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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Development of a Cryogen-Free Continuous ADR for the Constellation-X Mission

Constellation-X is a multi-satellite x-ray astronomy mission presently being planned for launch in the 2010 time frame. Each of 4 identical satellites will contain a telescope and instruments for imaging and spectroscopic analysis of both hard and soft x-rays. The X- ray Microcalorimeter Spectrometer (XMS) instrument will use arrays of microcalorimeters to detect X-rays with energies from 0.2 to 6 keV. The technologies under development for this instrument include Transition-Edge Sensors (TES) with multiplexed SQUID readouts and NTD-Ge detectors with JFET readouts. Both will be operated at temperatures in the 50-60 mK range and both have a projected cooling power requirement of approximately 5 microwatts. In addition, in order to meet the lifetime requirement of 6 years (with a goal of 10 years), a mechanical cryocooler will be used to provide a heat sink for the low temperature cooler. The required performance is 20 mW at 6 K, with a goal of 4 K operation. In this paper we present the development status of an adiabatic demagnetization refigerator (ADR) that meets the cooling requirements of the X M S instrument. At present we have demonstrated a 4-stage ADR that operates continuously at 50 mK using a 4.2 K helium bath as a heat sink. The cooling power is 21 microwatts at 100 mK and 6 microwatts at 50 mK. Its efficiency when operating at 50 mK is 1 1 % of Carnot (accounting for all dissipation at 4.2 K and below, but not including power dissipation in the room temperature electronics), but this is expected to rise to 25% in the next generation system in which active gas-gap heat switches are replaced with passive devices. This will reduce the peak heat rejection rate of the ADR to less than 7 mW at 6 K. Details of the ADR s design and operation, as well as the development program leading up to a flight-qualified instrument, will be discussed.

Shirron, Peter↗
NASA NTRS2001

Using Dynamic Interface Modeling and Simulation to Develop a Launch and Recovery Flight Simulation for a UH-60A Blackhawk

Joint Shipboard Helicopter Integration Process (JSHIP) is a Joint Test and Evaluation (JT&E) program sponsored by the Office of the Secretary of Defense (OSD). Under the JSHDP program is a simulation effort referred to as the Dynamic Interface Modeling and Simulation System (DIMSS). The purpose of DIMSS is to develop and test the processes and mechanisms that facilitate ship-helicopter interface testing via man-in-the-loop ground-based flight simulators. Specifically, the DIMSS charter is to develop an accredited process for using a flight simulator to determine the wind-over-the-deck (WOD) launch and recovery flight envelope for the UH-60A ship/helicopter combination. DIMSS is a collaborative effort between the NASA Ames Research Center and OSD. OSD determines the T&E and warfighter training requirements, provides the programmatics and dynamic interface T&E experience, and conducts ship/aircraft interface tests for validating the simulation. NASA provides the research and development element, simulation facility, and simulation technical experience. This paper will highlight the benefits of the NASA/JSHIP collaboration and detail achievements of the project in terms of modeling and simulation. The Vertical Motion Simulator (VMS) at NASA Ames Research Center offers the capability to simulate a wide range of simulation cueing configurations, which include visual, aural, and body-force cueing devices. The system flexibility enables switching configurations io allow back-to-back evaluation and comparison of different levels of cueing fidelity in determining minimum training requirements. The investigation required development and integration of several major simulation system at the VMS. A new UH-60A BlackHawk interchangeable cab that provides an out-the-window (OTW) field-of-view (FOV) of 220 degrees in azimuth and 70 degrees in elevation was built. Modeling efforts involved integrating Computational Fluid Dynamics (CFD) generated data of an LHA ship airwake and integrating a real-time ship motion model developed based on a batch model from Naval Surface Warfare Center. Engineering development and integration of a three degrees-of-freedom (DOF) dynamic seat to simulate high frequency rotor-dynamics dependent motion cues for use in conjunction with the large motion system was accomplished. The development of an LHA visual model in several different levels of resolution and an aural cueing system in which three separate fidelity levels could be selected were developed. VMS also integrated a PC-based E&S simFUSION system to investigate cost effective IG alternatives. The DIMSS project consists of three phases that follow an approved Validation, Verification and accreditation (VV&A) process. The first phase will support the accreditation of the individual subsystems and models. The second will follow the verification and validation of the integrated subsystems and models, and will address fidelity requirements of the integrated models and subsystems. The third and final phase will allow the verification and validation of the full system integration. This VV&A process will address the utility of the simulated WOD launch and recovery envelope. Simulations supporting the first two stages have been completed and the data is currently being reviewed and analyzed.

Sweeney, Christopher↗
NASA NTRS2012

Dynamically variable spot size laser system

A Dynamically Variable Spot Size (DVSS) laser system for bonding metal components includes an elongated housing containing a light entry aperture coupled to a laser beam transmission cable and a light exit aperture. A plurality of lenses contained within the housing focus a laser beam from the light entry aperture through the light exit aperture. The lenses may be dynamically adjusted to vary the spot size of the laser. A plurality of interoperable safety devices, including a manually depressible interlock switch, an internal proximity sensor, a remotely operated potentiometer, a remotely activated toggle and a power supply interlock, prevent activation of the laser and DVSS laser system if each safety device does not provide a closed circuit. The remotely operated potentiometer also provides continuous variability in laser energy output.

Gradl, Paul R.↗
NASA NTRS2010

Carbon Nanotube-Based Digital Vacuum Electronics and Miniature Instrumentation for Space Exploration

JPL has developed high performance cold cathodes using arrays of carbon nanotube bundles that produce > 15 A/sq cm at applied fields of 5 to 8 V/micron without any beam focusing. They have exhibited robust operation in poor vacuums of 10(exp -6) to 10(exp -4) Torr- a typically achievable range inside hermetically sealed microcavities. Using these CNT cathodes JPL has developed miniature X-ray tubes capable of delivering sufficient photon flux at acceleration voltages of <20kV to perform definitive mineralogy on planetary surfaces; mass ionizers that offer two orders of magnitude power savings, and S/N ratio better by a factor of five over conventional ionizers. JPL has also developed a new class of programmable logic gates using CNT vacuum electronics potentially for Venus in situ missions and defense applications. These digital vacuum electronic devices are inherently high-temperature tolerant and radiation insensitive. Device design, fabrication and DC switching operation at temperatures up to 700 C are presented in this paper.

Carbon Nanotube↗
DOE OSTI2020

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2- x systems such as HfO 2- x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A Control Scheme to Mitigate the Dead-Time Effects in a Wireless Power Transfer System

In practice, a dead-time is always provided between the complementary switching instances of the inverter phase-leg devices. At higher operating frequencies, the dead-time issues in wireless power transfer (WPT) systems become critical, especially as the power level increases. In certain operating conditions, the dead-time effect in wireless power transfer system affects the switching characteristics. Consequently, the switching losses in the power semiconductor devices increase and also impact the efficiency of the overall system. In this paper, a simple control scheme is proposed to eliminate the dead-time effect (or voltage polarity reversal) in the WPT inverter. The proposed control scheme monitors the inverter output voltage, and the switching frequency is auto-tuned to eliminate the undesired switching instances in the inverter voltage. The proposed control scheme is validated using the closed-loop simulations in PLECS, and the experimental results on a 5.6 kW WPT prototype are also presented. After eliminating the voltage-polarity-reversal at the inverter output, the inverter losses were reduced by ~40%, and the overall system losses were reduced by ~17%.

Kavimandan, Utkarsh↗
NASA NTRS1995

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Moise, T. S.↗
DOE OSTI2025

Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Nonvolatile resistive switching in two-dimensional monolayers opens a new avenue for high-density memory/computing devices. However, questions remain as to why the current on/off ratio and switching voltage vary significantly among different devices. Here, we simulate electronic transport of large systems consisting of a h-BN monolayer sandwiched by gold electrodes, enabled by an implementation of the nonequilibrium Green’s function method in the exascale density functional theory (DFT) code: Real-space MultiGrid. Systematic calculations reveal that the wide range of on/off ratios is due to variations in interface distances between the electrode and h-BN that significantly modulate their wavefunction overlap. In addition, DFT calculations demonstrate that the energy barrier of a gold atom dissociating from the electrode to h-BN increases dramatically with the interface distance, thereby explaining the strong dependence of the switching voltage on distance. Our work demonstrates the significance of interface distance in governing the current on/off ratio and switching voltage.

Electronic devices↗
NASA NTRS1975

Ovonic type switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

Baxter, C. R.↗
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗
DOE OSTI2022

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS2016

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗
DOE OSTI2025

Tracking oxygen vacancy migration in memristor devices using operando hard X-ray photoelectron spectroscopy

Fabrication of ultrathin (sub-2 nm) oxide semiconductor memristors poses the fundamental challenge of achieving oxide growth with atomic precision in terms of electronic structure and defect formation. Recently, ultrathin memristors consisting of bilayers of mixed Al 2 O 3 and MgO atomic layers were fabricated using an in vacuo atomic layer deposition process. This approach offers a unique platform for precise atomic control of oxygen vacancies in the device in which the vacancies are introduced by placing MgO atomic layers between pristine Al 2 O 3 layers. In this work, we present a systematic operando Hard X-ray PhotoElectron Spectroscopy (HAXPES) study of the switching of such memristors, combined with complementary current-voltage and capacitance-voltage (C-V) measurements. We used a memristor stack of Al 2 O 3 /MgO atomic layers, with the MgO-containing oxide deposited on the bottom Al metal electrode and a pure Al 2 O 3 layer below the top Pd electrode. HAXPES analysis shows a substantial change in the chemical shift of the Aluminum oxide when switching between the ”OFF” and ”ON” states indicative of a redistribution of oxygen vacancies in the device active layer. Interestingly, subsequent switching to the OFF state shows hysteretic behavior indicating the retention of some oxygen vacancies in the top Al 2 O 3 layer. This vacancy retention can be correlated with the stochastic behavior of the switching voltage observed in these devices. C–V measurements show a clear frequency-dependent response in the OFF state, consistent with enhanced polarization and vacancy trapping at low frequencies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗
NASA NTRS1973

Synchro phase selector aid

Phase selector permits multiple leads of synchro devices to be randomly connected while proper interconnections are determined by operating selector switches. Operation of these switches varies both phase and rotation relationship of synchro devices.

Austin, F. H.↗
NASA NTRS2007

Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

Abdeldayem, Hossin↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗