SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Lyman alpha observations from the Ultraviolet Spectrometer Polarimeter (UVSP) instrument of the Solar Maximum Mission (SMM) spacecraft were analyzed and provide instrumental calibration details. Specific values of the instrument quantum efficiency, Lyman alpha absolute intensity, and correction for geocoronal absorption are presented.
Available solid state photomultiplier (SSPM) detectors were tested under low-background, low temperature conditions to determine the conditions producing optimal sensitivity in a space-based astronomy system such as a liquid cooled helium telescope in orbit. Detector temperatures varied between 6 and 9 K, with background flux ranging from 10 to the 13th power to less than 10 to the 6th power photons/square cm-s. Measured parameters included quantum efficiency, noise, dark current, and spectral response. Experimental data were reduced, analyzed, and combined with existing data to build the SSPM data base included herein. The results were compared to analytical models of SSPM performance where appropriate models existed. Analytical models presented here were developed to be as consistent with the data base as practicable. Significant differences between the theory and data are described. Some models were developed or updated as a result of this study.
The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) instrument uses four separate focal plane assemblies consisting of line array detectors that are multiplexed to a common J-FET preamp using a FET switch multiplexing (MUX) technique. A 32-element silicon line array covers the spectral range from 0.41 to 0.70 microns. Three additional 64-element indium antimonide (InSb) line arrays cover the spectral range from 0.68 to 2.45 microns. The spectral sampling interval per detector element is nominally 9.8 nm, giving a total of 224 spectral channels. All focal planes operate at liquid nitrogen temperature and are housed in separate dewars. Electrical performance characteristics include a read noise of less than 1000 e(-) in all channels, response and dark nonuniformity of 5 percent peak to peak, and quantum efficiency of greater than 60 percent.
The performance requirements for scientific-quality CCDs are discussed, focusing on the design of two devices, and the progress toward achieving the desired performance is discussed. These devices are intended for rear-illuminated applications and have 512 x 512 and 2048 x 2048 pixel formats. The thinned 10 to 20 micron thick Si membrane is fully supported by a unique glass ceramic substrate. Quantum efficiencies of greater than 70 percent at 700 nm and greater than 40 percent at wavelengths less than 400 nm have been measured on a test device. Dark currents as low as 6 pA/sq cm also have been measured recently.
The far-UV and XUV detector calibration services at NBS, the properties of the detectors, and the spectrometer calibration facilities at the Synchrotron Ultraviolet Radiation Facility (SURF II) at NBS are described. The method used to calibrate the quantum efficiency of windowless photodiode detectors in the ionization chamber, and the facilities for calibrating photodiodes at various wavelengths are discussed. The cathode and anode of the windowless photodiodes and their operation are examined. Consideration is given to the calculation of spectral irradiance from SURF II; the two stations of the spectrometer facility; the large spectrometer calibration chamber; and sources of error in flux determinations for SURF II.
The design, fabrication, and test performance of a grazing-incidence diverging magnifier (GIDM) for use in high-resolution X-ray imaging of the solar corona are described. The GIDM, designed to be mounted in front of the focus of a 30.48-cm Wolter-Schwarzschild primary, is an Ni-coated Be hyperboloid-hyperboloid structure of principal diameter 3.15 cm; the two components are mounted on a central steel plate which acts as a support and spacer. The combined instrument has overall length 1.9 m, effective focal length 5.4 m, and plate scale 26.0 micron/arcsec. In point- and line-source measurements in an 89.5-m vacuum test facility, the on-axis resolution is shown to be equal to that of the primary alone. The field of view for 1-arcsec resolution is limited to 1.25 arcmin in radius, but the effective-area limitation is less significant when CCD detectors of high quantum efficiency are used instead of film.
The properties of In(0.24)Ga(0.76)As/GaAs and GaAs/In(0.05)Ga(0.58)Al(0.37)As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times about 60-100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5-10 nA at 10 V are about 0.4 A/W, which correspond to peak external quantum efficiencies of about 60 percent. These results indicate that very high performance photodiodes can be realized with strained layers.
An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-IR photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microns, which was operated at a temperature of 2.0 K and a bias voltage equal to one-half of the breakdown voltage.
The ACIS experiment consists of an array of charge coupled device (CCD) chips placed at the focus of the AXAF mirror assembly. The instrument offers a powerful combination of the best qualities of the entire generation of Einstein Observatory detectors. The pixel size is well matched to the resolution of the telescope, while the high quantum efficiency nondispersive spectroscopy capability means that every object imaged will produce a moderate resolution spectrum. In conjunction with the objective gratings the energy resolution increases to 1000 with a loss of efficiency of only 50 percent. While the great capability of ACIS will naturally make it attractive for a wide range of AXAF investigations, ACIS has a particular advantage in fields where it can simultaneously acquire imaged spectra of many objects. These include compact star clusters, star formation regions, the nuclear regions of nearby galaxies, entire galaxies in the Virgo Cluster and the entire Coma Cluster.
The High Resolution Camera being developed for AXAF is briefly described, comparing it with its predecessor, the Einstein HRI, and providing preliminary performance data. The HRC is a 10 cm x 10 cm detector with CsI coated microchannel plates providing a large field of view device with high X-ray quantum efficiency. The overall sensitivity of the HRC on AXAF is about 50 times that of the Einstein HRI. An example of the power of this instrument is discussed in the context of studies of distant clusters of galaxies. The HRC can detect individual galaxies in a cluster of redshift 1, if they are similar to the early-type galaxies in nearby clusters that have been observed by the Einstein instruments. The HRC will be used to measure the luminosity function for clusters of galaxies as a function of their distance up to a redshift of 1. This will allow observation of evolutionary effects in clusters as a whole, while the detection of individual galaxies will permit studies of galaxy evolution in a cluster environment.
Dye laser gains were measured at various pump-beam irradiances on a dye cell in order to evaluate the feasibility of solar pumping. Rhodamine 6G dye was considered as a candidate for the solar-pumped laser because of its high utilization of the solar spectrum and high quantum efficiency. Measurements show that a solar concentration of 20,000 is required to reach the threshold of the dye.
Thermal detectors for X-ray spectroscopy combining high spectral resolution and quantum efficiency have been developed. These microcalorimeters measure the energy released in the absorption of a single photon by sensing the rise in temperature of a small absorbing structure. The ultimate energy resolution of such a device is limited by the thermodynamic power fluctuations in the thermal link between the calorimeter and isothermal bath and can in principle be made as low as 1 eV. The performance of a real device is degraded due to noise contributions such as excess 1/f noise in the thermistor and incomplete conversion of energy into phonons. The authors report some recent advances in thermometry, X-ray absorption and thermalization, fabrication techniques, and detector optimization in the presence of noise. These improvements have resulted in a device with a spectral resolution of 17 eV FWHM, measured at 6 keV.
Al(0.3)Ga(0.7)As/Al(0.05)Ga(0.95)As double-heterostructure light-emitting diodes (LEDs) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The edge-emitting LEDs had diode ideality factors of 1.54 at a forward-biased voltage higher than 0.9 V and external quantum efficiencies of 0.0033 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LEDs fabricated on the GaAs substrates by liquid phase epitaxy.
Some populations of objects in the solar system are still poorly known, and the long-range goal of this program is to improve that situation. For instance, the statistics of Trojan asteroids are uncertain, while previous serveying indicates there is an appreciable systematic difference between the L-4 and L-5 regions, which is hard to explain. Researchers are developing for this goal a new technique of sky surveillance, namely scanning with a charge coupled device (CCD). With its quantum efficiency and wavelength range greater than that of photographic plates, the CCD should be especially valuable for fast-moving objects such as near-Earth asteroids. A 320 x 512 pixel CCD has been in operation since 1983 on a telescope that is dedicated during the dark half of each month to sky surveillance, that is the Spacewatch Telescope which is the 91-cm Newtonian reflector of the Steward Observatory on Kitt Peak. The system was found to be of special value for astrometry. The telescope drive is turned off at a selected distance west of the object and the scan is continued such that the number of astrometric standards is optimized. Because the drive is off, the effects of refraction practically vanish.
A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.
Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.
The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) instrument uses four separate focal plane assemblies consisting of line array detectors that are multiplexed to a common J-FET preamp using a FET switch multiplexing (MUX) technique. A 32-element silicon line array covers the spectral range from 0.41 to 0.70 microns. Three additional 64-element indium antimonide (InSb) line arrays cover the spectral range from 0.68 to 2.45 microns. The spectral sampling interval per detector element is nominally 9.8 nm, giving a total of 224 spectral channels. All focal planes operate at liquid nitrogen temperature and are housed in separate dewars. Electrical performance characteristics include a read noise of less than 1000 e(-) in all channels, response and dark nonuniformity of 5 percent peak to peak, and quantum efficiency of greater than 60 percent.
A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.