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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1986

Efficient Power Amplifier for Motor Control

Pulse-width-modulated amplifier supplies high current as efficiently as low current needed for starting and running motor. Key to efficiency of motor-control amplifier is V-channel metal-oxide/semiconductor transistor Q1. Device has low saturation resistance. However, has large gate input capacitance and small margin between its turn-on voltage and maximum allowable gate-to-source voltage. Circuits for output stages overcome limitations of VMOS device.

Brown, R. J.↗

NASA NTRS1986

Plasma-Sprayed Coatings on Porous Surfaces

Need for combining benefits of duplex thermal-barrier coatings with film cooling on gas-turbine vanes and blades stimulated development of improved method for plasma spraying these coatings. Method reduces blocking of holes by plasma-sprayed material and at same time reduces base-metal oxidation during coating operation. Features provide potential for increased engine efficiency and power, reduced fuel consumption, use of less costly materials or construction procedures, and extended life and durability.

Leibert, C. H.↗

NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗

NASA NTRS1985

Characterization of lubricated bearing surfaces operated under high loads

The composition and surface profiles of M-50 steel surfaces were measured after operation at high loads in a bearing contact simulator. An ester lubricant (trimethyolpropane triheptanoate) was used with and without various additives. Optical profiles were obtained + or - to 30 depth resolution with a phase-locked interference microscope in 10 micron diameter areas within and outside the wear tracks. Optical constants and surface film thickness were measured in the same areas with an electronic scanning ellipsometer. Film composition was measured with a scanning Auger electron spectrometer. It is concluded that metal oxide formation is accelerated within the wear tracks.

Lauer, J. L.↗

NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗

NASA NTRS1984

An X-ray diffraction study of titanium oxidation

Titanium specimens of commercial purity were exposed at 1100 to 1400 F to laboratory air for times up to 100 hours. The extent of substrate contamination by interstitial oxygen was was determined by a new X-ray diffraction analysis involving transformation of X-ray diffraction intensity bands. The oxygen solid-solubility at the oxide-metal interfaces and its variation with time at temperature were also determined. Diffusion coefficients are deduced from the oxygen depth profiles.

Wiedemann, K. E.↗

NASA NTRS1984

MOSFET and MOS capacitor responses to ionizing radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Benedetto, J. M.↗

NASA NTRS1985

Application of shock wave data to earth and planetary science

It is pointed out that shock wave data for: (1) low temperature condensable gases H2 and He, (2) H2O, CH4, NH3, CO, CO2, and N2 ices, and (3) silicates, metals, oxides and sulfides have many applications in geophysics and planetary science. The present paper is concerned with such applications. The composition of planetary interiors is discussed, taking into account the division of the major constituent of the planets in three groups on the basis of 'cosmic abundance' arguments, the H-He mixtures in the case of Jupiter and Saturn, shock wave data for hydrogen, and constraints on the internal structure of Uranus and Neptune. Attention is also given to the earth's mantle, shock wave data for mantle materials, the earth's core, impacts on planetary surfaces, elastic wave velocities as a function of pressure along the Hugoniot of iron, and reactions which yield the CO2 bearing atmospheres for Venus, earth, and Mars.

Ahrens, T. J.↗

NASA NTRS1986

Submicron Silicon MOSFET

Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

Daud, T.↗

NASA NTRS1986

Coating Circuit Boards With Silicone

Techniques appropriate to boards containing CMOS circuits detailed. Document presents procedure for applying thin conformal coating to such electronic assemblies as printed-circuit boards and wire-wrapped boards. Coating is from 1 to 7 mils (25 to 178 micrometers) thick and composed of room-temperature-vulcanizing (RTV) silicone. Specifies materials, equipment, spraying method, and quality requirements. Takes into account special needs of circuits made with complementary metal-oxide/semiconductor (CMOS) devices on circuit boards. Special attention given to preventing damage by electrostatic discharge, to which CMOS circuits especially sensitive.

Gaudiano, S.↗

NASA NTRS1985

An experimental data base for material selection and design of high-speed, high-pressure, oxygen turbomachinery

New technologies for space-based, reusable, throttleable, cryogenic, orbit transfer propulsion are being evaluated. A variable-thrust (200 to 3000 lbF), 2000 psi chamber pressure, LO2/LH2 engine has been selected to demonstrate the 20-hour, 500-restart life goal, and a specific impulse of 480 lbF-sec/lbM. The advanced design uses warm oxygen to power a fully integrated turbopump that delivers 4500 psi LO2. The selected engine cycle provides the following advantages over conventional expander cycle designs which use H2 to drive the LH2 and LO2 pumps; higher engine operating pressures and performance in a smaller envelope, lower turbine operating temperatures, elimination of interpropellant seals and purges, and an extended throttling range. The design approach and results of testing to characterize materials for use in high-pressure gaseous oxygen are discussed. Test methods include particle impact testing in a sonic-flow, hot GO2 streams and forced, high-speed friction rubbing testing. Materials are exposed to oxygen and nitrogen atmospheres at pressures of 100, 1000, and 3000 psi to identify separately the gas cooling effects from the metal oxidation effects at the rubbing surface. The selection of candidate design materials is based on an analytical parameter defined as the burn factor. Typical materials tested include carbon steel, stainless steel, nickel, copper, and monel alloys.

Schoenman, L.↗

NASA NTRS1986

Overcash, D. R.

The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.

Source record↗

NASA NTRS1986

Tribolgy of selected ceramics at temperatures to 900 deg C

Results of fundamental and focused research on the tribological properties of ceramics are discussed. The basic friction and wear characteristics are given for ceramics of interest for use in gas trubine, adiabatic diesel, and Stirling engine applications. The importance of metal oxides in ceramic/metal sliding combinations is illustrated. The formulation and tribological additives are described. Friction and wear date are given for carbide and oxide-based composite coatings for temperatures to at least 900 C.

Sliney, H. E.↗

NASA NTRS1985

JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

Buehler, M. G.↗

NASA NTRS1986

Capacitor-type micrometeoroid detectors

The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

Wortman, J. J.↗

NASA NTRS1985

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Jones, B.↗

NASA NTRS1985

A cryogenically cooled, multidetector spectrometer for infrared astronomy

A liquid helium-cooled, 24 detector grating spectrometer was developed and used for low resolution astronomical observations in the 5 to 14 micron spectral range. The instrument operated on the 91 cm Kuiper Airborne Observatory, the 3 m IRTF (Mauna Kea), the 3 m Shane telescope (Lick Observatory), and the 152 cm NASA and University of Arizona telescope. The detectors are discrete Si:Bi photoconductors with individual metal oxide semiconductor field effect transistor preamplifiers operating at 4 K. The system uses a liquid helium-cooled slit, order-sorter filter, collimator mirror, grating, and camera mirror arranged in a Czerny-Turner configuration with a cold stop added between the collimator mirror and the grating. The distances between components are chosen so that the collimator mirror images the secondary mirror of the telescope onto the cold stop, thus providing a very effective baffle. Scattered radiation is effectively reduced by using liquid helium-cooled, black baffles to divide the spectrometer into three separate compartments. The system noise-equivalent flux density, when used on the 152 cm telescope from 8 to 13 microns with a resolving power of 50, is 4.4 x 10 to the minus 17th power W/sq cm micron square root of Hz. The main applications are for measuring continuum radiation levels and solid state emission and absorption features in regions of star and planet formation.

Witteborn, F. C.↗

NASA NTRS1986

The effect of processing conditions on the GaAs/plasma-grown insulator interface

The effect of processing conditions on the interface state density was evaluated from C-V measurements on metal-oxide-semiconductor capacitors. The optimum processing conditions for the minimum surface state density was found to be related to the postoxidation annealing temperature and time, and was independent of chemical treatments prior to oxidation. Annealing at the optimum condition (i.e., at 350 C for 1 h in either nitrogen or hydrogen gas, with or without an aluminum pattern on the oxide) reduces the fast surface state density by about one order of magnitude. By using a nitrogen/oxygen plasma, the static dielectric constant of the oxide decreased as the N/O ratio was increased, and nitrogen was incorporated into the oxide. In addition, the fast surface state density was reduced as a result of this nitridation process.

Hshieh, F. I.↗