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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Enhanced outcoupling in flexible organic light-emitting diodes on scattering polyimide substrates

We demonstrate an upscalable approach to increase outcoupling in organic light-emitting diodes (OLEDs) fabricated on flexible substrates. The outcoupling enhancement is enabled by introducing a thin film of microporous polyimide on the backside of silver nanowire (AgNW) electrodes embedded in neat colorless polyimide. This porous polyimide film, prepared by immersion precipitation, utilizes a large index contrast between the polyimide host and randomly distributed air voids, resulting in broadband haze (>75%). In addition, the composite polyimide/AgNW scattering substrate inherits the high thermal (>360 °C), chemical, and mechanical stability of polyimides. The outcoupling efficiency of the composite scattering substrate is studied via optical characterization of the composite substrate and electron microscopy of the scattering film. The flexible scattering substrates compared to glass/indium tin oxide (ITO) allows for a 74% enhancement in external quantum efficiency (EQE) for a phosphorescent green OLED, and 68% EQE enhancement for a phosphorescent white OLED. The outcoupling enhancement remains unharmed after 5000 bending cycles at a 2 mm bending radius. Moreover, the color uniformity over viewing angles is improved, an important feature for lighting applications.

42 ENGINEERING↗
DOE OSTI2011

Influence of Substrate on Crystallization in Polythiophene/fullerene Blends

The nanoscale morphology of the active layer in organic, bulk heterojunction (BHJ) solar cells is crucial to device performance. Often a combination of casting conditions and post deposition thermal treatment is used to optimize the morphology. In general, the development of microscopic crystals is deleterious, as the exciton diffusion length is {approx}10 nm. We find that the microscopic crystallization behavior in polythiophene/fullerene blends is strongly influenced by the substrate on which the BHJ is cast. With a silicon oxide substrate, the crystal nucleation density is high and significant crystallization occurs at a temperature of 140 C. On more hydrophobic substrates, significantly higher temperatures are required for observable crystallization. This difference is attributed to the interfacial segregation of the PCBM, controlled by the substrate surface energy. The substrate dependence of crystallization has significant implications on the fullerene crystal growth mechanisms and practical implications for device studies.

14 SOLAR ENERGY↗
DOE OSTI2015

Identification of Salmonella Typhimurium deubiquitinase SseL substrates by immunoaffinity enrichment and quantitative proteomic analysis

Ubiquitination is a key protein post-translational modification that regulates many important cellular pathways and whose levels are regulated by equilibrium between the activities of ubiquitin ligases and deubiquitinases. Here we present a method to identify specific deubiquitinase substrates based on treatment of cell lysates with recombinant enzymes, immunoaffinity purification and global quantitative proteomic analysis. As model system to identify substrates, we used a virulence-related deubiquitinase secreted by Salmonella enterica serovar Typhimurium into the host cells, SseL. By using this approach two SseL substrates were identified in RAW 264.7 murine macrophage-like cell line, S100A6 and het-erogeneous nuclear ribonuclear protein K, in addition to the previously reported K63-linked ubiquitin chains. These substrates were further validated by a combination of enzymatic and binding assays. Finally, this method can be used for the systematic identification of substrates of deubiquitinases from other organisms and applied to study their functions in physiology and disease.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2019

Surface-Synthesized Graphene Nanoribbons for Room Temperature Switching Devices: Substrate Transfer and ex Situ Characterization

Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps which makes them excellent candidates for room temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. This contribution addresses some of the most important challenges, including GNR fabrication scalability, substrate transfer, long-term stability under ambient conditions, and ex situ characterization. We focus on 7- and 9-atom-wide armchair graphene nanoribbons (i.e., 7-AGNR and 9-AGNR) grown on 200 nm Au(111)/mica substrates using a high throughput system. Transfer of both 7- and 9-AGNRs from their Au growth substrate onto various target substrates for additional characterization is accomplished utilizing a polymer-free method that avoids residual contamination. This results in a homogeneous GNR film morphology with very few tears and wrinkles, as examined by atomic force microscopy. Raman spectroscopy indicates no significant degradation of GNR quality upon substrate transfer and reveals that GNRs have remarkable stability under ambient conditions over a 24 month period. The transferred GNRs are analyzed using multiwavelength Raman spectroscopy, which provides detailed insight into the wavelength dependence of the width-specific vibrational modes. Finally, we characterize the optical properties of 7- and 9-AGNRs via ultraviolet–visible (UV–vis) spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Structures of LeuT in bicelles define conformation and substrate binding in a membrane-like context

Neurotransmitter sodium symporters (NSSs) catalyze the uptake of neurotransmitters into cells, terminating neurotransmission at chemical synapses. Consistent with the role of NSSs in the central nervous system, they are implicated in multiple diseases and disorders. LeuT, from Aquifex aeolicus, is a prokaryotic ortholog of the NSS family and has contributed to our understanding of the structure, mechanism and pharmacology of NSSs. At present, however, the functional state of LeuT in crystals grown in the presence of n-octyl-{beta}-D-glucopyranoside ({beta}-OG) and the number of substrate binding sites are controversial issues. Here we present crystal structures of LeuT grown in DMPC-CHAPSO bicelles and demonstrate that the conformations of LeuT-substrate complexes in lipid bicelles and in {beta}-OG detergent micelles are nearly identical. Furthermore, using crystals grown in bicelles and the substrate leucine or the substrate analog selenomethionine, we find only a single substrate molecule in the primary binding site.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2011

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2<x<0.4) as a source materials. The characteristics of the films such as structural and electrical properties were investigated in terms of substrate temperature. X‐ray diffraction studies of thin films confirmed the polycrystalline and show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with increase of substrate temperature while dislocation density and strain are decreases. Hall measurements indicate that the films were n‐type, having carrier concentration ∼10{sup 14} cm{sup −3} and mobility ∼10{sup 3} cm{sup 2}/Vs for the film thickness of 300 nm. It is also observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature. At the request of all authors, Rahul, S. R. Vishwakarma, Aneet Kumar Verma, and Ravi Shankar Nath Tripathi, and due to errors in the article, the paper is retracted from the scientific record.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Islands stretch test for measuring the interfacial fracture energy between a hard film and a soft substrate

We present a technique for measuring the interfacial fracture energy, {Gamma}{sub i}, between a hard thin film and a soft substrate. A periodic array of hard thin islands is fabricated on a soft substrate, which is then subjected to uniaxial tension under an optical microscope. When the applied strain reaches a critical value, delamination between the islands and the substrate starts from the edge of the islands. As the strain is increased, the interfacial cracks grow in a stable fashion. At a given applied strain, the width of the delaminated region is a unique function of the interfacial fracture energy. We have calculated the energy release rate driving the delamination as a function of delamination width, island size, island thickness, and applied strain. For a given materials system, this relationship allows determination of the interfacial fracture energy from a measurement of the delamination width. The technique is demonstrated by measuring the interfacial fracture energy of plasma-enhanced chemical vapor deposition SiN{sub x} islands on a polyimide substrate. We anticipate that this technique will find application in the flexible electronics industry where hard islands on soft substrates are a common architecture to protect active devices from fracture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates

Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO{sub 2} and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO{sub 2} exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si{sub 1−x}Ge{sub x} buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1−x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effects of ion and nanosecond-pulsed laser co-irradiation on the surface nanostructure of Au thin films on SiO{sub 2} glass substrates

Ion irradiation and short-pulsed laser irradiation can be used to form nanostructures on the surfaces of substrates. This work investigates the synergistic effects of ion and nanosecond-pulsed laser co-irradiation on surface nanostructuring of Au thin films deposited under vacuum on SiO{sub 2} glass substrates. Gold nanoparticles are randomly formed on the surface of the substrate after nanosecond-pulsed laser irradiation under vacuum at a wavelength of 532 nm with a repetition rate of 10 Hz and laser energy density of 0.124 kJ/m{sup 2}. Gold nanoparticles are also randomly formed on the substrate after 100-keV Ar{sup +} ion irradiation at doses of up to 3.8 × 10{sup 15} ions/cm{sup 2}, and nearly all of these nanoparticles are fully embedded in the substrate. With increasing ion irradiation dose (number of incident laser pulses), the mean diameter of the Au nanoparticles decreases (increases). However, Au nanoparticles are only formed in a periodic surface arrangement after co-irradiation with 6000 laser pulses and 3.8 × 10{sup 15} ions/cm{sup 2}. The periodic distance is ∼540 nm, which is close to the wavelength of the nanosecond-pulsed laser, and the mean diameter of the Au nanoparticles remains at ∼20 nm with a relatively narrow distribution. The photoabsorption peaks of the ion- or nanosecond-pulsed laser-irradiated samples clearly correspond to the mean diameter of Au nanoparticles. Conversely, the photoabsorption peaks for the co-irradiated samples do not depend on the mean nanoparticle diameter. This lack of dependence is likely caused by the periodic nanostructure formed on the surface by the synergistic effects of co-irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermodynamic model of coherent island formation on vicinal substrate

A thermodynamic model has been proposed to address the formation of coherent island on the vicinal substrate. The morphological transition from square based island to elongated based one with various substrate misorientations is described. The initial stage of nucleation and growth process of islands in Stranski–Krastanow system is studied by taking into account the elastic deformations and the change of energy in the case of two-dimensional growth mode. The theoretical analysis shows the minimum nucleation barrier of island is on the decrease with increment of substrate misorientation, which means the nucleation of island on vicinal substrate is more favorable than that on flat substrate. By using the fitting data of experimental results done by Persichetti et al., [Phys. Rev. Lett. 104, 036104 (2010) and Phys. Rev. B 82, 121309(R) (2010)], we provide a meaningful explanation of the experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Improved electrical mobility in highly epitaxial La:BaSnO{sub 3} films on SmScO{sub 3}(110) substrates

Heteroepitaxial growth of BaSnO{sub 3} and Ba{sub 1−x}La{sub x}SnO{sub 3} (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO{sub 3} (001) and SmScO{sub 3} (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities, and carrier concentrations of 4.4 mΩ cm, 10.11 cm{sup 2} V{sup −1} s{sup −1}, and 1.38 × 10{sup 20} cm{sup −3} on SmScO{sub 3} and 7.8 mΩ cm, 5.8 cm{sup 2} V{sup −1} s{sup −1}, and 1.36 × 10{sup 20} cm{sup −3} on SrTiO{sub 3} ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO{sub 3} substrate are attributed to reduction in dislocation density from the lower lattice mismatch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of substrate material, orientation, and surface termination on GaN nanowire growth

In this work, we investigate the fundamental role of the substrate material, surface orientation, and termination on GaN nanowire (NW) nucleation and growth. First of all, the use of a patterned a-Si/diamond substrate confirms that NW shape and dimension are mainly determined by the applied growth conditions instead of the nature of the substrate. More important is the surface orientation as it defines growth direction and epitaxial relationship towards the GaN NWs, where both (111) and (100) surfaces yield NW growth for equivalent growth conditions. (110) substrates are found to be not suited for NW growth. Finally, the surface termination of diamond is demonstrated to survive the employed growth conditions and, therefore, to affect the nucleation of nanowires and the electronic properties of the heterointerface by its surface dipoles. This difference in nucleation is exploited as an alternative approach for selective area growth without deposition of a foreign mask material, which might also be transferable to other substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Single-layer MoS{sub 2} roughness and sliding friction quenching by interaction with atomically flat substrates

We experimentally study the surface roughness and the lateral friction force in single-layer MoS{sub 2} crystals deposited on different substrates: SiO{sub 2}, mica, and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy. We find a strong dependence of the MoS{sub 2} roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS{sub 2} crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS{sub 2} flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS{sub 2} crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phonon scattering in graphene over substrate steps

We calculate the effect on phonon transport of substrate-induced bends in graphene. We consider bending induced by an abrupt kink in the substrate, and provide results for different step-heights and substrate interaction strengths. We find that individual substrate steps reduce thermal conductance in the range between 5% and 47%. We also consider the transmission across linear kinks formed by adsorption of atomic hydrogen at the bends and find that individual kinks suppress thermal conduction substantially, especially at high temperatures. Our analysis show that substrate irregularities can be detrimental for thermal conduction even for small step heights.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Top-gated chemical vapor deposited MoS{sub 2} field-effect transistors on Si{sub 3}N{sub 4} substrates

We report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS{sub 2}) top-gated field-effect transistors (FETs) on silicon nitride (Si{sub 3}N{sub 4}) substrates. We show that Si{sub 3}N{sub 4} substrates offer comparable electrical performance to thermally grown SiO{sub 2} substrates for MoS{sub 2} FETs, offering an attractive passivating substrate for transition-metal dichalcogenides (TMD) with a smooth surface morphology. Single-crystal MoS{sub 2} grains are grown via vapor transport process using solid precursors directly on low pressure CVD Si{sub 3}N{sub 4}, eliminating the need for transfer processes which degrade electrical performance. Monolayer top-gated MoS{sub 2} FETs with Al{sub 2}O{sub 3} gate dielectric on Si{sub 3}N{sub 4} achieve a room temperature mobility of 24 cm{sup 2}/V s with I{sub on}/I{sub off} current ratios exceeding 10{sup 7}. Using HfO{sub 2} as a gate dielectric, monolayer top-gated CVD MoS{sub 2} FETs on Si{sub 3}N{sub 4} achieve current densities of 55 μA/μm and a transconductance of 6.12 μS/μm at V{sub tg} of −5 V and V{sub ds} of 2 V. We observe an increase in mobility at lower temperatures, indicating phonon scattering may dominate over charged impurity scattering in our devices. Our results show that Si{sub 3}N{sub 4} is an attractive alternative to thermally grown SiO{sub 2} substrate for TMD FETs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗