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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Fault Detection, Isolation and Recovery (FDIR) Portable Liquid Oxygen Hardware Demonstrator

The Fault Detection, Isolation and Recovery (FDIR) hardware demonstration will highlight the effort being conducted by Constellation's Ground Operations (GO) to provide the Launch Control System (LCS) with system-level health management during vehicle processing and countdown activities. A proof-of-concept demonstration of the FDIR prototype established the capability of the software to provide real-time fault detection and isolation using generated Liquid Hydrogen data. The FDIR portable testbed unit (presented here) aims to enhance FDIR by providing a dynamic simulation of Constellation subsystems that feed the FDIR software live data based on Liquid Oxygen system properties. The LO2 cryogenic ground system has key properties that are analogous to the properties of an electronic circuit. The LO2 system is modeled using electrical components and an equivalent circuit is designed on a printed circuit board to simulate the live data. The portable testbed is also be equipped with data acquisition and communication hardware to relay the measurements to the FDIR application running on a PC. This portable testbed is an ideal capability to perform FDIR software testing, troubleshooting, training among others.

Oostdyk, Rebecca L.↗
NASA NTRS2009

Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗
NASA NTRS1993

Predicting Lifetimes Of CMOS ASIC's From Test Data

Concise report discusses recent developments in use of semiempirical mathematical models to predict rates of failure and operating lifetimes of complementary metal oxide/semiconductor (CMOS) application-specific integrated circuits (ASIC's). Each model represents specific mechanism of failure. Once failure mechanisms and models relevant to given ASIC chosen, adjustable parameters in models fitted to life-test data acquired from representative integrated-circuit structures on test coupons fabricated along with ASIC's. Then design parameters of ASIC's incorporated into models, and models yield lifetimes.

Buehler, Martin G.↗
DOE OSTI2022

Circuit complexity near critical points

Here, we consider the Bose–Hubbard model in two and three spatial dimensions and numerically compute the quantum circuit complexity of the ground state in the Mott insulator and superfluid phases using a mean field approximation with additional quadratic fluctuations. After mapping to a qubit system, the result is given by the complexity associated with a Bogoliubov transformation applied to the reference state taken to be the mean field ground state. In particular, the complexity has peaks at the O(2) critical points where the system can be described by a relativistic quantum field theory. Given that we use a Gaussian approximation, near criticality the numerical results agree with a free field theory calculation. To go beyond the Gaussian approximation we use general scaling arguments that imply that, as we approach the critical point t → t c , there is a non-analytic behavior in the complexity c 2 (t) of the form |c 2 (t) – c 2 (t c )| ~ |t – t c | νd , up to possible logarithmic corrections. Here d is the number of spatial dimensions and ν is the usual critical exponent for the correlation length ξ ~ |t – t c | –ν . As a check, for d = 2 this agrees with the numerical computation if we use the Gaussian critical exponent $v=\frac{1}{2}$. Finally, using AdS/CFT methods, we study higher dimensional examples and confirm this scaling argument with non-Gaussian exponent ν for strongly interacting theories that have a gravity dual.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2000

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

Miranda, Felix A.↗
NASA NTRS2016

First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits

A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET) digital and analog Integrated Circuits (ICs) with two levels of metal interconnect have reproducibly demonstrated electrical operation at 500 C in excess of 1000 hours. While this progress expands the complexity and durability envelope of high temperature ICs, one important area for further technology maturation is the development of reasonably accurate and accessible computer-aided modeling and simulation tools for circuit design of these ICs. Towards this end, we report on development and verification of 25 C to 500 C SPICE simulation models of first order accuracy for this extreme-temperature durable 4H-SiC JFET IC technology. For maximum availability, the JFET IC modeling is implemented using the baseline-version SPICE NMOS LEVEL 1 model that is common to other variations of SPICE software and importantly includes the body-bias effect. The first-order accuracy of these device models is verified by direct comparison with measured experimental device characteristics.

JFET↗
DOE OSTI2021

Modulation and Modeling of Three-Dimensional Nanowire Assemblies Targeting Gas Sensors with High Response and Reliability

Despite improved sensitivity, simple downsizing of gas-sensing components to randomly arranged nanostructures often faces challenges associated with unpredictable electrical conduction pathways. In the present study, controlled fabrication of three-dimensional (3D) metal oxide nanowire networks is demonstrated that can greatly improve both signal stability and sensor response compared to random nanowire arrays. For example, the highest ever reported H 2 S gas response value, and a 5 times lower relative standard deviation of baseline resistance than that of random nanowires assemblies, are achieved with the ordered 3D nanowire network. Systematic engineering of 3D geometries and their modeling, utilizing equivalent circuit components, provide additional insights into the electrical conduction and gas-sensing response of 3D assemblies, revealing the critical importance of wire-to-wire junction points and their arrangement. Here these findings suggest new design rules for both enhanced performance and reliability of chemical sensors, which may also be extended to other devices based on nanoscale building blocks.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tracking the evolution of processes occurring in silicon anodes in lithium ion batteries by 3D visualization of relaxation times

An unconventional electroanalytical method has been used for tracking processes in silicon anodes in lithium ion batteries: a 3D visualization of relaxation times. Impedance data of the electrodes were collected at different potentials and different cycles during cyclic voltammetry, and were treated by means of the Distribution of Relaxation Times (DRT) method. A 3D visualization of the results allowed to identify the formation of a solid electrolyte interphase on the anode, composed of two layers with different relaxation times. Such findings are not possible by conventional analysis of impedance data by modeling with equivalent circuits, nor by simple DRT alone. Additionally, it was possible to observe that the characteristic relaxation time of the lithiation of the Si anode becomes smaller upon cycling, indicating that the material experiences structural transformations that allow it to lithiate faster. The result is relevant to motivate the use of micron-sized particles in the anode.

25 ENERGY STORAGE↗
DOE OSTI2023

Real-time quantum error correction beyond break-even

The ambition of harnessing the quantum for computation is at odds with the fundamental phenomenon of decoherence. The purpose of quantum error correction (QEC) is to counteract the natural tendency of a complex system to decohere. This cooperative process, which requires participation of multiple quantum and classical components, creates a special type of dissipation that removes the entropy caused by the errors faster than the rate at which these errors corrupt the stored quantum information. Previous experimental attempts to engineer such a process faced an excessive generation of errors that overwhelmed the error-correcting capability of the process itself. Whether it is practically possible to utilize QEC for extending quantum coherence thus remains an open question. We answer it by demonstrating a fully stabilized and error-corrected logical qubit whose quantum coherence is significantly longer than that of all the imperfect quantum components involved in the QEC process, beating the best of them with a coherence gain of G=2.27±0.07. Here we achieve this performance by combining innovations in several domains including the fabrication of superconducting quantum circuits and model-free reinforcement learning.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Benchmarking near-term quantum devices with the variational quantum eigensolver and the Lipkin-Meshkov-Glick model

The variational quantum eigensolver is a promising algorithm for noisy intermediate scale quantum (NISQ) computation. Verification and validation of NISQ algorithms' performance on NISQ devices is an important task. Here, we consider the exactly diagonalizable Lipkin-Meshkov-Glick (LMG) model as a candidate for benchmarking NISQ computers. We use the Bethe Ansatz to construct eigenstates of the trigonometric LMG model using quantum circuits inspired by the LMG's underlying algebraic structure. We construct circuits with depth $\mathcal{O}$(N) and $\mathcal{O}$(log 2 N) that can prepare any trigonometric LMG eigenstate of N particles. The number of gates required for both circuits is $\mathcal{O}$(N). The energies of the eigenstates can then be measured and compared to the exactly known answers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

A Survey on the Expanding Scope and Interdisciplinary Opportunities for Processing-in-Memory Techniques

Processing-in-Memory (PIM) is emerging as a practical path to overcome the limitations of traditional von Neumann architectures. At its core, PIM systems implement computing primitives such as logic operations and multiply-accumulate acceleration through compute-in-memory, near-memory processing, or hybrid designs. The role of memory cells varies widely across technologies, acting as inputs, outputs, or analog accumulators through bit-lines and sense amplifiers. This diversity creates trade-offs in precision, bandwidth, latency, and programmability, making it difficult to build a unified understanding on the progress of the field. In this survey, we organize recent advances of PIM into three areas. First, we discuss the progress on the architectural optimizations of PIM and its integration with both DRAM and emerging non-volatile memories. Second, we examine how PIM is being used to accelerate key computing domains, including generative AI workloads and high-performance kernels, along with new approaches. Third, we highlight the growing adoption of PIM in computational sciences, where it is being applied to solve interdisciplinary problems such as genome analysis, mRNA quantification, mass spectrometry, quantum circuit simulation, wave modeling, and secure computation. Finally, we synthesize the major challenges that continue to slow PIM adoption, including manufacturing constraints, power delivery, thermal reliability, data consistency, runtime and memory-management coordination, and the difficulty of building portable software abstractions without sacrificing commercial viability. This work provides an updated, structured perspective on PIM’s potential across computing and computational sciences and the barriers that must be solved for it to reach its full impact.

Asifuzzaman, Kazi [Oak Ridge National Laboratory (↗
DOE OSTI2022

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

42 ENGINEERING↗
DOE OSTI2025

Attention to quantum complexity

The imminent era of error-corrected quantum computing demands robust methods to characterize quantum state complexity from limited, noisy measurements. We introduce the Quantum Attention Network (QuAN), a classical artificial intelligence (AI) framework leveraging attention mechanisms tailored for learning quantum complexity. Inspired by large language models, QuAN treats measurement snapshots as tokens while respecting permutation invariance. Combined with our parameter-efficient miniset self-attention block, this enables QuAN to access high-order moments of bit-string distributions and preferentially attend to less noisy snapshots. We test QuAN across three quantum simulation settings: driven hard-core Bose-Hubbard model, random quantum circuits, and toric code under coherent and incoherent noise. QuAN directly learns entanglement and state complexity growth from experimental computational basis measurements, including complexity growth in random circuits from noisy data. In regimes inaccessible to existing theory, QuAN unveils the complete phase diagram for noisy toric code data as a function of both noise types, highlighting AI’s transformative potential for assisting quantum hardware.

Kim, Hyejin [Cornell Univ., Ithaca, NY (United Sta↗
DOE OSTI2021

Magnetron R&D for high efficiency CW RF sources for industrial accelerators

The scheme of using high-efficiency magnetrons to drive radiofrequency accelerators has been demonstrated at 2450 MHz in CW mode *. Magnetron test stands at JLab and GA have been set up to further test the noise figure and the locking speed of the injection phase-lock method. For higher power applications, power combining experiments using a TM010 cavity-type combiner and a magic tee for the binary combiner while using a single clean injection signal has been carried out at 2450 MHz. The frequency pulling effect between the magnetron and a low-Q cavity has been shown to enhance the frequency locking bandwidth compared to the injection phase-lock alone. The principle has been studied by the equivalent circuit simulation, analytical model, and finally confirmed experimentally on the magnetrons. Due to the pandemic delay in 2020, the equivalent high power tests using a 75kW, 915MHz industrial magnetron will be done in 2021 and will be reported in a future paper.

Wang, H.↗
NASA NTRS1974

NASA Lewis 8 by 6 foot supersonic wind tunnel

Performance data are presented for the tunnel, which has a Mach number range from 0.36 to 2.0. The tunnel circuit, test section, model support systems, auxiliary systems, instrumentation, control room equipment, and automatic recording and computing equipment are also described. Information is presented on criteria for designing models and on shop facilities available to prospective users.

Swallow, R. J.↗
NASA NTRS1973

A centre for accommodative vergence motor control

Latencies in accommodation, accommodative-vergence, and pupil-diameter responses to changing accommodation stimuli, as well as latencies in pupil response to light-intensity changes were measured. From the information obtained, a block diagram has been derived that uses the least number of blocks for representing the accommodation, accommodative-vergence, and pupil systems. The signal transmission delays over the various circuits of the model have been determined and compared to known experimental physiological-delay data. The results suggest the existence of a motor center that controls the accommodative vergence and is completely independent of the accommodation system.

Wilson, D.↗