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NASA NTRS1985

High-voltage solar-cell chip

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Kapoor, V. J.↗

NASA NTRS1985

The science of computing - Parallel computation

Although parallel computation architectures have been known for computers since the 1920s, it was only in the 1970s that microelectronic components technologies advanced to the point where it became feasible to incorporate multiple processors in one machine. Concommitantly, the development of algorithms for parallel processing also lagged due to hardware limitations. The speed of computing with solid-state chips is limited by gate switching delays. The physical limit implies that a 1 Gflop operational speed is the maximum for sequential processors. A computer recently introduced features a 'hypercube' architecture with 128 processors connected in networks at 5, 6 or 7 points per grid, depending on the design choice. Its computing speed rivals that of supercomputers, but at a fraction of the cost. The added speed with less hardware is due to parallel processing, which utilizes algorithms representing different parts of an equation that can be broken into simpler statements and processed simultaneously. Present, highly developed computer languages like FORTRAN, PASCAL, COBOL, etc., rely on sequential instructions. Thus, increased emphasis will now be directed at parallel processing algorithms to exploit the new architectures.

Denning, P. J.↗

NASA NTRS1986

Crack Growth in Single-Crystal Silicon

Report describes experiments on crack growth in single-crystal silicon at room temperature in air. Crack growth in (111) cleavage plane of wafers, 50 by 100 by 0.76 mm in dimension, cut from Czochralski singlecrystal silicon studied by double-torsion load-relaxation method and by acoustic-emission measurements. Scanning electron microscopy and X-ray topography also employed. Results aid in design and fabrication of silicon photovoltaic and microelectronic devices.

Chen, C. P.↗

NASA NTRS1986

Thermally-Activated Metal-to-Glass Bonding

Hermetic seals formed easily by use of metallo-organic film. Metallo-organic film thermally bonded to glass and soldered or welded to form hermetic seal. Film applied as ink consisting of silver neodecanoate in xylene. Relative amounts of ingredients selected to obtain desired viscosity. Material applied by printing or even by scribing with pen. Sealing technique useful in making solar-cell modules, microelectronic packages, and other hermetic silicon devices.

Gallagher, B. D.↗

NASA NTRS1986

Depositing Diamondlike Carbon Films

New process demonstrated to make thin films (usually thousands of angstroms to few microns thick) that have properties of diamonds. Various plasma and ion-beam techniques employed to generate films. Films made by radio-frequency plasma decomposition of hydrocarbon gas or other alkanes, by low-energy carbon-ion-beam deposition, or by ion plating and dual ion technique using carbon target. Advantages of new process over others are films produced, though amorphous, are clear, extremely hard, chemically inert, of high resistivity, and have index of refraction of 3.2 properties similar to those of single-crystal diamonds. Films have possible uses in microelectronic applications, high-energy-laser and plastic windows, corrosion protection for metals, and other applications where desired properties of film shaped during the film-formation process.

Mirtich, M. J.↗

NASA NTRS1986

Sulfone/Ester Polymers Containing Pendent Ethynyl Groups

Two processes make high-performance polymers resistant to solvents, without compromising mechanical characteristics. Polymers show improved solvent resistance while retaining high toughness, thermoformability, and mechanical performance. Multistep process involves conversion of pendent bromo group to ethynyl group, while direct process involves reacting hydroxy-terminated sulfone oligomers or polymers with stoichiometric amount of 5-(4-ethynylphenoxy) isophthaloyl chloride. Applications for new polymers include adhesives, composite resin matrices, moldings, ultrafiltration membranes, protective coatings, and such electrical insulators as thin films for microelectronic circuitry.

Hergenrother, P. M.↗

NASA NTRS1984

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

Source record↗

NASA NTRS1985

Accelerators for critical experiments involving single-particle upset in solid-state microcircuits

Charged-particle interactions in microelectronic circuit chips (integrated circuits) present a particularly insidious problem for solid-state electronic systems due to the generation of soft errors or single-particle event upset (SEU) by either cosmic rays or other radiation sources. Particle accelerators are used to provide both light and heavy ions in order to assess the propensity of integrated circuit chips for SEU. Critical aspects of this assessment involve the ability to analytically model SEU for the prediction of error rates in known radiation environments. In order to accurately model SEU, the measurement and prediction of energy deposition in the form of an electron-hole plasma generated along an ion track is of paramount importance. This requires the use of accelerators which allow for ease in both energy control (change of energy) and change of ion species. This and other aspects of ion-beam control and diagnostics (e.g., uniformity and flux) are of critical concern for the experimental verification of theoretical SEU models.

Zoutendyk, J. A.↗

NASA NTRS1986

Space Station technology experiments and uses

The use of the proposed Space Station for technological experimentation is discussed. The general objectives and capabilities of the Station and the status of planning are reviewed; the external and internal environmental conditions at the 500-km 28.5-deg-inclination Station orbit are described; and six conceptual Technology Development Missions designed by NASA and included in the Mission Requirements Data Base are briefly characterized and illustrated with drawings. The missions considered concern spacecraft-materials performance, solar dynamic power, data transfer and processing microelectronics, long-term cryogenic-fluid storage, active-optics technology, and cryogenic-propellant transfer, storage, and reliquefaction.

Breckenridge, R. A.↗

NASA NTRS1986

Diamondlike carbon films on semiconductors for insulated-gate technology

MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.

Kapoor, V. J.↗

NASA NTRS1986

Space Station and technology experiments

The space technology experiments to be performed on the Space Station are discussed. The characteristics of the dual keel Station, which contains modules for habitation, logistics, and laboratories, applicable to technology experiments are described. Experiments utilizing the initial Space Station design include: (1) assessing the instrumented Space Station, (2) the testing of spacecraft materials and coatings, and (3) a microelectronics data system experiment; the objectives and procedures for these studies are examined. With increases in the number of modules, and electrical power and OTV capabilities, the evaluation of teleoperated techniques, the development and testing of a diversified antenna near- and far-field measurement facility, the study of cryogenic propellant transfer, and storage, and the implementation of a large concentrator in space are possible; descriptions of these proposed experiments are provided.

Breckenridge, R. A.↗

NASA NTRS1987

Microscopic Gas-Flow Controller

Proposed flow-controlling and -measuring device made by batch solid-state microelectronic-fabrication techniques. Device contains ultrasensitive silicon capacitive pressure transducer, gas-flow channels etched in silicon wafer, and integrated microvalves. Used to control and monitor low gas flows at low pressures.

Wise, Kensall D.↗

NASA NTRS1986

Atmospheric electrical modeling in support of the NASA F106 Storm Hazards Project

With the use of composite (non-metallic) and microelectronics becoming more prevalent in the construction of both military and commercial aircraft, the control systems have become more susceptible to damage or failure from electromagnetic transients. One source of such transients is the lightning discharge. In order to study the effects of the lightning discharge on the vital components of an aircraft, NASA Langley Research Center has undertaken a Storm Hazards Program in which a specially instrumented F106B jet aircraft is flown into active thunderstorms with the intention of being struck by lightning. One of the specific purposes of the program is to quantify the environmental conditions which are conductive to aircraft lightning strikes.

Helsdon, J. H.↗

NASA NTRS1986

Physics through the 1990s: Scientific interfaces and technological applications

The volume examines the scientific interfaces and technological applications of physics. Twelve areas are dealt with: biological physics-biophysics, the brain, and theoretical biology; the physics-chemistry interface-instrumentation, surfaces, neutron and synchrotron radiation, polymers, organic electronic materials; materials science; geophysics-tectonics, the atmosphere and oceans, planets, drilling and seismic exploration, and remote sensing; computational physics-complex systems and applications in basic research; mathematics-field theory and chaos; microelectronics-integrated circuits, miniaturization, future trends; optical information technologies-fiber optics and photonics; instrumentation; physics applications to energy needs and the environment; national security-devices, weapons, and arms control; medical physics-radiology, ultrasonics, MNR, and photonics. An executive summary and many chapters contain recommendations regarding funding, education, industry participation, small-group university research and large facility programs, government agency programs, and computer database needs.

Source record↗

NASA NTRS1988

Fluidized-Bed Deposition Of Single-Crystal Silicon

Uniformly thin single-crystal films of silicon produced by modification of fluidized-bed-reactor technique producing polysilicon by chemical vapor deposition. Proposed for silicon wafers for flat-plate solar arrays and results in different structural and electronic properties in deposition layer desirable for specific microelectronic or solar-cell processing. In process deposition occurs on silicon wafers, kept individually at temperatures above 1,000 degree C. Heated wafers held in unheated and minimally-agitated-fluidized bed of silicon particles and in low concentration of silane.

Hsu, George C.↗

NASA NTRS1988

Interfacial adhesion: Theory and experiment

Adhesion, the binding of different materials at an interface, is of general interest to many branches of technology, e.g., microelectronics, tribology, manufacturing, construction, etc. However, there is a lack of fundamental understanding of such diverse interfaces. In addition, experimental techniques generally have practical objectives, such as the achievement of sufficient strength to sustain mechanical or thermal effects and/or have the proper electronic properties. In addition, the theoretical description of binding at interfaces is quite limited, and a proper data base for such theoretical analysis does not exist. This presentation will review both experimental and theoretical aspects of adhesion in nonpolymer materials. The objective will be to delineate the critical parameters needed, governing adhesion testing along with an outline of testing objectives. A distinction will be made between practical and fundamental objectives. Examples are given where interfacial bonding may govern experimental consideration. The present status of theory is presented along wiith recommendations for future progress and needs.

Ferrante, John↗

NASA NTRS1988

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

Kurdi, B. N.↗

NASA NTRS1988

Microwave and millimeter-wave resonant-tunneling devices

Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.

Sollner, T. C. L. Gerhard↗