Defect-Concentration Dependence of Annealing Rate in Silicon
Defect concentration dependence of isothermal annealing rate of electron bombardment induced radiation defects in lithium doped n-type silicon
Fang, P. H.↗
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Automatic cross-sectioning and monitoring system locates defects in electronic devices
System consists of motorized grinding and lapping apparatus, sample holder, and electronic control circuit. Low power microscope examines device to pinpoint location of circuit defect, and monitor displays output signal when defect is located exactly.
Jacobs, G.↗
New detection method for rolling element and bearing defects
Instrument for detecting defects in rolling elements of bearings is described. Detection depends on rate at which rolling elements impact defect and establishes envelope amplitude of ball resonant frequency. Block diagram of instrument is provided and results obtained in conducting tests are reported.
Burchill, R. F.↗
Precise measurement of charged defects in III-V compounds (2)
The main objective of this research is to obtain a calibration of a low concentration of charged defects in some III-V semiconducting compounds. The experimental technique being used is nuclear magnetic resonance (NMR), and the objective is to be attained through a thorough examination of the properties of the NMR lines of the nuclei in the III-V compounds. The properties of the NMR lines, and how they are influenced by the presence of charged defects are studied theoretically and experimentally.
Soest, J. F.↗
Phonons in quantum solids with defects
A formalism was developed for temperature-dependent, self-consistent phonons in quantum solids with defects. Lattice vacancies and interstitials in solid helium and metallic hydrogen, as well as electronic excitations in solid helium, were treated as defects that modify properties of these systems. The information to be gained from the modified phonon spectrum is discussed.
Jacobi, N.↗
Orientation dependence of defect structure in EFG silicon ribbons
Sustained growth of long lengths of silicon ribbons by the edge-defined film-fed growth (EFG) technique is shown to result in the attainment of an 'equilibrium' defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a specific ribbon orientation. The influence of seed orientation on the attainment of this structure has been examined.
Garone, L. C.↗
Window defect planar mapping technique
A method of planar mapping defects in a window having an edge surface and a planar surface. The method is comprised of steps for mounting the window on a support surface. Then a light sensitive paper is placed adjacent to the window surface. A light source is positioned adjacent to the window edge. The window is then illuminated with the source of light for a predetermined interval of time. Defects on the surface of the glass, as well as in the interior of the glass are detected by analyzing the developed light sensitive paper. The light source must be in the form of optical fibers or a light tube whose light transmitting ends are placed near the edge surface of the window.
Minton, F. R.↗
Sodium ions at defect sites at SiO2/Si interfaces as determined by X-ray photoelectron spectroscopy
X-ray photoelectron spectroscopy (XPS) is described in its application as a probe for studying defects such as sodium in SiO2 films. A general description is given of key experimental methods in XPS. Techniques are described for applying and monitoring a fixed bias at the surface of the oxide during the XPS measurement. These methods are shown to be capable of detecting extremely small Na and Cu concentrations in undoped samples (less than 10 to the 11th power per cu cm). In deliberately Na-doped samples, five spectral peaks are distinctly observed and related to different defect states at the vacuum/SiO2 and SiO2/Si interfaces. By applying a bias-temperature stress during the XPS measurements, these peaks change in relative intensity and can be related to the motion of the Na(+) ions between different states occurring at the two interfaces. An attempt is made to correlate the observations with previously reported models.
Grunthaner, F. J.↗
Germination-defective mutant of Neurospora crassa that responds to siderophores
A conditionally germination-defective mutant of Neurospora crassa has been found to be partially curable by ferricrocin and other siderophores. The mutant conidia rapidly lose their membrane-bound siderophores when suspended in buffer or growth media. Germination is consequently delayed unless large numbers of conidia are present (positive population effect). This indicates that the mutant has a membrane defect involving the siderophore attachment site.
Charlang, G.↗
Structure and electrical activity of planar defects in EFG ribbons
Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.
Ast, D. G.↗
Measurements of pulse-height defect in Au-Si detectors for H, He, C, N, O, Ne, Ar, Kr from about 2 to 400 keV/nucleon
We report measurements of pulse-height defects in Si surface-barrier detectors for a variety of ions and energies. We find: (1) for ions up to Ne our measurements agree remarkably well with calculations based on energy loss and nuclear defect theory, (2) for heavier ions we find systematic deviations, (3) there is no evidence of a dead layer at the Si-Au interface, and (4) our measurements are consistently reproducible for detectors fabricated in our laboratory.
Ipavich, F. M.↗
Response of defects to illumination in silicon solar cells
The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.
Hari Rao, C. V.↗
Composite components under impact load and effects of defects on the loading capacity
Investigations were carried out on a horizontal tail assembly made of carbon fiber reinforced plastic for the Alpha Jet. The possibility of obtaining a leading edge nose design lighter but not more expensive than a metal version was studied. An important consideration was sufficient resistance of the leading edge against impact of stones and hailstones combined with high degree of stiffness. The improvement of energy reception characteristics of the materials through suitable laminate design was considered. Since certain defects occur in structural components, the effects of such defects on the characteristics of the parts were also studied.
Aoki, R.↗
Scattering defects in silver mirror coatings
Scatter centers common to protected silver have been investigated on a variety of space flight quality mirrors. The defects have been characterized as to number density, size, location within the film layer structure, and dependence on illumination angle. In addition the total integrated scatter values as a function of wavelength, humidity test soak time, and temperature have been determined for some mirrors. These submicrometer sized defects are believed to be the precursors of silver corrosion spots. A mechanism for their generation is proposed, and measures to reduce their occurrence are suggested.
Pellicori, S. F.↗
Defect structure of web silicon ribbon
The results of a preliminary study of two dendritic web samples are presented. The structure and electrical activity of the defects in the silicon webs were studied. Optical microscopy of chemically etched specimens was used to determine dislocation densities. Samples were mechanically polished, then Secco etched for approximately 5 minutes. High voltage transmission electron microscopy was used to characterize the crystallographic nature of the defects.
Cunningham, B.↗
Defect structure of EFG silicon ribbon
The defect structure of EFG ribbons was studied using EBIC, TEM and HVEM. By imaging the same areas in EBIC and HVEM, a direct correlation between the crystallographic nature of defects and their electrical properties was obtained. (1) Partial dislocations at coherent twin boundaries may or may not be electrically active. Since no microprecipitates were observed at these dislocations it is likely that the different electrical activity is a consequence of the different dislocation core structures. (2) 2nd order twin joins were observed which followed the same direction as the coherent first order twins normally associated with EFG ribbons. These 2nd order twin joins are in all cases strongly electrically active. EFG ribbons contain high concentrations of carbon. Since no evidence of precipitation was found with TEM it is suggested that the carbon may be incorporated into the higher order twin boundaries now known to exist in EFG ribbons.
Strunk, H.↗
Stress concentration in the vicinity of a hole defect under conditions of Hertzian contact
Two dimensional photoelastic stress analyses were conducted for epoxy resin models containing a hole defect under the conditions of Hertzian contact. Stress concentrations around the defect were determined as a function of several parameters. The effect of tangential traction on the stress concentration was also determined. Sharp stress concentrations occur in the vicinity of both the left and the right side of the hole. The stress concentration becomes more distinct the larger the hole diameter and the smaller distance between the hole and the contact surface. The stress concentration is greatest when the disk imposing a normal load is located at the contact surface directly over the hole. The magnitude and the location of stress concentration varies with the distance between the Hertzian contact area and the hole. The area involved in a process of rolling contact fatigue is confined to a shallow region at both sides of the hole. It was found that the effect of tangential traction is comparatively small on the stress concentration around the hole.
Yamamoto, T.↗
Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells
The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.
Li, S. S.↗