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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
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NASA NTRS1993

Microwave characterization of slotline on high resistivity silicon for antenna feed network

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Simons, Rainee N.↗
NASA NTRS1992

A study of subterahertz HEMT monolithic oscillators

A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (f(sub max)) of 310 GHz using offset self-aligned gamma-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with f(sub max) = 450 GHz, V(sub br) = 10 V and a gate width (W(sub g)) of 8 x 22.5 microns. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by f(sub max).

Kwon, Youngwoo↗
NASA NTRS1992

Progress on single barrier varactors for submillimeter wave power generation

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Nilsen, Svein M.↗
NASA NTRS1992

Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Raman, C.↗
NASA NTRS1991

New optical approaches to the quantitative characterization of crystal growth, segregation and defect formation

Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.

Carlson, D. J.↗
NASA NTRS1992

Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992

The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.

Fossum, Eric R.↗
NASA NTRS1993

Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

Jain, R. K.↗
NASA NTRS1994

Low-Reflectance Surfaces For Solar Cells

Improved method for increasing solar cell efficiency has potential application for space-based and terrestrial solar power systems and optoelectronic devices. Etched low-angle grooves help recover reflected light. Light reflected from v-grooved surface trapped in cover glass and adhesive by total internal reflection. Reflected light redirected onto surface, and greater fraction of incident light absorbed, producing more electrical energy in InP solar photovoltaic cell.

Bailey, Sheila G.↗
NASA NTRS1993

Approaches to solar cell design for pulsed laser power receivers

Using a laser to beam power from Earth to a photovoltaic receiver in space could be a technology with applications to many space missions. Extremely high average-power lasers would be required in a wavelength range of 700-1000 nm. However, high-power lasers inherently operate in a pulsed format. Existing solar cells are not well designed to respond to pulsed incident power. To better understand cell response to pulsed illumination at high intensity, the PC-1D finite-element computer model was used to analyze the response of solar cells to continuous and pulsed laser illumination. Over 50 percent efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modeled, and the effect of laser intensity, wavelength, and bias point was studied. Three main effects decrease the efficiency of a solar cell under pulsed laser illumination: series resistance, L-C 'ringing' with the output circuit, and current limiting due to the output inductance. The problems can be solved either by changing the pulse shape or designing a solar cell to accept the pulsed input. Cell design possibilities discussed are a high-efficiency, light-trapping silicon cell, and a monolithic, low-inductance GaAs cell.

Jain, Raj K.↗
NASA NTRS1993

NASDA activities in space solar power system research, development and applications

NASDA activities in solar cell research, development, and applications are described. First, current technologies for space solar cells such as Si, GaAs, and InP are reviewed. Second, future space solar cell technologies intended to be used on satellites of 21st century are discussed. Next, the flight data of solar cell monitor on ETS-V is shown. Finally, establishing the universal space solar cell calibration system is proposed.

Matsuda, Sumio↗
NASA NTRS1993

Characteristics of 0.8- and 0.2-microns gate length In(x)Ga(1-x) As/In(0.52)Al(0.48)As/InP (0.53 less than or equal to x less than or equal to 0.70) modulation-doped field-effect transistors at cryogenic temperatures

The performance characteristics of InP-based In(x)Ga(1-x)As/In(0.52)Al(0.48)As (0.53 is less than or equal to x is less than or equal to 0.70) pseudomorphic modulation-doped field-effect transistors (MODFET's) as a function of strain in the channel, gate, length, and temperature were investigated analytically and experimentally. The strain in the channel was varied by varying the In composition x. The temperature was varied in the range of 40-300 K and the devices have gate lengths L(sub g) of 0.8 and 0.2 microns. Analysis of the device was done using a one-dimensional self consistent solution of the Poisson and Schroedinger equations in the channel, a two-dimensional Poisson solver to obtain the channel electric field, and a Monte Carlo simulation to estimate the carrier transit times in the channel. An increase in the value of the cutoff frequency is predicted for an increase in In composition, a decrease in temperature, and a decrease in gate length. The improvements seen with decreasing temperature, decreasing gate length, and increased In composition were smaller than those predicted by analysis. The experimental results on pseudomorphic InGaAs/InAlAs MODFET's showed that there is a 15-30 percent improvement in cutoff frequency in both the 0.8- and 0.2-micron gate length devices when the temperature is lowered from 300 to 40 K.

Lai, Richard↗
NASA NTRS1992

Three-dimensional numerical modeling of indium phosphide Point-Contact Solar Cells

The Point-Contact Solar Cell (PCSC) geometry has proven very effective for silicon cells. To date, it has not been implemented in III-V materials. In addition, modeling such a geometry is very difficult because of its three-dimensional nature. We have developed a three-dimensional finite element modeling code (FIESTA ROC). In this paper, we present results from a three-dimensional modeling study of InP point-contact solar cells.

Clark, Ralph O.↗
NASA NTRS1992

Photovoltaic cells for laser power beaming

To better understand cell response to pulsed illumination at high intensity, the PC-1DC finite-element computer model was used to analyze the response of solar cells to pulsed laser illumination. Over 50% efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modelled, and the effect of laser intensity, wavelength, and bias point was studied. Designing a cell to accommodate pulsed input can be done either by accepting the pulsed output and designing a cell to minimize adverse effects due to series resistance and inductance, or to design a cell with a long enough minority carrier lifetime, so that the output of the cell will not follow the pulse shape. Two such design possibilities are a monolithic, low-inductance voltage-adding GaAs cell, or a high-efficiency, light-trapping silicon cell. The advantages of each design will be discussed.

Landis, Geoffrey A.↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1994

Modeling of high efficiency solar cells under laser pulse for power beaming applications

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Jain, Raj K.↗
NASA NTRS1994

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗
NASA NTRS1994

InGaAs PV device development for TPV power systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1995

Use of Advanced Solar Cells for Commercial Communication Satellites

The current generation of communications satellites are located primarily in geosynchronous Earth orbit (GEO). Over the next decade, however, a new generation of communications satellites will be built and launched, designed to provide a world-wide interconnection of portable telephones. For this mission, the satellites must be positioned in lower polar and near-polar orbits. To provide complete coverage, large numbers of satellites will be required. Because the required number of satellites decreases as the orbital altitude is increased, fewer satellites would be required if the orbit chosen were raised from low to intermediate orbit. However, in intermediate orbits, satellites encounter significant radiation due to trapped electrons and protons. Radiation tolerant solar cells may be necessary to make such satellites feasible. We analyze the amount of radiation encountered in low and intermediate polar orbits at altitudes of interest to next-generation communication satellites, calculate the expected degradation for silicon, GaAs, and InP solar cells, and show that the lifetimes can be significantly increased by use of advanced solar cells.

Bailey, Sheila G.↗