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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1996

Evaporation on/in Capillary Structures of High Heat Flux Two-Phase Devices

Two-phase devices (heat pipes, capillary pumped loops, loop heat pipes, and evaporators) have become recognized as key elements in thermal control systems of space platforms. Capillary and porous structures are necessary and widely used in these devices, especially in high heat flux and zero-g applications, to provide fluid transport and enhanced heat transfer during vaporization and condensation. However, some unexpected critical phenomena, such as dryout in long heat pipe evaporators and high thermal resistance of loop heat pipe evaporators with high heat fluxes, are possible and have been encountered in the use of two-phase devices in the low gravity environment. Therefore, a detailed fundamental investigation is proposed to better understand the fluid behavior in capillary-porous structures during vaporization at high heat fluxes. The present paper addresses some theoretical aspects of this investigation.

Faghri, Amir↗

NASA NTRS1999

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Asenov, Asen↗

NASA NTRS1979

Development and fabrication of low ON resistance high current vertical VMOS power FETs

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Kay, S.↗

NASA NTRS2013

ESD Test Apparatus for Soldering Irons

ESDA (Electrostatic Discharge Association) ESD STM 13.1-2000 requires frequent testing of the voltage leakage from the tip of a soldering iron and the resistance from the tip of the soldering iron to the common point ground. Without this test apparatus, the process is time-consuming and requires several wires, alligator clips, or test probes, as well as additional equipment. Soldering iron tips must be tested for electrostatic discharge risks frequently, and this typically takes a lot of time in setup and testing. This device enables the operator to execute the full test in one minute or less. This innovation is a simple apparatus that plugs into a digital multimeter (DMM) and the Common Point Ground (CPG) reference. It enables the user to perform two of the electrostatic discharge tests required in ESD STM 13.1-2000. The device consists of a small black box with two prongs sticking out of one end, two inputs on the opposite end (one of the inputs is used to connect the reference CPG to the DMM), and a metal tab on one side. Inside the box are wires, several washers of various materials, and assembly hardware (nuts and screws/bolts). The device is a passive electronic component that is plugged into a DMM. The operator sets the DMM to read voltage. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The voltage is read and recorded. The operator switches the DMM to read resistance. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The resistance is recorded. If the recorded voltage and resistance are below a number stated in ESDA ESD STM 13.1-2000, the test is considered to pass. The device includes all the necessary wiring internal to its body so the operator does not need to do any independent wiring, except for grounding. It uses a stack of high-thermal-resistance washers to minimize the heat transfer from the soldering iron to the wiring used to measure the resistance and voltages. This minimizes thermal error. The device allows very rapid execution of a test that is performed frequently.

Sancho, Jose↗

NASA NTRS1997

Using Superconducting Thin Films in Microwave Lines

High temperature superconductors(HTS) and microwaves devices form the ideal partnership. The application of superconductors in microwave devices, components and systems allows the reduction in size, power consumption and insertion loss. The surface resistance of high-Tc superconductors has been found to be two orders of magnitude lower than normal conducting copper materials. The reduction in size and power requirements, which together both lead to a reduction in system mass, coupled with reasonably accessible operating temperatures, suggest that HTS microwave components should find ready application in satellite communications systems. At present, multi- channeling communication networks demand filters with narrow bandwidth in order to allow the available RF frequency spectrum to be partitioned into small frequency bands, -and possible variation of dielectric constant from substrate to substrate is undesirable. Microwave multiplexers demand the fabrication of two identical filters in each channel. Thus, the filter with tuning function is preferable. Tunable filters are the critical component for phased array antennas in order to electronically steer the radiated beam. To fabricate a tunable filter that uses an electric field for operation, one would like a material that provides a large change on dielectric constant for a given electric field, yet has a relatively low tangent in order to minimize the insertion loss of the device. Ferroelectrics have been the materials of choice. Their large dielectric constant sufficiently increases the coupling between microwave resonators and its dependence on electric field provides timability. Development of technology promises to diminish tangent loss. The use of thin ferroelectric films sufficiently decreases insertion losses keeping considerable potential for applications. NASA Lewis Research Center is the one of the leading centers in investigation of superconductors/ferroelectric tunable components for microwave devices. A large number of possible microwave devices were fabricated and tested on the basis of thin film multilayer superconductor-ferroelectric structures. In major cases the systems with edge-coupling scheme were investigated. Dr. Genkin has recently focused on the new potentialities which implements the using of thin ferroelectric films in filters fabricated with end-coupled microstrip lines. Numerical modeling shows that these systems have large potential for application in tunable narrow- and wide-bandpass filters in the frequency range 10-20 GHz. The phase shifter with end-coupled resonant sections was fabricated and tested. Experimental results show large tunability, particular in low voltages. The possible optimization of this structure promises to improve the obtained result and to reach the low level of insertion losses.

Genkin, Varery↗

NASA NTRS1988

RF surface resistance of YBa2Cu3O(7-x) thin films

The excitement engendered by the discovery of the new T sub c oxide superconductors has led to much speculation about practical applications of thin films of these materials in digital and analog electronic devices. Most of these envisioned applications involve high frequency signals for which a detailed knowledge of the surface impedance of the novel superconductors is very important. We have measured the surface resistance of thin films of YBaCuO in the frequency range 0.5 less than f less than 17 GHz using a stripline-resonator method. The stripline procedure also was used to measure the surface resistance of high quality gold and aluminum films; the resistance values obtained agree with values predicted from the measured dc resistance using the Pippard formalism for the anomalous skin effect. The YBaCuO were produced by a multilayer deposition process. The films are formed by e-beam evaporation of 24 layers of Y, Ba, and Cu. Films with the highest transition temperature were obtained using yttria-stabilized zirconia (YSZ) substrates. After deposition, the films are transferred to a furnace where they are annealed in flowing O2 at 850 C for 2h. The furnace then is turned off and allowed to cool to 100 C in about 16 h. Auger profiling of the films made by this process shows that the concentrations of Y, Ba, Cu, and O are uniform to within 1 percent throughout the thickness of the film.

Source record↗

NASA NTRS2019

Thermal Fluctuation Noise in Mo/Au Superconducting Transition-Edge Sensor Microcalorimeters

In many superconducting transition-edge sensor (TES) microcalorimeters, the measured electrical noise exceeds theoretical estimates based on a thermal model of a single body thermally connected to a heat bath. Here, we report on noise and complex impedance measurements of a range of designs of TESs made with a Mo/Au bilayer. We have fitted the measured data using a two-body model, where the x-ray absorber and the TES are connected by an internal thermal conductance Gae. We find that the so-called excess noise measured in these devices is consistent with the noise generated from the internal thermal fluctuations between the x-ray absorber and the TES. Our fitted parameters are consistent with the origin of Gae being from the finite thermal conductance of the TES itself. These results suggest that even in these relatively low resistance Mo/Au TESs, the internal thermal conductance of the TES may add significant additional noise and could account for all the measured excess noise. Furthermore, we find that around regions of the superconducting transition with rapidly changing derivative of resistance with respect to temperature, an additional noise mechanism may dominate. These observations may lead to a greater understanding of TES devices and allow the design of TES microcalorimeters with improved performance.

Wakeham, N. A.↗

NASA NTRS1976

LaF3 infrared detector

A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.

Sher, A.↗

NASA NTRS1972

Development of a high temperature fatigue sensor.

An experimental program was conducted to extend the Tracor Safety Gauge (patent pending) to elevated temperature service. The Safety Gauge is based on a conductive composite device which can be fabricated to function as a fatigue sensor that undergoes an irreversible resistance increase which results from cumulative strain damage. Prototype sensors were developed which appear capable of 1000 deg F operation for short periods of time (approaching one hour); however, bonding difficulties currently limit their use to about 775 deg F. The resistance change of the sensor was generally on the order of 400% or greater as the fatigue life of a titanium alloy (Ti-5Al-2.5Sn) test specimen was approached.

Wells, T. L.↗

NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗

NASA NTRS1987

Fallible humans and vulnerable systems - Lessons learned from aviation

It is suggested that the problems being experienced in complex automatic systems are essentially due to the failure of information management and communication. The failure covers the entire spectrum: display devices and techniques, coding information so as to reduce human error, and information economy, i.e., resisting the temptation to bombard the operator with unlimited information simply because the system possesses the capability to do so. Since there has been great progress in hardware engineering, it is suggested that further attention is needed in the 'soft' side of systems. The approach should focus on (1) preventing human cognitive slips and (2) making the systems less vulnerable to such slips when they do occur. Most of the examples are taken from studies of cockpit automation.

Wiener, Earl L.↗

NASA NTRS1989

Compliant Prosthetic Or Robotic Joint

Rotation partly free and partly restrained by resilience and damping. Joint includes U-shaped x- and y-axis frames joined by cables that cross in at center piece. The y-axis frame rotates about y-axis on roller bearing within predetermined angular range. The y-axis frame rotates slightly farther when arm strikes stop, because cables can twist. This mimics compliant resistance of knee joint reaching limit of its forward or backward motion. Used in prosthetic device to replace diseased or damage human joint, or in robot linkage to limit movement and cushion overloads.

Kerley, James J.↗

NASA NTRS1992

Deployment hinge using wraparound strips

Aerospatiale developed a new appendage deployment concept called AMEDE (French acronym for improvement of deployment mechanisms) with a view toward increased simplicity and functional reliability. This new concept, applicable to the deployment of any type of spaceborne appendage (in particular to solar arrays), enables deployment without synchronization or speed regulation devices. On the other hand, it requires the use of hinges with low driving or resistive torques. The AMEDE concept is compared with the conventional deployment concept. The conceptual and functional principles for the ADELE hinge are presented, as well as the hinges' main characteristics. The development status of both the AMEDE concept and the ADELE (French acronym for deployment hinge using wraparound strips) hinge are addressed.

Blanc, Eric↗

NASA NTRS1994

Current-Collecting Grids For AMTEC Electrodes

Photodeposition or sputter deposition of refractory metal in grid pattern on solid electrolyte of alkali-metal thermoelectric converter (AMTEC) prior to deposition of electrode decreases electronic resistance and increases current and peak power of converter significantly. Concept also applicable to other devices that include electrically conductive, porous electrodes; such as solid-state fuel cells and solid-state electrolysis cells.

Ryan, Margaret A.↗

NASA NTRS1999

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Das, Kalyan↗

NASA NTRS2005

Electron-beam lithography for micro and nano-optical applications

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

electron-beam lithography↗

NASA NTRS2012

The Role of Proximity Effects in Transition-Edge Sensor Design and Performance

Transition-edge sensor (TES) microcalorimeters and bolometers are under development by numerous groups worldwide for a variety of applications involving the measurement of particle and photon radiation. Recent experimental and theoretical progress has led to the realization that the fundamental physics of some TES systems involves the longitudinal proximity effect between the electrical bias contacts and the TES. As such, these devices are described as SS'S (or SN'S) weak-links exhibiting Fraunhofer-like magnetic field dependence, and exponential temperature dependence, of the critical current. These discoveries, for the first time, provide a realistic theoretical framework for predicting the resistive transition as a function of temperature, current and magnetic field. In this contribution, we review the latest theoretical and experimental results and investigate how proximity effects play an important role in determining the resistive transition characteristics, which ultimately determines the dynamic range and energy resolution of TES detectors. We investigate how these effects could be utilized in device design to engineer desired transition characteristics for a given application.

Smith, Stephen J.↗

NASA NTRS2001

Cyrano "Nose" The Smell of Success

Cyrano Sciences, Inc. has commercialized a simple, accurate, non- invasive tool that enables "machines to smell". The Cyranose 320 is used for quality control purposes in the food and chemical industries. Using a sensor array and onboard pattern recognition algorithms, the lightweight, portable device works by exposing an array of polymer composite sensors to the chemical components in a vapor. When the sensors come in contact with the vapor, the polymer expands like a sponge, changing the resistance of the composites. The change in resistance is measured, and from that measurement, the presence of a pre-trained substance is determined with a quick and accurate diagnosis. This real-time, portable device enables food companies to spot test raw materials for batch-to-batch consistency, spoilage, or contamination. The Cyranose 320 is also used by chemical and petrochemical companies for quick assessment of the chemical status associated with various industrial processes. Profiling a chemical environment in a hazardous materials situation allows emergency crews to accurately select fire retardants, containment strategies, and protective gear. Future applications for the Cyranose 320 are fast growing and other uses of this technology are on the horizon.

Source record↗