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At least 505 records · Page 28

Effect of the doped fibre length on soliton pulses of a bidirectional mode-locked fibre laser

A passively bidirectional mode-locked fibre laser is demonstrated using a highly concentrated erbium-doped fibre (EDF) as a gain medium. To accomplish mode-locked operation in a short cavity, use is made of carbon nanotubes (CNTs) as a saturable absorber. Soliton pulses are obtained at a wavelength of 1560 nm with a repetition rate ranging from 43.92 MHz to 46.97 MHz and pulse width stretching from 0.56 ps to 0.41 ps as the EDF length is reduced from 60 cm to 30 cm. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of 3d doping on the electronic structure of BaFe2As2

The electronic structure of BaFe2As2 doped with Co, Ni and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d10 shell. These findings help shed light on why superconductivity can occur in BaFe2As2 doped with Co and Ni but not Cu.

36 MATERIALS SCIENCE↗

Effect of Mn doping and charge transfer on LaTi 1- x Mn x O 3

Here, we report the magnetic and electronic transport properties of Mn-doped LaTi 1-x Mn x O 3 (x= 0, 0.1, 0.3, 0.5) as a function of temperature and an applied magnetic field. It was found that the Mn-doped samples show a magnetic transition which is not present in the parent LaTiO 3 . The Mn-doped samples showed fluctuations in magnetization at low fields below their Néel transition temperature indicating electronic phase separation in the material. Increased Mn content in the sample strengthens the ferromagnetic-like moment while maintaining G-type antiferromagnetic phase by charge transfer from Mn to Ti and influencing orbital ordering of the Ti 3+ t 2g orbitals. The results are discussed in parallel with transport and bulk magnetization measurements detailing the electronic behavior. An additional context for the mechanism is supported by first-principles density-function theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of Ni doping on vortex pinning in CaK ( F e 1 - x N i x ) 4 A s 4 single crystals

We study the correlation between chemical composition and vortex dynamics in Ni-doped CaK(Fe 1–x Ni x ) 4 As 4 (x = 0, 0.015, 0.025, 0.03, and 0.05) single crystals by performing measurements of the critical current densities J c and the flux creep rates S . The magnetic relaxation of all the crystals is well described by the collective creep theory. The samples display a glassy exponent μ within the predictions for vortex bundles in a weak pinning scenario and relatively small characteristic pinning energy ( U 0 < 100K). The undoped crystals display modest J c values at low temperatures and high magnetic fields applied along the c axis. J c ( T ) dependences at high fields display an unusual peak. The enhancement in J c ( T ) matches with an increase in U 0 and the appearance of a second peak in the magnetization. As Ni doping increases, whereas there is a monotonic decrease in T c there is a nonmonotonic change in J c . Initially J c increases, reaching a maximum value for x = 0.015, and then J c decreases for x ≥ 0.025. This change in J c ( x ) is coincident with the onset of antiferromagnetic order. The magnetic field dependence of J c ( H ) also manifests a change in behavior between these x values. The analysis of the vortex dynamics for small and intermediate magnetic fields shows a gradual evolution in the glassy exponent μ with Ni content, x . As a result, this implies that there is no appreciable change in the mechanism that determines the vortex relaxation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of hole doping on the electronic structure and the Fermi surface in the Hubbard model within norm-conserving cluster pertubation theory

The concentration dependences of the band structure, spectral weight, density of states, and Fermi surface in the paramagnetic state are studied in the Hubbard model within cluster pertubation theory with 2 Multiplication-Sign 2 clusters. Representation of the Hubbard X operators makes it possible to control conservation of the spectral weight in constructing cluster perturbation theory. The calculated value of the ground-state energy is in good agreement with the results obtained using nonperturbative methods such as the quantum Monte Carlo method, exact diagonalization of a 4 Multiplication-Sign 4 cluster, and the variational Monte Carlo method. It is shown that in the case of hole doping, the states in the band gap (in-gap states) lie near the top of the lower Hubbard band for large values of U and near the bottom of the upper band for small U. The concentration dependence of the Fermi surface strongly depends on hopping to second (t Prime ) and third (t Double-Prime ) neighbors. For parameter values typical of HTSC cuprates, the existence of three concentration regions with different Fermi surfaces is demonstrated. It is shown that broadening of the spectral electron density with an energy resolution typical of contemporary ARPES leads to a pattern of arcs with a length depending on the concentration. Only an order-of-magnitude decrease in the linewidth makes it possible to obtain the true Fermi surface from the spectral density. The kinks associated with strong electron correlations are detected in the dispersion relation below the Fermi level.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evaluating the Effects of Nitrogen Doping and Oxygen Doping on SRF Cavity Performance

Superconducting radiofrequency (SRF) cavities are resonators with extremely low surface resistance that enable accelerating cavities to have extremely high quality factors (Q₀). High Q₀ decreases the capital required to keep the accelerators cold by reducing power loss. The performance of SRF cavities is largely governed by the surface composition of the first §I{100}{nm} of the cavity surface. Impurities such as oxygen and nitrogen have been observed to yield high Q₀, but their precise roles are still being studied. Here, we compare the performance of cavities doped with nitrogen and oxygen in terms of surface composition and heating behavior with field. A simulation of the diffusion of oxygen into the bulk of the cavity was built using COMSOL Multiphysics software. Simulated results were compared to the actual surface composition of the cavities as determined from secondary ion mass spectrometry analysis. Understanding how these impurities affects performance allows us to have further insight into the underlying mechanisms that enable these surface treatments to yield high Q₀.

43 PARTICLE ACCELERATORS↗

Examining the Effects of Oxygen Doping on SRF Cavity Performance

Superconducting radiofrequency (SRF) cavities are resonators with extremely low surface resistance that enable accelerating cavities to have extremely high quality factors (Q₀). High (Q₀) decreases the capital required to keep accelerators cold by reducing power loss. The performance of SRF cavities is largely governed by the surface composition of the first 100 nm of the cavity surface. Impurities such as oxygen and nitrogen have been observed to yield high Q₀, but their precise roles are still being studied. Here, we compare the performance of cavities doped with nitrogen and oxygen in terms of fundamental material properties to understand how these impurities affect performance. This enables us to have further insight into the underlying mechanisms that enable these surface treatments to yield high Q₀ performance.

43 PARTICLE ACCELERATORS↗

Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells

Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.

Berman, P. A.↗

Effect of impurity doping concentration on solar cell output

Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.

Iles, P. A.↗