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At least 487 records · Page 27

Acetone sensor based on zinc oxide hexagonal tubes

In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hexagonally ordered nanodots: Result of substrate rotation during oblique incidence low energy IBS

The anisotropic regular patterns are often results during oblique incidence ion beam sputtering (IBS). Simultaneous substrate rotation (SR) during IBS can suppress surface roughening and removes anisotropic nature of surface pattern. Here, the evolution of Si surface morphology as result of with and without SR is studied during oblique incidence low energy Ar{sup +} sputtering. Resultant topography shows smooth surface to hexagonally ordered nanodots at different rotating conditions. Interestingly, surface roughness exhibits non-monotonic dependence on rotation frequency. The underlying mechanism for dot formation can be described within the framework of isotropic DKS equation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm{sup 2} V{sup −1} s{sup −1} at room temperature to 49 000 cm{sup 2} V{sup −1} s{sup −1} at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films

Si ion implantation with a set of ion energies and ion doses was carried out to dope hexagonal boron nitride (hBN) thin films synthesized by radio-frequency magnetron sputtering. Hall effect measurements revealed n-type conduction with a low resistivity of 0.5 Ω cm at room temperature, corresponding to an electron concentration of 2.0 × 10{sup 19} cm{sup −3} and a mobility of 0.6 cm{sup 2}/V s. Temperature-dependent resistivity measurements in a wide temperature range from 50 to 800 K demonstrated two shallow donor levels in the hBN band gap induced by Si doping, which was in consistence with the theoretical calculation by density function theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm{sup 2}/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C{sub 3}H{sub 8})) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN){sub 1-x}(C{sub 2}){sub x} alloys n-type and corroborates the Hall-effect measurement results.

36 MATERIALS SCIENCE↗

Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular beam epitaxy (MBE), we analyzed the atomistic details of the process by ab initio density functional theory (DFT), and we linked the DFT and MBE results by random walk theory. Graphene appears to nucleate around defects in virgin h-BN. The DFT analysis reveals that sticking of carbon to perfect h-BN is strongly reduced by desorption, so that pre-existing seeds are needed for the nucleation. The dominant nucleation seeds are C{sub N}C{sub B} and O{sub N}C{sub N} pairs and B{sub 2}O{sub 3} inclusions in the virgin substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electronic structure and aromaticity of large-scale hexagonal graphene nanoflakes

With the help of the recently developed SIESTA-pole (Spanish Initiative for Electronic Simulations with Thousands of Atoms) - PEXSI (pole expansion and selected inversion) method [L. Lin, A. García, G. Huhs, and C. Yang, J. Phys.: Condens. Matter 26, 305503 (2014)], we perform Kohn-Sham density functional theory calculations to study the stability and electronic structure of hydrogen passivated hexagonal graphene nanoflakes (GNFs) with up to 11 700 atoms. We find the electronic properties of GNFs, including their cohesive energy, edge formation energy, highest occupied molecular orbital-lowest unoccupied molecular orbital energy gap, edge states, and aromaticity, depend sensitively on the type of edges (armchair graphene nanoflakes (ACGNFs) and zigzag graphene nanoflakes (ZZGNFs)), size and the number of electrons. We observe that, due to the edge-induced strain effect in ACGNFs, large-scale ACGNFs’ edge formation energy decreases as their size increases. This trend does not hold for ZZGNFs due to the presence of many edge states in ZZGNFs. We find that the energy gaps E{sub g} of GNFs all decay with respect to 1/L, where L is the size of the GNF, in a linear fashion. But as their size increases, ZZGNFs exhibit more localized edge states. We believe the presence of these states makes their gap decrease more rapidly. In particular, when L is larger than 6.40 nm, we find that ZZGNFs exhibit metallic characteristics. Furthermore, we find that the aromatic structures of GNFs appear to depend only on whether the system has 4N or 4N + 2 electrons, where N is an integer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced sensitivity in a butterfly gyroscope with a hexagonal oblique beam

A new approach to improve the performance of a butterfly gyroscope is developed. The methodology provides a simple way to improve the gyroscope’s sensitivity and stability, by reducing the resonant frequency mismatch between the drive and sense modes. This method was verified by simulations and theoretical analysis. The size of the hexagonal section oblique beam is the major factor that influences the resonant frequency mismatch. A prototype, which has the appropriately sized oblique beam, was fabricated using precise, time-controlled multilayer pre-buried masks. The performance of this prototype was compared with a non-tuned gyroscope. The scale factor of the prototype reaches 30.13 mV/ °/s, which is 15 times larger than that obtained from the non-tuned gyroscope. The bias stability of the prototype is 0.8 °/h, which is better than the 5.2 °/h of the non-tuned devices.

36 MATERIALS SCIENCE↗

Thermal transport across graphene and single layer hexagonal boron nitride

As the dimensions of nanocircuits and nanoelectronics shrink, thermal energies are being generated in more confined spaces, making it extremely important and urgent to explore for efficient heat dissipation pathways. In this work, the phonon energy transport across graphene and hexagonal boron-nitride (h-BN) interface is studied using classic molecular dynamics simulations. Effects of temperature, interatomic bond strength, heat flux direction, and functionalization on interfacial thermal transport are investigated. It is found out that by hydrogenating graphene in the hybrid structure, the interfacial thermal resistance (R) between graphene and h-BN can be reduced by 76.3%, indicating an effective approach to manipulate the interfacial thermal transport. Improved in-plane/out-of-plane phonon couplings and broadened phonon channels are observed in the hydrogenated graphene system by analyzing its phonon power spectra. The reported R results monotonically decrease with temperature and interatomic bond strengths. No thermal rectification phenomenon is observed in this interfacial thermal transport. Results reported in this work give the fundamental knowledge on graphene and h-BN thermal transport and provide rational guidelines for next generation thermal interface material designs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural, optical and dielectric properties of Ce{sup 3+}, Pr{sup 3+}, Nd{sup 3+} doped LaF{sub 3} hexagonal nanoparticles

Well dispersed, elongated and hexagonal LaF{sub 3}: Ce{sup 3+}, Pr{sup 3+}, Nd{sup 3+} nanocrystals have been synthesized by microwave assisted technique. X-ray diffraction (XRD) studies indicates the formation of nanocrystals with unit cell parameters a = b = 7.144 A{sup 0}, c = 7.281 A{sup 0}, (c/a = 1.019) and unit cell volume of 321.86 (A{sup 0}){sup 3} of average crystallite size 21 nm have been traced by from XRD analysis and it is close agreement with transmission electron microscope (TEM) analysis. Ultra-violet (UV) absorption spectrum shows an edge at 250 nm indicating presence of wide transparency window region between 200 nm-800 nm. Fundamental groups have been observed in the Fourier transformation infrared (FTIR) and FT-Raman spectra. The blue luminescent properties of the nanoparticles were investigated by excitation and emission spectra. Room temperature Electrical and dielectric properties were studied for the synthesized nanocrystals the values of conductivity & resistivity is found to be in the order of 10{sup −6} Scm{sup −1} and resistivity 10{sup 5} Ω cm. Low dielectric constant value was observed in the LaF{sub 3}: Ce{sup 3+}, Pr{sup 3+}, and Nd{sup 3+} nanocrystals at high frequency indicating its suitability for electro optics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fundamental solutions in a half space of two-dimensional hexagonal quasicrystal and their applications

Fundamental phonon-phason field in a half-infinite space of two-dimensional hexagonal quasicrystal is derived, on the basis of general solutions in terms of quasi-harmonic functions, by virtue of the trial-and-error technique. Extended Boussinesq and Cerruti problems are studied. Appropriate potential functions are assumed and corresponding fundamental solutions are explicitly derived in terms of elementary functions. The boundary integral equations governing the contact and crack problems are constructed from the present fundament solutions. The obtained analytical solutions can serve as guidelines for future indentation tests via scanning probe microscopy and atomic force microscopy methods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Surfactant assisted synthesis of aluminum doped SrFe{sub 10}Al{sub 2}O{sub 19} hexagonal ferrite

M-type aluminum doped SrFe{sub 10}Al{sub 2}O{sub 19} were synthesized via co-precipitation method using cetyltrimethyl ammonium bromide (CTAB) as a surfactant. The effects of CTAB content (x = 0, 1, 3, and 9 wt. %) on the formation, structure, morphology, magnetic, and dielectric properties of the SrFe{sub 10}Al{sub 2}O{sub 19} nanoparticles were investigated. X-ray diffraction results show elimination of α-Fe{sub 2}O{sub 3} phase from samples prepared using CTAB. Morphological changes including grain and crystallite size was noticed with the increase in the CTAB content. With the increase in CTAB, powder particles grew in hexagonal plates. A linear increase in saturation magnetization, Ms, with CTAB content was observed from 56.5 emu/g at 0% CTAB to 66.4 emu/g at 9% CTAB. This is a net increase of 17.5% in Ms. The coercivity (Hc ∼ 5700 Oe) of sample reached maximum at 1% CTAB and reduced with further CTAB content reaching to a minimum value of 4488 Oe at 9% CTAB. A slight increase in Curie temperature (735 K) was also observed for samples synthesized using CTAB as compared to that of sample prepared in the absence of CTAB (729 K). Samples synthesized with CTAB show higher dielectric constants as compared to samples prepared without CTAB, while dielectric constant for all samples show decrease in value with the increase in frequency. These results imply that CTAB may act as a crystallization master, controlling the nucleation and growth of SrFe{sub 10}Al{sub 2}O{sub 19} crystal. The study delineates the scope of improving magnetic properties of ferrites without substitution of metal ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Polaron response dominated multiferroic property in 12R-type hexagonal Ba(Ti{sub 1/3}Mn{sub 2/3})O{sub 3-δ} ceramics

We report the multiferroic properties of 12R-type hexagonal Ba(Ti{sub 1/3}Mn{sub 2/3})O{sub 3-δ} found in Mn-doped BaTiO{sub 3} series samples. Hysteresis measurements reveal the coexistence of weak ferromagnetism and ferroelectricity at room temperature. Furthermore, frequency-driven dynamic ferroelectric phase transition is disclosed around a critical frequency of 220 Hz. Analyses on the dielectric relaxation, leakage current, crystal structure, and magnetic susceptibility lead us to conclude that the response of polarons dominates the observed physical properties, and the dynamic phase transition may ascribe to the response mode changes of the localized electrons. More importantly, we figure out the crucial factors leading to difference of the ferroelectric and magnetic properties of the 12R-type Ba(Ti{sub 1/3}Mn{sub 2/3})O{sub 3-δ} samples from that of the 6H-type Ba(Ti{sub 1-x}M{sub x})O{sub 3-δ} (M = Fe, Mn) samples.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗