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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Development of an expert system for power quality advisement using CLIPS 6.0

Proliferation of power electronic devices has brought in its wake both deterioration in and demand for quality power supply from the utilities. The power quality problems become apparent when the user's equipment or systems maloperate or fail. Since power quality concerns arise from a wide variety of sources and the problem fixes are better achieved from the expertise of field engineers, development of an expert system for power quality advisement seems to be a very attractive and cost-effective solution for utility applications. An expert system thus developed gives an understanding of the adverse effects of power quality related problems on the system and could help in finding remedial solutions. The paper reports the design of a power quality advisement expert system being developed using CLIPS 6.0. A brief outline of the power quality concerns is first presented. A description of the knowledge base is next given and details of actual implementation include screen output from the program.

Chandrasekaran, A.↗
DOE OSTI2026

Reliable Power for Remote Applications

Optical power beaming - using lasers to transmit energy across distances - could change how remote devices receive power. The National Laboratory of the Rockies (NLR) seeks partners to explore the next stage in long-distance power beaming for terrestrial and space-based applications.

14 SOLAR ENERGY↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: The Effect of Load Conditions on Destructive SEE

Recent testing of Enhanced Power Conversion (EPC) eGaN FET devices design for power use has shown that the devices are susceptible to Single-Event Effects (SEE) that degrade or destroy the device. The exact mechanism of the SEE is not known. The testing so far has been in the static condition, in the fully off condition, and with minimal load conditions. These conditions may not be worst case. This report presents the results of a study that tests some of the load conditions for SEE. The EPC2012 and EPC1012 were chosen for the test. The tests were performed the TAMU radiation effects facility in May and June of 2013.

Scheick, Leif↗
NASA NTRS1983

Free-piston stirling engine endurance test program

The Free-Piston Stirling Engine (FPSE) has the potential to be a long-lived, highly reliable, power conversion device attractive for many product applications such as space, residential, or remote-site power. The purpose of endurance testing the FPSE is to demonstrate its potential for long life. The endurance program was directed at obtaining 1000 operational hours under various test conditions: low power, full stroke, duty cycle, and stop/start. Critical performance parameters were measured to note any change and/or trend. Inspections were conducted to measure and compare critical seal/bearing clearance. The engine performed well throughout the program, completing the 1000 hours. Hardware inspection, including the critical clearances, showed no significant change in hardware or clearance dimensions. The performance parameters did not exhibit any increasing or decreasing trends. The test program confirms the potential for long-life FPSE applications. Additional testing is planned to increase the test hours to 10,000.

Dochat, G.↗
NASA NTRS1989

History and status of beamed power technology and applications at 2.45 Gigahertz

Various applications of beamed power technology are discussed. An experimental microwave powered helicopter, rectenna technology, the use of the Solar Power Satellite to beam energy to Earth via microwaves, the use of cyclotron resonance devices, microwave powered airships, and electric propulsion are discussed.

Brown, William C.↗
NASA NTRS2003

NASA Tech Briefs, August 2003

Topics covered include: Stable, Thermally Conductive Fillers for Bolted Joints; Connecting to Thermocouples with Fewer Lead Wires; Zipper Connectors for Flexible Electronic Circuits; Safety Interlock for Angularly Misdirected Power Tool; Modular, Parallel Pulse-Shaping Filter Architectures; High-Fidelity Piezoelectric Audio Device; Photovoltaic Power Station with Ultracapacitors for Storage; Time Analyzer for Time Synchronization and Monitor of the Deep Space Network; Program for Computing Albedo; Integrated Software for Analyzing Designs of Launch Vehicles; Abstract-Reasoning Software for Coordinating Multiple Agents; Software Searches for Better Spacecraft-Navigation Models; Software for Partly Automated Recognition of Targets; Antistatic Polycarbonate/Copper Oxide Composite; Better VPS Fabrication of Crucibles and Furnace Cartridges; Burn-Resistant, Strong Metal-Matrix Composites; Self-Deployable Spring-Strip Booms; Explosion Welding for Hermetic Containerization; Improved Process for Fabricating Carbon Nanotube Probes; Automated Serial Sectioning for 3D Reconstruction; and Parallel Subconvolution Filtering Architectures.

Source record↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

InP- and GaAs-Based 0.6 eV GaInAs Devices for Thermophotovoltaics and Laser Power Conversion

Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.

ENGINEERING,MATERIALS SCIENCE,SOLAR ENERGY↗
DOE OSTI2020

Growth and characterization of homoepitaxial β-Ga 2 O 3 layers

ß-Ga 2 O 3 is a next-generation ultra-wide bandgap semiconductor (E g = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial ß-Ga 2 O 3 layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of ~1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by J-V and C-V measurements, revealing an unintentional doping density of 4.3×10 16 cm -3 - 2×10 17 cm -3 in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the ß-Ga 2 O 3 homoepitaxial layers used in power electronic and other devices.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Office Building Plug Load Disaggregation

This case study focuses on the National Renewable Energy Lab's succesful effort to develop a disaggregated breakdown of device-level power consumption in a zero energy office building by combining smart plug metering with a device inventory.

plug and process loads, PPLs, device-level meterin↗
NASA NTRS1988

Characterization of a 30-GHz IMPATT solid state amplifier

Described are the characterization and testing of a 20 W solid state amplifier operating in the Ka band to be used in low cost experimental ground terminals. The amplifier was developed by the TRW Electronic Systems Group under NASA Contract NAS3-23266 as a proof-of-concept (POC) device in support of the Advanced Communications Technology Satellite (ACTS) program. Additional goals were development of high-power IMPATT devices and circulators, and multistage diode circuits, which are an integral part of the amplifier. The amplifier underwent acceptance testing at the NASA Lewis Research Center, Cleveland, Ohio. Characteristics measured include the output power of 42 dB m, gain of 30 dB, an injection-locking RF bandwidth of 260 MHz, and an overall direct current-to-radiofrequency (dc-to-RF) efficiency of 6.7 percent.

Wald, Lawrence W.↗
NASA NTRS1982

Electronic Nose

Grace Industries, Inc.'s Electronic Nose is a vapor and gas detector, deriving from NASA's electronic circuitry, capable for sensing the presence of accelerants several days after a fire. The device is powered by rechargeable battery and no special training needed to operate. If an accelerant is present, device will emit a beeping sound and trigger a flashing light; the faster the beep rate, the more volatile the accelerant. Its sensitivity can also detect minute traces of accelerants. Unit saves investigators of fire causes time and expense by providing speedy detection of physical evidence for use in court. Device is also useful for detecting hazardous fumes, locating and detecting gas leaks in refineries and on oil drilling rigs.

Source record↗
NASA NTRS2008

1KW Power Transmission Using Wireless Acoustic-Electric Feed-Through (WAEF)

A variety of space applications require the delivery of power into sealed structures. Since the structural integrity can be degraded by holes for cabling we present an alternative method of delivering power and information using stress waves to the internal space of a sealed structure. One particular application of this technology is in sample return missions where it is critical to preserve the sample integrity and to prevent earth contamination. Therefore, the container has to be hermetically sealed and the integrity of the seal must be monitored in order to insure to a high degree of reliability the integrity of the sample return vessel. In this study we investigated the use of piezoelectric acoustic-electric power feed-through devices to transfer electric power wirelessly through a solid wall by using elastic or acoustic waves. The technology is applicable to a range of space and terrestrial applications where power is required by electronic equipment inside sealed containers, vacuum or pressure vessels, etc., where holes in the wall are prohibitive or may result in significant structural performance degradation or unnecessarily complex designs. To meet requirements of higher power applications, the feasibility to transfer kilowatts level power was investigated. Pre-stressed longitudinal piezoelectric feed-through devices were analyzed by finite element models and an equivalent circuit model was developed to predict the power transfer characteristics to different electric loads. Based on the results of the analysis a prototype device was designed, fabricated and a demonstration of the transmission of electric power up to 1.068-kW was successfully conducted. Efficiencies in the 80-90% range were also demonstrated and methods to increase the efficiency further are currently being considered.

pressure vessels↗
DOE OSTI2020

Localized Flow Modification to Increase Power Capture of a Small-Scale Floating Undershot Waterwheel

The goal of the work described in this thesis is to design a flow augmentation device to increase the power capture and efficiency of a small-scale floating Under-Shot Water Wheel (USWW) currently being developed by Florida Atlantic University research funded by the U.S Department of Energy. The flow concentrator subsystem is intended to maximize the kinetic energy extracted by the marine hydrokinetic (MHK) energy collection device through modification of the local flow field across the capture plane. The primary objective is to increase the velocity and/or rate of mass inflow through the turbine through inserting a streamlined body in the region of interest. By utilizing the resulting flow field to increase hydraulic forcing on the waterwheel blades, the torque and/or RPM of the USWW can be increased. Based on experimental testing in the FAU wave tank at 1:5 prototype scale (280 mm wheel diameter) the flow concentrator was shown to produce an increase in device power coefficient of 17-55% measured over a velocity range of 0.16-0.45 m/s.

Hess, Sullivan↗