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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1982

Bread board float zone experiment system for high purity silicon

A breadboard float zone experimental system has been established at Westech Systems for use by NASA in the float zone experimental area. A used zoner of suitable size and flexibility was acquired and installed with the necessary utilities. Repairs, alignments and modifications were made to provide for dislocation free zoning of silicon. The zoner is capable of studying process parameters used in growing silicon in gravity and is flexible to allow trying of new features that will test concepts of zoning in microgravity. Characterizing the state of the art molten zones of a growing silicon crystal will establish the data base against which improvements of zoning in gravity or growing in microgravity can be compared. 25 mm diameter was chosen as the reference size, since growth in microgravity will be at that diameter or smaller for about the next 6 years. Dislocation free crystals were growtn in the 100 and 111 orientations, using a wide set of growth conditions. The zone shape at one set of conditions was measured, by simultaneously aluminum doping and freezing the zone, lengthwise slabbing and delineating by etching. The whole set of crystals, grown under various conditions, were slabbed, polished and striation etched, revealing the growth interface shape and the periodic and aperiodic natures of the striations.

Kern, E. L.↗
NASA NTRS1982

Part 1: Silicon ingot casting. Heat Exchanger Method (HEM)

Directional solidification by the Heat Exchanger Method (HEM) is a viable approach for directional solidification of silicon ingots used for terrestrial solar cell applications. Some of the significant advances made during this phase of the program were: ingot size, 34 cm x 34 cm x 17 cm - 45 kg, usable material yield - 90%, solar cell efficiency averaged over the whole ingot - 85% of control CZ (35 kg ingot), very uniform resistivity over the boule, and cycle time for 36 kg ingots - 56 hours. Some of the problems encountered were growth rate decrease with increased ingot height, silicon carbide precipitates, and high dislocation density in HEM material. The silicon carbide is attributed to backstreaming of oil vapors from the vacuum pump; the high dislocation density is associated with the thermal history of the boule.

Source record↗
NASA NTRS1984

Orientation and Morphology Effects in Rapid Silicon Sheet Solidification

Radial growth anisotropies and equilibrium forms of point nucleated, dislocation free silicon sheets spreading horizontally on the free surface of a silicon melt were measured for (100), (110), (111), and (112) sheet planes. The growth process was recorded. Qualitative Wulff surface free energy polar plots were deduced from the equilibrium shapes for each sheet plane. Predicted geometries for the tip shape of unidirectional, dislocation free, horizontally grown sheets growing in various directions within the planes were analyzed. Polycrystalline sheets and dendrite propagation were analyzed. For dendrites, growth rates on the order of 2.5 m/min and growth rate anisotropies of 25 are measured.

Ciszek, T. F.↗
NASA NTRS1982

Directional solidification of silicon in carbon crucibles by an oscillating crucible technique

The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.

Daud, T.↗
NASA NTRS1984

The microstructure of minerals in coarse-grained Ca-Al-rich inclusions from the Allende meteorite

Transmission electron microscopy (TEM) is used to investigate the microstructure and microchemistry of minerals in Ca-Al-rich, coarse-grained inclusions (CAI) from the meteorite. The spinels contain only low to moderate dislocation densities and are characterized by a ubiquitous, fine black spotty texture that is thought to originate from a slightly nonstoichiometric composition. Whereas the Ti-Al-pyroxenes are relatively devoid of features, they contain veins of secondary phases apparently deposited in unhealed cracks. Chromite is identified in the veins, indicating transport of oxidized iron during alteration. The melilites show the greatest variety of microstructures and are the most heavily altered phase in CAI. High dislocation densities are common and the crystals exhibit considerable internal strain, suggesting that they have not been annealed.

Barber, D. J.↗
NASA NTRS1984

Strain analysis of the Leoville chondrite and conditions in asteroidal interiors

Deformed chondrules in the Leoville carbonaceous chondrite define a preferred orientation, also recognized previously in other CV3 chondrites. Identifying the strain mechanism is necessary for understanding the conditions which caused this compressional shortening. Luckly, the major mineralogical constituent of CV3 meteorites is olivine, for which experimental data on strain mechanisms exist. The conditions that caused strain in the olivine were obviously applicable to the whole meteorite. Possible mechanisms of olivine deformation are cataclasis, low temperature plasticity, power low creep, and diffusional flow, each of which occurs under different combinations of temperature and deviatoric stress. Cataclasis can be ruled out on the basis of its high deviatoric stress requirements; some fractures occur in chondrule olivines, but these may have formed during excavation or impact. Low temperature plasticity and power low creep occur by means of various types of lattice dislocations. However, methods of thermal decoration and chemical etching of dislocations failed to indicate evidence for either mechanism. Thus, the inference is that diffusional flow, characteristic of low to moderately high temperatures and low deviatoric stress, was the major deformation mechanism.

Cain, P. M.↗
NASA NTRS1984

Stress studies in EFG

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.

Source record↗
NASA NTRS1984

Solid/melt interface studies of high-speed silicon sheet growth

Radial growth-rate anisotropies and limiting growth forms of point nucleated, dislocation-free silicon sheets spreading horizontally on the free surface of a silicon melt have been measured for (100), (110), (111), and (112) sheet planes. Sixteen-millimeter movie photography was used to record the growth process. Analysis of the sheet edges has lead to predicted geometries for the tip shape of unidirectional, dislocation-free, horizontally growing sheets propagating in various directions within the above-mentioned planes. Similar techniques were used to study polycrystalline sheets and dendrite propagation. For dendrites, growth rates on the order of 2.5 m/min and growth rate anisotropies on the order of 25 were measured.

Ciszek, T. F.↗
NASA NTRS1985

On the use of internal state variables in thermoviscoplastic constitutive equations

The general theory of internal state variables are reviewed to apply it to inelastic metals in use in high temperature environments. In this process, certain constraints and clarifications will be made regarding internal state variables. It is shown that the Helmholtz free energy can be utilized to construct constitutive equations which are appropriate for metallic superalloys. Internal state variables are shown to represent locally averaged measures of dislocation arrangement, dislocation density, and intergranular fracture. The internal state variable model is demonstrated to be a suitable framework for comparison of several currently proposed models for metals and can therefore be used to exhibit history dependence, nonlinearity, and rate as well as temperature sensitivity.

Allen, D. H.↗
NASA NTRS1984

Plastic deformation of silicon dendritic web ribbons during the growth

The distribution of slip dislocations in silicon dendritic web ribbons due to plastic deformation during the cooling phase of the growth was studied. The results show the existence of two distinguishable stress regions across the ribbon formed during the plastic deformation stage, namely, shear stress at the ribbon edges and tensile stress at the middle. In addition, slip dislocations caused by shear stress near the edges appear to originate at the twin plane.

Cheng, L. J.↗
NASA NTRS1985

Nonstoichiometric defects in GaAs and the EL2 bandwagon

In the present paper, an attempt is made to formulate a common framework for a discussion of nonstoichiometric defects, especially EL2 and dislocations. An outline is provided of the most important settled and unsettled issues, taking into account not only fundamental interests, but also urgent needs in advancing IC technology. Attention is given to stoichiometry-controlled compensation, the expected role of melt stoichiometry in electrical conductivity for the basic atomic disorders, defect equilibria-dislocations and EL2, and current issues pertaining to the identification of EL2. It is concluded that nonstoichiometric defects play a critical role in the electronic properties of GaAs and its electronic applications. Very significant progress has been recently made in learning how to adjust melt stoichiometry in order to maximize its beneficial effects and minimize its detrimental ones.

Lagowski, J.↗
NASA NTRS1984

Recombination-active defects in silicon ribbon and polycrystalline solar cells

This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.

Cheng, L. J.↗
NASA NTRS1985

Stress studies in edge-defined film-fed growth of silicon ribbons

Stress and efficiency studies on sheet silicon are reported. It was found that the bulk diffusion length of stressed float zone and Czochralski silicon is limited by point defect recombination to about 20 micrometers in dislocation free regions after high temperature heat treatment and stress application. If in-diffusion by iron occurs, dislocations, carbon and oxygen, do not produce significant gettering with annealing. Further work ideas are suggested.

Kalejs, J.↗
NASA NTRS1985

Damping and modulus measurements in B2 transition metal aluminides

The polycrystalline intermetallic alloys FeAl (50.9 to 58.2 percent Fe), NiAl (49.2 to 55.9 percent Ni) and CoAl (48.5 to 52.3 percent Co) have the B2 structure and are of interest for high temperature applications. The PUCOT (piezoelectric ultrasonic composite oscillator technique) has been used to measure mechanical damping or internal friction and Young's modulus has been used as a function of temperature and composition for these materials. The modulus data for six CoAl alloys at temperatures up to 1300 K are presented. Examples are given of the strain amplitude dependence of internal friction for four CoAl alloys. The curves showed the break away phenomenon and are interpreted in terms of a theory dealing with the pinning of dislocation lines and their eventual break away at large strain amplitudes. The dislocation density was calculated to be about 10 to the 8th per sq m. For all the compositions (X1) of CoAl studied, a single equation could be fitted to the data.

Harmouche, M. R.↗
NASA NTRS1987

Crystal Growth in Liquid-Encapsulated Float Zone

Suitably chosen liquid encapsulant placed around melt zone in float-zone crystal-growth system performs four important functions enhancing purity and reducing strains and dislocations in final crystal. In new technique, grow dislocation-free crystals with precisely controlled composition even from materials not amenable to conventional float-zone crystal-growth method. Support provided by encapsulant make it practical to process materials of low surface tension.

Naumann, Robert J.↗
NASA NTRS1985

Electrical, structural and chemical characterization of Si sheet material

Web Dendritic Si ribbons are deformed under a well-defined four point bending stress. Since the mechanical properties of Si are known to depend on the 0 content of the material, 0 measurements using Fourier Transform Infrared Spectroscopy were done to determine a proper control sample of non-defected single crystal Si. Four point bending revealed a unique two step bending behavior for the Web Si ribbons. An initial theory for this behavior involves the interaction of the dislocations generated by the deformation with the central twin planes of the ribbons. Measurements showed a uniformly high 0 content for the Web Si ribbons, approximately 10 to the 18th power atoms/cu.cm. The Web samples had a much broader absorption peak at 9 microns than is usually seen for well-annealed single crystal Si. This broadening is thought to be related to stress in the Web Si ribbons. Two samples containing a known amount of residual stress support this hypothesis. Also, a shoulder on the infrared absorption peak associated with interstitial 0 in Si appears in the transmission vs. wavenumber plots for some of the Web samples. This shoulder has been associated with 0-vacancy complexes or with 0 at dislocations. The O content and configuration do not seem to correlate with the growth configuration of the Web Si ribbon.

Ast, D. G.↗
NASA NTRS1986

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗
NASA NTRS1986

Analysis of silicon stress/strain relationships

Results are presented for work on stress-strain relationships in silicon ribbon. Calculations of stress fields, dislocation desities, and buckling were made; uniaxial tensile tests were made on silicon at 1150 C; and dislocation motion studies were performed.

Dillon, O.↗