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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28

Magnetic self-mating fiber optic connector and fiber optic switch sensor

A system or method for a magnetic self-aligning coupling device for a fiber optic cable. The device includes a first end coupling comprising a first magnet and a second magnet. Both magnets include a mating surface and an annular ring defining an axial aperture. The aperture receives a distal end of a segment of fiber optic cable in a tight fit. The fiber optic cable has an exterior sleeve and a fiber core. The fiber core of the first segment and the second segment of the fiber optic cable are axially aligned by magnetic force in the first and second apertures to create a continuous fiber optic path. A method for detecting a security breach of a door using the self-aligning couplings is also described.

Neidigk, Stephen↗

Magnetic self-mating fiber optic connector and fiber optic switch sensor

A system or method for a magnetic self-aligning coupling device for a fiber optic cable. The device includes a first end coupling comprising a first magnet and a second magnet. Both magnets include a mating surface and an annular ring defining an axial aperture. The aperture receives a distal end of a segment of fiber optic cable in a tight fit. The fiber optic cable has an exterior sleeve and a fiber core. The fiber core of the first segment and the second segment of the fiber optic cable are axially aligned by magnetic force in the first and second apertures to create a continuous fiber optic path. A method for detecting a security breach of a door using the self-aligning couplings is also described.

Neidigk, Stephen↗

Demonstrating magnetic field robustness and reducing temporal T1 noise in transmon qubits through magnetic field engineering

The coherence of superconducting transmon qubits is often disrupted by fluctuations in the energy relaxation time (T1), limiting their performance for quantum computing. While background magnetic fields can be harmful to superconducting devices, we demonstrate that both trapped magnetic flux and externally applied static magnetic fields can suppress temporal fluctuations in T1 without significantly degrading its average value or qubit frequency. Using a three-axis Helmholtz coil system, we applied calibrated magnetic fields perpendicular to the qubit plane during cooldown and operation. Remarkably, transmon qubits based on tantalum-capped niobium (Nb/Ta) capacitive pads and aluminum-based Josephson junctions (JJs) maintained T1 lifetimes near 300 μs even when cooled in fields as high as 600 mG. Both trapped flux up to 600 mG and applied fields up to 400 mG reduced T1 fluctuations by more than a factor of two, while higher field strengths caused rapid coherence degradation. We attribute this stabilization to the polarization of paramagnetic impurities, the role of trapped flux as a sink for non-equilibrium quasiparticles (QPs), and partial saturation of fluctuating two-level systems (TLSs). These findings challenge the conventional view that magnetic fields are inherently detrimental and introduce a strategy for mitigating noise in superconducting qubits, offering a practical path toward more stable and scalable quantum systems.

Abdisatarov, Bektur [Fermilab; Jefferson Lab]↗

Multilayer thin film Hall effect device

A Hall effect device and a method of obtaining a magnetic field map of a magnetic body with the Hall effect device are presented. The device comprises: (1) a substrate, (2) a first layer having a first Hall coefficient deposited over the substrate, and (3) a second layer having a second Hall coefficient deposited over the first layer, the first and second layers cooperating to create, in the Hall effect device, a third Hall coefficient different from the first and second Hall coefficients. Creation of the third Hall coefficient by cooperation of the first and second layers allows use of materials for the first and second layers that were previously unavailable for Hall effect devices due to their relatively weak Hall coefficient.

Peters, Palmer N.↗

A high-frequency, low-power resonant radio-frequency neutron spin flipper for high-resolution spectroscopy

Here, we present a resonant-mode, transverse-field, radio-frequency (rf) neutron spin flipper design that uses high-temperature superconducting films to ensure sharp transitions between uniform magnetic field regions. Resonant mode allows for low-power, high-frequency operation but requires strict homogeneity of the magnetic fields inside the device. This design was found to efficiently flip neutrons at 96.6 ± 0.6% at an effective frequency of 4 MHz in bootstrap configuration with a beam size of 2.4 × 2.5 cm 2 and a wavelength of 0.4 nm. The high frequency and efficiency enable this device to perform high-resolution neutron spectroscopy with comparable performance with currently implemented rf flipper designs. The limitation of the maximum frequency was found due to the field homogeneity of the device. We numerically analyze the maximum possible efficiency of this design using a Bloch solver simulation with magnetic fields generated from finite-element simulations. We also discuss future improvements of the efficiency and frequency to the design based on the experimental and simulation results.

47 OTHER INSTRUMENTATION↗

Modeling the cooldown of cryocooler conduction-cooled devices

Cryocooler conduction cooled devices can experience significant cooldown time due to lower available cooling capacity compares to convection cooled devices. Therefore, the cooldown time is an important design parameter for conduction cooled devices. This article introduces a framework developed in Python for calculating the cooldown profiles and cooldown time of cryocooler conduction-cooled devices such as superconducting magnets and accelerator cavities. The cooldown time estimation problem is essentially a system of ordinary first-order differential equations comprising the material properties (temperature dependent thermal conductivity and specific heat capacity) of the components intertwined with the prevailing heat transfer channels (conduction, radiation, and heat flow across pressed contacts) and the cryocooler capacity. The formulation of this ODE system is first presented. This ODE system is then solved using the in-built Python library odeint. A case study is presented comprising a small cryocooler conduction-cooled copper stabilized niobium-titanium magnet. The case study is supplemented with the Python script enabling the reader to simply tweak the device design parameters and optimize the design from the point of view of slow/fast cooldown.

43 PARTICLE ACCELERATORS↗

Imaging Electrons in Two Dimensional Materials (Final report)

Two-dimensional (2D) materials have extraordinary characteristics that offer promising new approaches for science and technology. Electrons in graphene can move ballistically through a sheet, even though it is only a single atom thick. And transition metal dichalcogenide materials can be cleaved into 2D flakes of all types – metals, semiconductors, insulators, magnetic materials, and superconductors. To benefit from these discoveries, the science needs to be understood to transform 2D materials into useful new devices and systems. The evolution in time of atomic scale graphene structures has been studied in time with a transmission electron microscope (TEM), and ballistic transport of electrons in graphene was been imaged using a cooled scanning probe microscope (SPM), as well as electron motion in MoS 2 . Graphene is only one atom thick but is extremely strong, creating the opportunity to fabricate atomic scale structures in the lateral direction. Using an atomic resolution TEM, a suspended sheet of graphene can be shaped by a Si impurity atom on its surface that acts like a chisel to open up apertures, one atom at a time. The electrons in the TEM provide both the chiseling energy and the ability to image the results. Electrons and holes in graphene form a new type of electronic system with conical conduction and valence bands that meet at the Dirac point, with no energy gap. For moderate densities, the carriers form a Fermi liquid with ballistic transport over micron-scale distances. Using a cooled SPM the cyclotron orbit of electrons in graphene has been imaged. In the magnetic focusing regime, electrons leaving a point contact circle around and leave from a second point contact when the cyclotron diameter is equal to the contact spacing. The paths of electrons are focused - they enter at different angles but converge again at the exiting contact. When the SPM tip knocks an electron out of its orbit, an imaging signal is created. The ballistic motion of carriers in graphene opens the way for ballistic devices that manipulate beams of electrons and holes. Our collaborator Gil-Ho Lee, in Philip Kim's group, created a collimating contact by placing zig-zag absorbers on either side of entering electrons. Our cooled SPM was used to image the electron beam and determine its 9-degree halfwidth. By changing the gate voltage, a collimated beam of holes was also created, opening the way for colliding beam experiments. Coherent beams of carriers are desirable for quantum information processing. Via Andreev reflection, superconducting contacts can covert Cooper pairs in a superconductor to an ingoing and outgoing electrons and holes. Using our cooled SPM, Andreev reflection was imaged from a superconducting contact on a graphene device. Magnetic focusing was used to create an incoming beam of electrons and an outgoing beam of holes, detected by a third point contact. The images show a clear transition from normal reflection above the superconducting transition temperature to Andreev reflection as the device is cooled. Transition metal dichalcogenides offer a wide array of materials that can be exfoliated into ultrathin 2D sheets. A cooled SPM can be used to detect quantum dots as well as to image electron flow. The tip charge capacitively couples to electrons on the dot, acting as a gate to tune the dot conductance. Coulomb blockade peaks appear as a bullseye pattern in an SPM image as the tip is raster scanned above the dot. This approach was used to detect quantum dots in a MoS 2 channel as the carrier density was reduced and electrons pooled in low energy points. Through our DOE supported research, cooled SPM imaging has proven to be a very useful tool to uncover the motion of electrons and holes in the new quantum materials graphene and MoS 2 .

36 MATERIALS SCIENCE↗

Shape Anisotropy-Dependent Leaking in Magnetic Neurons for Bio-Mimetic Neuromorphic Computing

Spiking neural networks seek to emulate biological computation through interconnected artificial neuron and synapse devices. Spintronic neurons can leverage magnetization physics to mimic biological neuron functions, such as integration tied to magnetic domain wall (DW) propagation in a patterned nanotrack and firing tied to the resistance change of a magnetic tunnel junction (MTJ), captured in the domain wall-magnetic tunnel junction (DW-MTJ) device. Leaking, relaxation of a neuron when it is not under stimulation, is also predicted to be implemented based on DW drift as a DW relaxes to a low energy position, but it has not been well explored or demonstrated in device prototypes. Here, in this work, we study DW-MTJ artificial neurons capable of leaky integrate-and-fire (LIF) behavior and demonstrate geometry-dependent leaking dynamics that results in repeatable, tunable LIF operation. Studying the behavior of five different device designs, we show tuning the geometry, stimulating fields and currents, and location of electrical contacts results in a wide range of neuron behavior. Additionally, implementation of an asymmetric notch allows for nonlinear pinning which increased expressivity without sacrificing leaking. The measured behavior is implemented in a simulated spiking neural network that outperforms a 1D model of continuous DW motion and approaches the performance of an ideal LIF activation function. The results show that the analog LIF capability of DW-MTJ neurons combines many desirable neuron functions into a single device, which can result in varied forms of multifunctional neuromorphic computing.

42 ENGINEERING↗

Interplay between topological valley and quantum Hall edge transport

An established way of realising topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field, topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls potentially do not correspond to a topological domain wall in the order parameter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Systematic evaluation of magnetic sensitivities of anisotropic magnetoresistive sensors at liquid helium temperature for superconducting cavities

Trapped magnetic flux in bulk superconductors reduces the quality factor Q in superconducting radio-frequency (SRF) cavities. However, the mechanisms underlying flux trapping and radio-frequency loss are not well understood. Detailed observation of the magnetic distributions is important for understanding such phenomena. Magnetic field mapping is useful for observing the magnetic field distribution around SRF cavities. Measuring the change in the magnetic field around the cavity elucidates the flux trapping behavior. Anisotropic magnetoresistive (AMR) sensors are inexpensive and small devices that can detect magnetic flux density. The magnetic sensitivities of AMR sensors need to be evaluated at liquid helium temperature for the magnetic field mapping of SRF cavities. In this study, a test stand was constructed to calibrate the magnetic sensitivities of AMR sensors in liquid helium, and 110 AMR sensors were tested using this stand. The magnetic sensitivities were evaluated systematically. A solenoid coil was used to control the uniform external magnetic field and to measure the magnetic sensitivity at low temperatures. All AMR sensors exhibited suitable sensitivities to the magnetic field around the SRF cavity. The variation in these sensitivities in all AMR sensors was ~1%. Further, the AMR sensors were found to have sufficient sensitivity for mapping the magnetic field around the exterior surface of the SRF cavity.

43 PARTICLE ACCELERATORS↗

Low-Temperature Electronic Components Being Developed

In many future NASA missions, such as deep space planetary exploration and the Next Generation Space Telescope, electrical components and systems must operate reliably and efficiently in extremely low temperature environments. Most modern electronic components cannot operate below moderately low operating temperatures (-40 to -55 C). The low-temperature electronics program at the NASA Lewis Research Center is focusing on the development and characterization of low-temperature components and the integration of the developed devices into demonstrable very low-temperature (-200 C) power systems such as dc-dc converters. Such low-temperature electronics will not only tolerate hostile environments but also will reduce system size and weight by eliminating radioisotope heating units, thereby reducing launch cost, improving reliability and lifetime, and increasing energy densities. Low-temperature electronic components will also have a great influence on terrestrial applications such as medical instrumentation, magnetic levitation transportation systems, and arctic and antarctic exploration. Lewis researchers are now performing extensive evaluations of commercially available as well as custom-made devices. These include various types of energy storage and signal capacitors, power switching devices, magnetic and superconducting materials, and primary lithium batteries, to name a few.

Patterson, Richard L.↗

Superconducting (Ba,K)Fe 2 As 2 epitaxial films on single and bicrystal SrTiO 3 substrates

The realization of single crystal and bicrystal films of superconducting materials is of great interest because they allow the investigation of the intragrain performance as well as the understanding of potential limitations in the grain boundary transparency. For many years, the realization of a high-quality (Ba,K)Fe 2 As 2 film has been challenging. Here, the realization of (Ba,K)Fe 2 As 2 epitaxial thin films on single crystal SrTiO 3 (001) and [001]-tilt-type SrTiO 3 bicrystal substrates with high superconducting properties is demonstrated. The epitaxial growth of (Ba,K)Fe 2 As 2 was enabled by implementing an undoped BaFe 2 As 2 buffer layer between the SrTiO 3 substrate and (Ba,K)Fe 2 As 2 film. The film exhibits a high T c of 38.0 K and an extremely high J c of 14.3 MA/cm 2 at 4.2 K. Artificial grain boundaries of (Ba,K)Fe 2 As 2 were also successfully achieved on bicrystals with misorientation angles up to 36.8° by the same preparation methods. The artificial grain boundaries exhibited an identical T c of 38.0 K and an excellent transfer of the grain orientation from the bicrystal substrates with high crystallinity comparable to that of the high-quality Ba(Fe,Co) 2 As 2 films. Furthermore, this enables the investigation of the intrinsic (Ba,K)Fe 2 As 2 grain boundary nature, which will clarify its potential for superconducting applications, like Josephson junctions, wires, and magnets.

(Ba,K)Fe2As2↗

Topological insulator-based high efficiency switching of magnetic unit, method and applications

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

36 MATERIALS SCIENCE↗

Interface-driven magnetic anisotropy in relaxed La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 heterostructures on MgO

We investigate the structural and magnetic properties of La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 (LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2–3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and high-resolution synchrotron x-ray reciprocal space mapping. Furthermore, we find that the presence of the LSCO spacer and capping layers leads to ferromagnetism in ultra-thin LSMO layers with thicknesses of the order of 2 uc with the magnetic easy axis oriented in the film plane. Net magnetic moments of 1.4 and 2.4 μ B /Mn are measured for (2 uc LSCO/2 uc LSMO) and (2 uc LSCO/4 uc LSMO) superlattices, respectively, by superconducting quantum interference device magnetometry. The effective magnetic anisotropy of the relaxed (2 uc LSCO/4 uc LSMO) heterostructure is found to be an order of magnitude higher than bulk LSMO highlighting the critical role of interfacial interactions in tuning magnetic anisotropy at complex oxide interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Field-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition

Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature. This scheme combines the benefits of high-density storage in the OOP states at room temperature and the efficient field-free SOT switching in the IP states at elevated temperatures. While conventional switching of OOP bits faces the dilemma that high OOP anisotropy is required to improve bit stability and low OOP anisotropy is required to lower switching current density, this scheme disentangles this interdependence, allowing for low switching currents to be possible without sacrificing the bit stability, offering opportunities for future memory devices.

Science & Technology - Other Topics↗

Real-space observation of fluctuating antiferromagnetic domains

Magnetic domains play a fundamental role in physics of magnetism and its technological applications. Dynamics of antiferromagnetic domains is poorly understood, although antiferromagnets are expected to be extensively used in future electronic devices wherein it determines the stability and operational speed. Dynamics of antiferromagnets also features prominently in the studies of topological quantum matter. Real-space imaging of fluctuating antiferromagnetic domains is therefore highly desired but has never been demonstrated. We use coherent x-ray diffraction to obtain videos of fluctuating micrometer-scale antiferromagnetic domains in Ni 2 MnTeO 6 on time scales from 10 -1 to 10 3 s. In the collinear phase, thermally activated domain wall motion is observed in the vicinity of the Néel temperature. Unexpectedly, the fluctuations persist through the full range of the higher-temperature helical phase. These observations illustrate the high potential significance of the dynamic domain imaging in phase transition studies and in magnetic device research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗

Performance Improvements of Poincaré Analysis for Exascale Fusion Simulations

Understanding the time-varying magnetic field in a fusion device is critical for the successful design and construction of clean-burning fusion power plants. Poincaré analysis provides a powerful method for the visualization of magnetic fields in fusion devices. However, Poincaré plots can be very computationally expensive making it impractical, for example, to generate these plots in situ during a simulation. In this short paper, we describe a collaboration among computer science and physics researchers to develop a new Poincaré tool that provides a significant reduction in the time to generate analysis results.

Pugmire, Dave↗