Search NASA⌕ Search

SEARCH · Search NASA

Results for “integrated circuit testing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Effect of Helical Slow-Wave Circuit Variations on TWT Cold-Test Characteristics

Recent advances in the state of the art of computer modeling offer the possibility for the first time to evaluate the effect that slow-wave structure parameter variations, such'as manufacturing tolerances, have on the cold-test characteristics of helical traveling-wave tubes (TWT's). This will enable manufacturers to determine the cost effectiveness of controlling the dimensions of the component parts of the TWT, which is almost impossible to do experimentally without building a large number of tubes and controlling several parameters simultaneously. The computer code MAxwell's equations by the Finite Integration Algorithm (MAFIA) is used in this analysis to determine the effect on dispersion and on-axis interaction impedance of several helical slow-wave circuit parameter variations, including thickness and relative dielectric constant of the support rods, tape width, and height of the metallized films deposited on the dielectric rods. Previous computer analyzes required so many approximations that accurate determinations of the effect of many relevant dimensions on tube performance were practically impossible.

Kory, Carol L.↗
NASA NTRS2010

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Burns, Bradley M.↗
DOE OSTI2021

Production and tests of the ADDC for the Micromegas detector of the ATLAS New Small Wheel

The Large Hadron Collider (LHC) at CERN will perform a series of upgrades to allow luminosity increases during the next physics runs expected from 2022 on. These will also significantly increase the trigger rates of all the detectors. As part of the ATLAS Phase-I upgrade, the current Small Wheel muon detectors will be replaced with state-of-the-art New Small Wheel (NSW) detectors to cope with the increased luminosity of the LHC. The Address in Real Time Data Driver Card (ADDC) is designed to transmit the trigger data from the resistive Micro-Mesh Gaseous Structure (Micromegas) detectors of the NSW. The ART ASIC on the ADDC is a customdesigned chip to receive theAddress in Real Time (ART) signals from theVMMfront-end ASIC and perform hit-selection processing. The processed trigger data is then sent to the Trigger Processor (TP) through optical links. A total of 512 ADDCs will be installed on the detector close to the front-end boards. Therefore, those cards must be able to work properly in a high radiation and magnetic field environment. Furthermore, after four rounds of prototyping, the ADDC production was launched in January of 2019. 600 ADDC boards have been produced and tested with an automated test stand. This test setup can simulate the front-end signals and provide "Level-1 Data Driver Card" (L1DDC) functions as well as part of the TP functions. Thus, the ADDC functionality and stability can be verified without the remaining NSW electronics. This paper describes the ADDC hardware prototype development, radiation and integration testing, and the ADDC automated production test procedure.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Scattering phase shift in quantum mechanics on quantum computers

Here, we investigate the feasibility of extracting infinite volume scattering phase shift on quantum computers in a simple one-dimensional quantum mechanical model, using the formalism established in the work by Guo and Gasparian [Phys. Rev. D 108, 074504 (2023)] that relates the integrated correlation functions for a trapped system to the infinite volume scattering phase shifts through a weighted integral. The system is first discretized in a finite box with periodic boundary conditions, and the formalism in real time is verified by employing a contact interaction potential with exact solutions. Quantum circuits are then designed and constructed to implement the formalism on current quantum computing architectures. To overcome the fast oscillatory behavior of the integrated correlation functions in real-time simulation, different methods of postdata analysis are proposed and discussed. Test results on IBM hardware show that good agreement can be achieved with two qubits, but complete failure ensues with three qubits due to two-qubit gate operation errors and thermal relaxation errors.

Guo, Peng [Dakota State Univ., Madison, SD (United↗
DOE OSTI2022

Harvesting Wave Energy to Power Acoustic Transmitters Using Triboelectric Nanogenerator

Wave energy has the largest reserves and widest distribution among blue energy sources. However, the conversion and utilization of ocean wave energy are challenging. In this work, we developed a contact-separation mode triboelectric nanogenerator (TENG) with a simple structure for harvesting wave energy and powering marine sensors and transmitters and performed detailed electrical characterization under controlled laboratory conditions. A prototype power management circuit (PMC) was implemented to improve the output performance of the TENG. The output from the PMC could charge up a storage capacitor for powering sensors and electronics. Eventually, the TENG was integrated within a water-proof enclosure and tested using a custom-built wave simulator to evaluate the device performance in a more representative scenario. The device sustainably powered up an array of 27 LEDs and was able to charge up a capacitor up to 1.8 V for driving an acoustic transmitter. The results demonstrate that TENG technology shows great promise in harvesting low-frequency ocean wave energy.

Yang, Yang↗
NASA NTRS1977

Packaging of a large capacity magnetic bubble domain spacecraft recorder

A Solid State Spacecraft Data Recorder (SSDR), based on bubble domain technology, having a storage capacity of 10 to the 8th power bits, was designed and is being tested. The recorder consists of two memory modules each having 32 cells, each cell containing sixteen 100 kilobit serial bubble memory chips. The memory modules are interconnected to a Drive and Control Unit (DCU) module containing four microprocessors, 500 integrated circuits, a RAM core memory and two PROM's. The two memory modules and DCU are housed in individual machined aluminum frames, are stacked in brick fashion and through bolted to a base plate assembly which also houses the power supply.

Becker, F. J.↗
NASA NTRS1976

Real Time Dust Fall Monitor (RTDFM)

A prototype ultraviolet optical instrument designed and developed to monitor 300 level surface cleanliness is described. Size, weight, sensitivity, and simplicity design parameters were satisfied. Tests were conducted with various configurations of the detector array and sample surfaces. Circuit schematics are included. It is shown that output drift is due to effective lamp intensity variations. The instrument is intended to be a part of the integrated environmental contamination monitor of the space shuttle.

Claysmith, C. R.↗
NASA NTRS1993

Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters

Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.

Lee, C. I.↗
NASA NTRS2019

Overview of NASA's Solar Electric Propulsion Project

NASA is continuing to develop and qualify a state of the art 13 kW-class Advanced Electric Propulsion System (AEPS) for NASA exploration missions through a contract with Aerojet Rocketdyne (AR). An objective of the AEPS project is accelerate the adoption of high power electric propulsion technologies by reducing the risk and uncertainty of integrating Solar Electric Propulsion (SEP) technologies into space flight systems. NASA and AR have recently initiated testing of engineering hardware including the Hall Current Thruster (HCT), Power Processing Unit (PPU), and Xenon Flow Controller (XFC) at both the component and system levels. The successful completion of these tests will provide the required information to advance the AEPS system towards Critical Design Review. In support of the AEPS contract, NASA and JPL have been performing risk reduction activities to address specific concerns of this higher power Hall thruster propulsion system. These risk reduction activities have included long duration wear testing of the Technology Demonstration Unit (TDU) Hall thruster and cathode hardware, thermal cycling of TDU cathode heaters and coils, plasma plume measurements, and performed early circuit testing of the AEPS PPU design. In addition to the propulsion system development, the SEP project is developing the Plasma Diagnostic Package (PDP) and the SEP Testbed. The PDP is designed for use in conjunction with a high-powered electric propulsion (EP) system to characterize in-space operation. The SEP Testbed system is being developed to demonstrate integrated SEP system performance. The paper presents an overview of the NASA and the AEPS contract activities and a summary of the associated NASA in-house activities.

Plasma diagnostics package↗
DOE OSTI2025

Amine Structure Governs Corrosion Rates of Copper Catalysts in Electrochemical Reactive Capture of CO 2

Reactive capture of CO 2 (RCC) offers an integrated approach that combines CO 2 capture with its direct electrochemical conversion, eliminating the need for CO 2 release from the capture agent. By avoiding the pH, pressure, and temperature swings required for the release step, RCC has the potential to reduce both energy consumption and capital costs compared to the conventional sequential process of CO 2 capture, release, concentration, and conversion. Amines, widely used in industrial CO 2 capture, face challenges in RCC systems due to their incompatibility with transition metal catalysts as well as their tendency to promote electrode corrosion and parasitic hydrogen evolution. Identifying suitable combinations of amines and catalysts is therefore critical to enabling integrated CO 2 capture and conversion. Here, this work systematically investigates the performance of four primary and four secondary amines for RCC on polycrystalline Cu catalysts. Among the eight tested amines, only dimethylamine showed no measurable Cu corrosion near the open circuit potential. In contrast, ammonia, methylamine, ethylamine, monoethanolamine, diethylamine, diethanolamine, and piperazine all induced Cu corrosion. Corrosion rates correlate with the pK a and steric hindrance of the amines, highlighting key parameters for catalyst–amine codesign. Grand canonical DFT calculations indicate a correlation between the adsorption strength of protonated amines, their pK a , and the extent of Cu corrosion, suggesting that both the surface binding of protonated amines and the lability of their protons play critical roles in corrosion acceleration near open circuit potentials. These finding suggest that amines with high pK a values and weak binding of their protonated forms to Cu surfaces are preferred, as they offer better corrosion resistance.

Choi, Jounghwan [Univ. of California, Los Angeles,↗
DOE OSTI2023

High spatial resolution direct conversion amorphous selenium X-ray detectors with monolithically integrated CMOS readout

Recent progress in the field of micron-scale spatial resolution direct conversion X-ray detectors for high-energy synchrotron light sources serve applications ranging from nondestructive and noninvasive microscopy techniques which provide insight into the structure and morphology of crystals, to medical diagnostic measurement devices. Amorphous selenium ( a -Se) as a wide-bandgap thermally evaporated photoconductor exhibits ultra-low thermal generation rates for dark carriers and has been extensively used in X-ray medical imaging. Being an amorphous material, it can further be deposited over large areas at room temperatures and at substantially lower costs as compared to crystalline semiconductors. Here, to address the demands for a high-energy and high spatial resolution X-ray detector for synchrotron light source applications, we have thermally evaporated a -Se on a Mixed-Mode Pixel Array Detector (MM-PAD) Application Specific Integrated Circuit (ASIC). The ASIC format consists of 128 × 128 square pixels each 150 μm on a side. A 200 μm a -Se layer was directly deposited on the ASIC followed by a metal top electrode. The completed detector assembly was tested with 45 kV Ag and 23 kV Cu X-ray tube sources. The detector fabrication, performances, Modulation Transfer Function (MTF) measurements, and simulations are reported.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Rotational fluid flow experiment: WPI/MITRE advanced space design GASCAN 2

The design and implementation is examined of an electro-mechanical system for studying vortex behavior in a microgravity environment. Most of the existing equipment was revised and redesigned as necessary. Emphasis was placed on the documentation and integration of the mechanical and electrical subsystems. Project results include the reconfiguration and thorough testing of all the hardware subsystems, the implementation of an infrared gas entrainment detector, new signal processing circuitry for the ultrasonic fluid circulation device, improved prototype interface circuits, and software for overall control of experiment design operation.

Daly, Walter F.↗
NASA NTRS1977

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented.

Woo, D. S.↗
NASA NTRS2004

Power Actuation and Switching Module Development

The Deep Space Avionics (DSA) Project is developing a Power Actuation and Switching Module (PASM). This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an A SIC process that is tolerant of high radiation. The development includes two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs, It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Threeway majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper describes the development process used to design, model, fabricate, and test these compact and versatile power switches. Preliminary test results from prototype HDI PASM hardware are also discussed.

Power Actuation and Switching Module (PASM)↗
NASA NTRS1995

Power control electronics for cryogenic instrumentation

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Ray, Biswajit↗
NASA NTRS2000

Displacement Damage in Bipolar Linear Integrated Circuits

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

Rax, B. G.↗
NASA NTRSDate not supplied

Advancing Metasurfaces Towards New Frontiers: Nonvolatile Reconfigurable Optics

The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space communications. In this study, we report on the design, fabrication, testing, and modeling of electrically reconfigurable metasurfaces using a low-loss high contrast phase change material, Ge2Sb2Se4Te integrated with an IR-transparent silicon microheater. Through this work, we introduce a reliable architecture for switching PCM-based metasurfaces within an integrated circuit configuration which is compatible with standard foundry fabrication processes. We demonstrate the capability of controlling the transmission of electromagnetic waves through the precise stimulation of PCM-based pixels, each spanning a few hundred microns, over numerous cycles. By leveraging PCM-based pixels, we unlock the potential to create metasurfaces encompassing a diverse range of functionalities such as dielectric filters, metalens, or beam steering devices, which is governed by the design of the meta-atoms. Further, we perform an in-depth investigation into the failure mechanism utilizing techniques such as Fourier transform IR spectroscopy (FTIR), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermal modeling. According to our results, due to a sharp temperature rise at the PCM/heater interface, we observe severe delamination of the PCM from the heater. More uniform PCM deposition, better adhesion at the PCM/heater interface, and a more uniform temperature distribution in the device could potentially mitigate the failure and lead to a longer life-time. By addressing these challenges, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics.

Phase change material↗
NASA NTRS1974

SEM evaluation of metallization on semiconductors

A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.

Fresh, D. L.↗