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This presentation provides an update on development of the Long-Lived In-situ Solar System Explorer (LLISSE). LLISSE is a small probe being developed to provide long-term measurements of simple but important scientific parameters from the surface of Venus. High level summary of recent activities and progress is provided. LLISSE is a small and completely independent probe for Venus surface applications
This presentation and poster provide a brief overview on the Long-Lived In-situ Solar System Explorer (LLISSE). This is a small probe being developed to provide long-term measurements of simple but important scientific parameters from the surface of Venus. This is a revolutionary concept to Venus exploration and promises to change our paradigm of exploring this unique and challenging environment.
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Explore the source record for details and available documents.
Explore the source record for details and available documents.
To advance the state-of-the-art in Hall thruster technology, NASA is developing a 12.5-kW, high-specific-impulse, high-throughput thruster for the Solar Electric Propulsion Technology Demonstration Mission. In order to meet the demanding lifetime requirements of potential missions such as the Asteroid Redirect Robotic Mission, magnetic shielding was incorporated into the thruster design. Two units of the resulting thruster, called the Hall Effect Rocket with Magnetic Shielding (HERMeS), were fabricated and are presently being characterized. The first of these units, designated the Technology Development Unit 1 (TDU1), has undergone extensive performance and thermal characterization at NASA Glenn Research Center. A preliminary lifetime assessment was conducted by characterizing the degree of magnetic shielding within the thruster. This characterization was accomplished by placing eight flush-mounted Langmuir probes within each discharge channel wall and measuring the local plasma potential and electron temperature at various axial locations. Measured properties indicate a high degree of magnetic shielding across the throttle table, with plasma potential variations along each channel wall being less than or equal to 5 eV and electron temperatures being maintained at less than or equal to 5 eV, even at 800 V discharge voltage near the thruster exit plane. These properties indicate that ion impact energies within the HERMeS will not exceed 26 eV, which is below the expected sputtering threshold energy for boron nitride. Parametric studies that varied the facility backpressure and magnetic field strength at 300 V, 9.4 kW, illustrate that the plasma potential and electron temperature are insensitive to these parameters, with shielding being maintained at facility pressures 3X higher and magnetic field strengths 2.5X higher than nominal conditions. Overall, the preliminary lifetime assessment indicates a high degree of shielding within the HERMeS TDU1, effectively mitigating discharge channel erosion as a life-limiting mechanism.
Pressure fluctuations in air or other gases in an area of elevated temperature are measured using a condenser microphone located in the area of elevated temperature and electronics for processing changes in the microphone capacitance located outside the area the area and connected to the microphone by means of high-temperature cable assembly. The microphone includes apparatus for decreasing the undesirable change in microphone sensitivity at high temperatures. The high temperature cable assembly operates as a half-wavelength transmission line in an AM carrier system and maintains a large temperature gradient between the two ends of the cable assembly. The processing electronics utilizes a voltage controlled oscillator for automatic tuning thereby increasing the sensitivity of the measuring apparatus.
Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.
The oxidation behavior of a Ni-10(wt%)Cr alloy under high-temperature O 2 conditions is investigated using transmission electron microscopy and first-principles calculations. Results reveal that chromium segregation plays a central role in driving the evolution of complex oxide phase structures during oxidation. At low Cr concentrations, Cr preferentially segregates to NiO grain boundaries or internal pores, substituting for Ni atoms and forming Ni(Cr)O solid solutions. As Cr content increases, enhanced diffusion promotes Cr penetration into the NiO lattice, leading to the formation of multiphase oxide structures. First-principles modeling corroborates these findings: at low Cr concentrations, Cr atoms favor surface and grain-boundary segregation, while higher concentrations lead to Cr aggregation within the NiO bulk. Furthermore, the integrated experimental-theoretical approach provides atomistic insights into Cr-mediated mass transport mechanisms during alloy oxidation and offers valuable guidance for controlling oxide growth kinetics and phase stability in Ni-Cr alloys, with implications for improving oxidation resistance in high-temperature structural applications.
Power-over-Fiber (PoF) technology has been used extensively in settings where high voltages require isolation from ground and electromagnetic isolation is critical. In cryogenic environments, PoF offers a reliable power transmission technology, leveraging optical fibers to transfer power with minimal system degradation. PoF technology excels in maintaining low noise levels and isolation when delivering power to sensitive electronic systems operating in extreme temperature ranges and high voltage environments. Here, in a novel application of PoF for a HEP detector, power is provided to photon detector modules located on a surface at ~300 kV with respect to ground in the planned DUNE experiment. This summary paper of the PoF talk at the 16th PISA Meeting on Advanced Detectors highlights the R&D effort of PoF in extreme conditions and underscores its capacity to revolutionize power delivery and management in critical applications offering a dependable solution with low noise, optimal efficiency, and superior isolation. The DUNE (Abi et al., 2020) experiment will soon deploy large liquid argon (LAr) time projection chambers (TPC) to detect neutrino interactions and other particle physics phenomena. In addition to the particle tracking provided by the TPC, photon detectors, powered by a first ever PoF system, in the cryostat will leverage the high scintillation light yield of LAr to provide crucial timing and additional calorimetric information.
High n-alpha lines (transitions n + 1 to n) with quantum numbers n between 50 and 250 have been observed emanating from galactic H II regions where the electron density and temperature are about 1000/cu cm and 1 eV, respectively. High n-alpha lines have not previously been seen in the laboratory where fairly homogeneous plasmas may be produced and relatively precise measurements of electron densities and temperatures can be made. The present work describes experiments where the first members of the hydrogen line series with lower states n = 10, 11, 12, and 13 have been detected in a laboratory plasma. The width of the 12-alpha line at 88.7 microns could be measured and was consistent with calculated broadening from elastic electron collisions and quasi-static ion effects.
Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS 2 ) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (J D ) of ∼4000 A/cm 2 , an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10 6 . We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. In conclusion, our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.
The Resolve instrument in the recently launched X-ray Imaging and Spectroscopy Mission (XRISM) is a rebuild of the Soft X-ray Spectrometer (SXS) in Hitomi (aka Astro-H which had an unfortunately brief mission life in 2016). It is a high-resolution non-dispersive soft x-ray spectrometer from nominally 0.3 keV to 12 keV based on a calorimeter detector array operating at 50 mK with a resolution better than 7 eV FWHM at 6 keV. For such sensitive cryogenic instruments, temperature stability has a strong impact on the detector’s performance. The Adiabatic Demagnetization Refrigerator Controller (ADRC) in the XRISM Resolve instrument is an electronics box responsible for high-precision sub-K temperature readout and control of the multi-stage adiabatic demagnetization refrigerator subsystem to achieve a thermal stability better than 2.5 uK RMS (over a 10-minute interval) for the calorimeter detectors in both cryogen (liquid helium) and cryo-free modes. It has direct telemetry/command and power interfaces with the spacecraft. It also provides sensor read-out and heater circuits for decontamination of the filters in the cold aperture. As a part of the discussion on the design and performance of the ADRC, this paper will also include an overall view of the 50 mK temperature control, plus monitor and control of the aperture filter temperature for de-contamination purpose.
The Resolve instrument in the recently launched X-ray Imaging and Spectroscopy Mission (XRISM) is a rebuild of the Soft X-ray Spectrometer (SXS) in Hitomi (aka Astro-H which had an unfortunately brief mission life in 2016). It is a high-resolution non-dispersive soft x-ray spectrometer from nominally 0.3 keV to 12 keV based on a calorimeter detector array operating at 50 mK with a resolution better than 7 eV FWHM at 6 keV. For such sensitive cryogenic instruments, temperature stability has a strong impact on the detector’s performance. The Adiabatic Demagnetization Refrigerator Controller (ADRC) in the XRISM Resolve instrument is an electronics box responsible for high-precision sub-K temperature readout and control of the multi-stage adiabatic demagnetization refrigerator subsystem to achieve a thermal stability better than 2.5 uK RMS (over a 10-minute interval) for the calorimeter detectors in both cryogen (liquid helium) and cryo-free modes. It has direct telemetry/command and power interfaces with the spacecraft. It also provides sensor read-out and heater circuits for decontamination of the filters in the cold aperture. As a part of the discussion on the design and performance of the ADRC, this paper will also include an overall view of the 50 mK temperature control, plus monitor and control of the aperture filter temperature for de-contamination purpose.
Intersystem lines of O IV near 1400 A have long been used as electron density diagnostics for solar plasmas at temperatures of around 160,000 K. In addition, however, several allowed lines of O IV near 1340 A should become visible in conditions of high plasma electron number density (greater than 10(exp 12)/cu cm), such as during a solar flare. We present observations of the 1340 A and 1400 A regions of the solar spectrum for two solar flares, obtained by the SO82B spectrograph on board Skylab. We examine three candidate lines for allowed O IV in the flare spectra which occur at the correct wavelengths, but show that two of these are actually blends dominated by resonantly excited molecular lines of H2. The third candidate line, at 1343.51 A, we identify as the O IV allowd line. We present the density and temperature sensitivity of the ratio of allowed and intersystem O IV lines R = I(1343.51 A)/I(1407.39 A). The 1343.51 A line is clearly present in the first solar flare spectrum, and the ratio value implies an electron density of log N(sub e) = 12.6. The second flare has a much weaker 1343.51 A profile, but again the ratio value implies a high electron density. Both these electron density values are in good agreement with estimates for each flare from independent diagnostic ratios. The simple presence alone of a clearly observed O IV 1343.51 A emission line implies an electron density greater than 10(exp 12)/cu cm.
Electron heat fluxes (also called electron thermal fluxes) in the ionosphere are carried by thermal electrons whose energy is below a few eV. Electron heat fluxes greatly impact on electron temperature, which is a fundamental parameter in the ionospheric dynamics. At the high latitude in the auroral regions electron heat flux is originated dominantly from the magnetosphere through high-energy electron energy fluxes. High-energy electron fluxes in the diffuse auroral region can undergo multiple backscatters between the magnetically conjugated regions of both hemispheres, and different kind of wave-particle interactions along the magnetic field line. High-energy electron fluxes in discrete auroral region can be trapped below the auroral acceleration region and can also undergo backscatter and multiple reflection. These processes, in turn, amplify super-thermal electrons (<~500-600 eV) that dominantly form electron heat fluxes through Coulomb collision between thermal electrons. Such electron heat fluxes play an important role to determine electron temperature profile in the ionosphere, which is one of the key parameters that controls the ionospheric dynamics. Thus, it is necessary to include electron heat flux as a topside energy input in all global ionospheric models. We demonstrate all above results based on Superthermal Electron Transport (STET), Superthermal Proton, Electron and Atomic Hydrogen tRansport in the Ionosphere and Thermosphere (SPEAH-RIT), and Comprehensive Inner Magnetosphere and Ionospheres (CIMI) codes developed at NASA Goddard Space Flight Center.
In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.
Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.