Towards radiation hard (Hf, Zr)O2 based Ferroelectric Tunnel Junctions nonvolatile memory
presentation on LDRD work on ferroelectric memory
Henry, Michael David [Sandia National Laboratories↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Near Zero Field Magnetoresistance Investigation of 4H-SiC PiN Junctions Subjected to Energetic Carbon Ion Bombardment
Poster displaying results of Ion Beam Lab testing of non-Sandia test structures.
Burgess, Kaila N. [Pennsylvania State University]↗
Probing Ion Irradiated Junctions and Anisotropy in YBCO with Photoemission Electron Microscopy
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Qu, Rochelle [UC Riverside]↗
EXPERIMENTAL EVALUATION OF THEORETICAL ELASTIC STRESS DISTRIBUTIONS FOR CYLINDER-TO-HEMISPHERE AND CONE-TO-SPHERE JUNCTIONS IN PRESSURIZED SHELL STRUCTURES
Stress state in toriconical structure of constant wall thickness
CYLINDER↗
ANALYSIS OF STRESS AT SEVERAL JUNCTIONS IN PRESSURIZED SHELLS
Presentation of results for the discontinuity stresses in pressure vessels due to changes in geometry or thickness
PRESSURE VESSEL↗
Economical fabrication process produces high quality junction transistors
A convenient, three-step fabrication process, with a p-type layer of gallium arsenide vapor deposited on a starting wafer of germanium, is used to produce heterojunction-homojunction p-n-p transistors. These are of high quality with good injection efficiency and low capacitance.
Source record↗
Photovoltaic junctions on polycrystalline cdte
Thin, polycrystalline, cadmium telluride solar cells
CADMIUM TELLURIDE↗
Radiation Effects of Protons and Electrons in Silicon Diffused-Junction Detectors
Diffused n-on-p silicon particle detectors were irradiated with 1-Mev electrons, and with 31-Mev and 8.2-Mev protons. The detector capacitance was observed to increase with electron irradiation and to decrease with proton irradiation. A physical interpretation is given in terms of defect energy levels known to be introduced in silicon by irradiation. Defect ionization states are taken to be characteristic of the space-charge region, rather than of bulk silicon. The relation to other studies of damage in semiconductor particle detectors is pointed out, considering differences in the types of detector and irradiation used. The significance of these results is discussed for detector applications where the damage threshold is exceeded.
Scott, R. E.↗
Research investigations of bulkhead cylindri- cal junctions exposed to combined load, cryogenic temperature. part iii- theoretical analysis of the thermal loads
Thermal stress in thin walled shell joint of missile intertank
THERMAL STRESS↗
Research investigations of bulkhead cylindri- cal junctions exposed to combined load, cryo- genic temperature. part iv- theoretical analysis of the buckling problem
Compression buckling of shell of revolution under axial compression - shell stability
AXIAL COMPRESSION↗
A study of thin film vacuum deposited junctions semiannual status report, 5 dec. 1964 - 5 jun. 1965
Effects of surface states and grain boundaries on free carrier concentration, mobility, and free path of charge carriers in thin films - Design and fabrication of thin film electronic devices
THIN FILM↗
A study of thin film vacuum deposited junctions Annual status report, Dec. 5, 1964 - Dec. 5, 1965
Thin film vacuum deposition semiconductors, electron tunneling devices, and field effect transistors
VACUUM DEPOSITION↗
Research Investigations of Bulkhead Cylindrical Junctions Exposed to Combined Load, Cryogenic Temperatures and Pressure. Part I - Experimental Studies
Two-dimensional analog model and 1/6 reduced scale model to study bending stress concentrations, strains, and displacements in Y-ring of Saturn V S-IV liquid oxygen container
SCALE MODEL↗
Stress state in the junction region of a right-angled branch pipe
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Riedelbach, W.↗
Pressure-sensitive bonded junction transducers
Miniature transducers involve the use of appropriate commercial epoxy resins. Design protects the sensitive semiconductor surface from ambients and excludes an air space in the device capsule.
Iannini, A.↗
A miniature piezo-junction pressure transducer.
Miniature piezojunction pressure transducer incorporating GaSb and GaAs tunnel diodes
Garfein, A.↗
Restricted-flow junction between liquids
Allowing a liquid to seep through a long crack in glass provides means for restricting its flow for long periods without attention. The length of the crack prevents the plugging to which capillaries are susceptible.
Vango, S. P.↗
The presence of deep levels in ion implanted junctions.
Deep trapping levels caused by ion implantation doping, discussing level effects on electrical characteristics of zinc implanted GaAs diodes
Hunsperger, R. G.↗