-based, flush-mounted sensor which generates no internal heat has been designed, batch fabricated, packaged, and tested. The sensor is capable of distinguishing between an ice-covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometer-thick, boron-doped, silicon diaphragm which serves as one plate of a parallel-plate capacitor. This is bonded to a second silicon wafer which contains the fixed electrodes, one to drive the diaphragm by application of a voltage, the other to measure the deflection by a change in capacitance. The diaphragm sizes ranged from 1x1 mm to 3x3 mm, and the gap between parallel-plate capacitors is 2 micrometers. A 200 V d.c. was applied to the driving electrode which caused the capacitance to increase approximately 0.6pf, from a nominal capacitance of 0.6pf, when the surface was ice free. After the sensor was cooled below the freezing point of water, the same voltage range was applied to the drive electrode. The capacitance increased by the same amount. Then a drop of water was placed over the diaphragm and allowed to freeze. This created an approximately 2mm-thick ice layer. The applied 200V d.c. produced no change in capacitance, confirming that the diaphragm was locked to the ice layer. Since the sensor uses capacitive actuation, it uses very little power and is an ideal candidate for inclusion in a wireless sensing system.

DeAnna, Russell G.↗

NASA NTRS1961

A Technique for Increasing the Sensitivity of a Solid-State Fission Probe

A small silicon p-n junction wafer, when coated with uranium 235, can be used as a compact fission probe for low power flux and power mapping. Because of the inverse relation between the magnitude of a neutron-induced fission pulse and the inherent capacitance of the detecting element (capacitance is proportional to area), the size, and hence the sensitivity, of the semiconductor detector has been limited. New developments in the field of semiconductor detectors have made it possible to fabricate large area detectors which are essentially free from the capacitance effect. However, preliminary results indicate that they are much more susceptible to radiation damage than the detectors described in this report and as such may not be suitable for flux mapping. increasing the sensitivity cannot be accomplished by simply fabricating a larger detector. It has been observed that by combining the silicon p-n junction wafers in a series configuration the capacitance effect can be bypassed, and a fission probe can be made with a resultant increase in sensitivity by a factor of ten while sustaining only a minor decrease in pulse height. Analysis further indicates that for n silicon wafers in series, if n(C(sub i)) + C(sub c)/C(sub b) less than 0.1 where C(sub i) and C(sub c) are the preamplifier input and cable capacitances, respectively, and C(sub b) is the junction capacitance of a single silicon wafer, there should be no substantial reduction in pulse height due to series circuitry.

Steinberg, Robert↗

NASA NTRS1999

Two-Phase Quality/Flow Meter

A quality and/or flow meter employs a capacitance probe assembly for measuring the dielectric constant of flow stream, particularly a two-phase flow stream including liquid and gas components.ne dielectric constant of the flow stream varies depending upon the volume ratios of its liquid and gas components, and capacitance measurements can therefore be employed to calculate the quality of the flow, which is defined as the volume ratio of liquid in the flow to the total volume ratio of gas and liquid in the flow. By using two spaced capacitance sensors, and cross-correlating the time varying capacitance values of each, the velocity of the flow stream can also be determined. A microcontroller-based processing circuit is employed to measure the capacitance of the probe sensors.The circuit employs high speed timer and counter circuits to provide a high resolution measurement of the time interval required to charge each capacitor in the probe assembly. In this manner, a high resolution, noise resistant, digital representation of each of capacitance value is obtained without the need for a high resolution A/D converter, or a high frequency oscillator circuit. One embodiment of the probe assembly employs a capacitor with two ground plates which provide symmetry to insure that accurate measurements are made thereby.

Moerk, J. Steven↗

NASA NTRS2008

High-Voltage, Asymmetric-Waveform Generator

The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise leave the fundamental timing signal unchanged. The buffered timing signal would be fed as input to the level shifter. The output of the level shifter would serve as a timing and control signal for the high-voltage switch, causing the switch to alternately be (1) opened, allowing the capacitive load to be charged from a high-voltage DC power supply; then (2) closed to discharge the capacitive load to ground. Hence, the output waveform would closely approximate a series of exponential charging and discharging curves (see Figure 2).

Beegle, Luther W.↗

NASA NTRS2016

Evaluation of Methods for Molecular Dynamics Simulation of Ionic Liquid Electric Double Layers

We investigate how systematically increasing the accuracy of various molecular dynamics modeling techniques influences the structure and capacitance of ionic liquid electric double layers (EDLs). The techniques probed concern long-range electrostatic interactions, electrode charging (constant charge versus constant potential conditions), and electrolyte polarizability. Our simulations are performed on a quasi-two-dimensional, or slab-like, model capacitor, which is composed of a polarizable ionic liquid electrolyte, [EMIM][BF4], interfaced between two graphite electrodes. To ensure an accurate representation of EDL differential capacitance, we derive new fluctuation formulas that resolve the differential capacitance as a function of electrode charge or electrode potential. The magnitude of differential capacitance shows sensitivity to different long-range electrostatic summation techniques, while the shape of differential capacitance is affected by charging technique and the polarizability of the electrolyte. For long-range summation techniques, errors in magnitude can be mitigated by employing two-dimensional or corrected three dimensional electrostatic summations, which lead to electric fields that conform to those of a classical electrostatic parallel plate capacitor. With respect to charging, the changes in shape are a result of ions in the Stern layer (i.e. ions at the electrode surface) having a higher electrostatic affinity to constant potential electrodes than to constant charge electrodes. For electrolyte polarizability, shape changes originate from induced dipoles that soften the interaction of Stern layer ions with the electrode. The softening is traced to ion correlations vertical to the electrode surface that induce dipoles that oppose double layer formation. In general, our analysis indicates an accuracy dependent differential capacitance profile that transitions from the characteristic camel shape with coarser representations to a more diffuse profile with finer representations.

Haskins, Justin B.↗

DOE OSTI2020

Highly microporous Parinari Curatellifolia carbon nanomaterials for supercapacitors

High surface area nanostructured electrodes are essential for understanding charge storage mechanisms in high capacitance supercapacitors. Additionally, a growing number of studies provide credible evidence that the highest capacitance in carbon nanomaterials is attainable only when the pore size is in micropore range. In this study therefore, micropore-dominatedcarbon materials derived from Parinari curatellifolia (PC) waste seeds are prepared via pyrolysis and subsequent chemical activation with KOH. SEM, EDAX, TEM, Raman, and XRD studies show that the microstructure and composition of the as-prepared microporous carbon materials are influenced by adjusting the KOH to carbon mass ratio. Sorption studies demonstrate a very high BET surface area of 1898 m 2 g –1 , type I isotherm, and 99% micropore content in all the samples. The BET surface area, S micro , V micro , and total volume increased with increasing KOH content during activation. The fabricated electrodes exhibit high specific capacitances of 423 F g –1 at 5 mV s –1 and cyclic stability of 98% after 50000 cycles both of which are indicative of our carbon materials huge potential in making high performance supercapacitors. The specific capacitance increased with the micropore content in the samples signifying that the pores enhanced diffusion and hence the charge storage. The PC carbon materials deliver high specific capacitance due to the enhancement of diffusion and charge storage stemming from the synergetic interplay of the aforementioned textural parameters. As a result, the PC carbon materials therefore provide good prospects for supercapacitor applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Do Deep Eutectic Solvents Behave Like Ionic Liquid Electrolytes? A Perspective from the Electrode-Electrolyte Interface

The differential capacitance as a function of potential and composition for choline chloride (ChCl) and ethylene glycol (EG) at 1:2,1:4, 1:6, and 1:20 molar ratios were studied using electrochemical impedance spectroscopy (EIS) on glassy carbon. In addition, ChCl:EG at the known ethaline DES composition (1:2) and 1:20 molar ratio were studied on Au and Pt electrodes, and compared to glyceline (ChCl:glycerol, 1:2). The capacitance-potential curves on glassy carbon were best interpreted by the modified Gouy-Chapman model. A dampened U-shape was observed similar to dilute electrolytes, however, the non-negligible ionic and H-bonding interactions in these electrolytes resulted in ambiguity about the point of zero charge where capacitance was weakly dependent on potential. Additionally, the differential capacitance was independent of composition on glassy carbon due to limited availability of mobile free ions and constraints by solvated ion sizes within the interface. Increases in capacitance are observed with Au as a result of desolvation and specific adsorption of Cl, and with Pt upon decreased Cl concentrations. These results indicate DESs and H-bonded electrolytes with high salt concentrations are distinct from ionic liquids and present no pronounced over screening or crowding with applied potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Assessment of Readout Techniques for Passive Monitors

This fiscal year (FY) 2023 report on passive temperature sensors covers two main objectives: to demonstrate that the optical dilatometer can successfully process disc shaped silicon carbide (SiC) temperature monitors (TMs), and to demonstrate proof of concept for using the capacitance readout method to read printed melt wires. The SiC objective was successfully met by annealing and analyzing, via optical dilatometry, all eight 3-mm SiC discs provided by the Nuclear Science User Facilities (NSUF) Idaho State University (ISU) Nanostructured Steels for Enhanced Radiation Tolerance (N SERT) experiment, which was irradiated at Idaho National Laboratory (INL)’s Advanced Test Reactor (ATR). Per the ISU N SERT experiment, capsule 1 (KGT 3828 1 and KGT 3828-2) had a design temperature of 300°C +/- 50°C and an exposure of 2 dpa +/- 10%; capsule 2 (KGT 4600 and KGT 4609) had a design temperature of 300°C +/- 50°C and an exposure of 6 dpa +/- 10%; capsule 3 (KGT 4639 C and KGT 4639-D) had a design temperature of 500°C +/- 50°C and an exposure of 6 dpa +/- 10%; and capsule 4 (KGT 3841 3 and KGT 3841 4) had a design temperature of 500°C +/- 50°C and an exposure of 2 dpa +/- 10%. The target exposure rates, in dpa, are the neutron damage for various types of nanostructured steels. All but three SiC TMs (KGT 4600, KGT 4639 D, and KGT 3841 4) revealed averaged peak irradiation temperatures that fell within the design temperature ranges. The three SiC TMs that did not fall within the design temperatures ranges were at least 100°C below that target temperature. Furthermore, SiC TM KGT 3841 C revealed two irradiation regimes: one closer to the 300°C design temperature, and the other closer to the 500°C design temperature. Also, all the SiC TMs’ averaged peak irradiation temperatures came in anywhere between 20°C and 240°C below the irradiation temperatures predicted by the thermal models. This showed the optical dilatometry method to be a reliable and less time intensive process for determining averaged peak irradiation temperatures from passive SiC TMs such as rods and discs. Under the Advanced Sensors and Instrumentation (ASI) program in FY-23, Boise State University (BSU) proposed to demonstrate proof of concept for using a capacitance readout technique applicable to printed melt wires; however, they were stymied by the complexity of the capacitance readout method. In support of the BSU work, INL developed an additively manufactured (AM) ceramic package for encapsulating the new melt wires. Inks were synthesized at BSU that used new protocols rather than following previously established protocols implemented at INL, and testing of various temperatures was conducted at BSU to evaluate the melting behaviors of the printed melt wires. The result was that the capacitance readout technique showed promise but also created more challenges than originally anticipated. For example, the tin ink synthesized at BSU showed unusual melting behaviors that did nothing to enhance the performance of the final printed melt wire prototype in terms of the capacitance readout method. To make the proof of concept work when applied to the printed melt wires, the ASI program would need to invest further resources and time. Consequently, the program is not planning to continue this proof of concept work in FY-24, based on the progress and findings achieved in FY-23.

36 MATERIALS SCIENCE↗

NASA NTRS1990

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Bishop, W.↗

NASA NTRS2001

Silicon micromachined accelerometer/seismometer and method of making the same

A silicon-based microaccelerometer for seismic application is provided using a low-resonant frequency (10 Hz), large proof mass (1 gram), and high Q suspension to achieve high sensitivity of less than 1 ng with a bandwidth a 0.05 to 50 Hz. The proof mass is cut away from a planar substrate in the form of a disk using abrasive cutting, which disk closely fits but does not touch a surrounding angular frame. The spring of the microaccelerometer between the angular frame and the proof mass is provided from two continuous, 3 microns thick membranes. The fixed capacitive electrodes are provided on separate, subsequently bonded substrates, and movable capacitive plates are provided on the membranes. By fabricating capacitive plates on the separate substrates, the gap between the fixed and movable capacitive plates in the differential capacitive sensor is closely controlled. The use of continuous membranes for the spring produces a shock resistant, robust sensor.

Martin, Richard D.↗

NASA NTRS2003

Capacitor-Chain Successive-Approximation ADC

A proposed successive-approximation analog-to-digital converter (ADC) would contain a capacitively terminated chain of identical capacitor cells. Like a conventional successive-approximation ADC containing a bank of binary-scaled capacitors, the proposed ADC would store an input voltage on a sample-and-hold capacitor and would digitize the stored input voltage by finding the closest match between this voltage and a capacitively generated sum of binary fractions of a reference voltage (Vref). However, the proposed capacitor-chain ADC would offer two major advantages over a conventional binary-scaled-capacitor ADC: (1) In a conventional ADC that digitizes to n bits, the largest capacitor (representing the most significant bit) must have 2(exp n-1) times as much capacitance, and hence, approximately 2(exp n-1) times as much area as does the smallest capacitor (representing the least significant bit), so that the total capacitor area must be 2(exp n) times that of the smallest capacitor. In the proposed capacitor-chain ADC, there would be three capacitors per cell, each approximately equal to the smallest capacitor in the conventional ADC, and there would be one cell per bit. Therefore, the total capacitor area would be only about 3(exp n) times that of the smallest capacitor. The net result would be that the proposed ADC could be considerably smaller than the conventional ADC. (2) Because of edge effects, parasitic capacitances, and manufacturing tolerances, it is difficult to make capacitor banks in which the values of capacitance are scaled by powers of 2 to the required precision. In contrast, because all the capacitors in the proposed ADC would be identical, the problem of precise binary scaling would not arise.

Cunningham, Thomas↗

DOE OSTI2023

Distance-dependent dielectric constant at the calcite/electrolyte interface: Implication for surface complexation modeling

Hypothesis: The electrical double layer formed at the mineral/electrolyte interface is often modeled using mean-field approaches based on a continuum description of the solvent whose dielectric constant is assumed to decrease monotonically with decreasing distance to the surface. In contrast, molecular simulations show that the solvent polarizability oscillates near the surface similar to the water density profile - as shown previously, for example, by Bonthuis et al. (D.J. Bonthuis, S. Gekle, R.R. Netz, Dielectric Profile of Interfacial Water and its Effect on Double-Layer Capacitance, Phys Rev Lett 107(16) (2011) 166102). Here, we showed that molecular and mesoscale pictures agree by spatially averaging the dielectric constant obtained from molecular dynamics simulations over the distances relevant to the mean-field representation. In addition, the values of capacitances used to describe the electrical double layer in Surface Complexation Models (SCMs) of the mineral/electrolyte interface can be estimated using molecularly informed spatially averaged dielectric constants and positions of hydration layers. Experiments: First, we used molecular dynamics simulations to model the calcite 101¯4/electrolyte interface. Next, by using atomistic trajectories, we calculated the distance-dependent static dielectric constant and water density in the direction normal to the. Finally, we applied spatial compartmentalization consistent with the model of parallel-plate capacitors connected in series to estimate SCM capacitances. Findings: Computationally expensive simulations are required to determine the dielectric constant profile of interfacial water near the mineral surface. On the other hand, water density profiles are readily assessable from much shorter simulation trajectories. Our simulations confirmed that dielectric and water density oscillations at the interface are correlated. Here, we parametrized linear regression models to estimate the dielectric constant directly from the local water density. This is a significant computational shortcut compared to slowly converging calculations relying on total dipole moment fluctuations. The amplitude of the interfacial dielectric constant oscillation can exceed the dielectric constant of the bulk water, suggesting an ice-like frozen state, but only if there are no electrolyte ions. The interfacial accumulation of electrolyte ions causes a decrease in the dielectric constant due to the reduction of water density and re-orientation of water dipoles in ion hydration shells. Finally, we show how to use the computed dielectric properties to estimate SCM's capacitances.

58 GEOSCIENCES↗

DOE OSTI2022

Broad Applicability of Electrochemical Impedance Spectroscopy to the Measurement of Oxygen Nonstoichiometry in Mixed Ion and Electron Conductors

Oxygen non-stoichiometry is a fundamental feature of mixed ion and electron conductors (MIECs). In this work a general electrochemical method for determining non-stoichiometry in thin film MIECs, via measurement of the chemical capacitance, is demonstrated using ceria and ceria-zirconia (Ce 0.8 Zr 0.2 O 2-δ ) as representative materials. A.C. impedance data are collected from both materials at high temperature (750-900 °C) under reducing conditions with oxygen partial pressure (pO 2 ) in the range 10-13 to 10-20 atm. Additional measurements of ceria-zirconia films are made under relatively oxidizing conditions with pO 2 in the range 0.2 to 10 -4 atm and temperatures of 800-900 °C. Under reducing conditions, the impedance spectra are described by a simple circuit in which a resistor is in series with a resistor and capacitor in parallel, and thickness dependent measurements are used to resolve the capacitance into interfacial and chemical terms. Under more oxidizing conditions, the impedance spectra (of Ce 0.8 Zr 0.2 O 2-δ ) reveal an additional diffusional feature, which enables determination of the ionic resistance of the film in addition to the capacitance, and hence the transport properties. A generalized mathematical formalism is presented for recovering the non-stoichiometry from the chemical capacitance, without recourse to defect chemical models. The ceria non-stoichiometry values are in good agreement with literature values determined by thermogravimetric measurements but display considerably less scatter and are collected on considerably shorter timescales. Here, the thermodynamic analysis of Ce 0.8 Zr 0.2 O 2-δ corroborates earlier findings that introduction of Zr into ceria enhances its reducibility.

08 HYDROGEN↗

DOE OSTI2023

Linking stem rehydration kinetics to hydraulic traits using a novel method and mechanistic model

Background: Despite the recognized importance of hydraulic capacitance as a mechanism used by plants to maintain hydraulic functioning during high transpiration, characterizing the dynamics of capacitance remains a challenge. Methods: For this work, we used a novel ‘two-balance method’ to investigate relationships between stem rehydration kinetics and other hydraulic traits in multiple tree species, and we developed a model to explore stem rehydration kinetics further. Key Results: We found that: (1) rehydration time constants and the amount of water uptake occurring during rehydration differed significantly across species; (2) time constants did not change with declining water potential (Ψ), while water uptake increased at lower Ψ in some species; (3) longer time constants were associated with lower wood density, higher capacitance and less negative stem pressures causing 50 % loss of hydraulic conductivity (P 50 ); (4) greater water uptake occurred in stems with lower wood density and less negative P 50 values; and (5) the model could estimate the total hydraulic resistance of the rehydration path, which cannot be measured directly. Conclusions: Overall, the two-balance method can be used to examine rehydration dynamics quickly and thoroughly in detached woody stems. This method has the potential to improve our understanding of how capacitance functions across tree species, which is an often-overlooked component of whole-plant hydraulics.

54 ENVIRONMENTAL SCIENCES↗