High-power semiconductor-magnetic pulse generators.
Monograph on high power semiconductor-magnetic pulse generators, noting saturable inductors and silicon controlled rectifiers, circuit analysis, voltage regulator, etc
PULSED GENERATOR↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A semiconductor combustion pressure transducer for rocket-motor instability studies.
Silicon semiconductor combustion pressure transducer for high temperature HF pressure measurements within liquid rocket motor chambers
SEMICONDUCTOR DEVICE↗
A radiation method of improving the temperature characteristics of silicon semiconductor strain gages.
Si semiconductor strain gauge thermal coefficient of resistance /TCR/ reduction by high energy electron irradiation
ELECTRON RADIATION↗
Investigation of design of high voltage, high current solid state switching devices Final technical report
High voltage, high current switching devices using semiconductor controlled rectifiers
Graf, E. R.↗
A practical evaporator fixture for vacuum cleavage of semiconductor crystals
Vacuum cleavage device for producing small area evaporated metal semiconductor contacts free from oxygen or other contamination
Compton, W. D.↗
A summary of the research program in the broad field of electronics
Summary reports of research projects covering solid state materials, semiconductors and devices, quantum electronics, plasmas, applied electromagnetics, electrical engineering systems to include control communication, computer and power systems, biomedical engineering and mathematical biosciences.
Source record↗
Semiconductor diode laser material and devices with emission in visible region of the spectrum
Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.
Ladany, I.↗
The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook
The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.
Bouldin, D. L.↗
High-frequency high-voltage high-power DC-to-DC converters
The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.
Wilson, T. G.↗
On the control of flexible structures by applied thermal gradients
Thermal, elastic, and feedback analyses are applied to the case of a beam with a distributed thermal actuator. The actuator is capable of producing a thermal gradient across the section of the beam. One candidate for such an actuator uses the Peltier effect, which appears in certain semiconductors. These devices act as heat pumps when a voltage is applied, causing a temperature gradient. It is shown that the thermal gradients can induce deflection in the beam. If the thermal gradients are applied in the proper sense to a vibrating beam, it is possible to increase the vibration damping exhibited by the structure. Experimental results are given for a cantilever beam, whose first vibrational mode damping ratio was increased from 0.81 to 7.4 percent with a simple lead compensation.
Edberg, D. L.↗
Control of flexible structures by applied thermal gradients
Thermal, elastic, and feedback analyses are applied to the case of a beam with a distributed thermal actuator. The actuator is capable of producing a thermal gradient across the section of the beam. One candidate for such an actuator uses the Peltier effect, which appears in certain semiconductors. These devices act as heat pumps when a voltage is applied, causing a temperature gradient. It is shown that the thermal gradients can induce deflection in the beam. If the thermal gradients are applied in the proper sense to a vibrating beam, it is possible to increase the vibration damping exhibited by the structure. Experimental results are given for a cantilever beam, whose first vibrational mode damping ratio was increased from 0.81 to 7.4 percent with simple lead compensation.
Edberg, Donald L.↗
Microwave GaAs Integrated Circuits On Quartz Substrates
Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.
Siegel, Peter H.↗
Josephson frequency meter for millimeter and submillimeter wavelengths
Frequency measurements of electromagnetic oscillations of millimeter and submillimeter wavebands with frequency growth due to a number of reasons become more and more difficult. First, these frequencies are considered to be cutoffs for semiconductor converting devices and one has to use optical measurement methods instead of traditional ones with frequency transfer. Second, resonance measurement methods are characterized by using relatively narrow bands and optical ones are limited in frequency and time resolution due to the limited range and velocity of movement of their mechanical elements as well as the efficiency of these optical techniques decrease with the increase of wavelength due to diffraction losses. That requires a priori information on the radiation frequency band of the source involved. Method of measuring frequency of harmonic microwave signals in millimeter and submillimeter wavebands based on the ac Josephson effect in superconducting contacts is devoid of all the above drawbacks. This approach offers a number of major advantages over the more traditional measurement methods, that is one based on frequency conversion, resonance and interferometric techniques. It can be characterized by high potential accuracy, wide range of frequencies measured, prompt measurement and the opportunity to obtain a panoramic display of the results as well as full automation of the measuring process.
Anischenko, S. E.↗
Transmission Electron Microscope Measures Lattice Parameters
Convergent-beam microdiffraction (CBM) in thermionic-emission transmission electron microscope (TEM) is technique for measuring lattice parameters of nanometer-sized specimens of crystalline materials. Lattice parameters determined by use of CBM accurate to within few parts in thousand. Technique developed especially for use in quantifying lattice parameters, and thus strains, in epitaxial mismatched-crystal-lattice multilayer structures in multiple-quantum-well and other advanced semiconductor electronic devices. Ability to determine strains in indivdual layers contributes to understanding of novel electronic behaviors of devices.
Pike, William T.↗
Integrated infrared and visible image sensors
Semiconductor imaging devices integrating an array of visible detectors and another array of infrared detectors into a single module to simultaneously detect both the visible and infrared radiation of an input image. The visible detectors and the infrared detectors may be formed either on two separate substrates or on the same substrate by interleaving visible and infrared detectors.
Fossum, Eric R.↗
Active pixel image sensor with a winner-take-all mode of operation
An integrated CMOS semiconductor imaging device having two modes of operation that can be performed simultaneously to produce an output image and provide information of a brightest or darkest pixel in the image.
Yadid-Pecht, Orly↗
Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection
The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.
quantum cascade detector↗
Selective Plasma Deposition of Fluorocarbon Films on SAMs
A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.
Crain, Mark M., III↗