Efficient wavefront sensing for space-based adaptive optics
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Techniques and conceptual devices for carrying out detumbling operations are examined, and progress in the development of these concepts is discussed. Devices which reduce tumble to simple spin through active linear motion of a small mass are described, together with a Module for Automatic Dock and Detumble (MADD) that could perform an orbital transfer from the shuttle in order to track and dock at a preselected point on the distressed craft. Once docked, MADD could apply torques by firing thrustors to detumble the passive vehicle. Optimum combinations of mass-motion and external devices for various situation should be developed. The need for completely formulating the automatic control logic of MADD is also emphasized.
A systems analysis of synchronous, orbit-based power generation and relay systems that could be operational in the 1990's is described along with a comparison with earth-based systems to be operational in the same time frame. Operational and economic requirements for the orbiting systems and near term research activities which will be required to assure feasibility, development, launch and operational capabilities of such systems in the post- 1990 time frame are examined.
Program plans, schedules, and costs are determined for a synchronous orbit-based power generation and relay system. Requirements for the satellite solar power station (SSPS) and the power relay satellite (PRS) are explored. Engineering analysis of large solar arrays, flight mechanics and control, transportation, assembly and maintenance, and microwave transmission are included.
The results are presented of nine months of technical study of non-photovoltaic options for the generation of electricity for terrestrial use by satellite power stations (SPS). A concept for the augmentation of ground-based solar power plants by orbital sunlight reflectors was also studied. Three SPS types having a solar energy source and two which used nuclear reactors were investigated. Data derived for each included: (1) configuration definition, including mass statement; (2) information for use in environmental impact assessment; (3) energy balance (ratio of energy produced to that required to achieve operation), and (4) development and other cost estimates. Cost estimates were dependent upon the total program (development, placement and operation of a number of satellites) which was postulated. This postulation was based upon an analysis of national power capacity trends and guidelines received from MSFC.
The technical and economic feasibility of Satellite Solar Power Systems was studied with emphasis on the analysis and definition of an integrated strawman configuration concept, from which credible cost data could be estimated. Specifically, system concepts for each of the major subprogram areas were formulated, analyzed, and iterated to the degree necessary for establishing an overall, workable baseline system design. Cost data were estimated for the baseline and used to conduct economic analyses. The baseline concept selected was a 5-GW crystal silicon truss-type photovoltaic configuration, which represented the most mature concept available. The overall results and major findings, and the results of technical analyses performed during the final phase of the study efforts are reported.
The Microwave Fower Beam Ionosphere effects and critical interfaces between th Microwave Power Transmission System (MPTS) and the Satellite were studied as part of the NASA/MSFC continuing research on the feasibility of power transmission from geosynchronous orbit. Theoretical predications of ionospheric modifications produced by the direct interaction of the MPTS on the earth's upper atmosphere are used to determine their impact on the performance of the Microwave Power Beam and Pilot Beam System as well as on other RF systems effected by the ionosphere. A technology program to quantitatively define these interactions is developed. Critical interface areas between the MPTS and the satellite which could have a major impact on cost and performance of the power system are idenfified and analyzed. The areas selected include: use of either a 20 kV versus 40 kV Amplitron, thermal blockage effects of Amplitron heat radiation by the satellite structure, effect of dielectric carry-through structure on power beam, and effect of material sublimation on performance of the Amplitron in Geosynchronous Orbit.
Solar cells and optical configurations for the SSPS were examined. In this task, three specific solar cell materials were examined: single crystal silicon, single crystal gallium arsenide, and polycrystalline cadmium sulfide. The comparison of the three different cells on the basis of a subsystem parametric cost per kW of SSPS-generated power at the terrestrial utility interface showed that gallium arsenide was the most promising solar cell material at high concentration ratios. The most promising solar cell material with no concentration, was dependent upon the particular combination of parameters representing cost, mass and performance that were chosen to represent each cell in this deterministic comparative analysis. The potential for mass production, based on the projections of the present state-of-the-art would tend to favor cadmium sulfide in lieu of single crystal silicon or gallium arsenide solar cells.
A sputtering system was developed to deposit aluminum and aluminum alloys by the dc sputtering technique. This system is designed for a high level of cleanliness and for monitoring the deposition parameters during film preparation. This system is now ready for studying the deposition and annealing parameters upon double-level metal preparation. A technique recently applied for semiconductor analysis, the finite element method, was studied for use in the computer modeling of two dimensional MOS transistor structures. It was concluded that the method has not been sufficiently well developed for confident use at this time. An algorithm was developed for confident use at this time. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program which was developed was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients.
An existing in inventory computer hardware/software package (B-1 RFS/ECM) was repackaged and applied to multiple missile/space programs. Concurrent with the application efforts, low risk modifications were made to the computer from program to program to take advantage of newer, advanced technology and to meet increasingly more demanding requirements (computational and memory capabilities, longer life, and fault tolerant autonomy). It is concluded that microprocessors hold promise in a number of critical areas for future space computer applications. However, the benefits of the DoD VHSIC Program are required and the old proliferation problem must be revised.
Furnaces and photolithography related equipment were applied to experiments on double layer metal. The double layer metal activity emphasized wet chemistry techniques. By incorporating the following techniques: (1) ultrasonic etching of the vias; (2) premetal clean using a modified buffered hydrogen fluoride; (3) phosphorus doped vapor; and (4) extended sintering, yields of 98 percent were obtained using the standard test pattern. The two dimensional modeling problems have stemmed from, alternately, instability and too much computation time to achieve convergence.
A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time.
The research facilities of the Mississippi State University devoted to microelectronics are described. The fabrication and processing capabilities, computer aided design, and experimental evaluation capabilities are discussed.
The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.
Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.