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At least 505 records · Page 28

A Low-Power and In Situ Annealing Mitigation Technique for Fast Neutrons Irradiation of Integrated Temperature Sensing Diodes

High doses of fast neutrons is detrimental to the performance of most common solid-state devices such as diodes and transistors. The ionizing effect is observed in particular for diodes used as simple integrated temperature sensors, or thermo-diodes, when their junction voltage is measured at constant current bias. In this work, we present a low-power and in situ mitigation technique based on Silicon-on-Insulator (SOI) micro-hot-plates to recover thermo-diodes. The basic operating principle consists in annealing the temperature-sensitive diodes integrated on the membrane during or after their irradiation in order to restore similar sensing characteristics over time. We measured thermo-diodes integrated to micro-hot-plates during their irradiation by fast neutrons (23 MeV peak) with total doses about 2.97±0.08 kGy. The membrane annealing is taking place at 450 deg. C using 40 mW of electrical power. Thanks to the annealing, the diode keeps a total measurement error below 0.5 deg. C. In this harsh radiation environment and beside the good tolerance of the thermo-diodes and the membrane materials to the total ionizing dose, the thermo-diode located on the heating membrane keeps a constant sensitivity. The demonstrated resistance of micro-hot-plates and the integrated thermo-diodes to fast neutron radiations can extend their use in nuclear plants and for radiation detectors. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Structural Changes in YBa 2 Cu 3 O 7 Thin Films Modified with He + -Focused Ion Beam for High-Temperature Superconductive Nanoelectronics

Irradiation of high-temperature superconductor YBa 2 Cu 3 O 7 (YBCO) with high-energy He + ions is known to cause structural changes in the YBCO film, decreasing the critical temperature T C and finally leading to a superconductor-to-insulator transition. Here, this allows one to pattern narrow insulating regions with a focused ion beam (FIB) and thus fabricate nanoscale Josephson junctions on YBCO films. Moreover, such ion irradiation is known to cause structural changes in the YBCO film. However, details of how these structural changes occur in nanoscale devices produced by FIB remain unknown. Using nanofocus X-ray diffraction, we study the changes in the YBCO crystal lattice and investigate how the nature of these changes depends on the size of the irradiated regions. These data provide an important understanding of how oxide superconductors can be tailored at the nanometer scale for various applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Baseline Performance Reference for Irradiance in PV System Applications

This report proposes the definition of a new baseline performance reference (BPR). The definition goes beyond existing standards pertaining to photovoltaic (PV) reference cells and devices to define the response under all possible operating conditions in the field. Field evaluations using BPR devices will be more sensitive to performance anomalies than pyranometers because they track PV system power output more closely. At the same time, they will be able to detect a broader range of performance anomalies than traditional matched reference devices, which might have matching defects. The BPR definition also opens the door to new practices in resource assessment and yield prediction. Solar resource data can be collected or modeled and validated directly as BPR irradiance, and PV system simulations based on BPR irradiance need fewer assumptions and less processing to obtain the effective irradiance on modules. As a result, lower uncertainty in yield assessments can be expected.

14 SOLAR ENERGY↗

MPEX High Heat Flux Plasma Dump Design, Manufacture, and Articles Test

Here, the Material Plasma Exposure eXperiment (MPEX) device is a steady-state linear plasma device currently in the final design phase at the Oak Ridge National Laboratory. This device will reach ion fluences up to 10 31 m -2 and will be used to expose neutron-irradiated materials to divertor-relevant plasmas and to study the effects of plasma-material interactions. These studies will elucidate the complex effects of plasmas with divertor candidate materials capable of withstanding high heat flux and high fluences for next-generation fusion devices. Bidirectional plasma will be generated using a high-power (200 kW) helicon source. Plasma will be confined by superconducting magnets. The last plasma-facing component on the upstream side of the MPEX device is the dump, which has been designed to intercept plasma and energetic particles. The dump will have a total heat load of 9.2 kW. A copper alloy (Glidcop AL-15) was selected for use in the water-cooled flange design because of its high thermal conductivity, its retaining strength at elevated temperatures, and its ability to be used in the high-temperature braze joints used in this application. Titanium-zirconium-molybdenum (TZM) tiles are brazed to the Glidcop AL-15 flange using high-temperature braze alloy. External water-cooling channels are used on the dump flange to prevent water leakage inside the vacuum space. This article discusses the details of the high heat flux dump design, including the computational fluid dynamics (CFD) and structural analyses performed to validate the design to meet the operational requirements of the MPEX device.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Fabrication and Magnetic Characterization of CFO/NiO and CFO/NiS Heterostructures

Magnetic analysis of different magnetic bilayers and multilayers is an important step for designing next-generation multiferroic heterostructures. In this study, we have investigated the magnetic interaction at the interface in CFO/NiO hetero-structures grown by pulsed laser deposition on sapphire substrates. The thin film heterostructure samples were characterized by means of X-ray diffraction, scanning electron microscopy (SEM), energy disruptive X-ray spectroscopy (EDS), and superconducting quantum interference device (SQUID) for magnetic measurements. The XRD analysis on different samples shows the crystalline growth of the thin films. The SEM-EDS analysis provides information about structural and elemental compositions of the heterostructure films. A SQUID magnetometer was used to investigate the temperature and field-dependent magnetic properties. To better understand the magnetic properties of the thin film heterostructure samples, zero field cool (ZFC) and field cool (FC) magnetization data were analyzed. At low temperature, ferromagnetic hysteresis loop was observed. A shift in the M-H hysteresis curve was observed for the FC data from the ZFC data, which indicates the presence of exchange bias effect. In addition, we have examined the effect of antiferromagnetic NiS thin films on ferromagnetism of CFO. This study on the magnetic interaction between a ferromagnetic layer and an antiferromagnetic layer can advance the frontier for applications in spin valves, magnetic sensors, and magnetic random access memory.

36 MATERIALS SCIENCE↗

Analysis of WIRE-21 SPND and Optical Fiber Sensor Measurements

The Wireless Instrumented RB Experiment 2021 (WIRE-21) was a highly instrumented experiment designed to test prototype wireless temperature and pressure sensors developed by Westinghouse Electric Corporation (WEC) in the High Flux Isotope Reactor (HFIR). In addition to these sensors, a suite of other sensors was also integrated into the experiment capsule, including various types of distributed optical fiber sensors and self-powered neutron detectors (SPNDs). This report presents an analysis of the data generated by the SPNDs and optical fiber sensors that were tested under the highest reported neutron flux. The distributed optical fiber sensor results demonstrate that F-doped optical fibers, particularly those inscribed with fs fiber Bragg gratings (FBGs), are capable of surviving fast neutron fluences on the order of 1021 n fast /cm 2 at temperatures relevant to light-water reactors (between 200 and 400°C). However, a significant blue-shift in the optical spectra of these sensors was observed over the course of irradiation which cannot be explained based on the current understanding of radiation-induced compaction in fused silica glass. A mechanistic understanding of this drift has not yet been developed and is proposed as future scope under the Advanced Sensors and Instrumentation program. Of the four SPNDs, only one appeared to operate normally during three cycles of irradiation. A radiation transport model of the experiment in HFIR was used to determine time-dependent neutron flux in this SPND and to calculate the neutron sensitivity of the device. Results showed a cycle averaged sensitivity of 1.5 ×10 -22 and 1.4 ×10 -22 A/nν for the first and third cycles of irradiation, respectively. Additional details pertaining to the optical fibers and SPNDs are included herein.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

In-Situ Laser-Induced-Desorption-Spectroscopy Diagnostic Deployment on the Linear Plasma Device CSDX

A calibrated laser induced desorption diagnostic (LIDS) concept is developed under this award for application to fusion relevant plasma materials interactions studies. Small areal amounts of hydrogenic release from a deuterium filled PMI target are measured and quantified when irradiated by a LID flash heat event on the target surface. Good success was demonstrated by this project with the PISCES-E rf plasma device at UCSD by fully quantified measurement and removal of D from W-D co-deposit layers in experiments. However, adapting the LIDS technique to D plasma exposed W targets in the linear plasma CSDX device, now labelled PISCES-Rf, was prone to several technical challenges ranging from target line of sight access, laser focusing, and loss of optical spectroscopic signal strength in the larger PISCES-Rf vacuum system. The results are summarized in this report.

08 HYDROGEN↗

Photo annealing effect on p-doped inverted organic solar cell

We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, which eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

SU-E-T-412: Evaluation of Tungsten-Based Functional Paper for Attenuation Device in Intraoperative Radiotherapy for Breast Cancer

Purpose: Intraoperative radiotherapy (IORT) with an electron beam is one of the accelerated partial breast irradiation methods that have recently been used in early-stage breast cancer. A protective acrylic resin-copper disk is inserted between the breast tissue and the pectoralis muscle to minimize the dose received by the posterior structures. However, a problem with this protective disk is that the surgical incision must be larger than the field size because the disk is manufactured from stiff and unyielding materials. The purpose of this study was to assess the applicability of a new tungsten-based functional paper (TFP) as an alternative to the existing protective disk in IORT. Methods: The newly introduced TFP (Toppan Printing Co., Ltd., Tokyo, JP) is anticipated to become a useful device that is lead-free, light, flexible, and easily processed. The radiation shielding performance of TFP was verified by experimental measurements and Monte Carlo (MC) simulations using PHITS code. The doses transmitted through the protective disk or TFP were measured on a Mobetron mobile accelerator. The same geometries were then reproduced, and the dose distributions were simulated by the MC method. Results: The percentages of transmitted dose relative to the absence of the existing protective disk were lower than 2% in both the measurements and MC simulations. In the experimental measurements, the percentages of transmitted dose for a 9 MeV electron beam were 48.1, 2.3, and 0.6% with TFP thicknesses of 1.9, 3.7, and 7.4 mm, respectively. The percentages for a 12 MeV were 76.0, 49.3, 20.0, and 5.5% with TFP thicknesses of 1.9, 3.7, 7.4, and 14.8 mm, respectively. The results of the MC simulation showed a slight dose increase at the incident surface of the TFP caused by backscattered radiation. Conclusion: The results indicate that a small-incision procedure may be possible by the use of TFP.

60 APPLIED LIFE SCIENCES↗

Investigation of parameters of interaction of hydrogen isotopes with liquid lithium and lithium capillary-porous system under reactor irradiation

In this study, the effect of reactor irradiation on the processes of interaction of hydrogen with liquid lithium and a lithium capillary-porous system (CPS) is considered. The experiments are carried out by the gas-absorption method with use of a specially designed ampoule device. The results of investigation of the interaction of hydrogen with liquid lithium and a lithium CPS under conditions of reactor irradiation are described; namely, these are the temperature dependences of the rate constant for the interaction of hydrogen with liquid lithium at different reactor powers, the activation energies of the processes, and the pre-exponential factor in the Arrhenius dependence. The effect of increasing absorption of hydrogen by the samples under investigation as a result of the reactor irradiation is fixed. The effect can be explained by increasing mobility of hydrogen in liquid lithium due to hot spots in lithium bulk and the interaction of helium and tritium ions (formed as a result of the nuclear reaction of {sup 6}Li with neutron) with a surface hydride film.

36 MATERIALS SCIENCE↗

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.

Liu, Yidong↗

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.

36 MATERIALS SCIENCE↗

Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

Solar cells utilizing multi-quantum well (MQW) structures are considered promising candidate materials for space applications. An open question is how well these structures can resist the impact of particle irradiation. The aim of this work is to provide feedback about the radiation response of In{sub 0.01}Ga{sub 0.99}As solar cells grown on Ge with MQWs incorporated within the i-region of the device. In particular, the local electronic transport properties of the MQW i-regions of solar cells subjected to electron and proton irradiation were evaluated experimentally using the electron beam induced current (EBIC) technique. The change in carrier collection distribution across the MQW i-region was analyzed using a 2D EBIC diffusion model in conjunction with numerical modeling of the electrical field distribution. Both experimental and simulated findings show carrier removal and type conversion from n- to p-type in MQW i-region at a displacement damage dose as low as ∼6.06–9.88 × 10{sup 9} MeV/g. This leads to a redistribution of the electric field and significant degradation in charge carrier collection.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

An ion mobility mass spectrometer for investigating photoisomerization and photodissociation of molecular ions

An ion mobility mass spectrometry apparatus for investigating the photoisomerization and photodissociation of electrosprayed molecular ions in the gas phase is described. The device consists of a drift tube mobility spectrometer, with access for a laser beam that intercepts the drifting ion packet either coaxially or transversely, followed by a quadrupole mass filter. An ion gate halfway along the drift region allows the instrument to be used as a tandem ion mobility spectrometer, enabling mobility selection of ions prior to irradiation, with the photoisomer ions being separated over the second half of the drift tube. The utility of the device is illustrated with photoisomerization and photodissociation action spectra of carbocyanine molecular cations. The mobility resolution of the device for singly charged ions is typically 80 and it has a mass range of 100-440 Da, with the lower limit determined by the drive frequency for the ion funnels, and the upper limit by the quadrupole mass filter.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

In situ calibration of the foil detector for an infrared imaging video bolometer using a carbon evaporation technique

The InfraRed imaging Video Bolometer (IRVB) is a useful diagnostic for the multi-dimensional measurement of plasma radiation profiles. For the application of IRVB measurement to the neutron environment in fusion plasma devices such as the Large Helical Device (LHD), in situ calibration of the thermal characteristics of the foil detector is required. Laser irradiation tests of sample foils show that the reproducibility and uniformity of the carbon coating for the foil were improved using a vacuum evaporation method. Also, the principle of the in situ calibration system was justified.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Transitioning from Cobalt-60 to X-Ray or E-Beam for Medical Sterilization: Filling Data and Education Gaps

The Office of Radiological Security (ORS) within the U.S. DOE’s National Nuclear Security Administration (NNSA) is charged to “work with government, law enforcement, and businesses across the globe to protect radioactive sources used for medical, research, and commercial purposes; remove and dispose of disused radioactive sources; and reduce the global reliance on high activity radioactive sources through the promotion of viable non-radioisotopic alternative technologies.” In this effort, the NNSA/ORS, along with the Office of Defense Nuclear Nonproliferation R&D, has been working with government and private entities that utilize gamma-ray irradiators in areas that include blood irradiation, radiotherapy, biology research, well logging, and radiation processing to consider alternative technologies that do not depend upon radioactive materials. In the medical device industry, nearly 50% of products are sterilized with ethylene oxide, 40.5% with cobalt-60 gamma-rays, 4.5% with electron-beam (e-beam), and <1% with X-ray.(1,2) The cobalt-60 irradiation facilities use an estimated 150 MCi of isotope to sterilize approximately 200 million cubic feet of product annually.(3) Due to growing safety regulations governing cobalt-60 use, continued advancements in e-beam and X-ray accelerator technology, and the greater irradiation durations and costs for cobalt-60 irradiation compared to e-beam and X-ray, switching to these non-radionuclide modalities is increasingly economically competitive. However, this breakdown of 40.5% cobalt-60 and 5.5% accelerator for product sterilization illustrates the difficulty that market forces and industry players have had in overcoming barriers in transitioning to non-nuclide alternatives. Besides those associated with construction of new e-beam and X-ray facilities, significant financial and regulatory obstacles are also associated with the irradiation and comprehensive testing of product constituent polymers and elastomers. The standards associated with product material performance testing are the Association for the Advancement of Medical Instrumentation (AAMI) Technical Information Report 17 (TIR 17), and its referenced American Society for Testing and Materials (ASTM) polymer testing standards. In the study now underway, and the subject of this article, the NNSA/ORS provided R&D funding to the Pacific Northwest National Laboratory (PNNL) in partnership with university researchers, leading medical product manufacturers, accelerator manufacturers, and contract sterilizers. The resulting Team Nablo (in memory of Sam Nablo) includes individuals representing PNNL, Becton Dickinson (BD), Johnson & Johnson, Stryker, Texas A&M University (TAMU), Steri-Tek, Mevex, Ion Beam Applications (IBA), and Sterigenics. The goals of this study are to 1) Identify specific polymer and/or elastomer-based medical products that are currently sterilized with gamma-rays, and for which there are data gaps and would be of greatest industry impact, 2) Work with relevant ASTM subcommittees for guidance and for potential standard revision, 3) Work with an appropriate Food & Drug Administration (FDA) office for potential collaboration on a guidance document for device manufacturers, 4) Measure the physical effects that product materials exhibit when they are given sterilization-level radiation doses from cobalt-60, e-beam or X-ray, and determine whether these effects would preclude the use of e-beam or X-ray for sterilization, 5) Communicate the resulting scientific datasets and findings via industry conferences, peer-reviewed journals, and relevant trade magazines, and 6) Post the resulting datasets on a publicly accessible website, which can be built on in future years. The end objective is to identify technical barriers preventing the adoption of X-ray and e-beam technologies, and share the results to encourage X-ray and e-beam adoption where feasible.

sterilization, alternate technologies, gamma, X-ra↗

SU-E-T-376: Evaluation of a New Stereotactic Diode for Small Field Dosimetry

Purpose: To evaluate the performance of a new stereotactic diode for dosimetry of small photon fields. Methods: A new stereotactic diode, consisting of an unshielded p-type silicon chip, and with improved radiation hardness energy dependence was recently developed (IBA Dosimetry, Schwarzenbruch, Germany). The diode has an active volume of 0.6 mm dia. x 0.02 mm thick. Two new diodes were evaluated, one which was pre-irradiated to 100kGy with 10 MeV electrons and another which received no prior irradiation. Sensitivity, stability, reproducibility, and linearity as a function of dose were assessed. Beam profiles and small field output factors were measured on a CyberKnife (CK) and compared with measurements using two commercially available diodes. Results: The new diodes exhibit linear behavior (within 0.6%) over a dose range 0.02 – 50 Gy; a commercially available device exhibits excursions of up to 4% over the same range. The sensitivity is 4.1 and 3.8 nC/Gy for the un-irradiated and pre-irradiated diodes, respectively. When irradiated with 150 Gy in dose increments of 5, 20 and 35 Gy, both new diodes provide a stable response within 0.5%. Output factors measured with the two new diodes are identical and compare favorably with other commercially available diodes and published data. Similarly, no differences in measured field size or penumbra were observed among the devices tested. Conclusion: The new diodes show excellent stability and sensitivity. The beam characterization in terms of output factors and beam profiles is consistent with that obtained with commercially available diodes.

60 APPLIED LIFE SCIENCES↗

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗